JP2015167251A - バイパスダイオードの製造方法及びバイパスダイオード - Google Patents
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Abstract
Description
本明細書において記載される発明は、米国エネルギー省により与えられた契約番号第DE−FC36−07GO17043のもとで、政府の支援によりなされた。政府は、本発明において一定の権利を有する。
図9Cを参照し、一実施形態において、太陽電池のためのバイパスダイオードの製造方法はまた、基板904に設けられ、第1導電性領域902の下の基板904の部分を囲むアイソレーショントレンチ914を形成する工程を含む。一実施形態において、製造方法はまた、アイソレーショントレンチ914内、並びに、第1導電性領域902及び第2導電性領域910それぞれの少なくとも一部上に、誘電体層918を形成する工程を含む。図9Eに表されるように、特定の実施形態において、その後のコンタクト部の形成のために、誘電体層918内に開口部が形成される。別の特定の実施形態において、図9Dに表されるように、製造方法は更に、誘電体層918を形成する工程の前に、アイソレーショントレンチ914の底面をエッチングして、規則的又は不規則的にテクスチャ加工したパターン916を付与する工程を含む。
Claims (9)
- 第1導電型の第1活性領域と、平面視で前記第1活性領域と異なる領域に形成された第2導電型の第2活性領域とを備える太陽電池のためのバイパスダイオードであって、
前記太陽電池の基板と、
前記基板上に配置される薄い誘電体層と、
前記薄い誘電体層上に配置された前記第1導電型の第1導電性領域と、
前記第1導電性領域上に配置され、前記第1導電型とは反対の前記第2導電型の第2導電性領域と
を備え,
前記薄い誘電体層の厚さが、5オングストローム以上、50オングストローム以下であり、
前記第1導電性領域及び前記第2導電性領域は、前記第1活性領域及び前記第2活性領域と異なる領域に形成されるバイパスダイオード。 - 前記第2導電性領域は、前記第1導電性領域よりも狭く、前記第1導電性領域の上面が露出している請求項1に記載のバイパスダイオード。
- 前記基板は、N型ドーパント不純物原子でドーピングされ、
前記第1導電型はP型であり、
前記第2導電型はN型であり、
前記第1導電性領域の上面を露出させることは、P型領域を露出させることを含む請求項1または2に記載のバイパスダイオード。 - 前記第2導電性領域は、前記第1導電性領域の最上部内に配置され、かつ、前記第1導電性領域の前記最上部に囲まれるが、前記第1導電性領域の最下部には配置されない請求項1または2に記載のバイパスダイオード。
- 前記基板は、N型ドーパント不純物原子でドーピングされ、
前記第1導電型はP型であり、
前記第2導電型はN型であり、
前記第2導電性領域は、P型領域内に配置され、かつ、前記P型領域に囲まれる請求項1または4に記載のバイパスダイオード。 - 前記基板に配置され、前記第1導電性領域の下の前記基板の部分を囲むアイソレーショントレンチを更に備え、
前記アイソレーショントレンチは、前記第1導電性領域及び前記第2導電性領域上に配置される誘電体層に覆われている請求項1から5の何れか一項に記載のバイパスダイオード。 - 第1導電型の第1活性領域と、平面視で前記第1活性領域と異なる領域に形成された第2導電型の第2活性領域とを備える太陽電池のためのバイパスダイオードの製造方法であって、
前記太陽電池の基板上に、薄い誘電体層を形成する工程と、
前記薄い誘電体層上に、前記第1導電型の第1導電性領域を形成する工程と、
前記第1導電性領域上に、前記第1導電型と反対の前記第2導電型の第2導電性領域を印刷する工程とを備え、
前記第2導電性領域は、前記第1導電性領域の上面が露出した状態を維持するべく、前記第1導電性領域よりも狭く印刷され、
前記薄い誘電体層の厚さが、5オングストローム以上、50オングストローム以下であり、
前記第1導電性領域及び前記第2導電性領域は、前記第1活性領域及び前記第2活性領域と異なる領域に形成されるバイパスダイオードの製造方法。 - 前記基板上に前記薄い誘電体層を形成する工程は、前記第1導電性領域を形成する工程の前に行われ、
前記製造方法は、
前記基板に設けられ、前記第1導電性領域の下の前記基板の部分を囲むアイソレーショントレンチを形成する工程と、
ランダムな又は規則的なテクスチャ化されたパターンを設けるべく、前記アイソレーショントレンチの底面をエッチングする工程と、
前記アイソレーショントレンチ内、並びに、前記第1導電性領域及び前記第2導電性領域それぞれの少なくとも一部分上に誘電体層を形成する工程とを更に備える請求項7に記載のバイパスダイオードの製造方法。 - 前記基板は、N型ドーパント不純物原子でドーピングされ、
前記第1導電型はP型であり、
前記第2導電型はN型である請求項7又は8に記載のバイパスダイオードの製造方法。
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US12/967,976 US8134217B2 (en) | 2010-12-14 | 2010-12-14 | Bypass diode for a solar cell |
US12/967,976 | 2010-12-14 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
US12074240B2 (en) * | 2008-06-12 | 2024-08-27 | Maxeon Solar Pte. Ltd. | Backside contact solar cells with separated polysilicon doped regions |
US8846417B2 (en) * | 2011-08-31 | 2014-09-30 | Alta Devices, Inc. | Device and method for individual finger isolation in an optoelectronic device |
KR101879781B1 (ko) * | 2012-05-11 | 2018-08-16 | 엘지전자 주식회사 | 태양 전지, 불순물층의 형성 방법 및 태양 전지의 제조 방법 |
US9912290B2 (en) * | 2012-06-18 | 2018-03-06 | Sunpower Corporation | High current burn-in of solar cells |
KR101563851B1 (ko) | 2012-10-16 | 2015-10-27 | 솔렉셀, 인크. | 광기전 태양 전지 및 모듈의 모놀리식으로 집적된 바이패스 스위치를 위한 방법 및 시스템 |
US9082925B2 (en) * | 2013-03-13 | 2015-07-14 | Sunpower Corporation | Methods for wet chemistry polishing for improved low viscosity printing in solar cell fabrication |
US9525097B2 (en) * | 2013-03-15 | 2016-12-20 | Nthdegree Technologies Worldwide Inc. | Photovoltaic module having printed PV cells connected in series by printed conductors |
