JP2015126195A - 波長可変レーザの制御方法 - Google Patents

波長可変レーザの制御方法 Download PDF

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Publication number
JP2015126195A
JP2015126195A JP2013271615A JP2013271615A JP2015126195A JP 2015126195 A JP2015126195 A JP 2015126195A JP 2013271615 A JP2013271615 A JP 2013271615A JP 2013271615 A JP2013271615 A JP 2013271615A JP 2015126195 A JP2015126195 A JP 2015126195A
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JP
Japan
Prior art keywords
wavelength
memory
tunable laser
etalon
driving condition
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Pending
Application number
JP2013271615A
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English (en)
Japanese (ja)
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JP2015126195A5 (enExample
Inventor
充宜 宮田
Mitsuyoshi Miyata
充宜 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Sumitomo Electric Device Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2013271615A priority Critical patent/JP2015126195A/ja
Priority to US14/579,833 priority patent/US9444220B2/en
Publication of JP2015126195A publication Critical patent/JP2015126195A/ja
Publication of JP2015126195A5 publication Critical patent/JP2015126195A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2013271615A 2013-12-27 2013-12-27 波長可変レーザの制御方法 Pending JP2015126195A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013271615A JP2015126195A (ja) 2013-12-27 2013-12-27 波長可変レーザの制御方法
US14/579,833 US9444220B2 (en) 2013-12-27 2014-12-22 Method for controlling wavelength tunable laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013271615A JP2015126195A (ja) 2013-12-27 2013-12-27 波長可変レーザの制御方法

Publications (2)

Publication Number Publication Date
JP2015126195A true JP2015126195A (ja) 2015-07-06
JP2015126195A5 JP2015126195A5 (enExample) 2017-02-16

Family

ID=53482960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013271615A Pending JP2015126195A (ja) 2013-12-27 2013-12-27 波長可変レーザの制御方法

Country Status (2)

Country Link
US (1) US9444220B2 (enExample)
JP (1) JP2015126195A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050284A (ja) * 2013-08-30 2015-03-16 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP6292499B2 (ja) * 2013-08-30 2018-03-14 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
KR101885782B1 (ko) * 2015-09-25 2018-08-08 (주)엠이엘텔레콤 파장가변 광송신기
JP6821901B2 (ja) 2016-07-11 2021-01-27 住友電工デバイス・イノベーション株式会社 波長可変レーザの駆動条件設定方法及び波長可変レーザシステム
JP7207651B2 (ja) * 2018-12-27 2023-01-18 住友電工デバイス・イノベーション株式会社 波長可変レーザ装置の制御方法
JP7488053B2 (ja) * 2020-02-06 2024-05-21 古河電気工業株式会社 レーザ装置およびその制御方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050190803A1 (en) * 2004-03-01 2005-09-01 Siegfried Gronbach Method and apparatus for temperature stabilization of a wavelength of a laser
JP2011054714A (ja) * 2009-09-01 2011-03-17 Fujitsu Optical Components Ltd 波長制御方法および光送信装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4090209B2 (ja) * 2001-03-14 2008-05-28 日本オプネクスト株式会社 光波長安定回路、光送信器および光伝送システム
JP3717438B2 (ja) * 2001-06-07 2005-11-16 古河電気工業株式会社 光モジュール、光送信器及びｗｄｍ光送信装置
JP4084006B2 (ja) * 2001-06-27 2008-04-30 株式会社日立製作所 半導体レーザ制御モジュールとその応用装置
JP4943255B2 (ja) 2007-07-20 2012-05-30 住友電工デバイス・イノベーション株式会社 半導体レーザの制御方法
JP2009182220A (ja) * 2008-01-31 2009-08-13 Opnext Japan Inc 光伝送モジュール、波長モニタ、および波長ずれ検出方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050190803A1 (en) * 2004-03-01 2005-09-01 Siegfried Gronbach Method and apparatus for temperature stabilization of a wavelength of a laser
JP2011054714A (ja) * 2009-09-01 2011-03-17 Fujitsu Optical Components Ltd 波長制御方法および光送信装置

Also Published As

Publication number Publication date
US20150188284A1 (en) 2015-07-02
US9444220B2 (en) 2016-09-13

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