JP2015098434A - 三塩化ガリウムの噴射方式 - Google Patents
三塩化ガリウムの噴射方式 Download PDFInfo
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- JP2015098434A JP2015098434A JP2014233896A JP2014233896A JP2015098434A JP 2015098434 A JP2015098434 A JP 2015098434A JP 2014233896 A JP2014233896 A JP 2014233896A JP 2014233896 A JP2014233896 A JP 2014233896A JP 2015098434 A JP2015098434 A JP 2015098434A
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- Prior art keywords
- reaction chamber
- gacl
- precursor
- group iii
- reactor
- Prior art date
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Links
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 title claims abstract description 178
- 238000002347 injection Methods 0.000 title claims description 8
- 239000007924 injection Substances 0.000 title claims description 8
- 238000000034 method Methods 0.000 title abstract description 129
- 238000006243 chemical reaction Methods 0.000 claims abstract description 160
- 239000007789 gas Substances 0.000 claims abstract description 123
- 239000000758 substrate Substances 0.000 claims abstract description 64
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- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- 239000000539 dimer Substances 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- 239000013638 trimer Substances 0.000 claims abstract description 6
- 239000002243 precursor Substances 0.000 claims description 97
- 239000000463 material Substances 0.000 claims description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 47
- 239000010453 quartz Substances 0.000 claims description 46
- 239000000376 reactant Substances 0.000 claims description 31
- 238000012546 transfer Methods 0.000 claims description 19
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- 239000006227 byproduct Substances 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 14
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 7
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
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- 238000010276 construction Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
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- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 3
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- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
