GB2499816A - Controlling deposition and etching in a chamber with fine time control of parameters and gas flow - Google Patents

Controlling deposition and etching in a chamber with fine time control of parameters and gas flow Download PDF

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Publication number
GB2499816A
GB2499816A GB1203530.9A GB201203530A GB2499816A GB 2499816 A GB2499816 A GB 2499816A GB 201203530 A GB201203530 A GB 201203530A GB 2499816 A GB2499816 A GB 2499816A
Authority
GB
United Kingdom
Prior art keywords
etching
substrate
devices
control steps
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB1203530.9A
Other languages
English (en)
Other versions
GB201203530D0 (en
Inventor
Mark Edward Mcnie
Michael Joseph Cooke
Leslie Michael Lea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford Instruments Nanotechnology Tools Ltd
Original Assignee
Oxford Instruments Nanotechnology Tools Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Instruments Nanotechnology Tools Ltd filed Critical Oxford Instruments Nanotechnology Tools Ltd
Priority to GB1203530.9A priority Critical patent/GB2499816A/en
Publication of GB201203530D0 publication Critical patent/GB201203530D0/en
Priority to JP2014559290A priority patent/JP6217654B2/ja
Priority to PCT/GB2013/050481 priority patent/WO2013128181A1/en
Priority to EP13709983.4A priority patent/EP2820670B1/en
Priority to EP17172932.0A priority patent/EP3229265B1/en
Priority to KR1020147027495A priority patent/KR102181719B1/ko
Priority to TW102106858A priority patent/TWI608533B/zh
Priority to US14/381,508 priority patent/US9412566B2/en
Publication of GB2499816A publication Critical patent/GB2499816A/en
Withdrawn legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Program-control systems
    • G05B19/02—Program-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/34—Director, elements to supervisory
    • G05B2219/34198—Electric and fluidic modules integrated on one substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Quality & Reliability (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
GB1203530.9A 2012-02-29 2012-02-29 Controlling deposition and etching in a chamber with fine time control of parameters and gas flow Withdrawn GB2499816A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GB1203530.9A GB2499816A (en) 2012-02-29 2012-02-29 Controlling deposition and etching in a chamber with fine time control of parameters and gas flow
JP2014559290A JP6217654B2 (ja) 2012-02-29 2013-02-27 基板に物質を堆積及び／又は基板から物質をエッチング除去する方法及び装置
PCT/GB2013/050481 WO2013128181A1 (en) 2012-02-29 2013-02-27 Methods and apparatus for depositing and/or etching material on a substrate
EP13709983.4A EP2820670B1 (en) 2012-02-29 2013-02-27 A method for depositing and/or etching material on a substrate
EP17172932.0A EP3229265B1 (en) 2012-02-29 2013-02-27 Methods and apparatus for depositing and/or etching material on a substrate
KR1020147027495A KR102181719B1 (ko) 2012-02-29 2013-02-27 기판 상에 재료 증착 및/또는 에칭하는 방법 및 장치
TW102106858A TWI608533B (zh) 2012-02-29 2013-02-27 用來於基板上沈積及／或蝕刻材料之方法及裝置
US14/381,508 US9412566B2 (en) 2012-02-29 2013-02-27 Methods and apparatus for depositing and/or etching material on a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1203530.9A GB2499816A (en) 2012-02-29 2012-02-29 Controlling deposition and etching in a chamber with fine time control of parameters and gas flow

Publications (2)

Publication Number Publication Date
GB201203530D0 GB201203530D0 (en) 2012-04-11
GB2499816A true GB2499816A (en) 2013-09-04

Family

ID=45991923

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1203530.9A Withdrawn GB2499816A (en) 2012-02-29 2012-02-29 Controlling deposition and etching in a chamber with fine time control of parameters and gas flow

Country Status (7)

Country Link
US (1) US9412566B2 (enExample)
EP (2) EP2820670B1 (enExample)
JP (1) JP6217654B2 (enExample)
KR (1) KR102181719B1 (enExample)
GB (1) GB2499816A (enExample)
TW (1) TWI608533B (enExample)
WO (1) WO2013128181A1 (enExample)

Cited By (3)

