JP2015122540A5 - - Google Patents
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- Publication number
- JP2015122540A5 JP2015122540A5 JP2015051636A JP2015051636A JP2015122540A5 JP 2015122540 A5 JP2015122540 A5 JP 2015122540A5 JP 2015051636 A JP2015051636 A JP 2015051636A JP 2015051636 A JP2015051636 A JP 2015051636A JP 2015122540 A5 JP2015122540 A5 JP 2015122540A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon carbide
- nitrogen
- substrate
- carbide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 93
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 88
- HBMJWWWQQXIZIP-UHFFFAOYSA-N Silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 46
- 229910052757 nitrogen Inorganic materials 0.000 claims description 39
- 239000007789 gas Substances 0.000 description 54
- 238000004519 manufacturing process Methods 0.000 description 31
- 229910003465 moissanite Inorganic materials 0.000 description 31
- 238000000034 method Methods 0.000 description 30
- 150000002830 nitrogen compounds Chemical class 0.000 description 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 125000004429 atoms Chemical group 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 5
- 230000005587 bubbling Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000001294 propane Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- BAVYZALUXZFZLV-UHFFFAOYSA-N methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 3
- 229910052904 quartz Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000003213 activating Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium(0) Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010807 litter Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015051636A JP5896346B2 (ja) | 2015-03-16 | 2015-03-16 | 炭化珪素半導体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015051636A JP5896346B2 (ja) | 2015-03-16 | 2015-03-16 | 炭化珪素半導体 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014089900A Division JP2014166957A (ja) | 2014-04-24 | 2014-04-24 | 炭化珪素半導体およびその製造方法と製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015122540A JP2015122540A (ja) | 2015-07-02 |
| JP2015122540A5 true JP2015122540A5 (zh) | 2015-12-24 |
| JP5896346B2 JP5896346B2 (ja) | 2016-03-30 |
Family
ID=53533848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015051636A Active JP5896346B2 (ja) | 2015-03-16 | 2015-03-16 | 炭化珪素半導体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5896346B2 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115961346A (zh) * | 2022-12-29 | 2023-04-14 | 深圳市重投天科半导体有限公司 | 大尺寸碳化硅外延气体供应装置及供应方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6177700A (ja) * | 1984-09-20 | 1986-04-21 | Nec Corp | ２−６族化合物半導体への窒素ド−ピング方法 |
| JP2749898B2 (ja) * | 1989-08-21 | 1998-05-13 | 昭和電工株式会社 | 半導体ＳｉＣ単結晶の製造法 |
| JPH04111419A (ja) * | 1990-08-31 | 1992-04-13 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体気相成長法および装置 |
| JPH0570295A (ja) * | 1991-03-28 | 1993-03-23 | Tdk Corp | 単結晶炭化珪素の形成方法 |
| JPH0629228A (ja) * | 1992-07-10 | 1994-02-04 | Nec Corp | 結晶成長方法 |
| JPH07131067A (ja) * | 1993-11-08 | 1995-05-19 | Sanyo Electric Co Ltd | 炭化ケイ素ウエハの製造方法及び炭化ケイ素発光ダイオード素子の製造方法 |
| JP3671532B2 (ja) * | 1996-07-19 | 2005-07-13 | 豊田合成株式会社 | 半導体発光素子の製造方法 |
| JP3650727B2 (ja) * | 2000-08-10 | 2005-05-25 | Ｈｏｙａ株式会社 | 炭化珪素製造方法 |
| JP4374786B2 (ja) * | 2001-02-23 | 2009-12-02 | 住友電気工業株式会社 | Ｃｖｄ装置および薄膜製造方法 |
| US6759327B2 (en) * | 2001-10-09 | 2004-07-06 | Applied Materials Inc. | Method of depositing low k barrier layers |
| JP4284944B2 (ja) * | 2002-08-23 | 2009-06-24 | ソニー株式会社 | 窒化ガリウム系半導体レーザ素子の製造方法 |
-
2015
- 2015-03-16 JP JP2015051636A patent/JP5896346B2/ja active Active
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