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- 150000002259 gallium compounds Chemical class 0.000 description 2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B7/00—Working up raw materials other than ores, e.g. scrap, to produce non-ferrous metals and compounds thereof; Methods of a general interest or applied to the winning of more than two metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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Abstract
【解決手段】気体三塩化ガリウムの供給源と、窒素を含む原料ガスの供給源と、それらを反応させて単結晶GaNを形成する反応室と、気体三塩化ガリウムを前記反応室に入れる前に、反応を阻害する塩化ガリウム二量体または三量体を少なくとも700℃に加熱して分解するための加熱装置とを備え、前記気体三塩化ガリウムは、Ga元素として50g/時の質量流量で、少なくとも48時間の間、連続的に供給可能である単結晶GaN形成システム。
【選択図】なし
Description
本発明は、これまで不可能であったIII−V族化合物半導体ウェハの高成長速度/大量製造装置および方法を提供する。この装置は、数週間または数カ月の間、保守のために生産を停止する必要がない持続的生産能力を有する。この装置は、1ないし4時間ごとに少なくとも1枚のウェハ(または1バッチのウェハ)を生産することができる高スループット生産能力を有する。このように生産されたIII−V族化合物半導体ウェハは、光学および電子構成要素の製造、追加のエピタキシャル堆積用の基板、ならびに他の半導体材料用途に適する。
便宜を考えて、次に、図1を参照して、本発明を、3つの基本サブシステム、すなわちプロセスガス(または液)を供給するサブシステム1、反応室を含むサブシステム3、および廃棄物低減(waste abatement)用のサブシステム5に関して概括的に説明する。ただし、本発明はこの説明に限定されない。
第1のサブシステムであるプロセスガスサブシステム、特にガリウム化合物蒸気供給源の構造は、本発明の重要な特徴である。ここで、知られているGaN VPEプロセスを簡単に説明する。GaN VPEエピタキシは、加熱された基板の表面に、窒素(N)およびガリウム(Ga)(ならびに、混合窒化物を形成するためのIII族金属を含む任意選択の他の1種または数種のガス、および特定の電子伝導性を与えるための任意選択の1種または数種のドーパント)を含む前駆体ガスからGaNを直接に合成することを含む。このGaを含むガスは通常、一塩化ガリウム(GaCl)または三塩化ガリウム(GaCl3)、あるいはガリウム有機化合物、例えばトリエチルガリウム(TEG)またはトリメチルガリウム(TMG)である。最初のケースでは、このプロセスが、HVPE(Halide Vapor Pressure Epitaxy)と呼ばれ、2番目のケースでは、MOVPE(Metal Organic Vapor Pressure Epitaxy)と呼ばれる。
次に、経済性を向上させるため、リアクタサブシステムは、市販のリアクタシステムを適合させたものであることが好ましい。本発明における適合および使用に対して好ましい使用可能なリアクタは、次に説明する特徴の大部分または全部を含む。これらの特徴は、本明細書に開示された変更および改良を有するGaN層のHVMに対して有用であることが分かっている。以下の説明は主に既存の装置を適合させる実施形態を対象とするが、リアクタおよびリアクタシステムは、後述する特徴を含むように目的に合わせて構築することができる。本発明は、既存の装置を再設計し変更することと、新たな装置を設計し製造することの両方を含む。本発明はさらにその結果得られる装置を含む。
最初に、新たなウェハを導入した後に昇温させるのにかかる時間および堆積ラン後に降温させるのにかかる時間は非生産的であり、制限または最小化されなければならない。したがって、好ましいリアクタおよび加熱装置はさらに、低いサーマルマス(すなわち熱を急速に吸収する能力)を有し、サーマルマスが低いほど好ましい。好ましいこのようなリアクタは、赤外(IR)加熱ランプによって加熱され、IRを透過する壁を有する。図1は、石英でできたリアクタ25を示し、リアクタ25は、縦方向の下IRランプ27および横断方向の上IRランプ29によって加熱される。石英は、IRを十分に透過し、Clに対して十分に抵抗性であり、十分に耐火性であるため、好ましい室壁材料である。
反応室内部を洗浄するのにかかる時間も非生産的であり、やはり制限または最小化されなければならない。GaN堆積プロセスの間に、前駆体、生成物または副生物を内壁に堆積または凝縮する可能性がある。このような堆積または凝縮は、室壁の温度を制御することによって、一般的は、前駆体および副生物の凝縮を防ぐには十分に高いが、壁の表面でのGaNの形成および堆積を防ぐには十分に低い中間温度まで室壁を冷却することによって、大幅に制限しまたは低減させることができる。GaCl3 HVPEプロセスに使用される前駆体は、約70から80℃未満で凝縮し、主要な副生物であるNH4Clは約140℃未満でないと凝縮しない。GaNは、約500℃を超える温度で形成および堆積し始める。室壁は温度T5に制御され、温度T5は、前駆体および副生物の凝縮をかなり制限するのには十分に高いことが分かっている200℃と、室壁の表面のGaN堆積をかなり制限するのには十分に低いことが分かっている500℃の間にあることが好ましい。室壁の好ましい温度範囲は250から350℃である。
