WO2021233334A1 - 一种防击穿离子源放电装置 - Google Patents

一种防击穿离子源放电装置 Download PDF

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Publication number
WO2021233334A1
WO2021233334A1 PCT/CN2021/094603 CN2021094603W WO2021233334A1 WO 2021233334 A1 WO2021233334 A1 WO 2021233334A1 CN 2021094603 W CN2021094603 W CN 2021094603W WO 2021233334 A1 WO2021233334 A1 WO 2021233334A1
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WIPO (PCT)
Prior art keywords
ion source
radio frequency
coil
chamber
coil support
Prior art date
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PCT/CN2021/094603
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English (en)
French (fr)
Inventor
张瑶瑶
胡冬冬
张军
李娜
刘海洋
程实然
郭颂
许开东
Original Assignee
江苏鲁汶仪器有限公司
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Application filed by 江苏鲁汶仪器有限公司 filed Critical 江苏鲁汶仪器有限公司
Priority to US17/999,549 priority Critical patent/US20230207260A1/en
Priority to KR1020227043599A priority patent/KR20230015935A/ko
Priority to JP2022570368A priority patent/JP7487342B2/ja
Priority to EP21809436.5A priority patent/EP4145961A4/en
Publication of WO2021233334A1 publication Critical patent/WO2021233334A1/zh

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/08Arrangements for injecting particles into orbits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
    • H05H3/02Molecular or atomic beam generation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/022Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/16Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08Ion sources; Ion guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3007Electron or ion-optical systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/024Moving components not otherwise provided for
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/061Construction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/31Processing objects on a macro-scale
    • H01J2237/3151Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/31701Ion implantation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/08Arrangements for injecting particles into orbits
    • H05H2007/081Sources
    • H05H2007/082Ion sources, e.g. ECR, duoplasmatron, PIG, laser sources

Definitions

  • the invention belongs to the field of mechanical processing equipment, and in particular relates to an anti-breakdown ion source discharge device.
  • the ion source device is a device that ionizes neutral atoms or molecules and draws ion beams from them.
  • the ion beams have accurate trajectory control, high ionization efficiency, good beam uniformity, wide energy adjustment range, and compatibility with reaction gases, etc. Advantages, widely used in ion beam etching, and its performance has a vital impact on the effect of ion implantation.
  • the working principle of the RF ion source device is to use radio frequency power to ionize gas to form plasma in the discharge chamber; the porous grid generates an accelerating electric field. After the ions are drawn and accelerated by the accelerating electric field, they are neutralized by a neutralizer to form a plasma beam.
  • the upper radio frequency column 8 and the radio frequency coil 3 are respectively electrically connected by long copper sheets; between the lower radio frequency column 9 and the radio frequency coil 3, the short copper sheets 4 are used for electrical connection . Because the copper sheet is thin and not fixed, the long copper sheet and the short copper sheet naturally hang below the discharge chamber 1 (see Figure 1), making the distance between the discharge chamber and the copper sheet uncontrollable. When it is relatively close, under the long-term action of the electric field, the discharge cavity will be broken down, which increases the production cost.
  • the purpose of the present invention is to provide an anti-breakdown ion source discharge device to prevent the discharge cavity from being broken down.
  • the present invention adopts the following technical solutions:
  • An anti-breakdown ion source discharge device comprising a discharge chamber in which an ion source chamber is sheathed outside the discharge chamber; an area for placing discharge components is enclosed between the discharge chamber and the ion source chamber;
  • the discharge member includes a radio frequency coil, a lower conductive connection piece and an upper conductive connection piece;
  • the radio frequency coil is sheathed outside the discharge chamber; the radio frequency coil is fixed on the coil support;
  • One end of the lower conductive connecting piece is connected to the tail end of the radio frequency coil through a lower connecting plate, and the other end of the lower conductive connecting piece is connected to a lower radio frequency column; the lower radio frequency column is fixed in the ion source chamber On the inner wall of the bottom;
  • One end of the upper conductive connector is connected to the end of the radio frequency coil through an upper connecting plate; the other end of the upper conductive connector is connected to an upper radio frequency column; the upper radio frequency column is fixed to the ion source chamber On the inner wall of the bottom; characterized in that it also includes:
  • the coil support is used to support the radio frequency coil, and the coil support is arranged along the circumferential direction of the coil support; the coil support is clamped on the inner wall of the bottom of the ion source chamber; the radio frequency coil passes through Supported by the coil; the upper conductive connecting piece starts from the outside of the radio frequency coil, sequentially bypasses the radio frequency coil and the coil support, and extends from the bottom of the coil support into the bottom of the discharge chamber ;
  • the upper insulating fixing block is used to fix the upper conductive connecting piece, and the upper insulating fixing block is sleeved on the upper conductive connecting piece and fixed on the bottom inner wall of the ion source chamber.
