JP2015219290A5 - - Google Patents
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- Publication number
- JP2015219290A5 JP2015219290A5 JP2014100942A JP2014100942A JP2015219290A5 JP 2015219290 A5 JP2015219290 A5 JP 2015219290A5 JP 2014100942 A JP2014100942 A JP 2014100942A JP 2014100942 A JP2014100942 A JP 2014100942A JP 2015219290 A5 JP2015219290 A5 JP 2015219290A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- optical film
- film
- pattern
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims description 300
- 230000003287 optical Effects 0.000 claims description 212
- 239000010409 thin film Substances 0.000 claims description 173
- 238000005530 etching Methods 0.000 claims description 139
- 238000004519 manufacturing process Methods 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 83
- 238000007689 inspection Methods 0.000 claims description 55
- 238000005259 measurement Methods 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 28
- 238000002834 transmittance Methods 0.000 claims description 26
- 238000001039 wet etching Methods 0.000 claims description 17
- 230000001678 irradiating Effects 0.000 claims description 8
- 238000010586 diagram Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 17
- 239000011651 chromium Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 7
- 150000001247 metal acetylides Chemical class 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000000875 corresponding Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 238000004513 sizing Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- XMPZTFVPEKAKFH-UHFFFAOYSA-P Ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- -1 for example Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052904 quartz Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 240000004282 Grewia occidentalis Species 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001809 detectable Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014100942A JP6298354B2 (ja) | 2014-05-14 | 2014-05-14 | フォトマスクの製造方法及びフォトマスク基板 |
| TW104109043A TWI572976B (zh) | 2014-05-14 | 2015-03-20 | 光罩之製造方法及光罩基板 |
| KR1020150047535A KR101706844B1 (ko) | 2014-05-14 | 2015-04-03 | 포토마스크의 제조 방법 및 포토마스크 기판 |
| CN201510184218.1A CN105093819B (zh) | 2014-05-14 | 2015-04-17 | 光掩模的制造方法以及光掩模基板 |
| KR1020170002311A KR101898796B1 (ko) | 2014-05-14 | 2017-01-06 | 포토마스크의 제조 방법 및 포토마스크 기판 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014100942A JP6298354B2 (ja) | 2014-05-14 | 2014-05-14 | フォトマスクの製造方法及びフォトマスク基板 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017233507A Division JP6500076B2 (ja) | 2017-12-05 | 2017-12-05 | フォトマスクの製造方法及びフォトマスク基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015219290A JP2015219290A (ja) | 2015-12-07 |
| JP2015219290A5 true JP2015219290A5 (zh) | 2016-06-02 |
| JP6298354B2 JP6298354B2 (ja) | 2018-03-20 |
Family
ID=54574567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014100942A Active JP6298354B2 (ja) | 2014-05-14 | 2014-05-14 | フォトマスクの製造方法及びフォトマスク基板 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6298354B2 (zh) |
| KR (2) | KR101706844B1 (zh) |
| CN (1) | CN105093819B (zh) |
| TW (1) | TWI572976B (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6803172B2 (ja) * | 2016-08-19 | 2020-12-23 | 株式会社エスケーエレクトロニクス | フォトマスクブランクス、それを用いたフォトマスクおよびフォトマスクの製造方法 |
| TW201823855A (zh) * | 2016-09-21 | 2018-07-01 | 日商Ｈｏｙａ股份有限公司 | 光罩之製造方法、光罩、及顯示裝置之製造方法 |
| KR102223816B1 (ko) | 2018-11-13 | 2021-03-05 | 정문성 | 쉐도우 마스크의 제조방법 및 이 제조방법에 의해 제조된 쉐도우 마스크 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60118839A (ja) * | 1983-11-30 | 1985-06-26 | Hoya Corp | フォトマスクの製造方法 |
| JPS60118839U (ja) * | 1984-01-19 | 1985-08-10 | 星電器製造株式会社 | キ−スイツチ |
| JP3485071B2 (ja) | 1990-12-26 | 2004-01-13 | 株式会社ニコン | フォトマスク及び製造方法 |
| KR100280035B1 (ko) * | 1992-11-27 | 2001-03-02 | 기타지마 요시토시 | 위상쉬프트 포토마스크 |
| JPH08106152A (ja) * | 1994-10-06 | 1996-04-23 | Fujitsu Ltd | フォトマスク及びその作製方法 |
| JP3037941B2 (ja) * | 1997-12-19 | 2000-05-08 | ホーヤ株式会社 | ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク |
| JPH11271958A (ja) * | 1998-02-06 | 1999-10-08 | Internatl Business Mach Corp <Ibm> | 高解像フォトマスクおよびその製造方法 |
| JP2001203424A (ja) * | 2000-01-18 | 2001-07-27 | Sharp Corp | 半導体素子の製造方法 |
| TW502132B (en) * | 2000-08-30 | 2002-09-11 | Toshiba Corp | Method for producing photomask |
| US6894774B2 (en) * | 2001-08-10 | 2005-05-17 | Hoya Corporation | Method of defect inspection of graytone mask and apparatus doing the same |
| WO2003085709A1 (en) * | 2002-04-11 | 2003-10-16 | Hoya Corporation | Reflection type mask blank and reflection type mask and production methods for them |
| JP4509050B2 (ja) * | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
| JP5105407B2 (ja) * | 2007-03-30 | 2012-12-26 | Ｈｏｙａ株式会社 | フォトマスクブランク、フォトマスク及びフォトマスクの製造方法 |
| JP2010169750A (ja) * | 2009-01-20 | 2010-08-05 | Hoya Corp | フォトマスクの製造方法、及び表示デバイスの製造方法 |
| JP2010169749A (ja) * | 2009-01-20 | 2010-08-05 | Hoya Corp | フォトマスクの製造方法、表示デバイスの製造方法、及びフォトマスク基板処理装置 |
| EP2600388B1 (en) * | 2010-07-27 | 2014-10-08 | Asahi Glass Company, Limited | Substrate provided with reflecting layer for euv lithography, and reflective mask blank for euv lithography |
| JP5900773B2 (ja) * | 2010-11-05 | 2016-04-06 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
| KR101032705B1 (ko) * | 2010-11-16 | 2011-06-02 | 주식회사 에스앤에스텍 | 마스크 블랭크, 마스크 블랭크의 제조 방법 및 포토마스크 |
| JP2011186506A (ja) * | 2011-07-01 | 2011-09-22 | Sk Electronics:Kk | 中間調フォトマスク |
| KR101172698B1 (ko) * | 2011-10-17 | 2012-09-13 | 주식회사 에스앤에스텍 | 블랭크 마스크, 포토마스크 및 그의 제조방법 |
| JP6081716B2 (ja) * | 2012-05-02 | 2017-02-15 | Hoya株式会社 | フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法 |
-
2014
- 2014-05-14 JP JP2014100942A patent/JP6298354B2/ja active Active
-
2015
- 2015-03-20 TW TW104109043A patent/TWI572976B/zh active
- 2015-04-03 KR KR1020150047535A patent/KR101706844B1/ko active IP Right Grant
- 2015-04-17 CN CN201510184218.1A patent/CN105093819B/zh active Active
-
2017
- 2017-01-06 KR KR1020170002311A patent/KR101898796B1/ko active IP Right Grant
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