JP2015226010A - 静電吸着装置、静電チャック、及び冷却処理装置 - Google Patents
静電吸着装置、静電チャック、及び冷却処理装置 Download PDFInfo
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- JP2015226010A JP2015226010A JP2014111285A JP2014111285A JP2015226010A JP 2015226010 A JP2015226010 A JP 2015226010A JP 2014111285 A JP2014111285 A JP 2014111285A JP 2014111285 A JP2014111285 A JP 2014111285A JP 2015226010 A JP2015226010 A JP 2015226010A
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- 238000001816 cooling Methods 0.000 title claims description 39
- 239000004020 conductor Substances 0.000 claims abstract description 24
- 238000001179 sorption measurement Methods 0.000 claims description 41
- 239000007789 gas Substances 0.000 description 31
- 230000005291 magnetic effect Effects 0.000 description 23
- 238000000034 method Methods 0.000 description 22
- 230000006837 decompression Effects 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 6
- 230000005290 antiferromagnetic effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】この静電吸着装置の静電チャックでは、基台上に第1絶縁層が設けられる。第1絶縁層の第1部分は基台の第1面上で延在し、第1絶縁層の第2部分は基台の第2面の少なくとも一部の上で延在する。第1絶縁層の第1部分上には吸着電極が設けられる。第1絶縁層の第1部分及び吸着電極上には第2絶縁層が設けられている。吸着電極からは導体パターンが延びており、当該導体パターンは、第1絶縁層の第2部分上に給電端子を提供する。この給電端子には、付勢部材によって付勢された端子部材の接触部が当接する。この端子部材には、電源に接続された配線が接続される。
【選択図】図2
Description
Claims (8)
- 被処理体を吸着するための静電チャックであり、
第1面、及び、該第1面とは異なる第2面を含む基台と、
前記基台上に設けられた第1絶縁層であり、前記第1面上で延在する第1部分、及び、前記第2面の少なくとも一部の上で延在する第2部分を含む、該第1絶縁層と、
前記第1部分上に設けられた吸着電極と、
前記第1部分及び前記吸着電極上に設けられた第2絶縁層と、
前記第1絶縁層上に設けられており、且つ、前記吸着電極に電気的に接続された導体パターンであり、前記第2部分上に設けられた給電端子を含む、該導体パターンと、
を有する、該静電チャックと、
前記給電端子に当接される接触部を有する端子部材と、
前記端子部材の前記接触部を前記給電端子に対して付勢する手段と、
前記端子部材に電気的に接続される配線と、
前記配線に電気的に接続される電源と、
を備える、静電吸着装置。 - 前記付勢する手段はねじであり、
前記ねじを支持する絶縁性の支持部材を更に備える、
請求項1に記載の静電吸着装置。 - 前記接触部は、導電性のバネを含む、請求項1又は2に記載の静電吸着装置。
- 前記配線は、前記付勢する手段を介して前記端子部材に電気的に接続される、請求項1〜3の何れか一項に記載の静電吸着装置。
- 前記第2面は前記第1面に非平行な方向に延びる領域を含み、
前記給電端子は前記第2部分を介して前記第2面の前記領域上に設けられている、
請求項1〜4の何れか一項に記載の静電吸着装置。 - −263℃〜−60℃の範囲内の温度で被処理体を吸着する、請求項1〜5の何れか一項に記載の静電吸着装置。
- 被処理体を吸着するための静電チャックであり、
第1面、及び、該第1面とは異なる第2面を含む基台と、
前記基台上に設けられた第1絶縁層であり、前記第1面上で延在する第1部分、及び、前記第2面の少なくとも一部の上で延在する第2部分を含む、該第1絶縁層と、
前記第1部分上に設けられた吸着電極と、
前記第1部分及び前記吸着電極上に設けられた第2絶縁層と、
前記第1絶縁層上に設けられており、且つ、前記吸着電極に電気的に接続された導体パターンであり、前記第2部分上に設けられた給電端子を含む、該導体パターンと、
を備える静電チャック。 - 処理容器と、
請求項1〜6の何れか一項に記載の静電吸着装置であり、前記処理容器内に前記静電チャックが設けられた、該静電吸着装置と、
前記静電チャックを冷却するための冷凍機と、
を備える冷却処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014111285A JP6358856B2 (ja) | 2014-05-29 | 2014-05-29 | 静電吸着装置及び冷却処理装置 |
KR1020150068979A KR101791302B1 (ko) | 2014-05-29 | 2015-05-18 | 정전 흡착 장치, 정전 척 및 냉각 처리 장치 |
TW104115879A TWI659497B (zh) | 2014-05-29 | 2015-05-19 | 靜電吸附裝置、靜電夾具及冷卻處理裝置 |
US14/721,408 US9787222B2 (en) | 2014-05-29 | 2015-05-26 | Electrostatic attraction apparatus, electrostatic chuck and cooling treatment apparatus |
SG10201504222SA SG10201504222SA (en) | 2014-05-29 | 2015-05-28 | Electrostatic Attraction Apparatus, Electrostatic Chuck And Cooling Treatment Apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2014111285A JP6358856B2 (ja) | 2014-05-29 | 2014-05-29 | 静電吸着装置及び冷却処理装置 |
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JP2015226010A true JP2015226010A (ja) | 2015-12-14 |
