JP2015050362A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2015050362A
JP2015050362A JP2013181753A JP2013181753A JP2015050362A JP 2015050362 A JP2015050362 A JP 2015050362A JP 2013181753 A JP2013181753 A JP 2013181753A JP 2013181753 A JP2013181753 A JP 2013181753A JP 2015050362 A JP2015050362 A JP 2015050362A
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Japan
Prior art keywords
plasma
dispersion plate
generation unit
processing apparatus
plasma processing
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JP2013181753A
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English (en)
Japanese (ja)
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JP2015050362A5 (enExample
Inventor
芳文 小川
Yoshifumi Ogawa
芳文 小川
博昭 瀧川
Hiroaki Takigawa
博昭 瀧川
工藤　豊
Yutaka Kudo
豊 工藤
真一 磯崎
Shinichi Isozaki
真一 磯崎
隆浩 下村
Takahiro Shimomura
隆浩 下村
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2013181753A priority Critical patent/JP2015050362A/ja
Publication of JP2015050362A publication Critical patent/JP2015050362A/ja
Publication of JP2015050362A5 publication Critical patent/JP2015050362A5/ja
Pending legal-status Critical Current

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  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2013181753A 2013-09-03 2013-09-03 プラズマ処理装置 Pending JP2015050362A (ja)

Priority Applications (1)

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JP2013181753A JP2015050362A (ja) 2013-09-03 2013-09-03 プラズマ処理装置

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JP2013181753A JP2015050362A (ja) 2013-09-03 2013-09-03 プラズマ処理装置

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JP2015050362A true JP2015050362A (ja) 2015-03-16
JP2015050362A5 JP2015050362A5 (enExample) 2016-04-07

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016018727A (ja) * 2014-07-10 2016-02-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR20170101952A (ko) 2015-05-22 2017-09-06 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 장치 및 그것을 이용한 플라스마 처리 방법
KR20210041286A (ko) * 2019-10-07 2021-04-15 주식회사 테스 기판 처리 방법
KR20210131300A (ko) 2020-04-21 2021-11-02 주식회사 히타치하이테크 플라스마 처리 장치
WO2021233334A1 (zh) * 2020-05-22 2021-11-25 江苏鲁汶仪器有限公司 一种防击穿离子源放电装置
US11355319B2 (en) 2017-12-19 2022-06-07 Hitachi High-Tech Corporation Plasma processing apparatus
US11776792B2 (en) 2020-04-03 2023-10-03 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
US12451364B2 (en) 2022-04-26 2025-10-21 Hitachi High-Tech Corporation Plasma processing method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03123022A (ja) * 1989-10-05 1991-05-24 Toshiba Corp プラズマ成膜装置
JPH07296992A (ja) * 1992-05-06 1995-11-10 Internatl Business Mach Corp <Ibm> 共振器
JPH08148473A (ja) * 1994-11-15 1996-06-07 Toshiba Corp プラズマ処理装置
JPH08167596A (ja) * 1994-12-09 1996-06-25 Sony Corp プラズマ処理装置、プラズマ処理方法及び半導体装置の作製方法
JPH09289193A (ja) * 1996-04-23 1997-11-04 Matsushita Electric Ind Co Ltd プラズマ発生装置及びその方法、並びにプラズマ処理装置及びその方法
JP2002025998A (ja) * 2000-07-12 2002-01-25 Nec Corp 酸化シリコン膜の形成方法及びその形成装置
JP2008244103A (ja) * 2007-03-27 2008-10-09 Tokyo Electron Ltd プラズマ処理装置
JP2010077489A (ja) * 2008-09-25 2010-04-08 Hitachi Kokusai Electric Inc 基板処理装置
JP2011518408A (ja) * 2008-03-21 2011-06-23 東京エレクトロン株式会社 単色中性ビームで活性化される化学プロセスシステム及び当該システムの使用方法
JP2012227307A (ja) * 2011-04-19 2012-11-15 Japan Steel Works Ltd:The プラズマ処理装置及び被処理体のプラズマ処理方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03123022A (ja) * 1989-10-05 1991-05-24 Toshiba Corp プラズマ成膜装置
JPH07296992A (ja) * 1992-05-06 1995-11-10 Internatl Business Mach Corp <Ibm> 共振器
JPH08148473A (ja) * 1994-11-15 1996-06-07 Toshiba Corp プラズマ処理装置
JPH08167596A (ja) * 1994-12-09 1996-06-25 Sony Corp プラズマ処理装置、プラズマ処理方法及び半導体装置の作製方法
JPH09289193A (ja) * 1996-04-23 1997-11-04 Matsushita Electric Ind Co Ltd プラズマ発生装置及びその方法、並びにプラズマ処理装置及びその方法
JP2002025998A (ja) * 2000-07-12 2002-01-25 Nec Corp 酸化シリコン膜の形成方法及びその形成装置
JP2008244103A (ja) * 2007-03-27 2008-10-09 Tokyo Electron Ltd プラズマ処理装置
JP2011518408A (ja) * 2008-03-21 2011-06-23 東京エレクトロン株式会社 単色中性ビームで活性化される化学プロセスシステム及び当該システムの使用方法
JP2010077489A (ja) * 2008-09-25 2010-04-08 Hitachi Kokusai Electric Inc 基板処理装置
JP2012227307A (ja) * 2011-04-19 2012-11-15 Japan Steel Works Ltd:The プラズマ処理装置及び被処理体のプラズマ処理方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016018727A (ja) * 2014-07-10 2016-02-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR20170101952A (ko) 2015-05-22 2017-09-06 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 장치 및 그것을 이용한 플라스마 처리 방법
JP2018093226A (ja) * 2015-05-22 2018-06-14 株式会社日立ハイテクノロジーズ プラズマ処理装置およびそれを用いたプラズマ処理方法
KR20190102301A (ko) 2015-05-22 2019-09-03 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 장치 및 그것을 이용한 플라스마 처리 방법
KR20200024955A (ko) 2015-05-22 2020-03-09 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 장치 및 그것을 이용한 플라스마 처리 방법
US11355319B2 (en) 2017-12-19 2022-06-07 Hitachi High-Tech Corporation Plasma processing apparatus
KR102851427B1 (ko) 2019-10-07 2025-08-28 주식회사 테스 기판 처리 방법
KR20210041286A (ko) * 2019-10-07 2021-04-15 주식회사 테스 기판 처리 방법
US11776792B2 (en) 2020-04-03 2023-10-03 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
KR20210131300A (ko) 2020-04-21 2021-11-02 주식회사 히타치하이테크 플라스마 처리 장치
US12444582B2 (en) 2020-04-21 2025-10-14 Hitachi High-Tech Corporation Plasma processing apparatus
CN113709959A (zh) * 2020-05-22 2021-11-26 江苏鲁汶仪器有限公司 一种防击穿离子源放电装置
US12243713B2 (en) 2020-05-22 2025-03-04 Jiangsu Leuven Instruments Co. Ltd Anti-breakdown ion source discharge apparatus
EP4145961A4 (en) * 2020-05-22 2023-11-01 Jiangsu Leuven Instruments Co. Ltd ANTI-BREAKDOWN ION SOURCE DISCHARGE APPARATUS
WO2021233334A1 (zh) * 2020-05-22 2021-11-25 江苏鲁汶仪器有限公司 一种防击穿离子源放电装置
US12451364B2 (en) 2022-04-26 2025-10-21 Hitachi High-Tech Corporation Plasma processing method

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