JP2015079956A - 薄膜トランジスタとその製造方法 - Google Patents
薄膜トランジスタとその製造方法 Download PDFInfo
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- JP2015079956A JP2015079956A JP2014193283A JP2014193283A JP2015079956A JP 2015079956 A JP2015079956 A JP 2015079956A JP 2014193283 A JP2014193283 A JP 2014193283A JP 2014193283 A JP2014193283 A JP 2014193283A JP 2015079956 A JP2015079956 A JP 2015079956A
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- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 96
- 230000004888 barrier function Effects 0.000 claims abstract description 52
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000011159 matrix material Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 16
- 238000000206 photolithography Methods 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 11
- 239000011787 zinc oxide Substances 0.000 claims description 9
- -1 zinc oxide compound Chemical class 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000007704 wet chemistry method Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 239000000615 nonconductor Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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Abstract
Description
2 ゲート誘電体
3 酸化物半導体
4 酸化物半導体3と直に繋がる材料
5 障壁層
6 接点材料
Claims (16)
- 酸化物半導体チャネルと金属又は酸化物のゲート接点、ドレイン接点及びソース接点とを備えた、特に、アクティブマトリックス表示用の薄膜トランジスタにおいて、
酸化物半導体チャネル(3)とドレイン接点及びソース接点(6)の間には、酸化物半導体チャネル(3)とそれ以外の層(1,2,6)、特に、ドレイン接点及びソース接点(6)との間の酸素の交換を阻止する少なくとも一つの障壁層(4,5)が配置されていることを特徴とする装置。 - 当該の一つ以上の障壁層(4,5)が、取り去られる形で構造化された、酸化物半導体チャネル(3)と直に接触する導電層(4)から構成されることを特徴とする請求項1に記載の薄膜トランジスタ。
- 当該のドレイン接点及びソース接点(6)も、酸化物半導体チャネル(3)と直に接触する層(4)の材料から構成されることを特徴とする請求項2に記載の薄膜トランジスタ。
- 当該の酸化物半導体チャネル(3)と直に接触する層(4)が、ドーピングされた酸化物半導体及び/又はドーピングされていない酸化物半導体から構成されることを特徴とする請求項2又は3に記載の薄膜トランジスタ。
- 当該の酸化物半導体チャネル(3)と直に接触する層(4)が、少なくとも部分的に酸化亜鉛化合物から構成されることを特徴とする請求項4に記載の薄膜トランジスタ。
- 当該の酸化亜鉛化合物がアルミニウム酸化亜鉛化合物であることを特徴とする請求項5に記載の薄膜トランジスタ。
- 当該の一つ以上の障壁層(4,5)が電気絶縁体、特に、シリコン酸化物又はシリコン窒化物から構成されることを特徴とする請求項1から6までのいずれか一つに記載の薄膜トランジスタ。
- 当該の酸化物半導体チャネル(3)が酸化亜鉛化合物から構成されることを特徴とする請求項1から7までのいずれか一つに記載の薄膜トランジスタ。
- 当該の酸化亜鉛化合物がインジウムガリウム酸化亜鉛化合物であることを特徴とする請求項8に記載の薄膜トランジスタ。
- 請求項1から9までのいずれか一つに記載の薄膜トランジスタの製造方法において、
少なくとも一つ以上の障壁層(4,5)をバックチャネルエッチング工程により構造化することを特徴とする方法。 - 当該のバックチャネルエッチング工程を湿式化学により実行することを特徴とする請求項10に記載の方法。
- 当該の一つ以上の障壁層(4,5)を接点材料(6)の目的通りの酸化により製造することを特徴とする請求項10又は11に記載の方法。
- 少なくとも一つの障壁層(4)として、酸化物半導体材料から成る層を酸化物半導体チャネル(3)上に成膜して、その層が半導体チャネル(3)と接点(6)の間の電気的なブリッジを形成するように構造化することを特徴とする請求項10から12までのいずれか一つに記載の方法。
- このトランジスタの層(1〜6)の全体で三回のフォトリソグラフィによる構造化を行なうことを特徴とする請求項10から13までのいずれか一つに記載の方法。
- 先ずは、基板上にゲート材料(1)を成膜して、フォトリソグラフィにより構造化した後、少なくとも、一つのゲート誘電体(2)、一つのチャネル用酸化物半導体材料(3)及び少なくとも一つの障壁層(4,5)から成る一連の層を順番に成膜して、この少なくとも一つの障壁層(5)をフォトリソグラフィにより構造化し、次に、接点材料(6)を成膜して、フォトリソグラフィにより構造化した後、この構造化された接点材料(6)をバックチャネルエッチング工程におけるマスクとして使用して、一つ以上の障壁層(4)を構造化することを特徴とする請求項10から14までのいずれか一つに記載の方法。
- チャネルに対する更に別のフォトリソグラフィマスクを使用して、当該の酸化物半導体材料(3)を構造化した後、当該の少なくとも一つの障壁層(4,5)と接点材料(6)を成膜して、構造化することを特徴とする請求項15に記載の方法。
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DE102013111501.2A DE102013111501B4 (de) | 2013-10-18 | 2013-10-18 | Dünnschichttransistor und Verfahren zu seiner Herstellung |
DE102013111501.2 | 2013-10-18 |
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TW437096B (en) | 1999-12-20 | 2001-05-28 | Hannstar Display Corp | Manufacturing method for thin film transistor |
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TWI544525B (zh) * | 2011-01-21 | 2016-08-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
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- 2014-10-16 US US14/515,579 patent/US9425321B2/en active Active
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JP2009231613A (ja) * | 2008-03-24 | 2009-10-08 | Fujifilm Corp | 薄膜電界効果型トランジスタおよび表示装置 |
JP2010062549A (ja) * | 2008-08-08 | 2010-03-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2011142316A (ja) * | 2009-12-11 | 2011-07-21 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
JP2012109546A (ja) * | 2010-10-20 | 2012-06-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2013080769A (ja) * | 2011-10-03 | 2013-05-02 | Sony Corp | 薄膜トランジスタならびに表示装置および電子機器 |
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TW201519450A (zh) | 2015-05-16 |
DE102013111501B4 (de) | 2024-02-08 |
TWI575755B (zh) | 2017-03-21 |
US20150108469A1 (en) | 2015-04-23 |
US9425321B2 (en) | 2016-08-23 |
KR20150045386A (ko) | 2015-04-28 |
DE102013111501A1 (de) | 2015-04-23 |
JP6067638B2 (ja) | 2017-01-25 |
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