SG10201402613PA - Method for controlling the diameter of a single crystal to a set point diameter - Google Patents

Method for controlling the diameter of a single crystal to a set point diameter

Info

Publication number
SG10201402613PA
SG10201402613PA SG10201402613PA SG10201402613PA SG10201402613PA SG 10201402613P A SG10201402613P A SG 10201402613PA SG 10201402613P A SG10201402613P A SG 10201402613PA SG 10201402613P A SG10201402613P A SG 10201402613PA SG 10201402613P A SG10201402613P A SG 10201402613PA
Authority
SG
Singapore
Prior art keywords
diameter
single crystal
meniscus
controlling
set point
Prior art date
Application number
SG10201402613PA
Inventor
Schröck Thomas
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG10201402613PA publication Critical patent/SG10201402613PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

18 Abstract Method for Controlling the Diameter of a Single Crystal to a Set Point Diameter Method for controlling the diameter of a single crystal to a set point diameter during the pulling of the single crystal from a melt, which is contained in a crucible and forms a 10 meniscus a t a phase boundary on the edge of the single crystal, the meniscus having a height which corresponds to the distance between the phase boundary and a level of the surface of the melt outside the meniscus, comprising repeated conduct of the following steps: 15 determination of the diameter of a bright ring on the meniscus; calculation of a diameter of the single crystal while taking into account the diameter of the bright ring and while taking into account the dependency of the diameter of the bright ring on the height of the meniscus and on the diameter of the single 20 crystal itself; and calculation of at least one manipulated variable for controlling the diameter of the single crystal on the basis of the difference between the calculated diameter of the single crystal and the set point diameter of the single crystal. Drawing for : Fig. 3
SG10201402613PA 2013-06-07 2014-05-23 Method for controlling the diameter of a single crystal to a set point diameter SG10201402613PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102013210687.4A DE102013210687B4 (en) 2013-06-07 2013-06-07 Method for controlling the diameter of a single crystal to a nominal diameter

Publications (1)

Publication Number Publication Date
SG10201402613PA true SG10201402613PA (en) 2015-01-29

Family

ID=52004342

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201402613PA SG10201402613PA (en) 2013-06-07 2014-05-23 Method for controlling the diameter of a single crystal to a set point diameter

Country Status (7)

Country Link
US (1) US9340897B2 (en)
JP (1) JP5961661B2 (en)
KR (1) KR101617522B1 (en)
CN (1) CN104233456A (en)
DE (1) DE102013210687B4 (en)
SG (1) SG10201402613PA (en)
TW (1) TWI620837B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107151817A (en) * 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 The growing method of monocrystalline silicon and its monocrystal silicon of preparation
CN107815729A (en) * 2016-09-12 2018-03-20 上海新昇半导体科技有限公司 A kind of single crystal growing furnace
DE102016219605A1 (en) 2016-10-10 2018-04-12 Siltronic Ag A method of pulling a single crystal of semiconductor material from a melt contained in a crucible
KR101874712B1 (en) * 2016-12-07 2018-07-04 에스케이실트론 주식회사 Ingot growth control apparatus and control method thereof
KR101895131B1 (en) * 2016-12-28 2018-10-18 경북대학교 산학협력단 Method of measuring a diameter of ingot in crystal growth furnace
DE102019101991A1 (en) 2019-01-28 2020-07-30 Pva Tepla Ag Method of pulling a cylindrical crystal from a melt
DE102019211609A1 (en) * 2019-08-01 2021-02-04 Siltronic Ag Method for pulling a single crystal of silicon according to the Czochralski method from a melt
CN111020691A (en) * 2019-12-03 2020-04-17 徐州鑫晶半导体科技有限公司 System and control method for drawing crystal bar

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
JPS6321280A (en) 1986-07-10 1988-01-28 Osaka Titanium Seizo Kk Method for controlling diameter of single crystal
JPS63100097A (en) 1986-10-14 1988-05-02 Osaka Titanium Seizo Kk Method for measuring diameter of single crystal
US4857278A (en) * 1987-07-13 1989-08-15 Massachusetts Institute Of Technology Control system for the czochralski process
JPH0196089A (en) 1987-10-07 1989-04-14 Osaka Titanium Co Ltd Method for controlling diameter of single crystal
JP3484758B2 (en) 1994-05-17 2004-01-06 三菱住友シリコン株式会社 Crystal growth apparatus and crystal growth method
US5653799A (en) 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US5656078A (en) * 1995-11-14 1997-08-12 Memc Electronic Materials, Inc. Non-distorting video camera for use with a system for controlling growth of a silicon crystal
JP3377378B2 (en) 1996-09-19 2003-02-17 メルテックス株式会社 Chemical abrasive
US6106612A (en) * 1998-06-04 2000-08-22 Seh America Inc. Level detector and method for detecting a surface level of a material in a container
US6203611B1 (en) 1999-10-19 2001-03-20 Memc Electronic Materials, Inc. Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
EP1252375B1 (en) * 2000-02-01 2003-09-17 MEMC Electronic Materials, Inc. Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
JP4246561B2 (en) * 2003-07-22 2009-04-02 コバレントマテリアル株式会社 Single crystal diameter control method
US20050211157A1 (en) 2004-03-25 2005-09-29 Radkevich Olexy V Process control system for controlling a crystal-growing apparatus
JP4918897B2 (en) * 2007-08-29 2012-04-18 株式会社Ｓｕｍｃｏ Silicon single crystal pulling method
US8012255B2 (en) 2008-07-31 2011-09-06 Sumco Phoenix Corporation Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
DE102009056638B4 (en) 2009-12-02 2013-08-01 Siltronic Ag Method for drawing a single crystal of silicon with a section of constant diameter
CN102758250A (en) * 2012-07-20 2012-10-31 西安理工晶体科技有限公司 Automatic equal diameter controlling method for germanium single crystal straight-pull growth method

Also Published As

Publication number Publication date
KR20140143710A (en) 2014-12-17
DE102013210687A1 (en) 2014-12-11
TWI620837B (en) 2018-04-11
US20140360425A1 (en) 2014-12-11
CN104233456A (en) 2014-12-24
US9340897B2 (en) 2016-05-17
JP2014237580A (en) 2014-12-18
TW201447059A (en) 2014-12-16
KR101617522B1 (en) 2016-05-02
JP5961661B2 (en) 2016-08-02
DE102013210687B4 (en) 2018-12-06

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