US20170110292A1 - Tunable gas delivery assembly with internal diffuser and angular injection - Google Patents
Tunable gas delivery assembly with internal diffuser and angular injection Download PDFInfo
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- US20170110292A1 US20170110292A1 US15/393,828 US201615393828A US2017110292A1 US 20170110292 A1 US20170110292 A1 US 20170110292A1 US 201615393828 A US201615393828 A US 201615393828A US 2017110292 A1 US2017110292 A1 US 2017110292A1
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- Prior art keywords
- nozzle
- trench
- gas delivery
- delivery assembly
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/004—Nozzle assemblies; Air knives; Air distributors; Blow boxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Definitions
- Embodiments of the present invention generally relate to a substrate processing system. More particularly, embodiments of the present invention relate to an apparatus for providing processing gases to a process chamber with improved uniformity.
- inductively coupled plasma reactors are used in various processes.
- Conventional inductively coupled plasma reactors generally include a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying one or more processing gases into the chamber, and one or more coil antennas overlying the ceiling.
- a gas inlet generally includes one or more gas lines coupled to a gas delivery assembly with a plurality of outlets.
- the gas delivery assembly generally includes a hub, a nozzle, and outlets disposed in the side wall of the nozzle.
- a vacuum pump disposed in the vacuum chamber to maintain the vacuum environment inside the chamber. It has been observed that in certain applications or chamber designs, there is a skew in the distribution of processing gas.
- Embodiments of the present invention relate to an apparatus for providing processing gases to a process chamber with improved uniformity.
- One embodiment of the present invention provides a gas delivery assembly.
- the gas delivery assembly includes a nozzle and one or more gas diffusers disposed in the nozzle.
- the nozzle has a cylindrical body with a side wall and a top surface.
- a plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wall.
- the injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.
- a gas delivery assembly in one embodiment, includes a nozzle having a cylindrical body with a side wall and a top surface, a first trench disposed in the top surface, and a first diffuser disposed in the first trench. A first plenum is formed between the first diffuser and a bottom of the first trench.
- the gas delivery assembly further includes a plurality of outer injection passages formed within the nozzle. Each of the outer injection passages extends from the bottom of the first trench to a first location inside the nozzle that is a first distance away from the top surface.
- the gas delivery assembly further includes a connecting passage connecting each of the outer injection passages to a first outlet disposed in the side wall of the nozzle. The connecting passage is substantially parallel to a bottom of the nozzle and is not radially aligned with a centerline of the nozzle.
- a substrate processing system in another embodiment, includes a chamber body defining a processing volume and a chamber lid having a central opening.
- the substrate processing system further includes a substrate support disposed in the processing volume and a gas delivery assembly having a hub and a nozzle disposed over the chamber lid. A portion of the nozzle is positioned in the processing volume through the central opening in the chamber lid.
- the nozzle includes a cylindrical body having a side wall, a top surface having one or more trenches, and a gas diffuser disposed inside each trench.
- FIG. 1 schematically illustrates a sectional view of a plasma processing system according to one embodiment of the invention.
- FIG. 2 is an enlarged sectional view of a gas delivery assembly according to one embodiment of the invention.
- FIG. 3A is an isometric view of a nozzle according to one embodiment of the invention.
- FIG. 3B is a partial sectional view of the nozzle of FIG. 3A .
- FIG. 3C is a top view of the nozzle of FIG. 3A .
- FIG. 3D is a sectional view of the nozzle of FIG. 3A taken through section line 3 C depicted in FIG. 2 .
- Embodiments of the present invention generally relate to an apparatus for providing processing gases to a process chamber with improved uniformity. More particularly, embodiments of the present invention provide a gas delivery assembly including a hub for receiving one or more gases from a source, a nozzle for injecting the one or more gases to a process chamber through a plurality of injection passages and one or more gas diffusers disposed in a top surface of the nozzle. The gas diffusers create a small pressure head when the nozzle is coupled to the hub, thus the processing gases received from a single source can have uniform flow through multiple injection points.
- FIG. 1 schematically illustrates a sectional view of a substrate processing system 100 , for processing a variety of substrates and accommodating a variety of substrate sizes, for example, a substrate diameter of up to about 300 mm or 450 mm.
- the substrate processing system 100 includes a chamber body 102 having a processing volume 104 defined therein.
- the chamber housing assembly 102 may include sidewalls 106 and a chamber lid 108 .
- a substrate support assembly 110 may be disposed in the processing volume 104 .
- the substrate support assembly 110 supports a substrate 112 during processing.
- a slit valve opening 144 may be formed in the chamber wall 106 to allow a robot (not shown) to move substrates in and out of the processing volume 104 .
- a slit valve door 148 may be used to selectively close the slit valve opening 144 .
- a plurality of lift pins 146 may be selectively extended from the substrate support assembly 110 to facilitate substrate transfer between the robot and the substrate support assembly 110 .
- the substrate support assembly 110 may include an electrostatic chuck 113 for securing the substrate 112 thereon during processing.
- the chamber lid 108 has an opening 116 to allow entrance of one or more processing gases.
- the opening 116 may be a central opening located near a centerline 118 of the substrate processing system 100 and correspond to a center of the substrate 112 being processed.
- a gas delivery assembly 120 is disposed over the chamber lid 108 through the opening 116 .
- the gas delivery assembly 120 may be connected to a gas source 124 through one or more gas input lines 122 to supply one or more processing gases to the processing volume 104 .
- the one or more processing gases may exit the processing volume 104 via a pumping channel 138 formed in a liner 140 disposed inside the processing volume 104 .
- the pumping channel 138 may be in fluid communication with a vacuum pump 142 .
- the vacuum pump 142 may be connected to the processing volume 104 directly.
- a sensor 126 may be disposed over the chamber lid 108 and configured to monitor the substrate 112 in the processing volume 104 through the gas delivery assembly 120 .
- the sensor 126 may be connected to a system controller 128 to provide feedback for process control.
- the system controller 128 comprises a central processing unit (CPU) (not shown), a memory (not shown), and support circuits (not shown) for the CPU and facilitates control of the components of the process chamber 100 .
- the system controller 128 may be one of any form of general-purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors.
- the memory of the CPU may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote.
- the support circuits are coupled to the CPU for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like.
- the inventive method is generally stored in the memory or other computer-readable medium accessible to the CPU as a software routine. Alternatively, such software routine may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU.
- the substrate processing system 100 may include an antenna assembly 130 disposed over the chamber lid 108 .
- the antenna assembly 130 is configured to generate plasma in the processing volume 104 .
- the antenna assembly 130 may include one or more solenoidal interleaved coil antennas disposed coaxial with the centerline 118 of the substrate processing system 100 .
- a heater assembly 132 may be disposed over the chamber lid 108 .
- the heater assembly 132 may be secured to the chamber lid 108 by clamping members 134 , 136 .
- the gas delivery assembly 120 is configured to supply one or more processing gases to the processing volume 104 in a uniform manner.
- FIG. 2 is an enlarged sectional view of the gas delivery assembly 120 disposed on the chamber lid 108 with the clamping members 134 , 136 and the heater assembly 132 removed.
- the centerline 118 of the processing system 100 is also the centerline of the gas delivery assembly 120 .
