SG11201805551RA - Method for determining and regulating a diameter of a single crystal during pulling of the single crystal - Google Patents

Method for determining and regulating a diameter of a single crystal during pulling of the single crystal

Info

Publication number
SG11201805551RA
SG11201805551RA SG11201805551RA SG11201805551RA SG11201805551RA SG 11201805551R A SG11201805551R A SG 11201805551RA SG 11201805551R A SG11201805551R A SG 11201805551RA SG 11201805551R A SG11201805551R A SG 11201805551RA SG 11201805551R A SG11201805551R A SG 11201805551RA
Authority
SG
Singapore
Prior art keywords
single crystal
diameter
determining
regulating
during pulling
Prior art date
Application number
SG11201805551RA
Inventor
Thomas Schröck
Thomas Aubrunner
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11201805551RA publication Critical patent/SG11201805551RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Method for Determining and Regulating a Diameter of a Single Crystal during Pulling of the Single Crystal 5 The invention relates to a method for determining a diameter (d K) of a single crystal (200) during the pulling of the single crystal (200), in particular of an end cone (210) of the single crystal (200), from a melt (230) in a crucible (130) of a device (100) for pulling the single crystal (200), wherein the diameter (d K) of the single crystal (200) at an interface with the melt (230) is determined while taking into account a first lowering 10 rate (v S) of a surface (235) of the melt (230) relative to the crucible (130), a first lifting rate (v K) with which the single crystal (200) is raised relative to the crucible (130), and a conservation of mass. 15 Drawing for the Abstract: Fig.1
SG11201805551RA 2016-02-05 2017-01-24 Method for determining and regulating a diameter of a single crystal during pulling of the single crystal SG11201805551RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016201778.0A DE102016201778A1 (en) 2016-02-05 2016-02-05 Method of determining and controlling a diameter of a single crystal while pulling the single crystal
PCT/EP2017/051446 WO2017133930A1 (en) 2016-02-05 2017-01-24 Method for determining and regulating a diameter of a single crystal during pulling of the single crystal

Publications (1)

Publication Number Publication Date
SG11201805551RA true SG11201805551RA (en) 2018-07-30

Family

ID=57909616

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201805551RA SG11201805551RA (en) 2016-02-05 2017-01-24 Method for determining and regulating a diameter of a single crystal during pulling of the single crystal

Country Status (9)

Country Link
US (1) US10738392B2 (en)
EP (1) EP3411515B1 (en)
JP (1) JP6889170B2 (en)
KR (1) KR102111873B1 (en)
CN (1) CN108699723B (en)
DE (1) DE102016201778A1 (en)
SG (1) SG11201805551RA (en)
TW (1) TWI650449B (en)
WO (1) WO2017133930A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7456182B2 (en) * 2020-02-19 2024-03-27 住友金属鉱山株式会社 Single crystal manufacturing method
US11618971B2 (en) * 2020-09-29 2023-04-04 Sumco Corporation Method and apparatus for manufacturing defect-free monocrystalline silicon crystal
KR102662342B1 (en) * 2021-09-28 2024-04-30 (주)에스테크 Apparatus for controlling ingot growth and method thereof