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EP2887386A3 (en) * 2013-12-23 2015-07-01 SPTS Technologies Limited Method of etching
US10872775B2 (en) 2017-06-05 2020-12-22 Spts Technologies Limited Methods of plasma etching and plasma dicing
US20230359168A1 (en) * 2022-05-03 2023-11-09 Nanya Technology Corporation Method for controlling deposition tool

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KR20160012302A (ko) * 2014-07-23 2016-02-03 삼성전자주식회사 기판 제조 방법 및 그에 사용되는 기판 제조 장치
CN105374737B (zh) * 2014-08-25 2019-02-26 中微半导体设备(上海)有限公司 抑制刻蚀过程中孔底部出现缺口的方法、孔的形成方法
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US10020264B2 (en) * 2015-04-28 2018-07-10 Infineon Technologies Ag Integrated circuit substrate and method for manufacturing the same
JP6533998B2 (ja) * 2015-05-13 2019-06-26 国立研究開発法人産業技術総合研究所 ドライエッチング方法
TWI676357B (zh) * 2015-06-05 2019-11-01 美商蘭姆研究公司 配方組之執行同步系統與方法
US20160372306A1 (en) * 2015-06-18 2016-12-22 Tokyo Electron Limited Method for Controlling Plasma Uniformity in Plasma Processing Systems
US9978606B2 (en) * 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
US9595451B1 (en) * 2015-10-19 2017-03-14 Applied Materials, Inc. Highly selective etching methods for etching dielectric materials
JP2017079273A (ja) * 2015-10-21 2017-04-27 パナソニックＩｐマネジメント株式会社 プラズマ処理方法
US9824896B2 (en) * 2015-11-04 2017-11-21 Lam Research Corporation Methods and systems for advanced ion control for etching processes
WO2017150628A1 (ja) * 2016-03-02 2017-09-08 国立研究開発法人産業技術総合研究所 微細立体構造形成方法、及び微細立体構造
US9865484B1 (en) * 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US20180061696A1 (en) * 2016-08-23 2018-03-01 Applied Materials, Inc. Edge ring or process kit for semiconductor process module
US9997364B2 (en) * 2016-10-19 2018-06-12 Lam Research Corporation High aspect ratio etch
JP6807558B2 (ja) * 2016-11-08 2021-01-06 パナソニックＩｐマネジメント株式会社 プラズマ処理方法およびプラズマ処理装置
US11664206B2 (en) * 2017-11-08 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Arcing protection method and processing tool
US10529578B2 (en) * 2017-11-12 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating semiconductor structure
DE102018010532B4 (de) 2017-11-12 2024-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur Herstellung einer Halbleiterstruktur
GB201811873D0 (en) 2018-07-20 2018-09-05 Oxford Instruments Nanotechnology Tools Ltd Semiconductor etching methods
CN109218945A (zh) * 2018-08-07 2019-01-15 瑞声科技(新加坡)有限公司 Mems结构的制造方法、mems结构及硅麦克风
KR102829107B1 (ko) 2019-05-02 2025-07-07 삼성전자주식회사 Euv 노광 장치 및 그를 이용한 반도체 소자의 제조 방법
US20210210355A1 (en) * 2020-01-08 2021-07-08 Tokyo Electron Limited Methods of Plasma Processing Using a Pulsed Electron Beam
DE102020216518B4 (de) * 2020-12-22 2023-08-17 Carl Zeiss Smt Gmbh Endpunktbestimmung mittels Kontrastgas
CN113097062B (zh) * 2021-03-22 2024-06-21 北京北方华创微电子装备有限公司 刻蚀工艺方法及装置
WO2022210043A1 (ja) * 2021-03-30 2022-10-06 東京エレクトロン株式会社 エッチング方法及びエッチング装置
GB2626184A (en) 2023-01-13 2024-07-17 Oxford Instruments Nanotechnology Tools Ltd Methods of manufacturing superconducting via through semiconductor wafer
US20250378138A1 (en) * 2024-06-11 2025-12-11 Applied Materials, Inc. System and method for chamber matching using phase-based scoring
WO2026078383A1 (en) 2024-10-09 2026-04-16 Oxford Instruments Nanotechnology Tools Limited Methods of manufacture and surface treatment of semiconductor structures
CN122581017A (zh) * 2024-12-13 2026-08-14 株式会社日立高新技术 等离子体处理方法

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