  • it further comprises a lower insulating fixing block, the lower insulating fixing block is sleeved on the lower conductive connecting piece and fixed on the inner wall of the bottom of the ion source chamber.
  • the lower conductive connecting member sequentially bypasses the radio frequency coil and the coil support from the outside of the radio frequency coil, and extends from the bottom of the coil support into the bottom of the discharge chamber.
  • the upper connecting plate is arranged horizontally; the upper connecting plate is provided with threaded holes for installing the upper conductive connector.
  • the upper conductive connector is L-shaped; the upper conductive connector includes a vertical section and a horizontal section connected to the vertical section; the vertical section is located between the radio frequency coil and the coil branch The exterior of the seat.
  • the coil support is movable along the axial direction of the ion source chamber; a moving groove is provided on the vertical section; an upper conductive moving part is installed in the moving groove; the upper conductive moving part Connect the upper connecting board.
  • one end of the upper conductive moving part connected to the upper connecting plate is a convex structure.
  • it further includes: a hydraulic cylinder fixed at the bottom of the outer side of the ion source chamber; the hydraulic rod of the hydraulic cylinder passes through the ion source chamber and is fixed on the coil support .
  • the fillet radius of the bottom of the discharge chamber is not less than 15 mm.
  • Both the upper conductive connector and the lower conductive connector are installed from the outside of the radio frequency coil. Compared with the installation from the inside of the radio frequency coil, the distance between the upper conductive connector and the bottom of the discharge chamber is increased, and the lower conductive connector The distance from the bottom of the discharge cell.
  • Figure 1 is a cross-sectional view of an ion source discharge device in the prior art
  • FIG. 2 is a perspective view of an ion source chamber and a discharge member in an anti-breakdown ion source discharge device according to an embodiment of the present invention
  • Figure 3 is a cross-sectional view of Figure 2;
  • Figure 4 is another perspective view of Figure 2;
  • Figure 5 (a) ⁇ (b) is a perspective view of the upper movable connector in Figure 1;
  • Figure 6 (a) is a cross-sectional view of the connecting end of the upper conductive moving part and the vertical section in an embodiment of the present invention
  • Figure 6 (b) ⁇ (c) are cross-sectional views of the upper conductive moving part in other embodiments of the present invention.
  • Figure 7 (a) a cross-sectional view of the connecting end of the vertical section and the conductive moving part in an embodiment of the present invention
  • Figure 7(b) is a cross-sectional view of the vertical section in other embodiments of the present invention.
  • an anti-breakdown ion source discharge device includes a discharge chamber 1, an ion source chamber 2, a discharge member, a coil support 10, an upper insulating fixing block 12, and a lower insulating fixing block 13.
  • the discharge chamber 1 is sheathed with an ion source chamber 2; the discharge chamber 1 and the ion source chamber 2 are surrounded by an area for placing discharge components.
  • the radius of the fillet at the bottom of the discharge chamber 1 is not less than 15mm.
  • the discharge member includes a radio frequency coil 3, a lower conductive connection piece 5, and an upper conductive connection piece 4; the radio frequency coil 3 is sleeved outside the discharge chamber 1; the radio frequency coil 3 is fixed on the coil support 11.
  • the coil support 10 is used to support the radio frequency coil 3.
  • the coil support 10 is arranged along the circumference of the coil support 11; the coil support 11 is clamped on the bottom inner wall of the ion source chamber 2; the radio frequency coil 3 passes through the coil support 10.
  • the coil support 11 is movably connected to the ion source chamber 2, that is, the coil support 11 can move axially along the ion source chamber 2 to adjust the distance between the radio frequency coil 3 and the Grid assembly 16. .
