SG11202009582SA - Crushed polycrystalline silicon lumps and method for producing same - Google Patents

Crushed polycrystalline silicon lumps and method for producing same

Info

Publication number
SG11202009582SA
SG11202009582SA SG11202009582SA SG11202009582SA SG11202009582SA SG 11202009582S A SG11202009582S A SG 11202009582SA SG 11202009582S A SG11202009582S A SG 11202009582SA SG 11202009582S A SG11202009582S A SG 11202009582SA SG 11202009582S A SG11202009582S A SG 11202009582SA
Authority
SG
Singapore
Prior art keywords
polycrystalline silicon
producing same
silicon lumps
crushed polycrystalline
crushed
Prior art date
Application number
SG11202009582SA
Inventor
Shigeki Nishimura
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=68060135&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11202009582S(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11202009582SA publication Critical patent/SG11202009582SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/0012—Devices for disintegrating materials by collision of these materials against a breaking surface or breaking body and/or by friction between the material particles (also for grain)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/0056—Other disintegrating devices or methods specially adapted for specific materials not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C23/00—Auxiliary methods or auxiliary devices or accessories specially adapted for crushing or disintegrating not provided for in preceding groups or not specially adapted to apparatus covered by a single preceding group
    • B02C23/18—Adding fluid, other than for crushing or disintegrating by fluid energy
    • B02C23/20—Adding fluid, other than for crushing or disintegrating by fluid energy after crushing or disintegrating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C25/00—Control arrangements specially adapted for crushing or disintegrating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Food Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11202009582SA 2018-03-28 2019-03-25 Crushed polycrystalline silicon lumps and method for producing same SG11202009582SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018061666 2018-03-28
PCT/JP2019/012542 WO2019189001A1 (en) 2018-03-28 2019-03-25 Crushed polycrystalline silicon lumps and method for producing same

Publications (1)

Publication Number Publication Date
SG11202009582SA true SG11202009582SA (en) 2020-10-29

Family

ID=68060135

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009582SA SG11202009582SA (en) 2018-03-28 2019-03-25 Crushed polycrystalline silicon lumps and method for producing same

Country Status (9)

Country Link
US (1) US11498840B2 (en)
EP (1) EP3760585B9 (en)
JP (1) JP6636225B1 (en)
KR (1) KR102210411B1 (en)
CN (1) CN111936418B (en)
MY (1) MY193927A (en)
SG (1) SG11202009582SA (en)
TW (1) TWI803604B (en)
WO (1) WO2019189001A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115989192B (en) * 2020-08-27 2024-02-02 株式会社德山 Broken polysilicon block and its manufacturing method
WO2024061466A1 (en) 2022-09-22 2024-03-28 Wacker Chemie Ag Production of silicon particles having a reduced surface metal content

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5188986A (en) * 1991-05-17 1993-02-23 United Microelectronics Corporation Hydrogen peroxide in basic solution to clean polycrystalline silicon after phosphorous diffusion
JPH0621034A (en) 1992-07-02 1994-01-28 Nec Kyushu Ltd Cleaning solution of semiconductor substrate
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
DE19741465A1 (en) * 1997-09-19 1999-03-25 Wacker Chemie Gmbh Polycrystalline silicon
DE102004048948A1 (en) 2004-10-07 2006-04-20 Wacker Chemie Ag Apparatus and method for low-contamination, automatic breakage of silicon breakage
KR100685735B1 (en) * 2005-08-11 2007-02-26 삼성전자주식회사 Composition for removing polysilicon, method of removing polysilicon and method of manufacturing a semiconductor device using the same
DE102006014874A1 (en) 2006-03-30 2007-10-04 Wacker Chemie Ag Roll crusher comprises roller to rotate shaft, where roller consists of bearing roller of steel and of multiple hard metal segments
DE102006035081A1 (en) * 2006-07-28 2008-01-31 Wacker Chemie Ag Method and apparatus for producing classified polycrystalline silicon fracture in high purity
DE102006040486A1 (en) * 2006-08-30 2008-03-13 Wacker Chemie Ag Non-destructive testing of high purity polycrystalline silicon
DE102007039626A1 (en) * 2007-08-22 2009-02-26 Wacker Chemie Ag Method of cleaning polycrystalline silicon
CN101139367A (en) 2007-09-27 2008-03-12 上海交通大学 1,2-disubstituted bis ruthenium face chirality ligand and method for synthesizing same
CN101319367B (en) * 2008-07-03 2012-05-30 华南师范大学 Method for preparing solar energy level polysilicon with high temperature vacuum preprocessing
DE102008040231A1 (en) * 2008-07-07 2008-12-18 Wacker Chemie Ag Polysilicon break, comprises similar structure grown in siemens process, where structure contains pores, splices, fissures, crack and chasms
DE102010039752A1 (en) * 2010-08-25 2012-03-01 Wacker Chemie Ag Polycrystalline silicon and process for its preparation
CN102251242A (en) * 2011-07-05 2011-11-23 国电宁夏太阳能有限公司 Method for cleaning polycrystalline silicon
DE102011089356A1 (en) * 2011-12-21 2013-06-27 Wacker Chemie Ag Polycrystalline silicon piece and method of breaking a silicon body
DE102012200992A1 (en) 2012-01-24 2013-07-25 Wacker Chemie Ag Low-doping polycrystalline silicon piece
DE102012213869A1 (en) * 2012-08-06 2014-02-06 Wacker Chemie Ag Polycrystalline silicon fragments and process for their preparation
JP2015122455A (en) 2013-12-25 2015-07-02 日立金属株式会社 Semiconductor wafer manufacturing method and semiconductor wafer
JP6420777B2 (en) 2014-02-14 2018-11-07 株式会社トクヤマ Apparatus for producing cleaned polycrystalline silicon lump crushed material, and method for producing cleaned polycrystalline silicon lump crushed material using the manufacturing apparatus
JP6433674B2 (en) * 2014-04-07 2018-12-05 株式会社トクヤマ Cleaning method for polycrystalline silicon
JP6403525B2 (en) * 2014-10-01 2018-10-10 信越化学工業株式会社 Surface cleanliness evaluation method and quality assurance method for polycrystalline silicon
CN104409324A (en) * 2014-11-12 2015-03-11 吉林华微电子股份有限公司 Polycrystalline-silicon-phosphor-doping after-treatment cleaning method capable of avoiding contamination
JP2016222470A (en) * 2015-05-27 2016-12-28 信越化学工業株式会社 Polycrystal silicon piece

