JP2015214460A5 - - Google Patents

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Publication number
JP2015214460A5
JP2015214460A5 JP2014098976A JP2014098976A JP2015214460A5 JP 2015214460 A5 JP2015214460 A5 JP 2015214460A5 JP 2014098976 A JP2014098976 A JP 2014098976A JP 2014098976 A JP2014098976 A JP 2014098976A JP 2015214460 A5 JP2015214460 A5 JP 2015214460A5
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JP
Japan
Prior art keywords
rotational speed
oxygen concentration
interstitial oxygen
controlling
increased
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JP2014098976A
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English (en)
Japanese (ja)
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JP6070626B2 (ja
JP2015214460A (ja
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Priority claimed from JP2014098976A external-priority patent/JP6070626B2/ja
Priority to JP2014098976A priority Critical patent/JP6070626B2/ja
Priority to KR1020167031305A priority patent/KR102105366B1/ko
Priority to CN201580027054.XA priority patent/CN106460227B/zh
Priority to US15/305,119 priority patent/US9988736B2/en
Priority to DE112015001883.2T priority patent/DE112015001883B4/de
Priority to PCT/JP2015/001319 priority patent/WO2015173998A1/ja
Publication of JP2015214460A publication Critical patent/JP2015214460A/ja
Publication of JP2015214460A5 publication Critical patent/JP2015214460A5/ja
Publication of JP6070626B2 publication Critical patent/JP6070626B2/ja
Application granted granted Critical
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JP2014098976A 2014-05-12 2014-05-12 シリコン単結晶の育成方法 Active JP6070626B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014098976A JP6070626B2 (ja) 2014-05-12 2014-05-12 シリコン単結晶の育成方法
DE112015001883.2T DE112015001883B4 (de) 2014-05-12 2015-03-11 Verfahren zum Wachsenlassen eines Silizium-Einkristalls
CN201580027054.XA CN106460227B (zh) 2014-05-12 2015-03-11 单晶硅的生长方法
US15/305,119 US9988736B2 (en) 2014-05-12 2015-03-11 Method for growing a silicon single crystal while suppressing a generation of slip dislocations in a tail portion
KR1020167031305A KR102105366B1 (ko) 2014-05-12 2015-03-11 실리콘 단결정의 육성방법
PCT/JP2015/001319 WO2015173998A1 (ja) 2014-05-12 2015-03-11 シリコン単結晶の育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014098976A JP6070626B2 (ja) 2014-05-12 2014-05-12 シリコン単結晶の育成方法

Publications (3)

Publication Number Publication Date
JP2015214460A JP2015214460A (ja) 2015-12-03
JP2015214460A5 true JP2015214460A5 (enExample) 2016-12-01
JP6070626B2 JP6070626B2 (ja) 2017-02-01

Family

ID=54479556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014098976A Active JP6070626B2 (ja) 2014-05-12 2014-05-12 シリコン単結晶の育成方法

Country Status (6)

Country Link
US (1) US9988736B2 (enExample)
JP (1) JP6070626B2 (enExample)
KR (1) KR102105366B1 (enExample)
CN (1) CN106460227B (enExample)
DE (1) DE112015001883B4 (enExample)
WO (1) WO2015173998A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3940124B1 (de) * 2020-07-14 2024-01-03 Siltronic AG Kristallstück aus monokristallinem silizium
KR102808187B1 (ko) * 2021-11-29 2025-05-19 한국전자통신연구원 상이한 네트워크 로봇 컴포넌트들 간의 통신 구성 장치 및 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153A (en) 1849-03-10 Loom eoe weaving brussels carpets
US9A (en) 1836-08-10 Thomas Blanchard Method of riveting plank or made blocks
EP0947611A3 (en) 1998-03-17 2002-03-20 Shin-Etsu Handotai Company Limited A method for producing a silicon single crystal and the silicon single crystal produced thereby
JPH11268991A (ja) * 1998-03-24 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法およびシリコン単結晶
JP3473477B2 (ja) 1998-04-07 2003-12-02 信越半導体株式会社 シリコン単結晶の製造方法
JP4791073B2 (ja) * 2005-04-26 2011-10-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの製造方法
JP2009274916A (ja) * 2008-05-15 2009-11-26 Sumco Corp シリコン単結晶及びその製造方法
JP5088338B2 (ja) * 2009-03-10 2012-12-05 信越半導体株式会社 シリコン単結晶の引き上げ方法
JP2010275137A (ja) * 2009-05-27 2010-12-09 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法

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