  • the coil support 11 can also be clamped or fixed on the inner wall of the bottom of the ion source chamber 2.
  • the material of the coil support 11 and the coil support 10 should be ceramic, quartz and other insulating materials.
  • the lower conductive connecting piece 5 starts from the outside of the radio frequency coil 3, bypasses the radio frequency coil 3 and the coil support 11 in turn, and extends from the bottom of the coil support 11 into the bottom of the discharge chamber 1.
  • the lower conductive connector 5 and the lower connecting plate 7 are connected in a threaded manner; the lower connecting plate 7 and the tail end of the radio frequency coil 3 are connected in a welding manner.
  • the upper conductive connector 4 starts from the outside of the radio frequency coil 3, bypasses the radio frequency coil 3 and the coil support 11 in turn, and extends from the bottom of the coil support 11 into the bottom of the discharge chamber 1.
  • the upper conductive connector 4 and the upper connecting plate 6 are connected in a threaded manner; the upper connecting plate 6 and the end of the radio frequency coil 3 are connected in a welding manner.
  • the upper insulating fixing block 12 is used to fix the upper conductive connecting piece 4, and the upper insulating fixing block 12 is sleeved on the upper conductive connecting piece 4 and fixed on the bottom inner wall of the ion source chamber 2.
  • the lower insulating fixing block 13 is used to fix the lower conductive connecting piece 5, and the lower insulating fixing block 13 is sleeved on the lower conductive connecting piece 5 and fixed on the bottom inner wall of the ion source chamber 2.
  • the upper connecting plate 6 is arranged horizontally; the upper connecting plate 6 is provided with threaded holes for installing the upper conductive connector 4.
  • the lower connecting plate 7 is arranged horizontally; the lower connecting plate 7 is provided with threaded holes for installing the lower conductive connector 5. Both the upper connecting plate 6 and the lower connecting plate 7 are non-conductive.
  • the radio frequency coil 3 when the radio frequency performance is debugged, the radio frequency coil 3 needs to be moved, the coordinates of the upper radio frequency column 8 and the lower radio frequency column 9 remain unchanged, and the position coordinates of the radio frequency coil 3 need to be changed. Therefore, it is used to connect the radio frequency
  • the length of the long copper sheet (analogous upper conductive connector 4) of the coil 3 and the upper radio frequency column 8 and the short copper sheet (analog lower conductive connector 5) used to connect the radio frequency coil 3 and the lower radio frequency column 9 needs to be changed, while the length of the long copper
  • the number of sheets and short copper sheets is limited. Therefore, when the radio frequency coil 3 is connected to the upper radio frequency column 8 and the lower radio frequency column 9, the length of the artificial copper sheet needs to be replaced, which is troublesome to operate.
  • the upper conductive connector 4 is L-shaped; the upper conductive connector 4 includes a vertical section 42 and a horizontal section 41 connected to the vertical section 42; the vertical section 42 is located at the radio frequency The outside of the coil 3 and the coil support 11.
  • the coil support 11 is movably connected to the ion source chamber 2, that is, the coil support 11 can move axially along the ion source chamber 2, so as to adjust the distance between the radio frequency coil 3 and the Grid assembly 16. .
  • the coil support 11 can move along the axial direction of the ion source chamber 2; a moving groove is opened on the vertical section 42; an upper conductive moving part 14 is installed in the moving groove; the upper conductive moving part 14 is connected to the upper connecting plate 6.
  • a hydraulic cylinder 15 is added to the bottom of the ion source chamber 2.
  • the hydraulic cylinder 15 is fixed at the bottom of the outer side of the ion source chamber 2; the hydraulic rod of the hydraulic cylinder 15 passes through the ion source chamber 2 and is fixed.
  • the radio frequency coil 3 moves axially along the discharge chamber 1 with the hydraulic cylinder 15, and the upper conductive moving part 14 is driven by the upper connecting plate 6 along the upper conductive connecting part. 4 slides in the groove on the vertical section 42 of the lower conductive moving part, driven by the lower connecting plate 7, and slides in the groove on the vertical section 42 of the lower conductive connecting part 5; therefore, the radio frequency coil 3 can be effectively adjusted with
  • the distance between the Grid components 16 avoids the disadvantages of manual adjustment of the disassembly and assembly machine.
