JP7151368B2 - 酸化処理モジュール、基板処理システム及び酸化処理方法 - Google Patents
酸化処理モジュール、基板処理システム及び酸化処理方法 Download PDFInfo
- Publication number
- JP7151368B2 JP7151368B2 JP2018197824A JP2018197824A JP7151368B2 JP 7151368 B2 JP7151368 B2 JP 7151368B2 JP 2018197824 A JP2018197824 A JP 2018197824A JP 2018197824 A JP2018197824 A JP 2018197824A JP 7151368 B2 JP7151368 B2 JP 7151368B2
- Authority
- JP
- Japan
- Prior art keywords
- stage
- wafer
- substrate
- module
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003647 oxidation Effects 0.000 title claims description 67
- 238000007254 oxidation reaction Methods 0.000 title claims description 67
- 239000000758 substrate Substances 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 24
- 238000012545 processing Methods 0.000 claims description 66
- 230000001590 oxidative effect Effects 0.000 claims description 34
- 238000012546 transfer Methods 0.000 claims description 34
- 238000001816 cooling Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 230000007246 mechanism Effects 0.000 claims description 24
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 235000012431 wafers Nutrition 0.000 description 112
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 41
- 229910001882 dioxygen Inorganic materials 0.000 description 41
- 239000007789 gas Substances 0.000 description 40
- 239000011777 magnesium Substances 0.000 description 39
- 230000008569 process Effects 0.000 description 18
- 238000009826 distribution Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000010949 copper Substances 0.000 description 6
- 230000005291 magnetic effect Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
前記ステージを冷却することにより、当該ステージに載置された基板を
25℃以下の温度に冷却する冷却機構と、
前記ステージの上面と対向する位置に配置される対向面と、前記ステージの上面との隙間に向けて、前記金属膜を酸化させるための酸化ガスを供給する酸化ガス供給部とを備えたヘッド部と、
前記ステージの上面と交差する回転軸周りに、前記ヘッド部を回転させるための回転駆動部とを備え、
前記冷却機構は、熱を奪う低温部を有する冷凍機と、前記ステージと低温部との間に介設され、熱伝導により前記ステージの冷却を行う熱伝導部材とを備え、前記熱伝導部材は、前記ステージを下面側から支持する支持部である、酸化処理モジュールである。
基板処理システム1は、ロードポート11、ローダモジュール12、ロードロックモジュール131、132、トランスファーモジュール14、及び複数の処理モジュール15を備えている。なお図1に示す基板処理システム1において、処理モジュール15の設置数は8台であるが、必要に応じて、適宜、増減することができる。
トランスファーモジュール14は、真空雰囲気下にてウエハWの搬送をする装置である。トランスファーモジュール14には、既述のロードロックモジュール131、132、及び複数の処理モジュール15が接続されている。トランスファーモジュール14は、その内部に設けられた搬送アーム141を用いて、ロードロックモジュール131、132や各処理モジュール15の間でウエハWの搬送を行う。
以下、複数の処理モジュール15のうち、スパッタリングによる金属膜(下記の例ではマグネシウム(Mg))の成膜を行うことが可能な成膜モジュール2と、成膜モジュール2にて成膜された金属膜を25℃以下の温度に冷却しつつ酸化処理を行うことが可能な酸化処理モジュール3とに着目して説明を行う。
さらにこのステージ22内には図示しないヒータが組み込まれており、スパッタリング時にウエハWを25~400℃の範囲内の温度に加熱することができる。
このため、上述の温度範囲よりも低温である25℃以下の温度にてMg膜の酸化処理を行うことが必要となる場合がある。
そこで本例の基板処理システム1は、ウエハWを25℃以下の温度に冷却した条件下でMg膜(金属膜)の酸化処理を実施する酸化処理モジュール3を備えている。以下、図3を参照しながら酸化処理モジュール3の構成について説明する。
一方、図3に示すように、真空容器31の底部には排気路371が接続され、排気路371は圧力調節部372を介して真空排気装置373に接続されている。圧力調節部372、真空排気装置373は、真空容器31内を1.0×10-5~1.0Paの範囲内(高真空~中真空の範囲に相当)の真空雰囲気に調節する圧力調節機構として構成されている。