- the gas delivery assembly 120 includes a hub 210 , a nozzle 230 and one or more gas diffusers 250 disposed in the nozzle 230 .
- the nozzle 230 When assembled, the nozzle 230 is disposed through the opening 116 of the chamber lid 108 .
- the nozzle 230 may have a flange 232 for mounting the nozzle 230 on the chamber lid 108 .
- a portion of the nozzle 230 protrudes into the processing volume 104 through the opening 116 to deliver processing gas to the processing volume 104 .
- the hub 210 is positioned on the chamber lid 108 covering the opening 116 and the nozzle 230 .
- the hub 210 is disposed over the nozzle 230 and provides an interface between the gas input lines 122 and the nozzle 230 .
- the hub 210 has a body shaped to enclose the opening 116 and interface with the nozzle 230 .
- the body has an outer surface facing the exterior environment and a bottom surface 213 for contacting with the nozzle 230 and the chamber lid 108 .
- the body is substantially circular and concentric with the centerline 118 .
- the body has an outer channel 206 and an inner channel 208 .
- both inner and outer channels 208 , 206 are circular and the outer channel 206 is arranged radially outward of the inner channel 208 .
- the outer channel 206 and the inner channel 208 have different heights in the body.
- One or more inlet passages 212 a, 212 b are formed through the body and connected to the outer channel 206 and the inner channel 208 . Because the outer and inner channels 206 , 208 have different heights, the inlet passage 212 b connected to the inner circular channel 208 does not disrupt, e.g., is isolated from, the outer channel 206 .
- the one or more inlet passages 212 a, 212 b are adapted to connect with the one or more gas input lines 122 . In one embodiment, the one or more inlet passages 212 a , 212 b are non-symmetrical relative to the centerline 118 .
- the top surface 231 of the nozzle 230 has one or more trenches 260 and the gas diffusers 250 are disposed inside at least one of the trenches 260 (detail described below).
- a gland 226 may be formed in the bottom surface 213 of the hub 210 to receive a seal 276 . When assembled, the glands 226 and the seals 276 surround the opening 116 of the chamber lid 108 and the seal 276 contacts the chamber lid 108 to form an air tight seal between the processing volume 104 and the exterior environment.
- Another gland 278 may be formed between the inner channel 208 and the outer channel 206 to receive a seal 280 to form an air tight seal between the two channels.
- the gas injection assembly 120 includes an observation window 270 .
- the body of the hub 210 may have a through hole 222 and the nozzle 230 may be a hollow cylinder having a central opening 240 .
- the observation window 270 may be disposed between the hub 210 and the nozzle 230 .
- the nozzle 230 may have a recess 242 for supporting the observation window 270 .
- the hub 210 may have a gland 272 formed to receive a seal 274 to provide a vacuum seal between the hub 210 and the observation window 270 .
- the observation window 270 is fabricated from quartz.
- the nozzle 230 has a cylindrical body with a side wall 228 and a top surface 231 for contacting with the bottom surface 213 of the hub 210 .
- the nozzle 230 has a plurality of inner injection passages 238 and a plurality of outer injection passages 236 for injecting one or more processing gases from the outer and inner channels 206 , 208 of the hub 210 to the processing volume 104 .
- the outer injection passages 236 are arranged radially outward of the inner injection passages 238 .
- the outer and inner injection passages 236 , 238 may have outlets at various positions to achieve gas injection. In one embodiment, as shown in FIG.
- the outer injection passages 236 have outlets 306 disposed in the side wall 228 and are connected to the outlets 306 by connecting passages 330 .
- the inner injection passages 238 have outlets 350 disposed in a bottom surface 235 of the nozzle 230 and directed downward from the nozzle 230 .
- the outer and inner injection passages 236 , 238 are evenly distributed in azimuthal orientation (e.g., in an evenly distributed polar array).
- FIGS. 3A-3D illustrate the nozzle 230 according to various embodiments of the invention.
- FIG. 3A is an isometric view of the nozzle 230
- FIG. 3B is a partial sectional view of the nozzle 230 .
- the top surface 231 of the nozzle 230 has an outer trench 302 and an inner trench 304 .
- the outer and inner trenches 302 , 304 are circular and concentric with the centerline 118 .
- the plurality of outlets 306 of the outer injection passages 236 are disposed in the side wall 228 . In one embodiment, the outlets 306 are disposed evenly along the circumference of the side wall 228 .
- the gas diffusers 250 a, 250 b are disposed inside the outer and inner trenches 302 , 304 , respectively.
- the gas diffusers 250 a, 250 b are spaced from bottoms 352 , 354 of the outer and inner trenches 302 , 304 , thus, creating plenums 356 , 358 between the gas diffusers 250 a, 250 b and bottoms 352 , 354 of the outer and inner trenches 302 , 304 so that the processing gases may be evenly distributed into the injection passages 236 , 238 .
- the gas diffusers 250 a, 250 b may be any suitable gas permeable material or structure. In one embodiment, as shown in FIG.
- the gas diffusers 250 a , 250 b have a plurality of holes 308 .
- the gas diffusers 250 a, 250 b may be made of alumina or the same material as the nozzle 230 .
- the nozzle 230 and the gas diffusers 250 a, 250 b are made of ceramic material.
- the outer injection passage 236 extends from the bottom 352 of the outer trench 302 to a location within the nozzle 230 that is a distance away from the top surface 231 .
- the inner injection passage 238 extends from the bottom 354 of the inner trench 304 to a location within the nozzle 230 that is a distance away from the top surface 231 . In one embodiment, the inner injection passage 238 extends further into the nozzle 230 than the outer injection passage 236 .
- FIG. 3C is a top view of the nozzle 230 , in which the gas diffusers 250 a, 250 b are transparent for better illustration.
- the nozzle 230 has the plurality of outer injection passages 236 and the plurality of inner injection passages 238 disposed therein.
- the outer injection passages 236 are arranged radially outward of the inner injection passages 238 .
- the outer injection passages 236 have inlets 320 disposed at the bottom of the outer trench 302
- the inner injection passages 236 have inlets 310 disposed at the bottom of the inner trench 304 .
- the inlets 310 , 320 may be disposed evenly inside the inner and outer trenches 304 , 302 .
- the area of one of the plurality of holes 308 of the gas diffusers 250 a, 250 b may be smaller than the surface area of one of the inlets 310 , 320 .
- the total area of the holes 308 of the diffuser 250 a equals the total surface area of the inlets 320
- the total area of the holes 308 of the diffuser 250 b equals the total surface area of the inlets 310 .
- the gas diffusers 250 a , 250 b create a small pressure head when the nozzle 230 is coupled to the hub 210 , thus the processing gases received from a single gas source 124 can have uniform flow through multiple injection points.
- FIG. 3D is a sectional view of the nozzle 230 without the gas diffusers 250 .
- the outer injection passages 236 extends from the bottom of the outer trench 302 to a distance inside the nozzle 230 from the top surface 231 , and the outlets 306 of the outer injection passages 236 are disposed in the side wall 228 .
- each outlet 306 and the corresponding outer injection passage 236 are connected by a connecting passage 330 .
- the connecting passage 330 is not perpendicular to a tangent 340 of the side wall 228 at the outlet 306 (e.g., the angle “A” in FIG. 3D does not equal to 90 degrees).