  • the number of hydraulic cylinders 15 is set to 2, and they are arranged symmetrically.
  • the end of the upper conductive moving member 14 connected to the upper connecting plate 6 is a convex structure, that is, a connecting protrusion 141, and the upper conductive connecting member 4 has a convex groove structure.
  • the contact area between the upper conductive moving part 14 and the upper conductive connecting part 4 can be effectively increased to avoid the problem of poor contact; as shown in Figure 6(b), in this embodiment
  • the cross section of the upper conductive moving part 14 is a circular protruding key groove
  • the cross section of the upper conductive connecting part 4 is a circular groove, as shown in FIG. 7(b)
  • the cross-sectional view of the upper conductive movable member 14 is shown in FIG. 6(c).

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

本发明提出了一种防击穿离子源放电装置,包括放电室、线圈支撑、上绝缘固定块、放电构件和离子源腔室,放电构件包括一射频线圈、下导电连接件和上导电连接件;射频线圈固定在线圈支座上;线圈支座卡设在离子源腔室的底部内壁上;线圈支撑沿线圈支座的周向设置;射频线圈穿过线圈支撑;上导电连接件自射频线圈的外部,依次绕过射频线圈和线圈支座,并自线圈支座的底部伸入放电室底部;上绝缘固定块套设在上导电连接件上并固定在离子源腔室的底部内壁上。本发明通过增大上导电连接件和放电室底部的距离、下导电连接件和放电室底部的距离,解决了放电室被击穿的现象。

Description

一种防击穿离子源放电装置 技术领域
本发明属于机械加工设备领域,尤其涉及一种防击穿离子源放电装置。
背景技术
离子源装置是使中性原子或分子电离,并从中引出离子束流的装置,离子束流因其轨迹控制准确、电离效率高、束流均匀性好、能量调节范围宽,与反应气体兼容等优点,广泛应用于离子束刻蚀,其性能优劣对离子注入的效果有至关重要的影响。RF离子源装置的工作原理是利用射频电源将气体电离,在放电腔室内形成等离子体;多孔栅极产生加速电场,离子经加速电场引出、加速后,经中和器中和,形成等离子束。KRI所生产的RF离子源装置内,在上射频柱8与射频线圈3之间,分别采用长铜片进行电连接;在下射频柱9与射频线圈3之间,采用短铜片4进行电连接。由于铜片较薄,且无固定,长铜片和短铜片自然垂于放电室1的下方(见图1),使得放电室与铜片之间的距离无法控制,当两者之间距离较近时,在电场的长期作用下,会导致放电腔被击穿,增加了生产成本。
发明内容
本发明的目的在于提供一种防击穿离子源放电装置,以防止放电腔被击穿。为实现上述目的,本发明采用如下技术方案:
一种防击穿离子源放电装置,包括放电室,所述放电室外套设一离子源腔室;所述放电室和所述离子源腔室之间围成用于放置放电构件的区域;
所述放电构件包括一射频线圈、下导电连接件和上导电连接件;
