JP2015023250A5 - - Google Patents

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Publication number
JP2015023250A5
JP2015023250A5 JP2013152895A JP2013152895A JP2015023250A5 JP 2015023250 A5 JP2015023250 A5 JP 2015023250A5 JP 2013152895 A JP2013152895 A JP 2013152895A JP 2013152895 A JP2013152895 A JP 2013152895A JP 2015023250 A5 JP2015023250 A5 JP 2015023250A5
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JP
Japan
Prior art keywords
region
transfer gate
charge
holding
photoelectric conversion
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Pending
Application number
JP2013152895A
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English (en)
Japanese (ja)
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JP2015023250A (ja
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Priority to JP2013152895A priority Critical patent/JP2015023250A/ja
Priority claimed from JP2013152895A external-priority patent/JP2015023250A/ja
Priority to US14/332,543 priority patent/US9571772B2/en
Priority to CN201410337829.0A priority patent/CN104349077B/zh
Publication of JP2015023250A publication Critical patent/JP2015023250A/ja
Publication of JP2015023250A5 publication Critical patent/JP2015023250A5/ja
Pending legal-status Critical Current

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JP2013152895A 2013-07-23 2013-07-23 固体撮像素子及びその駆動方法、並びに電子機器 Pending JP2015023250A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013152895A JP2015023250A (ja) 2013-07-23 2013-07-23 固体撮像素子及びその駆動方法、並びに電子機器
US14/332,543 US9571772B2 (en) 2013-07-23 2014-07-16 Solid-state imaging device, driving method and electronic apparatus with electric charge transfer using an intermediate potential
CN201410337829.0A CN104349077B (zh) 2013-07-23 2014-07-16 固态成像装置、其驱动方法和电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013152895A JP2015023250A (ja) 2013-07-23 2013-07-23 固体撮像素子及びその駆動方法、並びに電子機器

Publications (2)

Publication Number Publication Date
JP2015023250A JP2015023250A (ja) 2015-02-02
JP2015023250A5 true JP2015023250A5 (OSRAM) 2016-03-24

Family

ID=52389687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013152895A Pending JP2015023250A (ja) 2013-07-23 2013-07-23 固体撮像素子及びその駆動方法、並びに電子機器

Country Status (3)

Country Link
US (1) US9571772B2 (OSRAM)
JP (1) JP2015023250A (OSRAM)
CN (1) CN104349077B (OSRAM)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6141160B2 (ja) 2013-09-25 2017-06-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその動作方法、並びに電子機器およびその動作方法
KR102414038B1 (ko) * 2015-09-16 2022-06-30 에스케이하이닉스 주식회사 수직 전송 게이트를 갖는 이미지 센서 및 그 제조방법
US9521351B1 (en) 2015-09-21 2016-12-13 Rambus Inc. Fractional-readout oversampled image sensor
JP2017130567A (ja) * 2016-01-21 2017-07-27 ソニー株式会社 固体撮像素子および撮像装置
JP6904730B2 (ja) 2016-03-08 2021-07-21 株式会社半導体エネルギー研究所 撮像装置
JP6743181B2 (ja) * 2016-12-15 2020-08-19 タワー パートナーズ セミコンダクター株式会社 固体撮像素子
JP2018148039A (ja) 2017-03-06 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の製造方法
CN107018341B (zh) * 2017-04-14 2020-04-03 中国科学院长春光学精密机械与物理研究所 一种tdi ccd图像传感器以及驱动方法
CN108417593B (zh) * 2018-02-27 2020-11-27 上海集成电路研发中心有限公司 图像传感器、像素结构及其控制方法
WO2019225071A1 (ja) * 2018-05-23 2019-11-28 ソニー株式会社 信号処理装置及び信号処理方法、並びに撮像装置
US20200099878A1 (en) * 2018-09-25 2020-03-26 Omnivision Technologies, Inc. Cmos image sensor with multiple stage transfer gate
WO2021199769A1 (ja) * 2020-03-30 2021-10-07 ソニーセミコンダクタソリューションズ株式会社 電子機器
US12484324B2 (en) 2020-12-08 2025-11-25 Sony Semiconductor Solutions Corporation Solid-state imaging element, imaging device, and method of controlling solid-state imaging element
US20240380998A1 (en) * 2021-09-17 2024-11-14 Sony Semiconductor Solutions Corporation Solid-state imaging element and imaging device
CN118610222B (zh) * 2024-08-01 2024-12-03 合肥海图微电子有限公司 一种图像传感器及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4003549B2 (ja) * 2001-06-28 2007-11-07 日本ビクター株式会社 固体撮像装置
JP4403687B2 (ja) * 2002-09-18 2010-01-27 ソニー株式会社 固体撮像装置およびその駆動制御方法
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
US8026966B2 (en) * 2006-08-29 2011-09-27 Micron Technology, Inc. Method, apparatus and system providing a storage gate pixel with high dynamic range
US7829834B2 (en) * 2006-10-20 2010-11-09 Electronics And Telecommunications Research Institute Low-voltage image sensor having multiple gates between a photodiode and a diffusion node for suppressing dark current and method of driving transfer transistor thereof
JP2009054870A (ja) * 2007-08-28 2009-03-12 Sanyo Electric Co Ltd 撮像装置
JP5568880B2 (ja) * 2008-04-03 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
US8009216B2 (en) * 2008-07-16 2011-08-30 International Business Machines Corporation Pixel sensor cell with frame storage capability
JP5258551B2 (ja) * 2008-12-26 2013-08-07 キヤノン株式会社 固体撮像装置、その駆動方法及び撮像システム
JP5671830B2 (ja) * 2010-03-31 2015-02-18 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、および電子機器
JP5516960B2 (ja) 2010-04-02 2014-06-11 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、および、電子機器
JP5673063B2 (ja) * 2010-12-15 2015-02-18 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器

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