JP2015507702A - 側方排気方式基板処理装置 - Google Patents
側方排気方式基板処理装置 Download PDFInfo
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- JP2015507702A JP2015507702A JP2014551179A JP2014551179A JP2015507702A JP 2015507702 A JP2015507702 A JP 2015507702A JP 2014551179 A JP2014551179 A JP 2014551179A JP 2014551179 A JP2014551179 A JP 2014551179A JP 2015507702 A JP2015507702 A JP 2015507702A
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- Prior art keywords
- processing apparatus
- port
- substrate processing
- inner exhaust
- chamber body
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (14)
- 上部が開放されて基板に対する処理が行われる内部空間が設けられたチャンバ本体と,
前記チャンバ本体の上部に設置されて前記チャンバ本体の上部を閉鎖するチャンバリッドと,
前記チャンバリッドの下部に設置されて前記内部空間に向かってプロセスガスを供給するシャワーヘッドと,を含み,
前記チャンバ本体は,
側壁に沿って内部に形成されて前記内部空間内のガスを収斂する一つ以上の収斂ポートと,
側壁に形成され,前記収斂ポートと前記内部空間を連通する複数の内側排気孔と,
前記収斂ポートにそれぞれ連結される複数の内側排気ポートと,を有することを特徴とする基板処理装置。 - 前記基板処理装置は,前記基板が上部に装填されて昇降によって基板が装填される装填位置及び前記基板に対する前記処理が行われる処理位置に移動可能なサセプタを更に含み,前記内側排気孔は前記処理位置に配置された前記サセプタの上部と前記シャワーヘッドとの間に位置することを特徴とする請求項1記載の基板処理装置。
- 前記チャンバ本体は側壁に形成されて前記基板が前記内部空間に出入する通路を有し,
前記収斂ポート及び前記内側排気孔は前記通路の上部に位置することを特徴とする請求項1記載の基板処理装置。 - 前記内側排気孔の直径は前記内側排気ポートから離隔された距離に応じてそれぞれ異なることを特徴とする請求項1記載の基板処理装置。
- 前記内側排気孔の直径は前記内側排気ポートから離隔された距離に比例することを特徴とする請求項1記載の基板処理装置。
- 前記基板処理装置は前記収斂ポートの上に設置され,複数の分配孔を有する分配リングを更に含むことを特徴とする請求項1記載の基板処理装置。
- 前記分配孔の直径は前記内側排気ポートから離隔された距離に応じてそれぞれ異なることを特徴とする請求項6記載の基板処理装置。
- 前記分配孔の直径は前記内側排気ポートから離隔された距離に比例することを特徴とする請求項6記載の基板処理装置。
- 前記分配孔は前記内側排気孔の間にそれぞれ配置されることを特徴とする請求項6記載の基板処理装置。
- 前記収斂ポートはリング状であることを特徴とする請求項1記載の基板処理装置。
- 前記収斂ポートは前記チャンバ本体の上部面から陥没して形成されることを特徴とする請求項1記載の基板処理装置。
- 前記基板処理装置は前記収斂ポートの開放された上部を閉鎖するポートカバーを更に有することを特徴とする請求項11記載の基板処理装置。
- 前記基板処理装置は,
前記チャンバ本体の外側を介して前記内側排気ポートにそれぞれ連結される複数の外側排気ポートと,
前記外側排気ポートに連結されるメインポートと,を更に含むことを特徴とする請求項1記載の基板処理装置。 - 前記基板処理装置は,
前記外側排気ポートにそれぞれ設置されて前記外側排気ポートを介して排出される前記ガスの流量を調節する流量調節バルブと,
前記流量調節バルブにそれぞれ連結され,前記流量調節バルブを制御して前記ガスの排出量を同じく調節する制御器と,を更に含むことを特徴とする請求項13記載の基板処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0011175 | 2012-02-03 | ||
KR1020120011175A KR101356664B1 (ko) | 2012-02-03 | 2012-02-03 | 측방배기 방식 기판처리장치 |
PCT/KR2012/009953 WO2013115471A1 (ko) | 2012-02-03 | 2012-11-23 | 측방배기 방식 기판처리장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015507702A true JP2015507702A (ja) | 2015-03-12 |
JP6014683B2 JP6014683B2 (ja) | 2016-10-25 |
Family
ID=48905474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014551179A Active JP6014683B2 (ja) | 2012-02-03 | 2012-11-23 | 側方排気方式基板処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20140331933A1 (ja) |
JP (1) | JP6014683B2 (ja) |
KR (1) | KR101356664B1 (ja) |
CN (1) | CN104105813B (ja) |
TW (1) | TWI496942B (ja) |
WO (1) | WO2013115471A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023182031A1 (ja) * | 2022-03-24 | 2023-09-28 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101645545B1 (ko) * | 2014-01-29 | 2016-08-05 | 세메스 주식회사 | 기판처리장치 |
KR102035238B1 (ko) * | 2014-02-20 | 2019-10-22 | 주식회사 원익아이피에스 | 기판 처리 장치 |
