JP2015079936A - 低温ポリシリコン薄膜トランジスタの製造方法 - Google Patents
低温ポリシリコン薄膜トランジスタの製造方法 Download PDFInfo
- Publication number
- JP2015079936A JP2015079936A JP2014144951A JP2014144951A JP2015079936A JP 2015079936 A JP2015079936 A JP 2015079936A JP 2014144951 A JP2014144951 A JP 2014144951A JP 2014144951 A JP2014144951 A JP 2014144951A JP 2015079936 A JP2015079936 A JP 2015079936A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- etching
- layer
- film transistor
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 24
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 238000001020 plasma etching Methods 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 25
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 claims 2
- 229910004205 SiNX Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310479753.0A CN104576387B (zh) | 2013-10-14 | 2013-10-14 | 低温多晶硅薄膜晶体管制造方法 |
| CN201310479753.0 | 2013-10-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2015079936A true JP2015079936A (ja) | 2015-04-23 |
Family
ID=53011106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014144951A Pending JP2015079936A (ja) | 2013-10-14 | 2014-07-15 | 低温ポリシリコン薄膜トランジスタの製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2015079936A (zh) |
| CN (1) | CN104576387B (zh) |
| TW (1) | TWI528464B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020509603A (ja) * | 2017-03-30 | 2020-03-26 | 深▲せん▼市華星光電技術有限公司Ｓｈｅｎｚｈｅｎ Ｃｈｉｎａ Ｓｔａｒ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． | Ｔｆｔバックプレーンの製造方法及びｔｆｔバックプレーン |
| US10957712B2 (en) | 2017-08-02 | 2021-03-23 | Sharp Kabushiki Kaisha | Substrate and method for producing substrate |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107527819B (zh) * | 2017-08-07 | 2019-08-30 | 武汉华星光电半导体显示技术有限公司 | 底栅型低温多晶硅晶体管的制备方法 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62174073A (ja) * | 1985-12-26 | 1987-07-30 | Sagami Chem Res Center | ４−〔６−（４，５−ジヒドロ−４−メチル−３−メチレン−３ｈ−２−フラノン−５−イル）−１，３−ジオキサン−４−イル〕−２，６−ピペリジンジオン誘導体 |
| JPH07211912A (ja) * | 1994-01-21 | 1995-08-11 | Fuji Xerox Co Ltd | 薄膜トランジスタ及びその製造方法 |
| JPH11154704A (ja) * | 1997-11-20 | 1999-06-08 | Sony Corp | 半導体装置の製造方法 |
| JPH11297675A (ja) * | 1998-04-16 | 1999-10-29 | Sony Corp | 半導体製造装置 |
| JP2001308076A (ja) * | 2000-04-27 | 2001-11-02 | Nec Corp | 半導体装置の製造方法 |
| JP2002533925A (ja) * | 1998-12-18 | 2002-10-08 | タレス | Ｃｍｏｓトランジスタ及び関連素子の製造方法 |
| US20040004220A1 (en) * | 2002-06-21 | 2004-01-08 | Koji Suzuki | Thin film transistor |
| JP2004031409A (ja) * | 2002-06-21 | 2004-01-29 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法 |
| JP2005129906A (ja) * | 2003-10-21 | 2005-05-19 | Applied Materials Inc | エッチングプロセスの精度及び反復性を制御する装置及び方法 |
| JP2012044157A (ja) * | 2010-07-23 | 2012-03-01 | Semiconductor Energy Lab Co Ltd | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6933241B2 (en) * | 2002-06-06 | 2005-08-23 | Nec Corporation | Method for forming pattern of stacked film |
| US7145209B2 (en) * | 2003-05-20 | 2006-12-05 | Tpo Displays Corp. | Thin film transistor and fabrication method thereof |
| US7592628B2 (en) * | 2006-07-21 | 2009-09-22 | Tpo Displays Corp. | Display with thin film transistor devices having different electrical characteristics in pixel and driving regions |
-
2013
- 2013-10-14 CN CN201310479753.0A patent/CN104576387B/zh active Active
- 2013-11-15 TW TW102141692A patent/TWI528464B/zh active
-
2014
- 2014-07-15 JP JP2014144951A patent/JP2015079936A/ja active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62174073A (ja) * | 1985-12-26 | 1987-07-30 | Sagami Chem Res Center | ４−〔６−（４，５−ジヒドロ−４−メチル−３−メチレン−３ｈ−２−フラノン−５−イル）−１，３−ジオキサン−４−イル〕−２，６−ピペリジンジオン誘導体 |
| JPH07211912A (ja) * | 1994-01-21 | 1995-08-11 | Fuji Xerox Co Ltd | 薄膜トランジスタ及びその製造方法 |
| JPH11154704A (ja) * | 1997-11-20 | 1999-06-08 | Sony Corp | 半導体装置の製造方法 |
| JPH11297675A (ja) * | 1998-04-16 | 1999-10-29 | Sony Corp | 半導体製造装置 |
| JP2002533925A (ja) * | 1998-12-18 | 2002-10-08 | タレス | Ｃｍｏｓトランジスタ及び関連素子の製造方法 |
| JP2001308076A (ja) * | 2000-04-27 | 2001-11-02 | Nec Corp | 半導体装置の製造方法 |
| US20040004220A1 (en) * | 2002-06-21 | 2004-01-08 | Koji Suzuki | Thin film transistor |
| JP2004031409A (ja) * | 2002-06-21 | 2004-01-29 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法 |
| JP2005129906A (ja) * | 2003-10-21 | 2005-05-19 | Applied Materials Inc | エッチングプロセスの精度及び反復性を制御する装置及び方法 |
| JP2012044157A (ja) * | 2010-07-23 | 2012-03-01 | Semiconductor Energy Lab Co Ltd | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020509603A (ja) * | 2017-03-30 | 2020-03-26 | 深▲せん▼市華星光電技術有限公司Ｓｈｅｎｚｈｅｎ Ｃｈｉｎａ Ｓｔａｒ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． | Ｔｆｔバックプレーンの製造方法及びｔｆｔバックプレーン |
| US10957712B2 (en) | 2017-08-02 | 2021-03-23 | Sharp Kabushiki Kaisha | Substrate and method for producing substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104576387B (zh) | 2017-07-25 |
| CN104576387A (zh) | 2015-04-29 |
| TWI528464B (zh) | 2016-04-01 |
| TW201515112A (zh) | 2015-04-16 |
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