JP2014532987A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2014532987A5 JP2014532987A5 JP2014538831A JP2014538831A JP2014532987A5 JP 2014532987 A5 JP2014532987 A5 JP 2014532987A5 JP 2014538831 A JP2014538831 A JP 2014538831A JP 2014538831 A JP2014538831 A JP 2014538831A JP 2014532987 A5 JP2014532987 A5 JP 2014532987A5
- Authority
- JP
- Japan
- Prior art keywords
- mhz
- power
- exhaust
- coupled
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161552749P | 2011-10-28 | 2011-10-28 | |
| US61/552,749 | 2011-10-28 | ||
| US13/646,069 | 2012-10-05 | ||
| US13/646,069 US9947559B2 (en) | 2011-10-28 | 2012-10-05 | Thermal management of edge ring in semiconductor processing |
| PCT/US2012/060313 WO2013062804A1 (en) | 2011-10-28 | 2012-10-15 | Thermal management of edge ring in semiconductor processing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014532987A JP2014532987A (ja) | 2014-12-08 |
| JP2014532987A5 true JP2014532987A5 (enExample) | 2015-11-19 |
| JP6268095B2 JP6268095B2 (ja) | 2018-01-24 |
Family
ID=48168334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014538831A Active JP6268095B2 (ja) | 2011-10-28 | 2012-10-15 | 半導体処理におけるエッジリングの熱管理 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9947559B2 (enExample) |
| JP (1) | JP6268095B2 (enExample) |
| KR (1) | KR102042612B1 (enExample) |
| CN (1) | CN103890917B (enExample) |
| TW (1) | TWI618138B (enExample) |
| WO (1) | WO2013062804A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9947559B2 (en) | 2011-10-28 | 2018-04-17 | Applied Materials, Inc. | Thermal management of edge ring in semiconductor processing |
| US10727092B2 (en) * | 2012-10-17 | 2020-07-28 | Applied Materials, Inc. | Heated substrate support ring |
| US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
| US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| ES2931905T3 (es) | 2015-03-31 | 2023-01-04 | Koki Holdings Co Ltd | Herramienta eléctrica |
| US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| CN110468377B (zh) * | 2018-05-11 | 2022-04-22 | 北京北方华创微电子装备有限公司 | 腔室及半导体加工设备 |
| JP2021027152A (ja) * | 2019-08-05 | 2021-02-22 | キオクシア株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| CN115440558A (zh) | 2021-06-03 | 2022-12-06 | 长鑫存储技术有限公司 | 半导体蚀刻设备 |
| KR20230122477A (ko) * | 2022-02-14 | 2023-08-22 | 주성엔지니어링(주) | 기판 처리 장치 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6887340B2 (en) * | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
| JP3908678B2 (ja) | 2003-02-28 | 2007-04-25 | 株式会社日立ハイテクノロジーズ | ウエハ処理方法 |
| US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| US7244336B2 (en) * | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
| US20050133165A1 (en) * | 2003-12-23 | 2005-06-23 | Taiwan Semiconductor Manufacturing Co. | Apparatus for the prevention of arcing in a CVD-TiN chamber |
| US7713431B2 (en) * | 2004-06-10 | 2010-05-11 | Tokyo Electron Limited | Plasma processing method |
| KR20070018404A (ko) | 2005-08-10 | 2007-02-14 | 삼성전자주식회사 | 플라즈마 식각 장치 |
| JP2007258500A (ja) | 2006-03-24 | 2007-10-04 | Hitachi High-Technologies Corp | 基板支持装置 |
| US8941037B2 (en) * | 2006-12-25 | 2015-01-27 | Tokyo Electron Limited | Substrate processing apparatus, focus ring heating method, and substrate processing method |
| WO2009107718A1 (ja) * | 2008-02-27 | 2009-09-03 | 東京エレクトロン株式会社 | プラズマエッチング処理装置およびプラズマエッチング処理方法 |
| JP5325457B2 (ja) | 2008-05-22 | 2013-10-23 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8449679B2 (en) * | 2008-08-15 | 2013-05-28 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
| US20110240598A1 (en) | 2008-11-18 | 2011-10-06 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP5657262B2 (ja) | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5357639B2 (ja) * | 2009-06-24 | 2013-12-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| KR101559913B1 (ko) * | 2009-06-25 | 2015-10-27 | 삼성전자주식회사 | 플라즈마 건식 식각 장치 |
| US8529729B2 (en) * | 2010-06-07 | 2013-09-10 | Lam Research Corporation | Plasma processing chamber component having adaptive thermal conductor |
| US9947559B2 (en) | 2011-10-28 | 2018-04-17 | Applied Materials, Inc. | Thermal management of edge ring in semiconductor processing |
| US10825708B2 (en) | 2011-12-15 | 2020-11-03 | Applied Materials, Inc. | Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability |
-
2012
- 2012-10-05 US US13/646,069 patent/US9947559B2/en active Active
- 2012-10-15 JP JP2014538831A patent/JP6268095B2/ja active Active
- 2012-10-15 WO PCT/US2012/060313 patent/WO2013062804A1/en not_active Ceased
- 2012-10-15 CN CN201280052545.6A patent/CN103890917B/zh active Active
- 2012-10-15 KR KR1020147014248A patent/KR102042612B1/ko active Active
- 2012-10-16 TW TW101138100A patent/TWI618138B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2014532987A5 (enExample) | ||
| KR102423749B1 (ko) | 대칭적인 플라즈마 프로세스 챔버 | |
| US8900402B2 (en) | Semiconductor processing system having multiple decoupled plasma sources | |
| US8900403B2 (en) | Semiconductor processing system having multiple decoupled plasma sources | |
| JP2015501546A5 (enExample) | ||
| US9536710B2 (en) | Tunable gas delivery assembly with internal diffuser and angular injection | |
| US9488315B2 (en) | Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber | |
| JP6268095B2 (ja) | 半導体処理におけるエッジリングの熱管理 | |
| TW201511077A (zh) | 電漿處理裝置及電漿處理方法 | |
| JP6581602B2 (ja) | 改善されたフローコンダクタンス及び均一性のため軸対称性を可能にするインラインｄｐｓチャンバハードウェア設計 | |
| KR20160073305A (ko) | 플라즈마 처리 장치 | |
| CN109075024A (zh) | 微体积沉积腔室 | |
| KR101947844B1 (ko) | 다수의 디커플링된 플라즈마 소스들을 갖는 반도체 프로세싱 시스템 | |
| JP2011511438A (ja) | プロセスチャンバ内での流れ均一性を向上させる方法及び装置 | |
| US20210032753A1 (en) | Methods and apparatus for dual channel showerheads | |
| WO2018214332A1 (zh) | 工艺腔室及半导体处理设备 | |
| CN102573263A (zh) | 等离子体处理装置及其处理气体供给结构 | |
| JPWO2017149738A1 (ja) | プラズマ処理装置及びプラズマ処理用反応容器の構造 |