US9963782B2 (en) * | 2015-02-12 | 2018-05-08 | Asm Ip Holding B.V. | Semiconductor manufacturing apparatus |
WO2024076480A1 (en) * | 2022-10-06 | 2024-04-11 | Lam Research Corporation | Annular pumping for chamber |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017477A (ja) * | 2001-06-22 | 2003-01-17 | Applied Materials Inc | 半導体製造装置のプロセスチャンバ構造および半導体製造装置 |
JP2003318158A (ja) * | 2002-04-19 | 2003-11-07 | Nordson Corp | プラズマ処理システム |
JP2010016021A (ja) * | 2008-07-01 | 2010-01-21 | Tokyo Electron Ltd | プラズマ処理装置 |
JPWO2009118837A1 (ja) * | 2008-03-26 | 2011-07-21 | 東京エレクトロン株式会社 | 処理チャンバの排気ガス流量の制御方法及び処理装置 |
Family Cites Families (11)
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JPH1027761A (ja) * | 1996-07-09 | 1998-01-27 | Sony Corp | 化学反応装置 |
KR100243520B1 (ko) * | 1997-07-23 | 2000-03-02 | 서성기 | 박막증착장치 |
JP4422295B2 (ja) * | 2000-05-17 | 2010-02-24 | キヤノンアネルバ株式会社 | Cvd装置 |
JP2002299240A (ja) * | 2001-03-28 | 2002-10-11 | Tadahiro Omi | プラズマ処理装置 |
US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
KR20060093611A (ko) * | 2005-02-22 | 2006-08-25 | 삼성전자주식회사 | 화학기상증착설비와 잔류가스 배기방법 |
JP2008192642A (ja) * | 2007-01-31 | 2008-08-21 | Tokyo Electron Ltd | 基板処理装置 |
WO2009017322A1 (en) * | 2007-07-30 | 2009-02-05 | Ips Ltd. | Reactor for depositing thin film on wafer |
JP5192214B2 (ja) * | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | ガス供給装置、基板処理装置および基板処理方法 |
KR101452834B1 (ko) * | 2008-12-29 | 2014-10-21 | 주식회사 케이씨텍 | 원자층 증착장치 |
JP5323628B2 (ja) * | 2009-09-17 | 2013-10-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2012
- 2012-02-03 KR KR1020120011175A patent/KR101356664B1/ko active IP Right Grant
- 2012-11-23 US US14/370,040 patent/US20140331933A1/en not_active Abandoned
- 2012-11-23 WO PCT/KR2012/009953 patent/WO2013115471A1/ko active Application Filing
- 2012-11-23 CN CN201280068840.0A patent/CN104105813B/zh active Active
- 2012-11-23 JP JP2014551179A patent/JP6014683B2/ja active Active
- 2012-12-13 TW TW101147103A patent/TWI496942B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017477A (ja) * | 2001-06-22 | 2003-01-17 | Applied Materials Inc | 半導体製造装置のプロセスチャンバ構造および半導体製造装置 |
JP2003318158A (ja) * | 2002-04-19 | 2003-11-07 | Nordson Corp | プラズマ処理システム |
JPWO2009118837A1 (ja) * | 2008-03-26 | 2011-07-21 | 東京エレクトロン株式会社 | 処理チャンバの排気ガス流量の制御方法及び処理装置 |
JP2010016021A (ja) * | 2008-07-01 | 2010-01-21 | Tokyo Electron Ltd | プラズマ処理装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023182031A1 (ja) * | 2022-03-24 | 2023-09-28 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6014683B2 (ja) | 2016-10-25 |
CN104105813B (zh) | 2016-10-12 |
KR20130090101A (ko) | 2013-08-13 |
CN104105813A (zh) | 2014-10-15 |
KR101356664B1 (ko) | 2014-02-05 |
US20140331933A1 (en) | 2014-11-13 |
WO2013115471A1 (ko) | 2013-08-08 |
TWI496942B (zh) | 2015-08-21 |
TW201333256A (zh) | 2013-08-16 |
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