JP2015067869A5 - - Google Patents
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- Publication number
- JP2015067869A5 JP2015067869A5 JP2013203717A JP2013203717A JP2015067869A5 JP 2015067869 A5 JP2015067869 A5 JP 2015067869A5 JP 2013203717 A JP2013203717 A JP 2013203717A JP 2013203717 A JP2013203717 A JP 2013203717A JP 2015067869 A5 JP2015067869 A5 JP 2015067869A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- gas
- supplying
- metal element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 33
- 239000000758 substrate Substances 0.000 claims 23
- 238000000034 method Methods 0.000 claims 22
- 239000002184 metal Substances 0.000 claims 21
- 239000012495 reaction gas Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 10
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 7
- 229910052731 fluorine Inorganic materials 0.000 claims 7
- 239000011737 fluorine Substances 0.000 claims 7
- 230000001603 reducing effect Effects 0.000 claims 5
- 229910001872 inorganic gas Inorganic materials 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 125000003277 amino group Chemical group 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013203717A JP5864503B2 (ja) | 2013-09-30 | 2013-09-30 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| US14/499,952 US9187826B2 (en) | 2013-09-30 | 2014-09-29 | Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium |
| US14/886,768 US9558937B2 (en) | 2013-09-30 | 2015-10-19 | Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013203717A JP5864503B2 (ja) | 2013-09-30 | 2013-09-30 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015251090A Division JP6030746B2 (ja) | 2015-12-24 | 2015-12-24 | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015067869A JP2015067869A (ja) | 2015-04-13 |
| JP2015067869A5 true JP2015067869A5 (OSRAM) | 2015-07-30 |
| JP5864503B2 JP5864503B2 (ja) | 2016-02-17 |
Family
ID=52740582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013203717A Active JP5864503B2 (ja) | 2013-09-30 | 2013-09-30 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US9187826B2 (OSRAM) |
| JP (1) | JP5864503B2 (OSRAM) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| JP5959307B2 (ja) * | 2011-06-22 | 2016-08-02 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| JP6243290B2 (ja) * | 2014-05-01 | 2017-12-06 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US20170309490A1 (en) * | 2014-09-24 | 2017-10-26 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
| KR102323248B1 (ko) * | 2015-03-25 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
| KR102397797B1 (ko) * | 2015-05-27 | 2022-05-12 | 램 리써치 코포레이션 | 순차적인 cvd 프로세스에 의한 저 불소 텅스텐의 증착 |
| JP6541438B2 (ja) * | 2015-05-28 | 2019-07-10 | 東京エレクトロン株式会社 | 金属膜のストレス低減方法および金属膜の成膜方法 |
| CN109563619A (zh) * | 2016-07-26 | 2019-04-02 | 东京毅力科创株式会社 | 钨膜的成膜方法 |
| JP6751631B2 (ja) * | 2016-09-13 | 2020-09-09 | 東京エレクトロン株式会社 | 基板の凹部をタングステンで充填する方法 |
| JP6548622B2 (ja) * | 2016-09-21 | 2019-07-24 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置及びプログラム |
| JP6760833B2 (ja) * | 2016-12-20 | 2020-09-23 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、およびプログラム |
| KR102453245B1 (ko) * | 2017-02-23 | 2022-10-07 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법, 컴퓨터 프로그램 및 처리 용기 |
| JP6602332B2 (ja) * | 2017-03-28 | 2019-11-06 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| US11348795B2 (en) | 2017-08-14 | 2022-05-31 | Lam Research Corporation | Metal fill process for three-dimensional vertical NAND wordline |
| CN111066124A (zh) * | 2017-09-25 | 2020-04-24 | 株式会社国际电气 | 半导体装置的制造方法、基板处理装置及程序 |
| KR102480740B1 (ko) * | 2018-03-20 | 2022-12-23 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 프로그램 |
| KR102806630B1 (ko) | 2018-05-03 | 2025-05-12 | 램 리써치 코포레이션 | 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법 |
| JP7233188B2 (ja) * | 2018-09-20 | 2023-03-06 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP7649741B2 (ja) | 2018-12-14 | 2025-03-21 | ラム リサーチ コーポレーション | ３ｄ ｎａｎｄ構造上の原子層堆積 |
| KR20250011245A (ko) * | 2019-02-28 | 2025-01-21 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
| CN113518836B (zh) * | 2019-03-06 | 2023-11-24 | 株式会社国际电气 | 半导体装置的制造方法、记录介质、基板处理装置和基板处理方法 |
| KR20210141762A (ko) | 2019-04-11 | 2021-11-23 | 램 리써치 코포레이션 | 고 단차 커버리지 (step coverage) 텅스텐 증착 |
| US12237221B2 (en) | 2019-05-22 | 2025-02-25 | Lam Research Corporation | Nucleation-free tungsten deposition |
| WO2021030836A1 (en) | 2019-08-12 | 2021-02-18 | Lam Research Corporation | Tungsten deposition |
| WO2022025644A1 (ko) * | 2020-07-30 | 2022-02-03 | 주성엔지니어링(주) | 박막 형성 방법 |
| KR20230104735A (ko) * | 2020-12-17 | 2023-07-10 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 방법, 프로그램, 기판 처리 장치 및 반도체 장치의 제조 방법 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0225568A (ja) * | 1988-07-15 | 1990-01-29 | Hitachi Ltd | 微細孔の金属穴埋め方法 |
| US5413669A (en) * | 1994-02-07 | 1995-05-09 | Applied Materials, Inc. | Metal CVD process with post-deposition removal of alloy produced by CVD process |
| US6335282B1 (en) * | 1999-08-26 | 2002-01-01 | Micron Technology, Inc. | Method of forming a titanium comprising layer and method of forming a conductive silicide contact |
| JP4746234B2 (ja) * | 1999-10-15 | 2011-08-10 | エーエスエム インターナショナル エヌ．ヴェー． | 感受性表面上にナノラミネート薄膜を堆積するための方法 |
| US7732327B2 (en) * | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
| US6551929B1 (en) * | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| JP4103461B2 (ja) | 2001-08-24 | 2008-06-18 | 東京エレクトロン株式会社 | 成膜方法 |
| JP4595989B2 (ja) | 2001-08-24 | 2010-12-08 | 東京エレクトロン株式会社 | 成膜方法 |
| JP2007523994A (ja) * | 2003-06-18 | 2007-08-23 | アプライド マテリアルズ インコーポレイテッド | バリヤ物質の原子層堆積 |
| KR100876976B1 (ko) * | 2007-01-31 | 2009-01-09 | 삼성전자주식회사 | 반도체 소자의 배선 및 이의 형성 방법 |
| WO2011049816A2 (en) * | 2009-10-20 | 2011-04-28 | Asm International N.V. | Processes for passivating dielectric films |
| JP2012151435A (ja) | 2010-12-27 | 2012-08-09 | Elpida Memory Inc | 半導体装置の製造方法 |
-
2013
- 2013-09-30 JP JP2013203717A patent/JP5864503B2/ja active Active
-
2014
- 2014-09-29 US US14/499,952 patent/US9187826B2/en active Active
-
2015
- 2015-10-19 US US14/886,768 patent/US9558937B2/en active Active
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