また、ステージ32には、熱伝達用のヘリウム(He)ガスなどをウエハWの裏面に供給する不図示のガス供給ラインが設けられている。
冷凍機33、及び熱伝導部材324は、本例の冷却機構を構成している。また、本例の熱伝導部材324は、ステージ32を下面側から支持する支持部を構成している。
そこで本例の酸化処理モジュール3においては、ステージ32のウエハWと対向する位置に、酸化ガスの供給を行うヘッド部34を設け、当該ヘッド部34をウエハWに対して相対的に回転させる構成となっている。
図3、図4(a)に示すように、ヘッド部34の上面側の中央位置には、当該ヘッド部34に向けて酸化ガスである酸素ガスを供給すると共に、ヘッド部34を吊り下げ支持する回転管部351が接続されている。
はじめに、ロードポート11に搬送容器Fが載置されると、ローダモジュール12に設けられた不図示の開閉機構により搬送容器Fの蓋が取り外される。しかる後、搬送アーム121によって処理対象のウエハWが取り出され、オリエンタ122によって向きを調節された後、いずれかのロードロックモジュール131、132に搬入される。
昇降ピン23を介して搬送アーム141からステージ22にウエハWが受け渡されたら、真空容器21から搬送アーム141を退避させ、ゲートバルブ142を閉じる。しかる後、Arガス供給路27から真空容器21内にArガスを供給すると共に、真空排気装置293により真空容器21内の真空排気を行う。このとき圧力調節部292により、真空容器21内は、例えば1.0×10-2~1.0Paの範囲内の真空雰囲気に調節される。
例えば25~400℃の範囲内の温度にウエハWを加熱して酸化処理を行う場合には、引き続き成膜モジュール2内にて酸化処理を行う。
さらに成膜モジュール2内では、スパッタリングによるMg膜の成膜と、ヘッド部281を用いたMg膜の酸化処理とを交互に、複数回実施してもよい。
即ち、搬入時とは反対の手順で、Mg膜が形成されたウエハWを搬送アーム141に受け渡し、成膜モジュール2からウエハWを搬出する。
また、ステージ32上のウエハWと対向する位置に配置されたヘッド部34を例えば1~120rpmの範囲内の回転速度で回転させる。ヘッド部34の回転速度は、酸化処理の期間中、少なくともヘッド部34が1回転するように設定される。
スパッタリングによるMg膜の成膜とウエハWを冷却した条件下での酸化処理とを交互に、複数回実施する場合には、成膜モジュール2と酸化処理モジュール3との間でウエハWを繰り返し搬送し、これらの処理を実施する。
そして、多層膜の形成が完了したウエハWは、ロードロックモジュール131、132を介してローダモジュール12へと搬出され、元の搬送容器Fへと戻される
これとは反対に、例えばヘッド部34の中央部の1箇所に吐出孔342を設ける構成を否定するものでもない。
さらにまた、円板形状のヘッド部34の中央からずれた位置に回転管部351を接続し、偏心した位置にてウエハWを回転させてもよい。
この他、ウエハWの冷却を行う冷却機構の構成は、既述の冷凍機33例に限定されるものではない。例えば、ステージ32に冷媒の通流路を設け、外部で冷却された冷媒を通流させてウエハWの冷却を行ってもよい。
図3、図4を用いて説明した構成の酸化処理モジュール3に基づき、ウエハWとヘッド部34の下面との間のシミュレーションモデルを作成し、ウエハWの表面における酸素ガスの流れを計算した。
A.シミュレーション条件
流体解析ソフトを用い、ヘッド部34を十分に回転させて酸素ガスを供給した場合のウエハWとヘッド部34の空間の圧力分布を計算した。ウエハWの直径は300mmであり、ヘッド部34には直径数mmの吐出孔342を1列に数十個設けた。
(実施例1)周囲(真空容器31内)の圧力を中真空として、100%の濃度の酸素ガスを1000sccmの流量で供給した場合のウエハW面内の酸素ガスの圧力分布を計算した。
(実施例2)酸素ガスの流量を100sccmとした点以外は、実際例1と同じ条件で酸素ガスの圧力分布を計算した。
(実施例3)周囲(真空容器31内)の圧力を高真空として、酸素ガスを1sccmの流量で供給した場合のウエハW面内の酸素ガスの圧力分布を計算した。
実施例1~3の圧力分布をウエハWの面内に表示した結果を図5(a)~(c)に示し、半径方向の圧力分布をグラフ表示した結果を図6(a)~(c)に示す。図6の各図の横軸は、ウエハWの半径方向の位置を示し、縦軸は酸素ガスの圧力(規格化された相対値)を示している。
上記の計算結果において、ウエハWの表面に形成される酸素ガスの圧力分布の標準偏差である1σを算出した。その結果、実施例1では1σ=1.9%、実施例2では1σ=1.8%、実施例3では1σ=0.7%となり、圧力分布のバラツキを抑制することができることがわかる。
図2の成膜モジュール2、図3の酸化処理モジュール3を含む基板処理システム1を用いて製造した磁気トンネル抵抗素子のウエハW面内における物性分布を測定した。
A.実験条件
(実施例4)抵抗素子を評価する物性として、抵抗面積積(RA:Resistance Area product)、磁気抵抗比(MR:MagnetoResistance)を測定し、各物性値の面内分布を評価した。
実施例4におけるRA値の面内分布を図7に示し、MR値の面内分布を図8に示す。図7、図8においても、実際の物性値に応じて異なる色彩が割り当てられたカラー図面となっているが、図示の制約上、ここではグレースケールパターンで示してある。
1 基板処理システム
2 成膜モジュール
3 酸化処理モジュール
321 冷却ヘッド
33 冷凍機
34 ヘッド部
4 制御部
Claims (10)
- 金属膜の形成された基板が載置されるステージと、
前記ステージを冷却することにより、当該ステージに載置された基板を
25℃以下の温度に冷却する冷却機構と、
前記ステージの上面と対向する位置に配置される対向面と、前記ステージの上面との隙間に向けて、前記金属膜を酸化させるための酸化ガスを供給する酸化ガス供給部とを備えたヘッド部と、
前記ステージの上面と交差する回転軸周りに、前記ヘッド部を回転させるための回転駆動部とを備え、
前記冷却機構は、熱を奪う低温部を有する冷凍機と、前記ステージと低温部との間に介設され、熱伝導により前記ステージの冷却を行う熱伝導部材とを備え、前記熱伝導部材は、前記ステージを下面側から支持する支持部である、酸化処理モジュール。 - 前記酸化ガス供給部には、前記ヘッド部の回転に伴い、前記ステージに載置された基板の全面を走査しながら酸化ガスを供給する位置に設けられたガス吐出孔を備えている、請求項1に記載の酸化処理モジュール。
