JP2015065402A - 磁気抵抗素子およびそれを用いた磁気センサ - Google Patents
磁気抵抗素子およびそれを用いた磁気センサ Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 69
- 150000004767 nitrides Chemical class 0.000 claims abstract description 24
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 17
- 230000005415 magnetization Effects 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 401
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 239000010936 titanium Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910019236 CoFeB Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
本発明の第1実施形態に係る磁気抵抗素子を有するものとして、磁気センサを例に挙げて説明する。図1〜3を参照して、本実施形態に係る磁気センサS1について説明する。磁気センサS1は、TMR素子もしくはGMR素子などの磁気抵抗素子としての磁気抵抗膜層5を有する構成とされたセンサであり、ピン層5aとフリー層5c、5dとの間の非磁性中間層5bを流れる電流値等を計測することで外部磁界の印加方向(印加角度)を計測する。この磁気センサS1は、例えば、エンジンのクランク角やカム角を検出する角度センサに適用されると好適である。
本発明の第2実施形態について説明する。本実施形態は、第1実施形態に対して、第3捕獲層13および第4捕獲層14を追加したものあり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
4 第1捕獲層
5 磁気抵抗膜層
5a ピン層
5b 非磁性中間層
5c、5d フリー層
6a、6b 第2捕獲層
13 第3捕獲層
14 第4捕獲層
Claims (8)
- Bを含有する合金を含むと共に、磁場により電気抵抗が変化する層(5a、5c、5d)と、
前記電気抵抗が変化する層が拡散するBを捕獲するための捕獲層(6a、6b、13、14)と、を有することを特徴とする磁気抵抗素子。 - 前記電気抵抗が変化する層として、磁化方向が固定されているピン層(5a)と、
外部磁場によって磁化方向が追従して変化するフリー層(5c、5d)と、を備えると共に、
前記ピン層の磁化方向と前記フリー層の磁化方向との間の角度によって抵抗値が変化する非磁性中間層(5b)を備え、
前記ピン層および前記フリー層のうち少なくとも一方が、Bを含有する合金を含む構成とされていることを特徴とする請求項1に記載の磁気抵抗素子。 - 前記捕獲層が、体心立方格子構造の金属元素を成分とした導電性酸化膜もしくは導電性窒化膜によって構成されていることを特徴とする請求項1または2に記載の磁気抵抗素子。
- 前記捕獲層が、Taを成分として含むことを特徴とする請求項1ないし請求項3のいずれか一つに記載の磁気抵抗素子。
- 一面(5aa)および該一面と反対側の他面(5ab)を有し、磁化方向が固定されているピン層(5a)と、
前記ピン層の一面側に配置されて、外部磁場によって磁化方向が追従して変化するフリー層(5c、5d)と、
前記ピン層と前記フリー層との間に挟まれて前記ピン層の磁化方向と前記フリー層の磁化方向との間の角度によって抵抗値が変化する非磁性中間層(5b)とを備え、前記ピン層と前記フリー層との間の抵抗値に基づいて前記外部磁場の印加角度を測定する磁気センサにおいて、
前記ピン層および前記フリー層のうち少なくとも一方が、Fe、Co、Niのうちの少なくとも一つとBとの合金を含有する構成とされており、
前記ピン層および前記フリー層のうち、Fe、Co、Niのうちの少なくとも一つとBとの合金を含有する構成とされた層の少なくとも一つに隣接するように、前記ピン層が拡散するBもしくは前記フリー層が拡散するBを捕獲するための導電性酸化膜もしくは導電性窒化膜として構成された捕獲層(4、6a、6b、13、14)が設けられていることを特徴とする磁気センサ。 - 前記捕獲層として、前記ピン層の他面、もしくは、前記ピン層と前記非磁性中間層との間、のうち少なくとも一方において配置されている捕獲層(4、13)を有すると共に、
前記捕獲層として、前記非磁性中間層と前記フリー層との間、もしくは、前記フリー層のうち前記非磁性中間層と対向する面と反対側の面、のうち少なくとも一方において配置されている捕獲層(6a、6b、14)を有することを特徴とする請求項5に記載の磁気センサ。 - 前記捕獲層が、Ta、Ti、W、Ru、Nb、V、もしくはNiのうちの少なくとも一つの元素を成分として含むことを特徴とする請求項5または6に記載の磁気センサ。
- 前記捕獲層が、Taを成分として含むことを特徴とする請求項5ないし7のいずれか一つに記載の磁気センサ。
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JP2014113020A JP6225835B2 (ja) | 2013-08-28 | 2014-05-30 | 磁気抵抗素子およびそれを用いた磁気センサ |
US14/914,267 US9905752B2 (en) | 2013-08-28 | 2014-08-08 | Magneto-resistance element and magnetic sensor using the same |
PCT/JP2014/004140 WO2015029348A1 (ja) | 2013-08-28 | 2014-08-08 | 磁気抵抗素子およびそれを用いた磁気センサ |
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US10734443B2 (en) * | 2018-08-27 | 2020-08-04 | Allegro Microsystems, Llc | Dual manetoresistance element with two directions of response to external magnetic fields |
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