TWI618138B - 半導體處理中的邊緣環之熱管理 - Google Patents

半導體處理中的邊緣環之熱管理 Download PDF

Info

Publication number
TWI618138B
TWI618138B TW101138100A TW101138100A TWI618138B TW I618138 B TWI618138 B TW I618138B TW 101138100 A TW101138100 A TW 101138100A TW 101138100 A TW101138100 A TW 101138100A TW I618138 B TWI618138 B TW I618138B
Authority
TW
Taiwan
Prior art keywords
ring
substrate support
disposed
substrate
heat transfer
Prior art date
Application number
TW101138100A
Other languages
English (en)
Chinese (zh)
Other versions
TW201322333A (zh
Inventor
包爾阿尼魯德哈
薩理納斯馬丁傑佛瑞
路柏曼斯基迪米奇
尤瑟夫以馬德
蓋葉安德魯恩
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201322333A publication Critical patent/TW201322333A/zh
Application granted granted Critical
Publication of TWI618138B publication Critical patent/TWI618138B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
TW101138100A 2011-10-28 2012-10-16 半導體處理中的邊緣環之熱管理 TWI618138B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161552749P 2011-10-28 2011-10-28
US61/552,749 2011-10-28
US13/646,069 2012-10-05
US13/646,069 US9947559B2 (en) 2011-10-28 2012-10-05 Thermal management of edge ring in semiconductor processing

Publications (2)

Publication Number Publication Date
TW201322333A TW201322333A (zh) 2013-06-01
TWI618138B true TWI618138B (zh) 2018-03-11

Family

ID=48168334

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101138100A TWI618138B (zh) 2011-10-28 2012-10-16 半導體處理中的邊緣環之熱管理

Country Status (6)

Country Link
US (1) US9947559B2 (enExample)
JP (1) JP6268095B2 (enExample)
KR (1) KR102042612B1 (enExample)
CN (1) CN103890917B (enExample)
TW (1) TWI618138B (enExample)
WO (1) WO2013062804A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9947559B2 (en) 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
ES2931905T3 (es) 2015-03-31 2023-01-04 Koki Holdings Co Ltd Herramienta eléctrica
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
CN110468377B (zh) * 2018-05-11 2022-04-22 北京北方华创微电子装备有限公司 腔室及半导体加工设备
JP2021027152A (ja) * 2019-08-05 2021-02-22 キオクシア株式会社 プラズマ処理装置およびプラズマ処理方法
CN115440558A (zh) 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
KR20230122477A (ko) * 2022-02-14 2023-08-22 주성엔지니어링(주) 기판 처리 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
US20050274321A1 (en) * 2004-06-10 2005-12-15 Tokyo Electron Limited Plasma processing apparatus and method
US20100040768A1 (en) * 2008-08-15 2010-02-18 Lam Research Corporation Temperature controlled hot edge ring assembly
US20100243606A1 (en) * 2009-03-27 2010-09-30 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US20100326957A1 (en) * 2009-06-24 2010-12-30 Kenji Maeda Plasma processing apparatus and plasma processing method
US20100326600A1 (en) * 2009-06-25 2010-12-30 Min-Joon Park Plasma dry etching apparatus having coupling ring with cooling and heating units

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
JP3908678B2 (ja) 2003-02-28 2007-04-25 株式会社日立ハイテクノロジーズ ウエハ処理方法
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US20050133165A1 (en) * 2003-12-23 2005-06-23 Taiwan Semiconductor Manufacturing Co. Apparatus for the prevention of arcing in a CVD-TiN chamber
KR20070018404A (ko) 2005-08-10 2007-02-14 삼성전자주식회사 플라즈마 식각 장치
JP2007258500A (ja) 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
US8941037B2 (en) * 2006-12-25 2015-01-27 Tokyo Electron Limited Substrate processing apparatus, focus ring heating method, and substrate processing method
WO2009107718A1 (ja) * 2008-02-27 2009-09-03 東京エレクトロン株式会社 プラズマエッチング処理装置およびプラズマエッチング処理方法
JP5325457B2 (ja) 2008-05-22 2013-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20110240598A1 (en) 2008-11-18 2011-10-06 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8529729B2 (en) * 2010-06-07 2013-09-10 Lam Research Corporation Plasma processing chamber component having adaptive thermal conductor
US9947559B2 (en) 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
US10825708B2 (en) 2011-12-15 2020-11-03 Applied Materials, Inc. Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
US20050274321A1 (en) * 2004-06-10 2005-12-15 Tokyo Electron Limited Plasma processing apparatus and method
US20100040768A1 (en) * 2008-08-15 2010-02-18 Lam Research Corporation Temperature controlled hot edge ring assembly
US20100243606A1 (en) * 2009-03-27 2010-09-30 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US20100326957A1 (en) * 2009-06-24 2010-12-30 Kenji Maeda Plasma processing apparatus and plasma processing method
US20100326600A1 (en) * 2009-06-25 2010-12-30 Min-Joon Park Plasma dry etching apparatus having coupling ring with cooling and heating units

Also Published As

Publication number Publication date
US20130105088A1 (en) 2013-05-02
KR102042612B1 (ko) 2019-11-08
US9947559B2 (en) 2018-04-17
WO2013062804A1 (en) 2013-05-02
TW201322333A (zh) 2013-06-01
CN103890917B (zh) 2017-05-17
CN103890917A (zh) 2014-06-25
JP6268095B2 (ja) 2018-01-24
JP2014532987A (ja) 2014-12-08
KR20140085568A (ko) 2014-07-07

Similar Documents

Publication Publication Date Title
TWI618138B (zh) 半導體處理中的邊緣環之熱管理
TWI574345B (zh) 靜電夾盤
US10544508B2 (en) Controlling temperature in substrate processing systems
KR101495288B1 (ko) 기판 처리 장치 및 방법
TWI489546B (zh) 將氣體徑向傳送至腔室之裝置
US8633423B2 (en) Methods and apparatus for controlling substrate temperature in a process chamber
CN105870039B (zh) 用于等离子体处理的双区式加热器
US20100326600A1 (en) Plasma dry etching apparatus having coupling ring with cooling and heating units
US10386126B2 (en) Apparatus for controlling temperature uniformity of a substrate
KR20130093102A (ko) 프로세스 챔버에서 가스의 유동을 제어하기 위한 장치
TW200921783A (en) Substrate processing equipment, and showerhead
US10487401B2 (en) Diffuser temperature control
TW201814823A (zh) 用於寬範圍溫度控制的加熱器基座組件
CN110867363A (zh) 等离子体处理装置
US20090194237A1 (en) Plasma processing system
KR20150036100A (ko) 상부 전극, 및 플라즈마 처리 장치
US20120160833A1 (en) Heat treatment apparatus
KR20220024045A (ko) 기판 후면 손상을 최소화하기 위한 방법들 및 장치
US20170211185A1 (en) Ceramic showerhead with embedded conductive layers
KR20080061811A (ko) 기판 표면처리장치
KR20080030713A (ko) 기판 가공 장치