FR3004002B1 (fr) | 2013-03-29 | 2016-09-02 | Soitec Silicon On Insulator | Procede d'assemblage avance de cellule photovoltaique concentree |
US20150179847A1 (en) * | 2013-12-20 | 2015-06-25 | Seung Bum Rim | Built-in bypass diode |
US9425337B2 (en) * | 2014-05-29 | 2016-08-23 | Sunpower Corporation | In-cell bypass diode |
US11355657B2 (en) * | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
CN105428439B (zh) * | 2015-12-29 | 2017-05-10 | 上海大学 | 硅基sis结构旁路二极管和hit太阳电池的器件集成方法 |
US10217880B2 (en) * | 2016-03-30 | 2019-02-26 | Sunpower Corporation | Voltage breakdown device for solar cells |
TWI649893B (zh) * | 2016-08-17 | 2019-02-01 | 位元奈米科技股份有限公司 | 光伏電池光電轉換複合層結構製作方法 |
USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
KR101868566B1 (ko) * | 2016-11-04 | 2018-06-19 | 엘지전자 주식회사 | 태양 전지 |
US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
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USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
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US11631777B2 (en) * | 2019-03-11 | 2023-04-18 | Swift Solar Inc. | Integration of bypass diodes within thin film photovoltaic module interconnects |
JP7278831B2 (ja) * | 2019-03-27 | 2023-05-22 | パナソニックホールディングス株式会社 | 太陽電池セルの製造方法および割断用太陽電池セル |
FR3112427A1 (fr) * | 2020-07-13 | 2022-01-14 | Semco Smartech France | Formation de contacts passivés pour cellules solaires IBC |
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CN116314361A (zh) * | 2023-03-31 | 2023-06-23 | 天合光能股份有限公司 | 太阳电池及太阳电池的制备方法 |
CN118213428A (zh) * | 2024-05-21 | 2024-06-18 | 隆基绿能科技股份有限公司 | 一种背接触电池及其制造方法、光伏组件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0290573A (ja) * | 1987-08-07 | 1990-03-30 | American Cyanamid Co | モノリシツク太陽電池及びバイパス・ダイオード・システム |
JPH04179169A (ja) * | 1990-11-09 | 1992-06-25 | Sharp Corp | バイパスダイオード付太陽電池 |
WO2009151808A1 (en) * | 2008-06-12 | 2009-12-17 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
WO2010135153A2 (en) * | 2009-05-20 | 2010-11-25 | Nanogram Corporation | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57138184A (en) * | 1981-02-20 | 1982-08-26 | Matsushita Electric Ind Co Ltd | Solar cell device |
DK170189B1 (da) * | 1990-05-30 | 1995-06-06 | Yakov Safir | Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf |
JP2573083B2 (ja) * | 1990-06-06 | 1997-01-16 | シャープ株式会社 | バイパスダイオード付太陽電池 |
US5616185A (en) * | 1995-10-10 | 1997-04-01 | Hughes Aircraft Company | Solar cell with integrated bypass diode and method |
JPH10270359A (ja) * | 1997-03-25 | 1998-10-09 | Mitsubishi Electric Corp | 薄膜半導体の製造方法 |
US6103970A (en) * | 1998-08-20 | 2000-08-15 | Tecstar Power Systems, Inc. | Solar cell having a front-mounted bypass diode |
DE19845658C2 (de) * | 1998-10-05 | 2001-11-15 | Daimler Chrysler Ag | Solarzelle mit Bypassdiode |
US6635507B1 (en) | 1999-07-14 | 2003-10-21 | Hughes Electronics Corporation | Monolithic bypass-diode and solar-cell string assembly |
US6313396B1 (en) * | 2000-05-22 | 2001-11-06 | The Boeing Company | Lightweight solar module and method of fabrication |
JP3888860B2 (ja) * | 2000-05-24 | 2007-03-07 | シャープ株式会社 | 太陽電池セルの保護方法 |
JP2003007975A (ja) * | 2001-06-27 | 2003-01-10 | Sony Corp | 半導体装置およびその製造方法 |
