JP2015182158A5 - - Google Patents

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Publication number
JP2015182158A5
JP2015182158A5 JP2014059445A JP2014059445A JP2015182158A5 JP 2015182158 A5 JP2015182158 A5 JP 2015182158A5 JP 2014059445 A JP2014059445 A JP 2014059445A JP 2014059445 A JP2014059445 A JP 2014059445A JP 2015182158 A5 JP2015182158 A5 JP 2015182158A5
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JP
Japan
Prior art keywords
circuit element
upper layer
semiconductor
semiconductor circuit
layer
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JP2014059445A
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English (en)
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JP2015182158A (ja
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Priority to JP2014059445A priority Critical patent/JP2015182158A/ja
Priority claimed from JP2014059445A external-priority patent/JP2015182158A/ja
Priority to US14/660,157 priority patent/US9434607B2/en
Priority to CN201510129061.2A priority patent/CN104944356A/zh
Publication of JP2015182158A publication Critical patent/JP2015182158A/ja
Publication of JP2015182158A5 publication Critical patent/JP2015182158A5/ja
Withdrawn legal-status Critical Current

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Description

このように、蓋部及び半導体回路素子が設けられた半導体基板１０の主面を覆う第１の絶縁層９１を設けることにより、機能素子を収容するキャビティーの上層にも、半導体回路素子の上層と同様に、標準的な半導体ウエハープロセスを用いて配線層を配置できるようになり、ＭＥＭＳデバイスの設計自由度が向上する。

JP2014059445A 2014-03-24 2014-03-24 Ｍｅｍｓデバイス Withdrawn JP2015182158A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014059445A JP2015182158A (ja) 2014-03-24 2014-03-24 Ｍｅｍｓデバイス
US14/660,157 US9434607B2 (en) 2014-03-24 2015-03-17 MEMS device
CN201510129061.2A CN104944356A (zh) 2014-03-24 2015-03-23 微机电系统装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014059445A JP2015182158A (ja) 2014-03-24 2014-03-24 Ｍｅｍｓデバイス

Publications (2)

Publication Number Publication Date
JP2015182158A JP2015182158A (ja) 2015-10-22
JP2015182158A5 true JP2015182158A5 (ja) 2017-03-16

Family

ID=54141419

Family Applications (1)

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JP2014059445A Withdrawn JP2015182158A (ja) 2014-03-24 2014-03-24 Ｍｅｍｓデバイス

Country Status (3)

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US (1) US9434607B2 (ja)
JP (1) JP2015182158A (ja)
CN (1) CN104944356A (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9868628B2 (en) * 2016-03-10 2018-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for CMOS-MEMS thin film encapsulation
US10199424B1 (en) * 2017-07-19 2019-02-05 Meridian Innovation Pte Ltd Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines
US10319680B1 (en) 2018-03-01 2019-06-11 Sandisk Technologies Llc Metal contact via structure surrounded by an air gap and method of making thereof

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963788A (en) * 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US6012336A (en) * 1995-09-06 2000-01-11 Sandia Corporation Capacitance pressure sensor
US5798283A (en) * 1995-09-06 1998-08-25 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
DE10017976A1 (de) * 2000-04-11 2001-10-18 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
JP2006289520A (ja) * 2005-04-06 2006-10-26 Toshiba Corp Ｍｅｍｓ技術を使用した半導体装置
US7417307B2 (en) * 2005-07-29 2008-08-26 Hewlett-Packard Development Company, L.P. System and method for direct-bonding of substrates
JP4988217B2 (ja) * 2006-02-03 2012-08-01 株式会社日立製作所 Ｍｅｍｓ構造体の製造方法
JP2007210083A (ja) * 2006-02-13 2007-08-23 Hitachi Ltd Ｍｅｍｓ素子及びその製造方法
US8148811B2 (en) 2006-08-25 2012-04-03 Semiconductor Components Industries, Llc Semiconductor device and manufacturing method thereof
JP5040021B2 (ja) 2007-08-31 2012-10-03 セイコーインスツル株式会社 気密パッケージ及び気密パッケージの製造方法
CN102449906B (zh) 2010-03-18 2014-10-01 松下电器产业株式会社 Mems元件以及mems元件的制造方法
JP2012096316A (ja) * 2010-11-02 2012-05-24 Seiko Epson Corp 電子装置および電子装置の製造方法
CN102333254B (zh) * 2011-09-13 2013-11-06 华景传感科技（无锡）有限公司 一种与cmos电路纵向集成的mems硅麦克风及其制备方法
WO2013097135A1 (en) * 2011-12-29 2013-07-04 Goertek Inc. A silicon based mems microphone, a system and a package with the same
CN103248994A (zh) * 2012-02-06 2013-08-14 苏州敏芯微电子技术有限公司 集成电路与电容式微硅麦克风单片集成的制作方法及芯片
CN103373698B (zh) * 2012-04-26 2015-09-16 张家港丽恒光微电子科技有限公司 制作mems惯性传感器的方法及mems惯性传感器
JP6314568B2 (ja) * 2014-03-18 2018-04-25 セイコーエプソン株式会社 Ｍｅｍｓデバイス及びその製造方法

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