所述射频线圈套设在所述放电室外;所述射频线圈固定在线圈支座上;
所述下导电连接件的一端通过下连接板与所述射频线圈的尾端连接,所述下导电连接件的另一端与下射频柱连接;所述下射频柱固定在所述离子源腔室的底部内壁上;
所述上导电连接件的一端通过上连接板与所述射频线圈的端头连接;所述上导电连接件的另一端与上射频柱连接;所述上射频柱固定在所述离子源腔室的底部内壁上;其特征在于,还包括:
线圈支撑,用于支撑所述射频线圈,所述线圈支撑沿所述线圈支座的周向设置;所述线圈支座卡设在所述离子源腔室的底部内壁上;所述射频线圈穿过所述线圈支撑;所述上导电连接件自所述射频线圈的外部,依次绕过所述射频线圈和所述线圈支座,并自所述线圈支座的底部伸入所述放电室底部;
上绝缘固定块,用于固定所述上导电连接件,所述上绝缘固定块套设在所述上导电连接件上并固定在所述离子源腔室的底部内壁上。
优选地,进一步包括一下绝缘固定块,所述下绝缘固定块套设在所述下导电连接件上并固定在所述离子源腔室的底部内壁上。
优选地,所述下导电连接件自所述射频线圈的外部,依次绕过所述射频线圈和所述线圈支座,并自所述线圈支座的底部伸入所述放电室底部。
优选地,所述上连接板水平设置;所述上连接板上开设用于安装所述上导电连接件的螺纹孔。
优选地,所述上导电连接件为L形;所述上导电连接件包括竖直段和与所述竖直段连接的水平段;所述竖直段位于所述射频线圈和所述线圈支座的外部。
优选地,所述线圈支座可沿所述离子源腔室的轴向移动;所述竖直段上开设一移动槽;所述移动槽内安装一上导电移动件;所述上导电移动件连接所述上连接板。
优选地,所述上导电移动件与上连接板连接的一端为凸形结构。
优选地,进一步包括:一液压缸,所述液压缸固定在所述离子源腔室的外侧底部;所述液压缸的液压杆穿过所述离子源腔室并固定在所述线圈支座上。
优选地,所述放电室底部圆角半径不小于15mm。
与现有技术相比,本发明的优点为:
(1)通过上绝缘固定块将上导电连接件固定在离子源腔室的底部、下绝缘固定块将下导电连接件固定在离子源腔室的底部,避免了上导电连接件和下导电连接件的下垂现象,增大了其与放电室底部之间的距离。
(2)上导电连接件和下导电连接件均从射频线圈的外侧安装,相比于从射频线圈的内侧安装,增大了上导电连接件和放电室底部之间的距离、下导电连接件和放电室底部之间的距离。
(3)加大放电室底部的圆角半径可有效拉大放电室与上导电连接件之间的距离L、放电室与下导电连接件之间的距离L。
(4)在进行射频性能调试时,在液压缸作用下,射频线圈随液压缸,沿放电室作轴向运动,上导电移动件在上连接板的带动下,沿上导电连接件的竖直段上的槽内滑动,下导电移动件在下连接板的带动下,沿下导电连接件的竖直段上的槽内滑动;因此,可以有效调节射频线圈与Grid组件之间的距离,避免拆装机台手工调整的弊端。
附图说明
图1为现有技术中离子源放电装置的剖视图;
图2为本发明一实施例的防击穿离子源放电装置中离子源腔室和放电构件的立体图;
图3为图2的剖视图;
图4为图2的又一立体图;
图5(a)~(b)为图1中上移动连接件的立体图;
图6(a)位本发明一实施例中上导电移动件与竖直段连接端的横截面图;
图6(b)~(c)为本发明其他实施例中上导电移动件的横截面图;
图7(a)本发明一实施例中竖直段与导电移动件连接端的横截面图;
图7(b)为本发明其他实施例中竖直段的横截面图。
其中,1-放电室,2-离子源腔室,3-射频线圈,4-上导电连接件,41-水平段,42-竖直段,5-下导电连接件,6-上连接板,7-下连接板,8-上射频柱,9-下射频柱,10-线圈支撑,11-线圈支座,12-上绝缘固定块,13-下绝缘固定块,14-上导电移动件,141-连接凸起,15-液压缸,16-Grid组件。
具体实施方式
下面将结合示意图对本发明进行更详细的描述,其中表示了本发明的优选实施例,应该理解本领域技术人员可以修改在此描述的本发明,而仍然实现本发明的有利效果。因此,下列描述应当被理解为对于本领域技术人员的广泛知道,而并不作为对本发明的限制。