- the connecting passages 330 are not radially aligned with the centerline 118 of the chamber body 102 , which is also the centerline of the hub 210 , nozzle 230 , and gas diffusers 250 a, 250 b.
- the angle “A” ranges from about 15 degrees to about 60 degrees.
- the processing gases exiting the outlet 306 are directed in the same direction defined by the connecting passage 330 . If the angle “A” is 90 degrees, then the processing gases coming out of the outlet that is facing the vacuum pump 142 may travel at a faster speed compare to the processing gases coming out of all other outlets. By changing the angle “A” to an angle other than 90 degrees, the processing gases are coming out of each outlet at substantially the same speed, thus creating a more uniform gas flow inside the process chamber.
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Abstract
Description
- This application is a divisional application of co-pending U.S. patent application Ser. No. 13/959,801, filed on Aug. 6, 2013, (which is related to U.S. patent application Ser. No. 13/790,735, filed Mar. 8, 2013) which claims benefit of U.S. Provisional Patent Application Ser. No. 61/768,901, filed on Feb. 25, 2013. Each of aforementioned patent applications are incorporated herein by reference.
- Field
- Embodiments of the present invention generally relate to a substrate processing system. More particularly, embodiments of the present invention relate to an apparatus for providing processing gases to a process chamber with improved uniformity.
- Description of the Related Art
- During manufacturing of microelectronic devices, inductively coupled plasma reactors are used in various processes. Conventional inductively coupled plasma reactors generally include a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying one or more processing gases into the chamber, and one or more coil antennas overlying the ceiling. A gas inlet generally includes one or more gas lines coupled to a gas delivery assembly with a plurality of outlets.
- The gas delivery assembly generally includes a hub, a nozzle, and outlets disposed in the side wall of the nozzle. Typically there is a vacuum pump disposed in the vacuum chamber to maintain the vacuum environment inside the chamber. It has been observed that in certain applications or chamber designs, there is a skew in the distribution of processing gas.
- Therefore, there is a need for an improved apparatus for delivering processing gas with improved uniformity.
- Embodiments of the present invention relate to an apparatus for providing processing gases to a process chamber with improved uniformity. One embodiment of the present invention provides a gas delivery assembly. The gas delivery assembly includes a nozzle and one or more gas diffusers disposed in the nozzle. The nozzle has a cylindrical body with a side wall and a top surface. A plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wall. The injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.
- In one embodiment, a gas delivery assembly is disclosed. The gas delivery assembly includes a nozzle having a cylindrical body with a side wall and a top surface, a first trench disposed in the top surface, and a first diffuser disposed in the first trench. A first plenum is formed between the first diffuser and a bottom of the first trench. The gas delivery assembly further includes a plurality of outer injection passages formed within the nozzle. Each of the outer injection passages extends from the bottom of the first trench to a first location inside the nozzle that is a first distance away from the top surface. The gas delivery assembly further includes a connecting passage connecting each of the outer injection passages to a first outlet disposed in the side wall of the nozzle. The connecting passage is substantially parallel to a bottom of the nozzle and is not radially aligned with a centerline of the nozzle.
- In another embodiment, a substrate processing system is disclosed. The substrate processing system includes a chamber body defining a processing volume and a chamber lid having a central opening. The substrate processing system further includes a substrate support disposed in the processing volume and a gas delivery assembly having a hub and a nozzle disposed over the chamber lid. A portion of the nozzle is positioned in the processing volume through the central opening in the chamber lid. The nozzle includes a cylindrical body having a side wall, a top surface having one or more trenches, and a gas diffuser disposed inside each trench.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
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FIG. 1 schematically illustrates a sectional view of a plasma processing system according to one embodiment of the invention. -
FIG. 2 is an enlarged sectional view of a gas delivery assembly according to one embodiment of the invention. -
FIG. 3A is an isometric view of a nozzle according to one embodiment of the invention. -
FIG. 3B is a partial sectional view of the nozzle ofFIG. 3A . -
FIG. 3C is a top view of the nozzle ofFIG. 3A . -
FIG. 3D is a sectional view of the nozzle ofFIG. 3A taken throughsection line 3C depicted inFIG. 2 . - To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.
- Embodiments of the present invention generally relate to an apparatus for providing processing gases to a process chamber with improved uniformity. More particularly, embodiments of the present invention provide a gas delivery assembly including a hub for receiving one or more gases from a source, a nozzle for injecting the one or more gases to a process chamber through a plurality of injection passages and one or more gas diffusers disposed in a top surface of the nozzle. The gas diffusers create a small pressure head when the nozzle is coupled to the hub, thus the processing gases received from a single source can have uniform flow through multiple injection points.
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FIG. 1 schematically illustrates a sectional view of asubstrate processing system 100, for processing a variety of substrates and accommodating a variety of substrate sizes, for example, a substrate diameter of up to about 300 mm or 450 mm. Thesubstrate processing system 100 includes achamber body 102 having aprocessing volume 104 defined therein. Thechamber housing assembly 102 may includesidewalls 106 and achamber lid 108. Asubstrate support assembly 110 may be disposed in theprocessing volume 104. Thesubstrate support assembly 110 supports asubstrate 112 during processing. Aslit valve opening 144 may be formed in thechamber wall 106 to allow a robot (not shown) to move substrates in and out of theprocessing volume 104. Aslit valve door 148 may be used to selectively close theslit valve opening 144. A plurality of lift pins 146 may be selectively extended from thesubstrate support assembly 110 to facilitate substrate transfer between the robot and thesubstrate support assembly 110. In one embodiment, thesubstrate support assembly 110 may include anelectrostatic chuck 113 for securing thesubstrate 112 thereon during processing. - The
chamber lid 108 has anopening 116 to allow entrance of one or more processing gases. Theopening 116 may be a central opening located near acenterline 118 of thesubstrate processing system 100 and correspond to a center of thesubstrate 112 being processed. - A
gas delivery assembly 120 is disposed over thechamber lid 108 through theopening 116. Thegas delivery assembly 120 may be connected to agas source 124 through one or moregas input lines 122 to supply one or more processing gases to theprocessing volume 104. In one embodiment, the one or more processing gases may exit theprocessing volume 104 via apumping channel 138 formed in aliner 140 disposed inside theprocessing volume 104. The pumpingchannel 138 may be in fluid communication with avacuum pump 142. Alternatively, thevacuum pump 142 may be connected to theprocessing volume 104 directly. - A
sensor 126 may be disposed over thechamber lid 108 and configured to monitor thesubstrate 112 in theprocessing volume 104 through thegas delivery assembly 120. Thesensor 126 may be connected to asystem controller 128 to provide feedback for process control. - The
system controller 128 comprises a central processing unit (CPU) (not shown), a memory (not shown), and support circuits (not shown) for the CPU and facilitates control of the components of theprocess chamber 100. Thesystem controller 128 may be one of any form of general-purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. The memory of the CPU may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote. The support circuits are coupled to the CPU for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like. The inventive method is generally stored in the memory or other computer-readable medium accessible to the CPU as a software routine. Alternatively, such software routine may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU. - Optionally, the
