SG11202103680RA - Apparatus for pulling a single crystal of semiconductor material by the cz method from a melt and method using the apparatus - Google Patents
Apparatus for pulling a single crystal of semiconductor material by the cz method from a melt and method using the apparatusInfo
- Publication number
- SG11202103680RA SG11202103680RA SG11202103680RA SG11202103680RA SG11202103680RA SG 11202103680R A SG11202103680R A SG 11202103680RA SG 11202103680R A SG11202103680R A SG 11202103680RA SG 11202103680R A SG11202103680R A SG 11202103680RA SG 11202103680R A SG11202103680R A SG 11202103680RA
- Authority
- SG
- Singapore
- Prior art keywords
- melt
- pulling
- single crystal
- semiconductor material
- semiconductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102018217509.8A DE102018217509A1 (en) | 2018-10-12 | 2018-10-12 | Device for pulling a single crystal of semiconductor material according to the CZ method from a melt and method using the device |
| PCT/EP2019/076286 WO2020074285A1 (en) | 2018-10-12 | 2019-09-27 | Device for pulling a single crystal of semiconductor material out of a melt using the cz method, and method using the device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202103680RA true SG11202103680RA (en) | 2021-05-28 |
Family
ID=68084847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202103680RA SG11202103680RA (en) | 2018-10-12 | 2019-09-27 | Apparatus for pulling a single crystal of semiconductor material by the cz method from a melt and method using the apparatus |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US11598020B2 (en) |
| EP (1) | EP3864198B1 (en) |
| JP (1) | JP7167329B2 (en) |
| KR (1) | KR102537117B1 (en) |
| CN (1) | CN112888812A (en) |
| DE (1) | DE102018217509A1 (en) |
| FI (1) | FI3864198T3 (en) |
| SG (1) | SG11202103680RA (en) |
| TW (1) | TWI735962B (en) |
| WO (1) | WO2020074285A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022075061A1 (en) * | 2020-10-07 | 2022-04-14 | 株式会社Sumco | Method for producing single crystals |
| EP4130348A1 (en) | 2021-08-02 | 2023-02-08 | Siltronic AG | Device and method for producing a monocrystalline silicon rod |
| CN113882015A (en) * | 2021-09-29 | 2022-01-04 | 西安奕斯伟材料科技有限公司 | Nitrogen-doped agent feeding device and method and manufacturing system of nitrogen-doped silicon single crystal rod |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4442829A1 (en) * | 1994-12-01 | 1996-06-05 | Wacker Siltronic Halbleitermat | Device and method for producing a single crystal |
| US5919303A (en) * | 1997-10-16 | 1999-07-06 | Memc Electronic Materials, Inc. | Process for preparing a silicon melt from a polysilicon charge |
| JP2001003978A (en) | 1999-06-21 | 2001-01-09 | Bridgestone Corp | Vibration isolating apparatus |
| JP3747696B2 (en) | 1999-07-23 | 2006-02-22 | 株式会社Ｓｕｍｃｏ | Heat shielding member of silicon single crystal pulling device |
| US6482263B1 (en) * | 2000-10-06 | 2002-11-19 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal pulling apparatus |
| US7077905B2 (en) * | 2002-09-13 | 2006-07-18 | Toshiba Ceramics Co., Ltd. | Apparatus for pulling a single crystal |
| JP4193500B2 (en) * | 2002-10-07 | 2008-12-10 | 株式会社Ｓｕｍｃｏ | Silicon single crystal pulling apparatus and pulling method thereof |
| JP4161804B2 (en) | 2003-05-30 | 2008-10-08 | 株式会社Ｓｕｍｃｏ | Heat shielding member of silicon single crystal pulling device |
| JP4349493B2 (en) * | 2005-09-27 | 2009-10-21 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Single crystal silicon pulling apparatus, silicon melt contamination prevention method, and silicon melt contamination prevention apparatus |
| JP4829176B2 (en) * | 2007-06-08 | 2011-12-07 | シルトロニック・ジャパン株式会社 | Single crystal manufacturing method |
| US8545623B2 (en) * | 2009-06-18 | 2013-10-01 | Sumco Phoenix Corporation | Method and apparatus for controlling the growth process of a monocrystalline silicon ingot |
| CN101838843A (en) * | 2010-06-02 | 2010-09-22 | 万关良 | Heat shield for single crystal furnace and single crystal furnace with same |
| JP6477356B2 (en) | 2015-08-21 | 2019-03-06 | 株式会社Sumco | Single crystal manufacturing method and manufacturing apparatus |