本实施例中,在现有技术(如图1)的基础上,采取如下措施以增大上导电连接件4和放电室1底部的距离、下导电连接件5和放电室1底部的距离,具体为:1)优化线圈支座11的结构;2)增设上绝缘固定块12、下绝缘固定块13;3)同时改变上导电连接件4、下导电连接件5的安装方式;4)增大放电室1底部圆角半径。
如图2~4所示,一种防击穿离子源放电装置,包括放电室1、离子源腔室2、放电构件、线圈支撑10、上绝缘固定块12和下绝缘固定块13。
放电室1外套设一离子源腔室2;放电室1和离子源腔室2之间围成用于放置放电构件的区域。放电室1底部圆角半径不小于15mm。
放电构件包括一射频线圈3、下导电连接件5和上导电连接件4;射频线圈3套设在放电室1外;射频线圈3固定在线圈支座11上。
线圈支撑10,用于支撑射频线圈3,线圈支撑10沿线圈支座11的周向设置;线圈支座11卡设在离子源腔室2的底部内壁上;射频线圈3穿过线圈支撑10。在本实施例中,线圈支座11与离子源腔室2活动连接,即线圈支座11可沿离子源腔室2作轴向运动,以实现 射频线圈3和Grid组件16之间的距离调节。在本实施例以外的其他实施例中,如无需射频线圈3和Grid组件16之间的距离,线圈支座11也可以卡设或者固定在离子源腔室2的底部内壁上。为避免射频线圈3其他部位导电,所述线圈支座11和线圈支撑10的材质应选择陶瓷、石英等绝缘材质。
下导电连接件5的一端通过下连接板7与射频线圈3的尾端连接,下导电连接件5的另一端与下射频柱9连接;下射频柱9固定在离子源腔室2的底部内壁上。下导电连接件5自射频线圈3的外部,依次绕过射频线圈3和线圈支座11,并自线圈支座11的底部伸入放电室1底部。在本实施例中,下导电连接件5和下连接板7之间采用螺纹方式进行连接;下连接板7与射频线圈3的尾端之间采用焊接的方式。
上导电连接件4的一端通过上连接板6与射频线圈3的端头连接;上导电连接件4的另一端与上射频柱8连接;上射频柱8固定在离子源腔室2的底部内壁上。上导电连接件4自射频线圈3的外部,依次绕过射频线圈3和线圈支座11,并自线圈支座11的底部伸入放电室1底部。在本实施例中,上导电连接件4和上连接板6之间采用螺纹方式进行连接;上连接板6与射频线圈3的端头之间采用焊接的方式。
上绝缘固定块12,用于固定上导电连接件4,上绝缘固定块12套设在上导电连接件4上并固定在离子源腔室2的底部内壁上。
下绝缘固定块13,用于固定下导电连接件5,下绝缘固定块13套设在下导电连接件5上并固定在离子源腔室2的底部内壁上。
优选地,上连接板6水平设置;上连接板6上开设用于安装上导电连接件4的螺纹孔。下连接板7水平设置;下连接板7上开设用于安装下导电连接件5的螺纹孔。上连接板6和下连接板7均不导电。
现有技术中,在进行射频性能调试时,需要对射频线圈3进行移动,上射频柱8和下射频柱9的坐标不变,射频线圈3的位置坐标需要改变,因此,而用于连接射频线圈3和上射频柱8的长铜片(类比上导电连接件4)、用于连接射频线圈3和下射频柱9的短铜片(类比下导电连接件5)长度需要改变,而长铜片和短铜片有限,因此,在射频线圈3与上射频柱8、下射频柱9进行连接时,需要更换人工铜片长度,操作麻烦。
在本实施例中,通过增设液压缸15、设置上导电连接件4和下导电连接件5的长度可调节,实现了射频线圈3和Grid组件16之间距离的自动调节。具体方案如下:
如图5(a)~(b)所示,上导电连接件4为L形;上导电连接件4包括竖直段42和与竖直段42连接的水平段41;竖直段42位于射频线圈3和线圈支座11的外部。在本实施例中, 线圈支座11与离子源腔室2活动连接,即线圈支座11可沿离子源腔室2作轴向运动,以实现射频线圈3和Grid组件16之间的距离调节。即线圈支座11可沿离子源腔室2的轴向移动;竖直段42上开设一移动槽;移动槽内安装一上导电移动件14;上导电移动件14连接上连接板6。如图6所示,即在离子源腔室2的底部增设一液压缸15,液压缸15固定在离子源腔室2的外侧底部;液压缸15的液压杆穿过离子源腔室2并固定在线圈支座11上。