substrate processing system 100 may include anantenna assembly 130 disposed over thechamber lid 108. Theantenna assembly 130 is configured to generate plasma in theprocessing volume 104. Theantenna assembly 130 may include one or more solenoidal interleaved coil antennas disposed coaxial with thecenterline 118 of thesubstrate processing system 100. Aheater assembly 132 may be disposed over thechamber lid 108. Theheater assembly 132 may be secured to thechamber lid 108 by clampingmembers - The
gas delivery assembly 120 is configured to supply one or more processing gases to theprocessing volume 104 in a uniform manner.FIG. 2 is an enlarged sectional view of thegas delivery assembly 120 disposed on thechamber lid 108 with the clampingmembers heater assembly 132 removed. In the embodiment ofFIG. 2 , thecenterline 118 of theprocessing system 100 is also the centerline of thegas delivery assembly 120. - As shown in
FIG. 2 , thegas delivery assembly 120 includes ahub 210, anozzle 230 and one ormore gas diffusers 250 disposed in thenozzle 230. When assembled, thenozzle 230 is disposed through theopening 116 of thechamber lid 108. Thenozzle 230 may have aflange 232 for mounting thenozzle 230 on thechamber lid 108. A portion of thenozzle 230 protrudes into theprocessing volume 104 through theopening 116 to deliver processing gas to theprocessing volume 104. Thehub 210 is positioned on thechamber lid 108 covering theopening 116 and thenozzle 230. Thehub 210 is disposed over thenozzle 230 and provides an interface between thegas input lines 122 and thenozzle 230. - The
hub 210 has a body shaped to enclose theopening 116 and interface with thenozzle 230. The body has an outer surface facing the exterior environment and abottom surface 213 for contacting with thenozzle 230 and thechamber lid 108. In one embodiment, the body is substantially circular and concentric with thecenterline 118. The body has anouter channel 206 and aninner channel 208. In one embodiment, both inner andouter channels outer channel 206 is arranged radially outward of theinner channel 208. In one embodiment, theouter channel 206 and theinner channel 208 have different heights in the body. One ormore inlet passages outer channel 206 and theinner channel 208. Because the outer andinner channels inlet passage 212 b connected to the innercircular channel 208 does not disrupt, e.g., is isolated from, theouter channel 206. The one ormore inlet passages more inlet passages centerline 118. - The
top surface 231 of thenozzle 230 has one ormore trenches 260 and thegas diffusers 250 are disposed inside at least one of the trenches 260 (detail described below). Agland 226 may be formed in thebottom surface 213 of thehub 210 to receive aseal 276. When assembled, theglands 226 and theseals 276 surround theopening 116 of thechamber lid 108 and theseal 276 contacts thechamber lid 108 to form an air tight seal between theprocessing volume 104 and the exterior environment. Anothergland 278 may be formed between theinner channel 208 and theouter channel 206 to receive aseal 280 to form an air tight seal between the two channels. - In one embodiment, the
gas injection assembly 120 includes anobservation window 270. The body of thehub 210 may have a throughhole 222 and thenozzle 230 may be a hollow cylinder having acentral opening 240. Theobservation window 270 may be disposed between thehub 210 and thenozzle 230. In one embodiment, thenozzle 230 may have arecess 242 for supporting theobservation window 270. Thehub 210 may have agland 272 formed to receive aseal 274 to provide a vacuum seal between thehub 210 and theobservation window 270. In one embodiment, theobservation window 270 is fabricated from quartz. - The
nozzle 230 has a cylindrical body with aside wall 228 and atop surface 231 for contacting with thebottom surface 213 of thehub 210. Thenozzle 230 has a plurality ofinner injection passages 238 and a plurality ofouter injection passages 236 for injecting one or more processing gases from the outer andinner channels hub 210 to theprocessing volume 104. In one embodiment, theouter injection passages 236 are arranged radially outward of theinner injection passages 238. The outer andinner injection passages FIG. 2 , theouter injection passages 236 haveoutlets 306 disposed in theside wall 228 and are connected to theoutlets 306 by connectingpassages 330. Theinner injection passages 238 haveoutlets 350 disposed in abottom surface 235 of thenozzle 230 and directed downward from thenozzle 230. In one embodiment, the outer andinner injection passages -
FIGS. 3A-3D illustrate thenozzle 230 according to various embodiments of the invention.FIG. 3A is an isometric view of thenozzle 230, whileFIG. 3B is a partial sectional view of thenozzle 230. Thetop surface 231 of thenozzle 230 has anouter trench 302 and aninner trench 304. In one embodiment, the outer andinner trenches centerline 118. The plurality ofoutlets 306 of theouter injection passages 236 are disposed in theside wall 228. In one embodiment, theoutlets 306 are disposed evenly along the circumference of theside wall 228. - As shown in
FIG. 3B , thegas diffusers inner trenches gas diffusers bottoms inner trenches plenums gas diffusers bottoms inner trenches injection passages gas diffusers FIG. 3A , thegas diffusers holes 308. Thegas diffusers nozzle 230. In one embodiment, thenozzle 230 and thegas diffusers hub 210 and thenozzle 230 are assembled, theinner trench 304 of thenozzle 230 is aligned with theinner channel 208 of thehub 210, and theouter trench 302 of thenozzle 230 is aligned with theouter channel 206 of thehub 210. - As shown in
FIG. 3B , theouter injection passage 236 extends from thebottom 352 of theouter trench 302 to a location within thenozzle 230 that is a distance away from thetop surface 231. Theinner injection passage 238 extends from thebottom 354 of theinner trench 304 to a location within thenozzle 230 that is a distance away from thetop surface 231. In one embodiment, theinner injection passage 238 extends further into thenozzle 230 than theouter injection passage 236. -
FIG. 3C is a top view of thenozzle 230, in which thegas diffusers nozzle 230 has the plurality ofouter injection passages 236 and the plurality ofinner injection passages 238 disposed therein. In one embodiment, theouter injection passages 236 are arranged radially outward of theinner injection passages 238. As shown inFIG. 3C , theouter injection passages 236 haveinlets 320 disposed at the bottom of theouter trench 302, and theinner injection passages 236 haveinlets 310 disposed at the bottom of theinner trench 304. Theinlets outer trenches holes 308 of thegas diffusers inlets holes 308 of thediffuser 250 a equals the total surface area of theinlets 320, and the total area of theholes 308 of thediffuser 250 b equals the total surface area of theinlets 310. Thegas diffusers nozzle 230 is coupled to thehub 210, thus the processing gases received from asingle gas source 124 can have uniform flow through multiple injection points. -
FIG. 3D is a sectional view of thenozzle 230 without thegas diffusers 250. As shown inFIG. 2 , theouter injection passages 236 extends from the bottom of theouter trench 302 to a distance inside thenozzle 230 from thetop surface 231, and theoutlets 306 of theouter injection passages 236 are disposed in theside wall 228. As shown inFIG. 3D , eachoutlet 306 and the correspondingouter injection passage 236 are connected by a connectingpassage 330. The connectingpassage 330 is not perpendicular to a tangent 340 of theside wall 228 at the outlet 306 (e.g., the angle “A” inFIG. 3D does not equal to 90 degrees). In other words, the connectingpassages 330 are not radially aligned with thecenterline 118 of thechamber body 102, which is also the centerline of thehub 210,nozzle 230, andgas diffusers outlet 306 are directed in the same direction defined by the connectingpassage 330. If the angle “A” is 90 degrees, then the processing gases coming out of the outlet that is facing thevacuum pump 142 may travel at a faster speed compare to the processing gases coming out of all other outlets. By changing the angle “A” to an angle other than 90 degrees, the processing gases are coming out of each outlet at substantially the same speed, thus creating a more uniform gas flow inside the process chamber. - In summary, by adding one or more internal gas diffusers in the nozzle of a gas delivery assembly along with changing the angle of processing gases coming out of outlets disposed along the circumference of the side wall of the nozzle, a more uniform flow of the processing gases is achieved.