- 前記ステージには、前記基板を固定するための静電チャックを構成する電極が内設されている、請求項1または2に記載の酸化処理モジュール。
- 前記ステージには、基板の温度調節を行うためのヒータが内設されている、請求項1ないし3のいずれか一つに記載の酸化処理モジュール。
- 前記ステージは、内圧を1.0×10 -5 ~1.0Paの範囲内の真空雰囲気に調節する圧力調節機構を備えた処理容器内に設けられている、請求項1ないし4のいずれか一つに記載の酸化処理モジュール。
- 基板搬送容器に対して、大気圧雰囲気下で処理対象の基板の搬入出が行われるロードポートと、
真空雰囲気下で基板の搬送が行われるトランスファーモジュールと、
前記ロードポートとトランスファーモジュールとの間に設けられ、基板が搬送される雰囲気を大気圧雰囲気と真空雰囲気との間で切り替えるロードックモジュールと、
ゲートバルブを介して前記トランスファーモジュールに接続され、基板に対してスパッタリングにより前記金属膜の成膜を行う成膜モジュールと、
ゲートバルブを介して前記トランスファーモジュールと接続された請求項1ないし5のいずれか一つに記載の酸化処理モジュールとを備えた、基板処理システム。 - 前記トランスファーモジュールには、複数の成膜モジュールが接続されている、請求項6に記載の基板処理システム。
- 金属膜の形成された基板をステージに載置する工程と、
熱を奪う低温部を有する冷凍機と、前記ステージと低温部との間に介設され、熱伝導により前記ステージを冷却すると共に、前記ステージを下面側から支持する支持部として構成された熱伝導部材と、を備える冷却機構を用いて前記ステージを冷却することにより、当該ステージに載置された基板を25℃以下の温度に冷却する工程と、
次いで、前記ステージの上面と対向する位置に配置される対向面と、酸化ガスを供給する酸化ガス供給部とを備えたヘッド部を用い、前記ステージの上面と交差する回転軸周りに前記ヘッド部を回転させながら、前記ステージの上面と対向面との隙間に前記酸化ガスを供給して前記金属膜を酸化させる工程と、を含む、酸化処理方法。 - 前記金属膜を酸化させる工程は、1.0×10 -5 ~1.0Paの範囲内の真空雰囲気下で行われる、請求項8に記載の酸化処理方法。
- 前記ステージに載置される前の基板に対し、スパッタリングにより前記金属膜を成膜する工程を含む、請求項8または9に記載の酸化処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018197824A JP7151368B2 (ja) | 2018-10-19 | 2018-10-19 | 酸化処理モジュール、基板処理システム及び酸化処理方法 |
US16/653,944 US20200123649A1 (en) | 2018-10-19 | 2019-10-15 | Oxidation processing module, substrate processing system, and oxidation processing method |
KR1020190129292A KR102304166B1 (ko) | 2018-10-19 | 2019-10-17 | 산화 처리 모듈, 기판 처리 시스템 및 산화 처리 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018197824A JP7151368B2 (ja) | 2018-10-19 | 2018-10-19 | 酸化処理モジュール、基板処理システム及び酸化処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020065031A JP2020065031A (ja) | 2020-04-23 |
JP7151368B2 true JP7151368B2 (ja) | 2022-10-12 |
Family
ID=70280418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018197824A Active JP7151368B2 (ja) | 2018-10-19 | 2018-10-19 | 酸化処理モジュール、基板処理システム及び酸化処理方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20200123649A1 (ja) |
JP (1) | JP7151368B2 (ja) |
KR (1) | KR102304166B1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114744072A (zh) * | 2021-01-07 | 2022-07-12 | 徐州中辉光伏科技有限公司 | 一种单晶硅电池片扩散提效及扩散后处理氧化工艺 |
US20240130082A1 (en) * | 2022-10-12 | 2024-04-18 | Applied Materials, Inc. | Methods and apparatus for cooling a substrate support |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007298506A (ja) | 2006-04-06 | 2007-11-15 | National Institute Of Advanced Industrial & Technology | 試料冷却装置 |
WO2016158865A1 (ja) | 2015-03-31 | 2016-10-06 | Tdk株式会社 | 磁気抵抗効果素子 |
JP2017216351A (ja) | 2016-05-31 | 2017-12-07 | 東京エレクトロン株式会社 | 磁気抵抗素子の製造方法及び磁気抵抗素子の製造システム |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3184666B2 (ja) * | 1993-06-01 | 2001-07-09 | 東京エレクトロン株式会社 | プラズマ装置の運転方法 |
KR100260587B1 (ko) * | 1993-06-01 | 2000-08-01 | 히가시 데쓰로 | 정전척 및 그의 제조방법 |
JP3257356B2 (ja) * | 1995-07-19 | 2002-02-18 | 富士通株式会社 | 気相成長装置及び気相成長方法並びに気相成長装置のクリーニング方法 |