ウェハのロードおよびアンロード時間も非生産的である。この時間は、39に概略的に示された自動装置によって通常通りに制限することができる。当技術分野で知られているとおり、この自動装置はウェハを格納し、反応室にウェハをロードし、反応室からウェハをアンロードすることができ、一般に、外部ホルダと反応室内のサセプタとの間でウェハを、例えば移送ワンドを使用して移動させるロボットアームなどを含む。ウェハ移送の間、中間のウェハ移送室によって、周囲環境への曝露から反応室を分離することができる。例えば、移送室と外部との間の制御可能な扉は、ロードおよびアンロードを可能にすることができ、次いで周囲環境への曝露に対して移送室を密封することができる。フラッシングおよび調製の後、移送室とリアクタの間の他の制御可能な扉を開けて、サセプタ上へのウェハの配置およびサセプタ上のウェハの取出しを可能にすることができる。このようなシステムはさらに、酸素、水分または大気中の他の汚染物質へのリアクタ内部の曝露を防ぎ、ウェハのロードおよびアンロードの前のパージ時間を短縮する。石英ベルヌーイ移送ワンドは、汚染を引き起こすことなく高温のウェハをハンドリングすることを可能にすることにより、非生産的な時間を低減させるため、石英ベルヌーイ移送ワンドを使用することが好ましい。
入口マニホルド33から出口マニホルド35までの矢印31の方向のプロセスガス流の制御は、高品質GaN層を堆積させるために重要である。この流れは、プロセスガスに対する以下の好ましい特性を含む。第1に、ガリウムを含むガス、例えばGaCl3と、窒素を含むガス、例えばNH3とは、別々の入口を通って反応室に入ることが好ましい。これらのガスが反応室の外側で混合されてはならない。このような混合は、望ましくない反応、例えばその後のGaN堆積を妨害するGaCl3分子とNH3分子の錯体の形成につながる可能性があるからである。
サセプタおよびそのマウントは、当技術分野において一般に知られている標準構造とすることができる。例えば、サセプタは、炭化シリコンまたは窒化シリコンでコーティングされた黒鉛、あるいは耐火性の金属または合金を含むことができる。サセプタは、シャフト上で回転するように取り付けられることが好ましい。GaN堆積の間、サセプタ温度T4は約1000から1100℃(またはそれ以上)とすることができ、知られている温度制御回路によって制御された石英IRランプによって維持される。サセプタの下のデッドゾーン(dead zone)の形成を防ぐため、サセプタのマウントは、パージガスの噴射を提供することが好ましい。この噴射は、加熱されたサセプタおよび(直接にまたは間接的に)加熱される可能性がある隣接する構成要素の下面への不必要な堆積を制限または最小化することができるため有利である。サセプタは、1つまたは複数の基板を保持するように構成することができる。
反応室出口マニホルド35は、反応室から排出管路41を通って廃棄物低減システム5に至る排出ガスの自由で障害のない流れを提供する。この排出システムはさらに、ポンプ(42)および関連圧力制御システム(圧力制御弁(44)、圧力計(46)および減圧での動作を可能にする関連制御装置)を含むことができる。有利には、反応生成物の凝縮を制限するため、出口マニホルド排出管路および圧力制御装置(使用される場合)も温度制御される。排出ガスおよび反応生成物は一般に、キャリヤガス、未反応のプロセスガス、すなわちGaCl3およびNH3、主としてNH4Cl、NH4GaCl4、HClおよびH2である反応副生物を含む。前述のとおり、GaCl3の凝縮を防ぐためには約130℃を超える温度が必要である。約140℃未満の温度でNH4Clは凝縮して粉状材料となり、出口マニホルドおよび排出システムはこの温度よりも高温に維持されなければならない。一方、シール材料の劣化を防ぐためには、出口マニホルド温度が約160℃を超えてはならない。
次に、廃棄物低減サブシステム5を考えると、好ましい排除システムは、反応室から排出された廃棄ガリウム化合物を回収することによって、本発明の経済的な動作に寄与することができる。本発明の単一の実施形態は、1カ月の持続的大量製造の間に30kgまたは60kg、あるいはそれ以上を排出しうる(約50%が廃棄物になると仮定した場合)。現在のGa価格では、この廃棄Gaを回収し、それをGaCl3前駆体にリサイクルすることは経済的であり、これにより約90から100%のGa効率が効果的に達成される。
次に、以上に概括的に説明した発明の好ましい特定の実施形態を説明する。この実施形態は、ASM America,Inc.社のEPSILON(登録商標)シリーズの単ウェハ型エピタキシャルリアクタの変更および適合に基づく。したがって、以下の特徴の多くは、この好ましい特定の実施形態に固有である。しかしながら、これらの特徴は本発明を限定するものではない。他の特定の実施形態は、使用可能な他のエピタキシャルリアクタの変更および適合に基づくことができ、それらも本発明の範囲に含まれる。
次に、本発明に基づくIII−V族材料のHVMを実行したときに得られる利点および意外な利益を示すため、本発明を、標準または従来のHVPEシステムと比較する。この比較を記載する前に、導入として、従来のHVPEシステムの関連部分を簡単に説明する。
Claims (11)
- 単結晶III−V族半導体材料を形成するシステムであって、1つの反応物としての気体III族前駆体の供給源と、他の反応物としてのV族成分の供給源と、前記反応物を受け取り、それらと反応させて前記単結晶III−V族半導体材料を形成する反応室と、前記半導体材料の製造を容易にするために、前記気体III族前駆体を、前記反応室に入れる前に、望ましくない前駆体化合物を前記反応室に導入することを防ぐ十分に高い温度まで加熱する加熱装置とを備え、