Also Published As

Publication number Publication date
KR102210411B1 (en) 2021-01-29
MY193927A (en) 2022-11-01
CN111936418B (en) 2021-11-23
US11498840B2 (en) 2022-11-15
JP6636225B1 (en) 2020-01-29
EP3760585A1 (en) 2021-01-06
TWI803604B (en) 2023-06-01
JPWO2019189001A1 (en) 2020-04-30
TW202003935A (en) 2020-01-16
EP3760585A4 (en) 2021-11-24
EP3760585B1 (en) 2024-01-31
EP3760585B9 (en) 2024-04-24
CN111936418A (en) 2020-11-13
WO2019189001A1 (en) 2019-10-03
KR20200127212A (en) 2020-11-10
US20210114884A1 (en) 2021-04-22

Similar Documents

Publication Publication Date Title
EP3106434A4 (en) Device for producing cleaned crushed product of polycrystalline silicon blocks, and method for producing cleaned crushed product of polycrystalline silicon blocks using same
EP3026147A4 (en) Silicon carbide single crystal wafer and method for producing silicon carbide single crystal ingot
SG10201605089XA (en) POLYCRYSTALLINE SiC WAFER PRODUCING METHOD
EP3260582A4 (en) Method for producing silicon carbide single crystal ingot and silicon carbide single crystal ingot
EP3028994A4 (en) Silicon carbide powder and method for producing silicon carbide single crystal
EP3476803A4 (en) Polycrystalline silicon rod and method for producing same
EP3192898A4 (en) Method for producing silicon carbide crystals and crystal production device
EP3276050A4 (en) Method for producing silicon carbide single crystal
EP3152178B8 (en) Method for expanding raw material in the form of sand grains
EP3141525A4 (en) Polycrystalline silicon rod, method for producing polycrystalline silicon rod, and monocrystalline silicon
EP3153468A4 (en) Method for producing polycrystalline silicon rod, polycrystalline silicon rod, and polycrystalline silicon mass
EP3260581A4 (en) Method for producing silicon carbide single crystal epitaxial wafer and silicon carbide single crystal epitaxial wafer
PL3245158T3 (en) Device and method for producing silicon carbide
PL3351520T3 (en) Method for producing diamond polycrystal and, diamond polycrystal
EP3190086A4 (en) Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and, polycrystalline silicon rod or polycrystalline silicon ingot
SG11201708638PA (en) Method for producing fine silicon powder, and method for producing fine silicon nitride powder
IL283121A (en) Method for producing aerogels and aerogels obtained using said method
EP3690085A4 (en) Method for producing silicon carbide single crystal
EP3569573A4 (en) Method for producing polycrystalline silicon
EP3260415A4 (en) Polycrystalline silicon rod, production method therefor, and fz silicon single crystal
SG11202009582SA (en) Crushed polycrystalline silicon lumps and method for producing same
SG11201708416PA (en) Silicon epitaxial wafer and method of producing same
EP3591102C0 (en) Compound semiconductor and method for producing single crystal of compound semiconductor
EP3782917A4 (en) Packaging method for polycrystalline silicon, double-packaging method for polycrystalline silicon, and production method for raw material for monocrystalline silicon
PL3432315T3 (en) Concrete composition and method for producing same