US7592536B2 (en) * | 2003-10-02 | 2009-09-22 | The Boeing Company | Solar cell structure with integrated discrete by-pass diode |
JP2005223138A (ja) * | 2004-02-05 | 2005-08-18 | Seiko Epson Corp | シリコン膜の成膜方法及び当該シリコン膜の成膜方法を使用するデバイスの製造方法 |
DE102004044061A1 (de) * | 2004-09-11 | 2006-04-20 | Rwe Space Solar Power Gmbh | Solarzellenanordung sowie Verfahren zum Verschalten eines Solarzellenstrings |
DE102004050269A1 (de) | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
DE102004055225B4 (de) * | 2004-11-16 | 2014-07-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Anordnung mit Solarzelle und integrierter Bypass-Diode |
EP1920468B1 (en) * | 2005-09-01 | 2014-02-26 | Merck Patent GmbH | Photovoltaic cells integrated with bypass diode |
JP4827471B2 (ja) * | 2005-09-09 | 2011-11-30 | シャープ株式会社 | バイパス機能付き太陽電池およびその製造方法 |
US9029685B2 (en) * | 2005-11-18 | 2015-05-12 | The Boeing Company | Monolithic bypass diode and photovoltaic cell with bypass diode formed in back of substrate |
JP4846551B2 (ja) * | 2006-12-18 | 2011-12-28 | シャープ株式会社 | 太陽電池およびその製造方法 |
JP2009253096A (ja) * | 2008-04-08 | 2009-10-29 | Sharp Corp | 太陽電池セルの製造方法および太陽電池モジュールの製造方法ならびに太陽電池モジュール |
DE102008047162A1 (de) * | 2008-09-15 | 2010-03-25 | Institut Für Solarenergieforschung Gmbh | Rückkontaktsolarzelle mit integrierter Bypass-Diode sowie Herstellungsverfahren hierfür |
US20110000528A1 (en) * | 2009-04-28 | 2011-01-06 | Garvan Iii Anthony Nicholas Brady | Avalanche breakdown protection for high current, non-elongate solar cells with electrically conductive substrates |
US20100132759A1 (en) * | 2009-06-12 | 2010-06-03 | Renhe Jia | Cell isolation on photovoltaic modules for hot spot reduction |
KR101301029B1 (ko) * | 2009-10-30 | 2013-08-28 | 엘지전자 주식회사 | 박막 태양전지 모듈 |
US20110265857A1 (en) * | 2010-05-03 | 2011-11-03 | DuPont Apollo Ltd. | Monolithic integration of bypass diodes with a thin film solar module |
-
2010
- 2010-12-14 US US12/967,976 patent/US8134217B2/en active Active
-
2011
- 2011-10-03 EP EP11869509.7A patent/EP2652795A4/en not_active Withdrawn
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-
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-
2015
- 2015-05-14 JP JP2015098877A patent/JP6154848B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0290573A (ja) * | 1987-08-07 | 1990-03-30 | American Cyanamid Co | モノリシツク太陽電池及びバイパス・ダイオード・システム |
JPH04179169A (ja) * | 1990-11-09 | 1992-06-25 | Sharp Corp | バイパスダイオード付太陽電池 |
WO2009151808A1 (en) * | 2008-06-12 | 2009-12-17 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
WO2010135153A2 (en) * | 2009-05-20 | 2010-11-25 | Nanogram Corporation | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
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JP6154848B2 (ja) | 2017-06-28 |
AU2011371275A1 (en) | 2013-05-16 |
KR101889429B1 (ko) | 2018-08-20 |
US8580599B2 (en) | 2013-11-12 |
AU2011371275B2 (en) | 2015-05-28 |
US20120171799A1 (en) | 2012-07-05 |
WO2013058724A3 (en) | 2013-07-18 |
EP2652795A2 (en) | 2013-10-23 |
EP2652795A4 (en) | 2014-11-26 |
US8134217B2 (en) | 2012-03-13 |
JP5752798B2 (ja) | 2015-07-22 |
CN203339177U (zh) | 2013-12-11 |
JP2013543279A (ja) | 2013-11-28 |
WO2013058724A2 (en) | 2013-04-25 |
KR20140010920A (ko) | 2014-01-27 |
US20110284986A1 (en) | 2011-11-24 |
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