| CN108166052A (en) * | 2018-02-13 | 2018-06-15 | 南京晶能半导体科技有限公司 | A kind of graphite guide shell device, taper thermal field and single crystal growing furnace |
-
2018
- 2018-10-12 DE DE102018217509.8A patent/DE102018217509A1/en not_active Withdrawn
-
2019
- 2019-09-27 JP JP2021519866A patent/JP7167329B2/en active Active
- 2019-09-27 KR KR1020217014004A patent/KR102537117B1/en active IP Right Grant
- 2019-09-27 CN CN201980067068.2A patent/CN112888812A/en active Pending
- 2019-09-27 US US17/279,623 patent/US11598020B2/en active Active
- 2019-09-27 SG SG11202103680RA patent/SG11202103680RA/en unknown
- 2019-09-27 EP EP19779481.1A patent/EP3864198B1/en active Active
- 2019-09-27 FI FIEP19779481.1T patent/FI3864198T3/en active
- 2019-09-27 WO PCT/EP2019/076286 patent/WO2020074285A1/en unknown
- 2019-10-02 TW TW108135732A patent/TWI735962B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022504729A (en) | 2022-01-13 |
| EP3864198B1 (en) | 2022-09-07 |
| TWI735962B (en) | 2021-08-11 |
| US20210340690A1 (en) | 2021-11-04 |
| EP3864198A1 (en) | 2021-08-18 |
| FI3864198T3 (en) | 2022-12-15 |
| TW202014563A (en) | 2020-04-16 |
| WO2020074285A1 (en) | 2020-04-16 |
| CN112888812A (en) | 2021-06-01 |
| JP7167329B2 (en) | 2022-11-08 |
| DE102018217509A1 (en) | 2020-04-16 |
| US11598020B2 (en) | 2023-03-07 |
| KR102537117B1 (en) | 2023-05-26 |
| KR20210072073A (en) | 2021-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG11202103680RA (en) | Apparatus for pulling a single crystal of semiconductor material by the cz method from a melt and method using the apparatus | |
| IL272839A (en) | Quartz crystal microbalance sensor for fabrication process monitoring and related method | |
| EP3026147A4 (en) | Silicon carbide single crystal wafer and method for producing silicon carbide single crystal ingot | |
| KR102301658B9 (en) | Apparatus for growing plant and control method of the same | |
| EP3192898A4 (en) | Method for producing silicon carbide crystals and crystal production device | |
| EP3561158A4 (en) | Method for growing single crystal silicon carbide ingot having large diameter | |
| EP3260582A4 (en) | Method for producing silicon carbide single crystal ingot and silicon carbide single crystal ingot | |
| EP3278305A4 (en) | Method and apparatus for increasing the frame rate of a time of flight measurement | |
| EP3800282A4 (en) | Crystal line growing state detection method, apparatus and device for silicon rod | |
| EP3305948A4 (en) | Apparatus for producing single crystal and method for producing single crystal | |
| EP3260581C0 (en) | Method for producing silicon carbide single crystal epitaxial wafer and silicon carbide single crystal epitaxial wafer | |
| SG11202102550VA (en) | Method and apparatus for controlling the temperature of a semiconductor wafer | |
| EP3763853A4 (en) | Production method for silicon carbide single crystal | |
| EP3690085A4 (en) | Method for producing silicon carbide single crystal | |
| GB201816589D0 (en) | Laser method and apparatus for analysing crystals | |
| EP3812488A4 (en) | Device for growing silicon carbide single crystal and method for producing silicon carbide single crystal | |
| FR3042592B1 (en) | METHOD FOR CONTROLLING CRACKING OF MATERIAL AND DEVICE FOR IMPLEMENTING THE SAME | |
| EP3591102C0 (en) | Compound semiconductor and method for producing single crystal of compound semiconductor | |
| GB201909676D0 (en) | Method of manufacture of single crystal synthetic diamond material | |
| SG11202111451WA (en) | Methods for growing a single crystal silicon ingot using continuous czochralski method | |
| EP3805436A4 (en) | Device and method for producing tubular single crystals | |
| EP3176289A4 (en) | Quartz glass crucible for single crystal silicon pulling and method for producing same | |
| EP3767016A4 (en) | Method for producing silicon carbide single crystal | |
| SG11202009582SA (en) | Crushed polycrystalline silicon lumps and method for producing same | |
| PL3666934T3 (en) | Apparatus for producing ingot and method for producing silicon carbide ingot using the apparatus |