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0097676A4 (en) * 1982-01-04 1985-11-11 Commw Of Australia Diameter control in czochralski crystal growth.
FR2553793B1 (en) * 1983-10-19 1986-02-14 Crismatec METHOD FOR CONTROLLING A SINGLE CRYSTAL DRAWING MACHINE
JPS6321280A (en) 1986-07-10 1988-01-28 Osaka Titanium Seizo Kk Method for controlling diameter of single crystal
US5269875A (en) * 1989-10-05 1993-12-14 Shin-Etsu Handotai Company, Limited Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
JPH0663824B2 (en) * 1990-04-29 1994-08-22 信越半導体株式会社 Method and apparatus for measuring surface vibration
JPH0785489B2 (en) 1991-02-08 1995-09-13 信越半導体株式会社 Single crystal diameter measurement method
DE4231162C2 (en) 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Process for controlling the melt height during the pulling of single crystals
US5653799A (en) * 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
DE19529485A1 (en) 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Method and device for determining the diameter of a growing single crystal
JPH09221378A (en) * 1996-02-13 1997-08-26 Sharp Corp Apparatus for producing crystal
JP2990661B2 (en) * 1996-09-17 1999-12-13 住友金属工業株式会社 Single crystal growth method
US5961716A (en) * 1997-12-15 1999-10-05 Seh America, Inc. Diameter and melt measurement method used in automatically controlled crystal growth
US6106612A (en) 1998-06-04 2000-08-22 Seh America Inc. Level detector and method for detecting a surface level of a material in a container
JP3528758B2 (en) * 2000-05-31 2004-05-24 三菱住友シリコン株式会社 Single crystal pulling device
JP4785762B2 (en) * 2007-01-30 2011-10-05 コバレントマテリアル株式会社 Single crystal manufacturing method
TWI411709B (en) 2009-03-27 2013-10-11 Sumco Corp Method for controlling diameter of single crystal
CN104064158B (en) * 2014-07-17 2016-05-04 深圳市华星光电技术有限公司 There is the gate driver circuit of self-compensating function

Also Published As

Publication number Publication date
WO2017133930A1 (en) 2017-08-10
KR102111873B1 (en) 2020-05-18
CN108699723B (en) 2021-03-16
KR20180099853A (en) 2018-09-05
TWI650449B (en) 2019-02-11
JP2019503972A (en) 2019-02-14
TW201805491A (en) 2018-02-16
US20180363163A1 (en) 2018-12-20
EP3411515A1 (en) 2018-12-12
DE102016201778A1 (en) 2017-08-10
CN108699723A (en) 2018-10-23
US10738392B2 (en) 2020-08-11
EP3411515B1 (en) 2021-01-13
JP6889170B2 (en) 2021-06-18

Similar Documents

Publication Publication Date Title
SG10201402613PA (en) Method for controlling the diameter of a single crystal to a set point diameter
SA516371696B1 (en) Method for Interpretation of Distributed Temperature Sensors During Wellbore Operations
SG11201805551RA (en) Method for determining and regulating a diameter of a single crystal during pulling of the single crystal
MX2016000715A (en) Method and arrangement for preventing unintended spill of liquid from a vessel.
SA517381365B1 (en) Borehole Shape Characterization
MX2015015306A (en) Method for drilling a tunnel for receiving a sensor in a cooking vessel and vessel obtained from such a method.
PH12017501116B1 (en) Low-pressure casting device and low-pressure casting method
EP3026147A4 (en) Silicon carbide single crystal wafer and method for producing silicon carbide single crystal ingot
WO2017209376A3 (en) Growth apparatus for silicon carbide single crystal ingot, and growth method therefor
SA516380495B1 (en) Apparatus and Method for Continuous Down Hole Sand Screen Fill Removal
SA517390505B1 (en) Czochralski Crucible for Controlling Oxygen and Related Methods
WO2013025024A3 (en) Ingot growing apparatus and method of manufacturing ingot
MX2017011267A (en) Molten metal carrying system and method.
MY184193A (en) Core wire holder and method for producing silicon
MY190476A (en) Steady state fluid flow verification for sample takeoff
EP3190086A4 (en) Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and, polycrystalline silicon rod or polycrystalline silicon ingot
MX2018005111A (en) Ladle lifting device and method for vertically moving a ladle containing molten metal.
WO2016117847A3 (en) Control system and control method for diameter of single crystal ingot
SG11202103680RA (en) Apparatus for pulling a single crystal of semiconductor material by the cz method from a melt and method using the apparatus
FI3997259T3 (en) Method for pulling a single crystal of silicon in accordance with the czochralski method
AU2013349225B2 (en) Hoisting type continuous casting device, hoisting type continuous casting method, and solid interface detection device
ZA202004456B (en) Method and device for stabilizing precursor fibers for the production of carbon fibers
MX2016012843A (en) Fastening method.
EP3176289A4 (en) Quartz glass crucible for single crystal silicon pulling and method for producing same
SG11201902696WA (en) Method for pulling a single crystal of semiconductor material from a melt which is contained in a crucible