- While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (20)
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US15/393,828 US20170110292A1 (en) | 2013-02-25 | 2016-12-29 | Tunable gas delivery assembly with internal diffuser and angular injection |
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US201361768901P | 2013-02-25 | 2013-02-25 | |
US13/790,735 US9162236B2 (en) | 2012-04-26 | 2013-03-08 | Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus |
US13/959,801 US9536710B2 (en) | 2013-02-25 | 2013-08-06 | Tunable gas delivery assembly with internal diffuser and angular injection |
US15/393,828 US20170110292A1 (en) | 2013-02-25 | 2016-12-29 | Tunable gas delivery assembly with internal diffuser and angular injection |
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US13/959,801 Division US9536710B2 (en) | 2013-02-25 | 2013-08-06 | Tunable gas delivery assembly with internal diffuser and angular injection |
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US13/959,801 Active 2034-12-22 US9536710B2 (en) | 2013-02-25 | 2013-08-06 | Tunable gas delivery assembly with internal diffuser and angular injection |
US15/393,828 Abandoned US20170110292A1 (en) | 2013-02-25 | 2016-12-29 | Tunable gas delivery assembly with internal diffuser and angular injection |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020163428A1 (en) * | 2019-02-07 | 2020-08-13 | Mattson Technology, Inc. | Gas supply with angled injectors in plasma processing apparatus |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9388494B2 (en) * | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US9536710B2 (en) | 2013-02-25 | 2017-01-03 | Applied Materials, Inc. | Tunable gas delivery assembly with internal diffuser and angular injection |
CN104782234B (en) | 2013-03-15 | 2017-07-14 | 应用材料公司 | The plasma reactor injected with high degree of symmetry quadruple formula gas |
US10119191B2 (en) * | 2016-06-08 | 2018-11-06 | Applied Materials, Inc. | High flow gas diffuser assemblies, systems, and methods |
KR102553629B1 (en) * | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | Plasma processing apparatus |
US20190032211A1 (en) * | 2017-07-28 | 2019-01-31 | Lam Research Corporation | Monolithic ceramic gas distribution plate |
CN110223904A (en) * | 2019-07-19 | 2019-09-10 | 江苏鲁汶仪器有限公司 | A kind of plasma process system with Faraday shield device |
CN111081525B (en) * | 2019-12-31 | 2021-06-08 | 江苏鲁汶仪器有限公司 | Device for blocking plasma backflow protection air inlet structure of process chamber |
CN115362538A (en) * | 2020-04-06 | 2022-11-18 | 朗姆研究公司 | Ceramic additive manufacturing technology of gas injector |
CN113838735A (en) * | 2020-06-24 | 2021-12-24 | 拓荆科技股份有限公司 | Device for uniformly distributing gas |
KR102607844B1 (en) * | 2020-07-10 | 2023-11-30 | 세메스 주식회사 | Apparatus for treating substrate and unit for supporting substrate |
KR20220021206A (en) | 2020-08-13 | 2022-02-22 | 삼성전자주식회사 | Plasma processing apparatus |
CN118431054A (en) * | 2023-02-02 | 2024-08-02 | 江苏鲁汶仪器股份有限公司 | Edge air inlet device and plasma etching system |
Citations (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5188671A (en) * | 1990-08-08 | 1993-02-23 | Hughes Aircraft Company | Multichannel plate assembly for gas source molecular beam epitaxy |
US5284519A (en) * | 1990-05-16 | 1994-02-08 | Simon Fraser University | Inverted diffuser stagnation point flow reactor for vapor deposition of thin films |
US5542559A (en) * | 1993-02-16 | 1996-08-06 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
US5746875A (en) * | 1994-09-16 | 1998-05-05 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
US5958140A (en) * | 1995-07-27 | 1999-09-28 | Tokyo Electron Limited | One-by-one type heat-processing apparatus |
US6143078A (en) * | 1998-11-13 | 2000-11-07 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
US6209480B1 (en) * | 1996-07-10 | 2001-04-03 | Mehrdad M. Moslehi | Hermetically-sealed inductively-coupled plasma source structure and method of use |
US20010010257A1 (en) * | 1998-12-30 | 2001-08-02 | Tuqiang Ni | Gas injection system for plasma processing |
US20010015175A1 (en) * | 2000-02-21 | 2001-08-23 | Toshio Masuda | Plasma processing system and apparatus and a sample processing method |
US20010047760A1 (en) * | 1996-07-10 | 2001-12-06 | Moslehi Mehrdad M. | Apparatus and method for multi-zone high-density inductively-coupled plasma generation |
US6390019B1 (en) * | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
US20020088545A1 (en) * | 2001-01-11 | 2002-07-11 | Lee Doo Won | Gas injector comprising block of ceramic material having gas injection holes extending therethrough, and etching apparatus incorporating the same |
US6450117B1 (en) * | 2000-08-07 | 2002-09-17 | Applied Materials, Inc. | Directing a flow of gas in a substrate processing chamber |
US20020139665A1 (en) * | 1996-07-03 | 2002-10-03 | Tegal Corporation | Plasma etch reactor and method |
US20030070620A1 (en) * | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
US20030143328A1 (en) * | 2002-01-26 | 2003-07-31 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US20030192645A1 (en) * | 2002-04-16 | 2003-10-16 | Applied Materials, Inc. | Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber |
US20040082251A1 (en) * | 2002-10-29 | 2004-04-29 | Applied Materials, Inc. | Apparatus for adjustable gas distribution for semiconductor substrate processing |
US20040168769A1 (en) * | 2002-05-10 | 2004-09-02 | Takaaki Matsuoka | Plasma processing equipment and plasma processing method |
US20040187779A1 (en) * | 2003-03-27 | 2004-09-30 | Park Young Hoon | Thin film deposition reactor |
US20040217217A1 (en) * | 2003-04-09 | 2004-11-04 | Samsung Electronics Co., Ltd. | Gas supplying apparatus |
US20050092435A1 (en) * | 2002-03-27 | 2005-05-05 | Tokyo Electron Limited | Processing device, electrode, electrode plate, and processing method |
US20050103267A1 (en) * | 2003-11-14 | 2005-05-19 | Hur Gwang H. | Flat panel display manufacturing apparatus |
US20050109460A1 (en) * | 2003-05-30 | 2005-05-26 | Dedontney Jay B. | Adjustable gas distribution system |
US20060016559A1 (en) * | 2004-07-26 | 2006-01-26 | Hitachi, Ltd. | Plasma processing apparatus |
US20060021568A1 (en) * | 2003-04-10 | 2006-02-02 | Tokyo Electron Limited | Shower head structure and treating device |
US20060096540A1 (en) * | 2004-11-11 | 2006-05-11 | Choi Jin H | Apparatus to manufacture semiconductor |
US20060196603A1 (en) * | 2005-03-07 | 2006-09-07 | Applied Materials, Inc. | Gas baffle and distributor for semiconductor processing chamber |
US20060196420A1 (en) * | 2005-03-02 | 2006-09-07 | Andrey Ushakov | High density plasma chemical vapor deposition apparatus |
US20060219362A1 (en) * | 2005-04-01 | 2006-10-05 | Geun-Jo Han | Gas injector and apparatus including the same |