前記望ましくない前駆体化合物は、前記III族前駆体と前記V族成分との反応を低減させる前記III族前駆体の二量体、三量体または他の分子異体を含み、
前記III族前駆体は、前記反応室に入れる前に、塩化ガリウム二量体または三量体を分解するのに十分な温度まで加熱される気体三塩化ガリウムであり、
前記気体V族成分は、単結晶III族窒化物が形成されるように、窒素を含む成分であり、前記気体III族前駆体よりも大量に供給されることを特徴とするシステム。 - 前記半導体材料の大量製造を容易にするために、前記気体III族前駆体の供給源は、前記前駆体を、III族元素として少なくとも50g/時の質量流量で、少なくとも48時間、連続的に供給するだけの十分な大きさを有することを特徴とする請求項1に記載のシステム。
- 前記反応室は水平方向の長方形の室として構成され、1つまたは複数の基板の表面に前記半導体材料を堆積させるために、前記反応物が、前記1つまたは複数の基板に隣接した、前記1つまたは複数の基板のすぐ上方の所定の位置で合流するまで、前記反応物が反応しないように、前記反応物を導入する開口は、前記室の異なる部分に配置されることを特徴とする請求項1に記載のシステム。
- 前記反応室は、床、天井、一対の側壁、開いた入口、開いた出口を含み、1つの反応物入室開口は、その反応物を前記反応室に導入する前記床の水平スロットを含み、前記スロットは、前記反応物を導入し、他の反応物と反応させるために前記反応物を前記所定の位置まで導くように構成され、寸法が決められていることを特徴とする請求項3に記載のシステム。
- 前記前駆体を前記スロットを通して前記反応ゾーンに導入するために、前記気体III族前駆体の供給源は、前記スロットとガス流に関して関連付けられていることを特徴とする請求項4に記載のシステム。
- 熱伝達材料をその中に含んだノズルを含む反応物導入装置をさらに含み、前記前駆体を前記反応室に導入する前に前記前駆体を加熱するために、前記装置は、前記加熱装置に動作可能に関連付けられていることを特徴とする請求項5に記載のシステム。
- 前記加熱装置は、前記三塩化ガリウムを少なくとも700℃まで加熱することを特徴とする請求項6に記載のシステム。
- 前記反応室はさらに、前記単結晶半導体材料をその表面に堆積させる前記1つまたは複数の基板を保持する回転可能な支持体を含むことを特徴とする請求項6に記載のシステム。
- 前記1つまたは複数の基板の表面に前記単結晶半導体材料を効率的に形成するために、前記反応室はさらに、前記他の反応物を前記所定の位置に導く噴射ノズルを備えた前記他の反応物の入室開口を含むことを特徴とする請求項8に記載のシステム。
- 前記反応室は石英でできていることを特徴とする請求項1に記載のシステム。
- 前記反応室は1つまたは複数の壁を含み、囲いによって取り囲まれており、前記囲いは、前記1つまたは複数の反応室壁への前記III族前駆体または反応副生物の堆積を低減させ、あるいは防いで、保守が必要になるまでの動作時間をより長くするために、前記囲いの中で空気を循環させて前記1つまたは複数の反応室壁の温度を下げる1つまたは複数のファンに動作可能に関連付けられていることを特徴とする請求項1に記載のシステム。
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ATE546570T1 (de) | 2006-11-22 | 2012-03-15 | Soitec Silicon On Insulator | Verfahren zur epitaktischen abscheidung von einkristallinen iii-v halbleitermaterial |
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EP2227576B1 (en) | 2007-12-20 | 2015-06-03 | Soitec | Apparatus for delivering precursor gases to an epitaxial growth substrate |
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Also Published As
Publication number | Publication date |
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JP6117169B2 (ja) | 2017-04-19 |
EP2084304A2 (en) | 2009-08-05 |
US20090178611A1 (en) | 2009-07-16 |
EP2084304A4 (en) | 2010-07-14 |
US8323407B2 (en) | 2012-12-04 |
WO2008064083A3 (en) | 2008-09-04 |
EP2084304B1 (en) | 2013-06-26 |
US8197597B2 (en) | 2012-06-12 |
KR20090083472A (ko) | 2009-08-03 |
WO2008064083A2 (en) | 2008-05-29 |
KR101330156B1 (ko) | 2013-12-20 |
US20120048182A1 (en) | 2012-03-01 |
JP2010510166A (ja) | 2010-04-02 |
JP5656184B2 (ja) | 2015-01-21 |
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