JP6358856B2 JP6358856B2 (ja) | 2018-07-18 |
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JP2014111285A Active JP6358856B2 (ja) | 2014-05-29 | 2014-05-29 | 静電吸着装置及び冷却処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9787222B2 (ja) |
JP (1) | JP6358856B2 (ja) |
KR (1) | KR101791302B1 (ja) |
SG (1) | SG10201504222SA (ja) |
TW (1) | TWI659497B (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107895701A (zh) * | 2016-10-04 | 2018-04-10 | 株式会社迪思科 | 静电卡盘板的供电装置 |
WO2019164761A1 (en) * | 2018-02-23 | 2019-08-29 | Lam Research Corporation | Multi-plate electrostatic chucks with ceramic baseplates |
KR20200026827A (ko) | 2017-07-07 | 2020-03-11 | 도쿄엘렉트론가부시키가이샤 | 거치대 구조 및 처리 장치 |
KR20200031536A (ko) | 2018-09-14 | 2020-03-24 | 도쿄엘렉트론가부시키가이샤 | 기판 배치 기구, 성막 장치 및 성막 방법 |
KR20200047385A (ko) | 2018-10-25 | 2020-05-07 | 도쿄엘렉트론가부시키가이샤 | 스테이지 장치 및 처리 장치 |
KR20200047386A (ko) | 2018-10-25 | 2020-05-07 | 도쿄엘렉트론가부시키가이샤 | 스테이지 장치 및 처리 장치 |
KR20210102846A (ko) | 2020-02-12 | 2021-08-20 | 도쿄엘렉트론가부시키가이샤 | 스테이지 장치, 급전 기구, 및 처리 장치 |
US11417504B2 (en) | 2018-10-25 | 2022-08-16 | Tokyo Electron Limited | Stage device and processing apparatus |
US11967517B2 (en) | 2019-02-12 | 2024-04-23 | Lam Research Corporation | Electrostatic chuck with ceramic monolithic body |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US11149345B2 (en) * | 2017-12-11 | 2021-10-19 | Applied Materials, Inc. | Cryogenically cooled rotatable electrostatic chuck |
JP7210960B2 (ja) * | 2018-09-21 | 2023-01-24 | 東京エレクトロン株式会社 | 真空処理装置及び基板搬送方法 |
JP7151368B2 (ja) * | 2018-10-19 | 2022-10-12 | 東京エレクトロン株式会社 | 酸化処理モジュール、基板処理システム及び酸化処理方法 |
CN113557475A (zh) * | 2019-03-13 | 2021-10-26 | Asml控股股份有限公司 | 用于光刻设备的静电夹具 |
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2014
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-
2015
- 2015-05-18 KR KR1020150068979A patent/KR101791302B1/ko active IP Right Grant
- 2015-05-19 TW TW104115879A patent/TWI659497B/zh active
- 2015-05-26 US US14/721,408 patent/US9787222B2/en active Active
- 2015-05-28 SG SG10201504222SA patent/SG10201504222SA/en unknown
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CN107895701B (zh) * | 2016-10-04 | 2023-06-30 | 株式会社迪思科 | 静电卡盘板的供电装置 |
JP2018060894A (ja) * | 2016-10-04 | 2018-04-12 | 株式会社ディスコ | 静電チャックプレートの給電装置 |
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US11967517B2 (en) | 2019-02-12 | 2024-04-23 | Lam Research Corporation | Electrostatic chuck with ceramic monolithic body |
US11640918B2 (en) | 2020-02-12 | 2023-05-02 | Tokyo Electron Limited | Stage device, power supply mechanism, and processing apparatus |
KR20210102846A (ko) | 2020-02-12 | 2021-08-20 | 도쿄엘렉트론가부시키가이샤 | 스테이지 장치, 급전 기구, 및 처리 장치 |
JP7426842B2 (ja) | 2020-02-12 | 2024-02-02 | 東京エレクトロン株式会社 | ステージ装置、給電機構、および処理装置 |
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KR101791302B1 (ko) | 2017-10-27 |
US20150349668A1 (en) | 2015-12-03 |
JP6358856B2 (ja) | 2018-07-18 |
TWI659497B (zh) | 2019-05-11 |
KR20150138015A (ko) | 2015-12-09 |
SG10201504222SA (en) | 2015-12-30 |
TW201611178A (zh) | 2016-03-16 |
US9787222B2 (en) | 2017-10-10 |
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