US20070119370A1 (en) * | 2005-11-04 | 2007-05-31 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
US20070169704A1 (en) * | 2006-01-26 | 2007-07-26 | Lam Research Corporation | Apparatus for shielding process chamber port having dual zone and optical access features |
US20070187363A1 (en) * | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US20070256785A1 (en) * | 2006-05-03 | 2007-11-08 | Sharma Pamarthy | Apparatus for etching high aspect ratio features |
US20070256786A1 (en) * | 2006-05-03 | 2007-11-08 | Xiaoping Zhou | Apparatus for etching high aspect ratio features |
US20070293043A1 (en) * | 2006-06-20 | 2007-12-20 | Lam Research Corporation | Edge gas injection for critical dimension uniformity improvement |
US20080078746A1 (en) * | 2006-08-15 | 2008-04-03 | Noriiki Masuda | Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium |
US20080083883A1 (en) * | 2006-10-06 | 2008-04-10 | Lam Research Corporation | Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access |
US20090042321A1 (en) * | 2007-03-23 | 2009-02-12 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for plasma doping |
US20090159211A1 (en) * | 2007-12-19 | 2009-06-25 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US20090159213A1 (en) * | 2007-12-19 | 2009-06-25 | Applied Materials, Inc. | Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead |
US20090159424A1 (en) * | 2007-12-19 | 2009-06-25 | Wei Liu | Dual zone gas injection nozzle |
US20090236313A1 (en) * | 2008-03-20 | 2009-09-24 | Novellus Systems, Inc. | Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes |
US20090250443A1 (en) * | 2008-04-03 | 2009-10-08 | Tes Co., Ltd. | Plasma processing apparatus |
US20090269506A1 (en) * | 2008-04-24 | 2009-10-29 | Seiji Okura | Method and apparatus for cleaning of a CVD reactor |
US20090272492A1 (en) * | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias |
US20100024727A1 (en) * | 2008-08-04 | 2010-02-04 | Samsung Electro-Mechanics Co., Ltd | Showerhead and chemical vapor deposition apparatus including the same |
US20100068891A1 (en) * | 2006-11-09 | 2010-03-18 | Masanobu Hatanaka | Method of forming barrier film |
US20100089455A1 (en) * | 2008-10-09 | 2010-04-15 | Marcus Frank F | Long distance gassing apparatus and methods |
US20100180819A1 (en) * | 2007-04-17 | 2010-07-22 | Ulvac, Inc. | Film-forming apparatus |
US20100230387A1 (en) * | 2006-06-13 | 2010-09-16 | Tokyo Electron Limited | Shower Plate, Method for Manufacturing the Shower Plate, Plasma Processing Apparatus using the Shower Plate, Plasma Processing Method and Electronic Device Manufacturing Method |
US20100276084A1 (en) * | 2008-01-14 | 2010-11-04 | Liqiang Yao | Plasma processing equipment and gas distribution apparatus thereof |
US20100310772A1 (en) * | 2008-02-20 | 2010-12-09 | Tokyo Electron Limited | Gas supply device |
WO2011004987A2 (en) * | 2009-07-08 | 2011-01-13 | 주식회사 유진테크 | Substrate-processing apparatus and substrate-processing method for selectively inserting diffusion plates |
WO2011023078A1 (en) * | 2009-08-27 | 2011-03-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching device and gas intake system for deep silicon etching device |
US20110048642A1 (en) * | 2009-09-02 | 2011-03-03 | Tokyo Electron Limited | Plasma processing apparatus |
US20110056626A1 (en) * | 2009-09-10 | 2011-03-10 | Lam Research Corporation | Replaceable upper chamber parts of plasma processing apparatus |
US20110073564A1 (en) * | 2009-09-25 | 2011-03-31 | Applied Materials, Inc. | Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor |
US20110079356A1 (en) * | 2009-10-01 | 2011-04-07 | Kim Minshik | Side gas injector for plasma reaction chamber |
US20110114261A1 (en) * | 2008-07-09 | 2011-05-19 | Tokyo Electron Limited | Plasma processing apparatus |
US20110162800A1 (en) * | 2009-12-04 | 2011-07-07 | Applied Materials, Inc. | Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads |
US20110198417A1 (en) * | 2010-02-12 | 2011-08-18 | Applied Materials, Inc. | Process chamber gas flow improvements |
US20110256315A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Showerhead assembly with gas injection distribution devices |
US20110291568A1 (en) * | 2010-05-26 | 2011-12-01 | Tokyo Electron Limted | Plasma processing apparatus and processing gas supply structure thereof |
US20120091095A1 (en) * | 2010-10-15 | 2012-04-19 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
US20120111271A1 (en) * | 2007-10-11 | 2012-05-10 | Begarney Michael J | Chemical vapor deposition reactor |
WO2012071661A1 (en) * | 2010-11-30 | 2012-06-07 | Socpra Sciences Et Genie S.E.C. | Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith |
US20120152900A1 (en) * | 2010-12-20 | 2012-06-21 | Applied Materials, Inc. | Methods and apparatus for gas delivery into plasma processing chambers |
WO2013051248A1 (en) * | 2011-10-07 | 2013-04-11 | 東京エレクトロン株式会社 | Plasma processing apparatus |
US20130098554A1 (en) * | 2011-10-25 | 2013-04-25 | Lam Research Corporation | Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber |
US20130109159A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Gas dispersion apparatus |
US20130206066A1 (en) * | 2012-01-26 | 2013-08-15 | Samsung Electronics Co., Ltd. | Thin film deposition apparatus |
US20130284700A1 (en) * | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus |
US20130295297A1 (en) * | 2012-05-01 | 2013-11-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor film formation apparatus and process |
US20130344245A1 (en) * | 2012-06-25 | 2013-12-26 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US20140020837A1 (en) * | 2012-07-20 | 2014-01-23 | Applied Materials, Inc. | Inductively coupled plasma source with multiple dielectric windows and window-supporting structure |
US20140073143A1 (en) * | 2012-09-12 | 2014-03-13 | Asm Ip Holdings B.V. | Process Gas Management for an Inductively-Coupled Plasma Deposition Reactor |
US20140083615A1 (en) * | 2012-09-25 | 2014-03-27 | Gen Co., Ltd. | Antenna assembly and a plasma processing chamber having the same |
US20140209596A1 (en) * | 2013-01-25 | 2014-07-31 | Applied Materials, Inc. | Electrostatic chuck with concentric cooling base |
US20140237840A1 (en) * | 2013-02-25 | 2014-08-28 | Applied Materials, Inc. | Tunable gas delivery assembly with internal diffuser and angular injection |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3380091B2 (en) * | 1995-06-09 | 2003-02-24 | 株式会社荏原製作所 | Reactive gas injection head and thin film vapor phase growth apparatus |
KR20030095801A (en) | 2002-06-14 | 2003-12-24 | 주성엔지니어링(주) | HPD-CVD apparatus having rotation type injector and gap filling method using the same |
KR100862658B1 (en) * | 2002-11-15 | 2008-10-10 | 삼성전자주식회사 | Gas injection apparatus for semiconductor processing system |
KR100614648B1 (en) * | 2004-07-15 | 2006-08-23 | 삼성전자주식회사 | Apparatus for treating substrates used in manufacturing semiconductor devices |
KR101063752B1 (en) | 2009-06-08 | 2011-09-08 | 주식회사 에스엠아이 | Shower head of chemical vapor deposition apparatus |
KR100996210B1 (en) | 2010-04-12 | 2010-11-24 | 세메스 주식회사 | Gas injection unit and apparatus and method for depositing thin layer with the same |
CN104782234B (en) | 2013-03-15 | 2017-07-14 | 应用材料公司 | The plasma reactor injected with high degree of symmetry quadruple formula gas |
-
2013
- 2013-08-06 US US13/959,801 patent/US9536710B2/en active Active
-
2014
- 2014-02-03 WO PCT/US2014/014455 patent/WO2014130230A1/en active Application Filing
- 2014-02-06 TW TW103103944A patent/TWI615499B/en active
- 2014-02-06 TW TW106116779A patent/TWI648425B/en active
-
2016
- 2016-12-29 US US15/393,828 patent/US20170110292A1/en not_active Abandoned
Patent Citations (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5284519A (en) * | 1990-05-16 | 1994-02-08 | Simon Fraser University | Inverted diffuser stagnation point flow reactor for vapor deposition of thin films |
US5188671A (en) * | 1990-08-08 | 1993-02-23 | Hughes Aircraft Company | Multichannel plate assembly for gas source molecular beam epitaxy |
US5542559A (en) * | 1993-02-16 | 1996-08-06 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
US5746875A (en) * | 1994-09-16 | 1998-05-05 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
US5958140A (en) * | 1995-07-27 | 1999-09-28 | Tokyo Electron Limited | One-by-one type heat-processing apparatus |
US20020139665A1 (en) * | 1996-07-03 | 2002-10-03 | Tegal Corporation | Plasma etch reactor and method |
US6209480B1 (en) * | 1996-07-10 | 2001-04-03 | Mehrdad M. Moslehi | Hermetically-sealed inductively-coupled plasma source structure and method of use |
US20010047760A1 (en) * | 1996-07-10 | 2001-12-06 | Moslehi Mehrdad M. | Apparatus and method for multi-zone high-density inductively-coupled plasma generation |
US6390019B1 (en) * | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
US6835275B1 (en) * | 1998-06-11 | 2004-12-28 | Michael N. Grimbergen | Reducing deposition of process residues on a surface in a chamber |
US6143078A (en) * | 1998-11-13 | 2000-11-07 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
US20010010257A1 (en) * | 1998-12-30 | 2001-08-02 | Tuqiang Ni | Gas injection system for plasma processing |
US20010015175A1 (en) * | 2000-02-21 | 2001-08-23 | Toshio Masuda | Plasma processing system and apparatus and a sample processing method |
US6450117B1 (en) * | 2000-08-07 | 2002-09-17 | Applied Materials, Inc. | Directing a flow of gas in a substrate processing chamber |
US20020088545A1 (en) * | 2001-01-11 | 2002-07-11 | Lee Doo Won | Gas injector comprising block of ceramic material having gas injection holes extending therethrough, and etching apparatus incorporating the same |
US20030070620A1 (en) * | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
US20030143328A1 (en) * | 2002-01-26 | 2003-07-31 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US20050092435A1 (en) * | 2002-03-27 | 2005-05-05 | Tokyo Electron Limited | Processing device, electrode, electrode plate, and processing method |
US20030192645A1 (en) * | 2002-04-16 | 2003-10-16 | Applied Materials, Inc. | Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber |
US20040168769A1 (en) * | 2002-05-10 | 2004-09-02 | Takaaki Matsuoka | Plasma processing equipment and plasma processing method |
US20040082251A1 (en) * | 2002-10-29 | 2004-04-29 | Applied Materials, Inc. | Apparatus for adjustable gas distribution for semiconductor substrate processing |
US20040187779A1 (en) * | 2003-03-27 | 2004-09-30 | Park Young Hoon | Thin film deposition reactor |
US20040217217A1 (en) * | 2003-04-09 | 2004-11-04 | Samsung Electronics Co., Ltd. | Gas supplying apparatus |
US20060021568A1 (en) * | 2003-04-10 | 2006-02-02 | Tokyo Electron Limited | Shower head structure and treating device |
US20050109460A1 (en) * | 2003-05-30 | 2005-05-26 | Dedontney Jay B. | Adjustable gas distribution system |
US20050103267A1 (en) * | 2003-11-14 | 2005-05-19 | Hur Gwang H. | Flat panel display manufacturing apparatus |
US20060016559A1 (en) * | 2004-07-26 | 2006-01-26 | Hitachi, Ltd. | Plasma processing apparatus |
US20060096540A1 (en) * | 2004-11-11 | 2006-05-11 | Choi Jin H | Apparatus to manufacture semiconductor |
US20060196420A1 (en) * | 2005-03-02 | 2006-09-07 | Andrey Ushakov | High density plasma chemical vapor deposition apparatus |
US20060196603A1 (en) * | 2005-03-07 | 2006-09-07 | Applied Materials, Inc. | Gas baffle and distributor for semiconductor processing chamber |
US20060219362A1 (en) * | 2005-04-01 | 2006-10-05 | Geun-Jo Han | Gas injector and apparatus including the same |
US20070119370A1 (en) * | 2005-11-04 | 2007-05-31 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
US20070119371A1 (en) * | 2005-11-04 | 2007-05-31 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
US20070169704A1 (en) * | 2006-01-26 | 2007-07-26 | Lam Research Corporation | Apparatus for shielding process chamber port having dual zone and optical access features |
US20070187363A1 (en) * | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US20070256785A1 (en) * | 2006-05-03 | 2007-11-08 | Sharma Pamarthy | Apparatus for etching high aspect ratio features |
US20070256786A1 (en) * | 2006-05-03 | 2007-11-08 | Xiaoping Zhou | Apparatus for etching high aspect ratio features |
US20100230387A1 (en) * | 2006-06-13 | 2010-09-16 | Tokyo Electron Limited | Shower Plate, Method for Manufacturing the Shower Plate, Plasma Processing Apparatus using the Shower Plate, Plasma Processing Method and Electronic Device Manufacturing Method |
US20070293043A1 (en) * | 2006-06-20 | 2007-12-20 | Lam Research Corporation | Edge gas injection for critical dimension uniformity improvement |
US20080078746A1 (en) * | 2006-08-15 | 2008-04-03 | Noriiki Masuda | Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium |
US20080083883A1 (en) * | 2006-10-06 | 2008-04-10 | Lam Research Corporation | Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access |
US20100068891A1 (en) * | 2006-11-09 | 2010-03-18 | Masanobu Hatanaka | Method of forming barrier film |
US20090042321A1 (en) * | 2007-03-23 | 2009-02-12 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for plasma doping |
US20100180819A1 (en) * | 2007-04-17 | 2010-07-22 | Ulvac, Inc. | Film-forming apparatus |
US20120111271A1 (en) * | 2007-10-11 | 2012-05-10 | Begarney Michael J | Chemical vapor deposition reactor |
US20090159211A1 (en) * | 2007-12-19 | 2009-06-25 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US20090159213A1 (en) * | 2007-12-19 | 2009-06-25 | Applied Materials, Inc. | Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead |
US20090159424A1 (en) * | 2007-12-19 | 2009-06-25 | Wei Liu | Dual zone gas injection nozzle |