在进行射频性能调试时,在液压缸15作用下,射频线圈3随液压缸15,沿放电室1作轴向运动,上导电移动件14在上连接板6的带动下,沿上导电连接件4的竖直段42上的槽内滑动,下导电移动件在下连接板7的带动下,沿下导电连接件5的竖直段42上的槽内滑动;因此,可以有效调节射频线圈3与Grid组件16之间的距离,避免拆装机台手工调整的弊端。
在本实施例中,液压缸15的的数量设置为2,且对称设置。
如图6(a)所示,在本实施例中,上导电移动件14与上连接板6连接的一端为凸形结构,即为连接凸起141,上导电连接件4呈凸形槽结构,如图7(a)所示,可有效增大上导电移动件14和上导电连接件4之间的接触面积,避免存在接触不良的问题;如图6(b)所示,在本实施例以外的其他实施例中,上导电移动件14的横截面为一圆形凸出键槽,上导电连接件4的横截面为圆形槽时,如图7(b)所示,也可以满足相对滑动,接触性良好。在本实施例以外的其他实施例中,上导电移动件14的横截面图如图6(c)所示。
上述仅为本发明的优选实施例而已,并不对本发明起到任何限制作用。任何所属技术领域的技术人员,在不脱离本发明的技术方案的范围内,对本发明揭露的技术方案和技术内容做任何形式的等同替换或修改等变动,均属未脱离本发明的技术方案的内容,仍属于本发明的保护范围之内。

Claims (9)

  1. 一种防击穿离子源放电装置,包括放电室,所述放电室外套设一离子源腔室;所述放电室和所述离子源腔室之间围成用于放置放电构件的区域;
    所述放电构件包括一射频线圈、下导电连接件和上导电连接件;
    所述射频线圈套设在所述放电室外;所述射频线圈固定在线圈支座上;
    所述下导电连接件的一端通过下连接板与所述射频线圈的尾端连接,所述下导电连接件的另一端与下射频柱连接;所述下射频柱固定在所述离子源腔室的底部内壁上;
    所述上导电连接件的一端通过上连接板与所述射频线圈的端头连接;所述上导电连接件的另一端与上射频柱连接;所述上射频柱固定在所述离子源腔室的底部内壁上;其特征在于,还包括:
    线圈支撑,用于支撑所述射频线圈,所述线圈支撑沿所述线圈支座的周向设置;所述线圈支座卡设在所述离子源腔室的底部内壁上;所述射频线圈穿过所述线圈支撑;所述上导电连接件自所述射频线圈的外部,依次绕过所述射频线圈和所述线圈支座,并自所述线圈支座的底部伸入所述放电室底部;
    上绝缘固定块,用于固定所述上导电连接件,所述上绝缘固定块套设在所述上导电连接件上并固定在所述离子源腔室的底部内壁上。
  2. 根据权利要求1所述的防击穿离子源放电装置,其特征在于,进一步包括一下绝缘固定块,所述下绝缘固定块套设在所述下导电连接件上并固定在所述离子源腔室的底部内壁上。
  3. 根据权利要求2所述的防击穿离子源放电装置,其特征在于,所述下导电连接件自所述射频线圈的外部,依次绕过所述射频线圈和所述线圈支座,并自所述线圈支座的底部伸入所述放电室底部。
  4. 根据权利要求3所述的防击穿离子源放电装置,其特征在于,所述上连接板水平设置;所述上连接板上开设用于安装所述上导电连接件的螺纹孔。
  5. 根据权利要求3所述的防击穿离子源放电装置,其特征在于,所述上导电连接件为L形;所述上导电连接件包括竖直段和与所述竖直段连接的水平段;所述竖直段位于所述射频线圈和所述线圈支座的外部。
  6. 根据权利要求5所述的防击穿离子源放电装置,其特征在于,所述线圈支座可沿所述离子源腔室的轴向移动;所述竖直段上开设一移动槽;所述移动槽内安装一上导电移动件;所述上导电移动件连接所述上连接板。
  7. 根据权利要求6所述的防击穿离子源放电装置,其特征在于,所述上导电移动件与上连接板连接的一端为凸形结构。
  8. 根据权利要求6所述的防击穿离子源放电装置,其特征在于,进一步包括:一液压缸,所述液压缸固定在所述离子源腔室的外侧底部;所述液压缸的液压杆穿过所述离子源腔室并固定在所述线圈支座上。
  9. 根据权利要求1所述的防击穿离子源放电装置,其特征在于,所述放电室底部圆角半径不小于15mm。
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