JP2015023250A - 固体撮像素子及びその駆動方法、並びに電子機器 - Google Patents

固体撮像素子及びその駆動方法、並びに電子機器 Download PDF

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Publication number
JP2015023250A
JP2015023250A JP2013152895A JP2013152895A JP2015023250A JP 2015023250 A JP2015023250 A JP 2015023250A JP 2013152895 A JP2013152895 A JP 2013152895A JP 2013152895 A JP2013152895 A JP 2013152895A JP 2015023250 A JP2015023250 A JP 2015023250A
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region
charge
transfer gate
photoelectric conversion
unit
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JP2013152895A
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English (en)
Japanese (ja)
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JP2015023250A5 (OSRAM
Inventor
浩樹 萩原
Hiroki Hagiwara
浩樹 萩原
貴宏 戸谷
Takahiro Toya
貴宏 戸谷
真也 沼津
Shinya Numazu
真也 沼津
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Sony Corp
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Sony Corp
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Priority to JP2013152895A priority Critical patent/JP2015023250A/ja
Priority to US14/332,543 priority patent/US9571772B2/en
Priority to CN201410337829.0A priority patent/CN104349077B/zh
Publication of JP2015023250A publication Critical patent/JP2015023250A/ja
Publication of JP2015023250A5 publication Critical patent/JP2015023250A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013152895A 2013-07-23 2013-07-23 固体撮像素子及びその駆動方法、並びに電子機器 Pending JP2015023250A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013152895A JP2015023250A (ja) 2013-07-23 2013-07-23 固体撮像素子及びその駆動方法、並びに電子機器
US14/332,543 US9571772B2 (en) 2013-07-23 2014-07-16 Solid-state imaging device, driving method and electronic apparatus with electric charge transfer using an intermediate potential
CN201410337829.0A CN104349077B (zh) 2013-07-23 2014-07-16 固态成像装置、其驱动方法和电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013152895A JP2015023250A (ja) 2013-07-23 2013-07-23 固体撮像素子及びその駆動方法、並びに電子機器

Publications (2)

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JP2015023250A true JP2015023250A (ja) 2015-02-02
JP2015023250A5 JP2015023250A5 (OSRAM) 2016-03-24

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JP2013152895A Pending JP2015023250A (ja) 2013-07-23 2013-07-23 固体撮像素子及びその駆動方法、並びに電子機器

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Country Link
US (1) US9571772B2 (OSRAM)
JP (1) JP2015023250A (OSRAM)
CN (1) CN104349077B (OSRAM)

Cited By (9)

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WO2017126232A1 (ja) * 2016-01-21 2017-07-27 ソニー株式会社 固体撮像素子および撮像装置
WO2018110258A1 (ja) * 2016-12-15 2018-06-21 パナソニック・タワージャズセミコンダクター株式会社 固体撮像素子
US10014334B2 (en) 2016-03-08 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Imaging device, module, and electronic device
WO2019225071A1 (ja) * 2018-05-23 2019-11-28 ソニー株式会社 信号処理装置及び信号処理方法、並びに撮像装置
DE112018001158T5 (de) 2017-03-06 2019-12-05 Sony Semiconductor Solutions Corporation Festkörper-bildgebungsvorrichtung und herstellungsverfahren für festkörperbildgebungsvorrichtung
TWI682527B (zh) * 2015-09-16 2020-01-11 韓商愛思開海力士有限公司 包括垂直傳輸門的圖像感測器
WO2021199769A1 (ja) * 2020-03-30 2021-10-07 ソニーセミコンダクタソリューションズ株式会社 電子機器
WO2022124092A1 (ja) * 2020-12-08 2022-06-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置及び固体撮像素子の制御方法
WO2023042498A1 (ja) * 2021-09-17 2023-03-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、及び撮像装置

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JP6141160B2 (ja) * 2013-09-25 2017-06-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその動作方法、並びに電子機器およびその動作方法
US9521351B1 (en) 2015-09-21 2016-12-13 Rambus Inc. Fractional-readout oversampled image sensor
CN107018341B (zh) * 2017-04-14 2020-04-03 中国科学院长春光学精密机械与物理研究所 一种tdi ccd图像传感器以及驱动方法
CN108417593B (zh) * 2018-02-27 2020-11-27 上海集成电路研发中心有限公司 图像传感器、像素结构及其控制方法
US20200099878A1 (en) * 2018-09-25 2020-03-26 Omnivision Technologies, Inc. Cmos image sensor with multiple stage transfer gate
CN118610222B (zh) * 2024-08-01 2024-12-03 合肥海图微电子有限公司 一种图像传感器及其制备方法