JP2005093733A (ja) * | 2003-09-17 | 2005-04-07 | Ebara Corp | 基板処理装置 |
JP4533926B2 (ja) * | 2007-12-26 | 2010-09-01 | 財団法人高知県産業振興センター | 成膜装置及び成膜方法 |
KR101989366B1 (ko) * | 2012-07-04 | 2019-06-14 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 |
WO2015064194A1 (ja) | 2013-10-30 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP6358856B2 (ja) * | 2014-05-29 | 2018-07-18 | 東京エレクトロン株式会社 | 静電吸着装置及び冷却処理装置 |
-
2018
- 2018-10-19 JP JP2018197824A patent/JP7151368B2/ja active Active
-
2019
- 2019-10-15 US US16/653,944 patent/US20200123649A1/en not_active Abandoned
- 2019-10-17 KR KR1020190129292A patent/KR102304166B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007298506A (ja) | 2006-04-06 | 2007-11-15 | National Institute Of Advanced Industrial & Technology | 試料冷却装置 |
WO2016158865A1 (ja) | 2015-03-31 | 2016-10-06 | Tdk株式会社 | 磁気抵抗効果素子 |
JP2017216351A (ja) | 2016-05-31 | 2017-12-07 | 東京エレクトロン株式会社 | 磁気抵抗素子の製造方法及び磁気抵抗素子の製造システム |
Also Published As
Publication number | Publication date |
---|---|
US20200123649A1 (en) | 2020-04-23 |
KR20200045414A (ko) | 2020-05-04 |
KR102304166B1 (ko) | 2021-09-23 |
JP2020065031A (ja) | 2020-04-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9790590B2 (en) | Vacuum-processing apparatus, vacuum-processing method, and storage medium | |
US10468237B2 (en) | Substrate processing apparatus | |
US9905441B2 (en) | Oxidation process apparatus, oxidation method, and method for manufacturing electronic device | |
US20100000855A1 (en) | Film Forming Apparatus and Method of Forming Film | |
TWI514500B (zh) | A device for manufacturing a magnetoresistive element | |
US20130287529A1 (en) | Method and apparatus for independent wafer handling | |
JP7151368B2 (ja) | 酸化処理モジュール、基板処理システム及び酸化処理方法 | |
US20200093027A1 (en) | Substrate placement mechanism, film forming apparatus, and film forming method | |
US11251027B2 (en) | Stage device and processing apparatus | |
US20170327941A1 (en) | Sputtering apparatus and method of forming a layer using the same | |
JP5624931B2 (ja) | スピネルフェライト薄膜の製造方法 | |
US20220341028A1 (en) | Vacuum processing apparatus | |
JP2023032920A (ja) | 真空処理装置及び基板処理方法 | |
US20220270866A1 (en) | Apparatus for performing sputtering process and method thereof | |
US20220220606A1 (en) | Method and device for substrate processing | |
WO2015072139A1 (ja) | 磁気抵抗効果素子の製造方法 | |
TW202418400A (zh) | 磁性退火設備及方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210602 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220324 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220405 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220601 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220830 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220912 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7151368 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |