JP2015504599A - テクスチャ構造を有する熱膨張制御型フレキシブル金属基板材 - Google Patents
テクスチャ構造を有する熱膨張制御型フレキシブル金属基板材 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 129
- 239000000463 material Substances 0.000 title claims abstract description 108
- 239000002184 metal Substances 0.000 title claims abstract description 96
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000005323 electroforming Methods 0.000 claims abstract description 20
- 238000007747 plating Methods 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000011888 foil Substances 0.000 claims description 30
- 239000013078 crystal Substances 0.000 claims description 27
- 229910052759 nickel Inorganic materials 0.000 claims description 20
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 19
- 239000010703 silicon Substances 0.000 abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 239000000956 alloy Substances 0.000 abstract description 15
- 239000010409 thin film Substances 0.000 abstract description 15
- 239000000203 mixture Substances 0.000 abstract description 12
- 229910045601 alloy Inorganic materials 0.000 abstract description 10
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000006641 stabilisation Effects 0.000 description 32
- 238000011105 stabilization Methods 0.000 description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 16
- 239000008151 electrolyte solution Substances 0.000 description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 238000005096 rolling process Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 4
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229960002089 ferrous chloride Drugs 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 230000000930 thermomechanical effect Effects 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 2
- 229940081974 saccharin Drugs 0.000 description 2
- 235000019204 saccharin Nutrition 0.000 description 2
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910021577 Iron(II) chloride Inorganic materials 0.000 description 1
- 239000002211 L-ascorbic acid Substances 0.000 description 1
- 235000000069 L-ascorbic acid Nutrition 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 229910000358 iron sulfate Inorganic materials 0.000 description 1
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002707 nanocrystalline material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/003—3D structures, e.g. superposed patterned layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/1241—Nonplanar uniform thickness or nonlinear uniform diameter [e.g., L-shape]
Abstract
Description
Fe−40wt%Ni金属基板材は、以下の組成を持つ電解質溶液を使用して、図1に示すようにピラミッド状のテクスチャ構造を持つめっき用ドラムが設置された電鋳装置を使用して製造した。金属電解質溶液は、塩化第一鉄(Iron(II)chloride4.hydrate)30g/L、ニッケルスルファメート200g/L、ホウ酸20g/L、ドデシル硫酸ナトリウム1g/L、サッカリン2g/L、抗酸化剤1g/Lを含むように製造した。電解質溶液の温度は60℃に維持し、電流密度は56mA/cm2に調節し、厚さが30μmとなるようにして、Fe−40wt%Niの金属基板材を製造した。
電解質溶液組成を調節して実施例1と類似した方法でFe−42wt%Ni金属箔を製造した。製造された基板材の凹凸構造は、傾斜角が60°であるピラミッド形状である。400℃乃至1000℃で組織安定化工程を処理した後の結晶粒の大きさは0.1μm乃至10μmに成長した。
電解質溶液組成を調節して実施例1と類似した方法でFe−44wt%Ni金属箔を製造した。製造された基板材のテクスチャ構造は、傾斜角が60°であるピラミッド形状である。400℃乃至1000℃の組織安定化工程の後、結晶粒の大きさは0.1μm〜10μmに成長した。
実施例2の組成を持つ電解液及び電鋳装置を使用してFe−42wt%Ni金属箔を製造した。この時、基板材のテクスチャ構造は、傾斜角がそれぞれ30°、45°、60°であるV字型と、傾斜角がそれぞれ30°、45°、60°であるピラミッド形状に製造した。製造されたそれぞれの基板材の表面反射率を測定して図8a及び図8bに示した。
実施例2の方法で製造された金属箔基板材に対して、組織安定化工程の処理温度による硬度を測定した。その結果を図9に示した。図9は、熱処理温度による硬度の最大、最小、平均値を示したものである。図9を見ると、電鋳工程の後製造された基板材の場合、硬度の平均値は472.02Hzであるが、350℃で熱処理した後は、硬度値が592.5Hzまで大きく増加したことが分かる。以後、熱処理温度が増加するにつれて、800℃では193.6Hzまで減少することが確認された。これは、熱処理温度による結晶粒の成長に起因するものと判断される。マイクロサイズの結晶粒の場合、結晶粒内で電位の発生と移動が可能なため、軟性がほとんどないナノ結晶質状態の電着材に比べて、熱処理された試片の場合、軟性があるものと予想される。
200:めっき用ドラム
300:ローラー
400:陽極電極
500:V字型断面凹凸構造を有する基板
600:ピラミッド状凹凸構造を有する基板
700:グレーティング基板
Claims (12)
- 表面にテクスチャ構造を有する太陽電池用フレキシブル金属基板材であって、
前記テクスチャ構造は、電鋳方法により表面に凹凸構造を有するめっき用ドラム又はプレートを利用して形成された太陽電池用フレキシブル金属基板材。 - 前記フレキシブル金属基板材は、Fe−40wt%Ni乃至Fe−45wt%Ni合金箔基板材であることを特徴とする請求項1に記載の太陽電池用フレキシブル金属基板材。
- 前記フレキシブル金属基板材は、350℃乃至1000℃で30分乃至2時間熱処理して、マイクロサイズの結晶粒が形成されることを特徴とする請求項1に記載の太陽電池用フレキシブル金属基板材。
- 前記フレキシブル金属基板材の結晶粒の大きさは0.1μm乃至10μmであり、面心立方晶の単一相構造を有することを特徴とする請求項1乃至3の何れか1項に記載の太陽電池用フレキシブル金属基板材。
- 前記フレキシブル金属基板材の熱膨張係数は2×10−6/℃乃至6×10−6/℃であることを特徴とする請求項1乃至3の何れか1項に記載の太陽電池用フレキシブル金属基板材。
- 前記フレキシブル金属基板材の厚さは1μm乃至100μmであることを特徴とする請求項1乃至3の何れか1項に記載の太陽電池用フレキシブル金属基板材。
- 電鋳方法で表面に凹凸構造を有するめっき用ドラム又はプレートを利用して、表面にテクスチャ構造を有する金属基板を形成する段階と、
前記電鋳方法で製造された金属基板を熱処理してマイクロサイズの結晶粒を形成する段階とを含む太陽電池用フレキシブル金属基板材の製造方法。 - 前記金属基板はFe−40wt%Ni乃至Fe−45wt%Ni合金であることを特徴とする請求項7に記載の太陽電池用フレキシブル金属基板材の製造方法。
- Fe−40wt%Ni乃至Fe−45wt%Ni合金からなり、
熱膨張係数が2×10−6/℃乃至6×10−6/℃であるグレーティング用フレキシブル金属基板材。 - 前記フレキシブル金属基板材は、表面にグレーティングをなす凹凸構造が形成されることを特徴とする請求項9に記載のグレーティング用フレキシブル金属基板材。
- 前記フレキシブル金属基板材は、表面にテクスチャ構造を有することを特徴とする請求項9に記載のグレーティング用フレキシブル金属基板材。
- 前記フレキシブル金属基板材は、結晶粒の大きさが0.1μm乃至10μmであることを特徴とする請求項9に記載のグレーティング用フレキシブル金属基板材。
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KR20110120181 | 2011-11-17 | ||
KR10-2011-0120181 | 2011-11-17 | ||
KR1020120114243A KR101422609B1 (ko) | 2011-11-17 | 2012-10-15 | 텍스처 구조를 갖는 열팽창 제어형 플렉서블 금속 기판재 |
KR10-2012-0114243 | 2012-10-15 | ||
PCT/KR2012/008429 WO2013073778A1 (ko) | 2011-11-17 | 2012-10-16 | 텍스처 구조를 갖는 열팽창 제어형 플렉서블 금속 기판재 |
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Cited By (3)
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JP2018040055A (ja) * | 2016-09-08 | 2018-03-15 | ポスコPosco | 鉄‐ニッケル合金箔及びその製造方法 |
WO2022014669A1 (ja) * | 2020-07-16 | 2022-01-20 | 東洋鋼鈑株式会社 | 電解鉄箔 |
JPWO2022014668A1 (ja) * | 2020-07-16 | 2022-01-20 |
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KR101374690B1 (ko) | 2011-11-16 | 2014-03-31 | 한국생산기술연구원 | Cigs 태양전지용 철-니켈 합금 금속 포일 기판재 |
HUP1400380A2 (hu) * | 2014-08-07 | 2016-03-29 | Ecosolifer Ag | Napelem cella elrendezés |
KR101665802B1 (ko) | 2014-12-23 | 2016-10-13 | 주식회사 포스코 | 열 복원성이 우수한 Fe-Ni계 합금 금속박 및 그 제조방법 |
KR101726027B1 (ko) * | 2014-12-26 | 2017-04-12 | 주식회사 포스코 | 표면이 미려한 Fe-Ni계 금속박 |
CN106764382A (zh) * | 2016-12-30 | 2017-05-31 | 常州世竟液态金属有限公司 | 一种非晶柔性板 |
KR20180087537A (ko) * | 2017-01-24 | 2018-08-02 | 삼성디스플레이 주식회사 | 전기 도금 마스크, 이를 이용하여 제작된 유기발광 표시장치 및 이의 제작방법 |
KR102043503B1 (ko) * | 2017-09-22 | 2019-11-12 | 주식회사 포스코 | 전기도금법에 의한 표면조도가 우수한 Fe-Ni 합금도금 포일 제조방법 및 표면조도 향상용 도금액 |
CN108468072B (zh) * | 2018-03-13 | 2020-05-05 | 阿德文泰克全球有限公司 | 铁镍合金荫罩及其制备方法 |
KR102175740B1 (ko) * | 2018-11-19 | 2020-11-06 | 주식회사 포스코 | 판 형상이 우수한 철-니켈(Fe-Ni) 합금박의 제조방법 |
KR20240009346A (ko) * | 2022-07-13 | 2024-01-22 | 순천대학교 산학협력단 | 전주도금 Fe-Ni 합금 박의 열처리 방법과 전주도금 Fe-Ni 합금 박 |
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US20140332069A1 (en) | 2014-11-13 |
JP6246727B2 (ja) | 2017-12-13 |
KR101422609B1 (ko) | 2014-07-24 |
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