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JP4403687B2 (ja) * 2002-09-18 2010-01-27 ソニー株式会社 固体撮像装置およびその駆動制御方法
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
US8026966B2 (en) * 2006-08-29 2011-09-27 Micron Technology, Inc. Method, apparatus and system providing a storage gate pixel with high dynamic range
JP5568880B2 (ja) * 2008-04-03 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
JP5258551B2 (ja) * 2008-12-26 2013-08-07 キヤノン株式会社 固体撮像装置、その駆動方法及び撮像システム
JP5516960B2 (ja) 2010-04-02 2014-06-11 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、および、電子機器
JP5673063B2 (ja) 2010-12-15 2015-02-18 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器

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JP2003087663A (ja) * 2001-06-28 2003-03-20 Victor Co Of Japan Ltd 固体撮像装置
JP2008104199A (ja) * 2006-10-20 2008-05-01 Korea Electronics Telecommun 低電圧用イメージセンサ及びイメージセンサのトランスファートランジスタ駆動方法
JP2009054870A (ja) * 2007-08-28 2009-03-12 Sanyo Electric Co Ltd 撮像装置
US20100013973A1 (en) * 2008-07-16 2010-01-21 International Business Machines Corporation Pixel sensor cell with frame storage capability
JP2011216672A (ja) * 2010-03-31 2011-10-27 Sony Corp 固体撮像装置、固体撮像装置の製造方法、および電子機器

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI682527B (zh) * 2015-09-16 2020-01-11 韓商愛思開海力士有限公司 包括垂直傳輸門的圖像感測器
US11032499B2 (en) 2016-01-21 2021-06-08 Sony Corporation Solid-state image sensor and imaging apparatus
US10469783B2 (en) 2016-01-21 2019-11-05 Sony Corporation Solid-state image sensor and imaging apparatus
WO2017126232A1 (ja) * 2016-01-21 2017-07-27 ソニー株式会社 固体撮像素子および撮像装置
US10014334B2 (en) 2016-03-08 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Imaging device, module, and electronic device
US10256265B2 (en) 2016-03-08 2019-04-09 Semiconductor Energy Laboratory Co., Ltd. Imaging device, module, and electronic device
US11012645B2 (en) 2016-12-15 2021-05-18 Tower Partners Semicoductor Co., Ltd. Solid-state image sensor
WO2018110258A1 (ja) * 2016-12-15 2018-06-21 パナソニック・タワージャズセミコンダクター株式会社 固体撮像素子
DE112018001158T5 (de) 2017-03-06 2019-12-05 Sony Semiconductor Solutions Corporation Festkörper-bildgebungsvorrichtung und herstellungsverfahren für festkörperbildgebungsvorrichtung
WO2019225071A1 (ja) * 2018-05-23 2019-11-28 ソニー株式会社 信号処理装置及び信号処理方法、並びに撮像装置
US11297252B2 (en) 2018-05-23 2022-04-05 Sony Corporation Signal processing apparatus and signal processing method, and imaging device
WO2021199769A1 (ja) * 2020-03-30 2021-10-07 ソニーセミコンダクタソリューションズ株式会社 電子機器
JPWO2021199769A1 (OSRAM) * 2020-03-30 2021-10-07
US12131574B2 (en) 2020-03-30 2024-10-29 Sony Semiconductor Solutions Corporation Electronic equipment
WO2022124092A1 (ja) * 2020-12-08 2022-06-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置及び固体撮像素子の制御方法
US12484324B2 (en) 2020-12-08 2025-11-25 Sony Semiconductor Solutions Corporation Solid-state imaging element, imaging device, and method of controlling solid-state imaging element
WO2023042498A1 (ja) * 2021-09-17 2023-03-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、及び撮像装置

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US20150028189A1 (en) 2015-01-29
CN104349077B (zh) 2019-06-14
US9571772B2 (en) 2017-02-14
CN104349077A (zh) 2015-02-11

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