US20100276084A1 (en) * | 2008-01-14 | 2010-11-04 | Liqiang Yao | Plasma processing equipment and gas distribution apparatus thereof |
US20100310772A1 (en) * | 2008-02-20 | 2010-12-09 | Tokyo Electron Limited | Gas supply device |
US20090236313A1 (en) * | 2008-03-20 | 2009-09-24 | Novellus Systems, Inc. | Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes |
US20090250443A1 (en) * | 2008-04-03 | 2009-10-08 | Tes Co., Ltd. | Plasma processing apparatus |
US20090269506A1 (en) * | 2008-04-24 | 2009-10-29 | Seiji Okura | Method and apparatus for cleaning of a CVD reactor |
US20090275206A1 (en) * | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias |
US20090272492A1 (en) * | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias |
US20110114261A1 (en) * | 2008-07-09 | 2011-05-19 | Tokyo Electron Limited | Plasma processing apparatus |
US20100024727A1 (en) * | 2008-08-04 | 2010-02-04 | Samsung Electro-Mechanics Co., Ltd | Showerhead and chemical vapor deposition apparatus including the same |
US20100089455A1 (en) * | 2008-10-09 | 2010-04-15 | Marcus Frank F | Long distance gassing apparatus and methods |
WO2011004987A2 (en) * | 2009-07-08 | 2011-01-13 | 주식회사 유진테크 | Substrate-processing apparatus and substrate-processing method for selectively inserting diffusion plates |
US20120135145A1 (en) * | 2009-07-08 | 2012-05-31 | Sung Tae Je | Substrate-processing apparatus and substrate-processing method for selectively inserting diffusion plates |
WO2011023078A1 (en) * | 2009-08-27 | 2011-03-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching device and gas intake system for deep silicon etching device |
US20120138228A1 (en) * | 2009-08-27 | 2012-06-07 | Beijing Nmc Co., Ltd. | Deep-trench silicon etching and gas inlet system thereof |
US20110048642A1 (en) * | 2009-09-02 | 2011-03-03 | Tokyo Electron Limited | Plasma processing apparatus |
US20110056626A1 (en) * | 2009-09-10 | 2011-03-10 | Lam Research Corporation | Replaceable upper chamber parts of plasma processing apparatus |
US20110073564A1 (en) * | 2009-09-25 | 2011-03-31 | Applied Materials, Inc. | Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor |
US20110079356A1 (en) * | 2009-10-01 | 2011-04-07 | Kim Minshik | Side gas injector for plasma reaction chamber |
US20110162800A1 (en) * | 2009-12-04 | 2011-07-07 | Applied Materials, Inc. | Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads |
US20110198417A1 (en) * | 2010-02-12 | 2011-08-18 | Applied Materials, Inc. | Process chamber gas flow improvements |
US20110256645A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor showerhead with by-pass ports |
US20110256692A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
US20110253044A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Showerhead assembly with metrology port purge |
US20110256315A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Showerhead assembly with gas injection distribution devices |
US20110291568A1 (en) * | 2010-05-26 | 2011-12-01 | Tokyo Electron Limted | Plasma processing apparatus and processing gas supply structure thereof |
US20120091095A1 (en) * | 2010-10-15 | 2012-04-19 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
US20190295826A1 (en) * | 2010-10-15 | 2019-09-26 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
US10658161B2 (en) * | 2010-10-15 | 2020-05-19 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
WO2012071661A1 (en) * | 2010-11-30 | 2012-06-07 | Socpra Sciences Et Genie S.E.C. | Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith |
US20130248611A1 (en) * | 2010-11-30 | 2013-09-26 | Socpra Sciences Et Genie S.E.C. | Epitaxial Deposition Apparatus, Gas Injectors, and Chemical Vapor Management System Associated Therewith |
US20120152900A1 (en) * | 2010-12-20 | 2012-06-21 | Applied Materials, Inc. | Methods and apparatus for gas delivery into plasma processing chambers |
US20140262034A1 (en) * | 2011-10-07 | 2014-09-18 | Tokyo Electron Limited | Plasma processing apparatus |
WO2013051248A1 (en) * | 2011-10-07 | 2013-04-11 | 東京エレクトロン株式会社 | Plasma processing apparatus |
US20130098554A1 (en) * | 2011-10-25 | 2013-04-25 | Lam Research Corporation | Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber |
US20130109159A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Gas dispersion apparatus |
US20130206066A1 (en) * | 2012-01-26 | 2013-08-15 | Samsung Electronics Co., Ltd. | Thin film deposition apparatus |
US20130284700A1 (en) * | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus |
US9162236B2 (en) * | 2012-04-26 | 2015-10-20 | Applied Materials, Inc. | Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus |
US20130295297A1 (en) * | 2012-05-01 | 2013-11-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor film formation apparatus and process |
US20130344245A1 (en) * | 2012-06-25 | 2013-12-26 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US20140020836A1 (en) * | 2012-07-20 | 2014-01-23 | Applied Materials, Inc. | Inductively coupled plasma source with plural top coils over a ceiling and an independent side coil |
US20140020835A1 (en) * | 2012-07-20 | 2014-01-23 | Applied Materials, Inc. | Symmetrical inductively coupled plasma source with symmetrical flow chamber |
US20140020837A1 (en) * | 2012-07-20 | 2014-01-23 | Applied Materials, Inc. | Inductively coupled plasma source with multiple dielectric windows and window-supporting structure |
US20140073143A1 (en) * | 2012-09-12 | 2014-03-13 | Asm Ip Holdings B.V. | Process Gas Management for an Inductively-Coupled Plasma Deposition Reactor |
US20140083615A1 (en) * | 2012-09-25 | 2014-03-27 | Gen Co., Ltd. | Antenna assembly and a plasma processing chamber having the same |
US20140209596A1 (en) * | 2013-01-25 | 2014-07-31 | Applied Materials, Inc. | Electrostatic chuck with concentric cooling base |
US20140237840A1 (en) * | 2013-02-25 | 2014-08-28 | Applied Materials, Inc. | Tunable gas delivery assembly with internal diffuser and angular injection |
US9536710B2 (en) * | 2013-02-25 | 2017-01-03 | Applied Materials, Inc. | Tunable gas delivery assembly with internal diffuser and angular injection |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020163428A1 (en) * | 2019-02-07 | 2020-08-13 | Mattson Technology, Inc. | Gas supply with angled injectors in plasma processing apparatus |
CN112437969A (en) * | 2019-02-07 | 2021-03-02 | 玛特森技术公司 | Gas supply device with angled nozzle in plasma processing apparatus |
Also Published As
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US20140237840A1 (en) | 2014-08-28 |
TWI648425B (en) | 2019-01-21 |
TW201732074A (en) | 2017-09-16 |
US9536710B2 (en) | 2017-01-03 |
TWI615499B (en) | 2018-02-21 |
TW201441414A (en) | 2014-11-01 |
WO2014130230A1 (en) | 2014-08-28 |
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