KR102042612B1 - 반도체 프로세싱에서 엣지 링의 열 관리 - Google Patents

반도체 프로세싱에서 엣지 링의 열 관리 Download PDF

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KR102042612B1
KR102042612B1 KR1020147014248A KR20147014248A KR102042612B1 KR 102042612 B1 KR102042612 B1 KR 102042612B1 KR 1020147014248 A KR1020147014248 A KR 1020147014248A KR 20147014248 A KR20147014248 A KR 20147014248A KR 102042612 B1 KR102042612 B1 KR 102042612B1
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South Korea
Prior art keywords
ring
substrate support
substrate
disposed
processing
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Korean (ko)
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KR20140085568A (ko
Inventor
아니룻다 팔
마틴 제프리 샐리나스
드미트리 루보미어스키
이마드 유시프
앤드류 엔구옌
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020147014248A 2011-10-28 2012-10-15 반도체 프로세싱에서 엣지 링의 열 관리 Active KR102042612B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161552749P 2011-10-28 2011-10-28
US61/552,749 2011-10-28
US13/646,069 US9947559B2 (en) 2011-10-28 2012-10-05 Thermal management of edge ring in semiconductor processing
US13/646,069 2012-10-05
PCT/US2012/060313 WO2013062804A1 (en) 2011-10-28 2012-10-15 Thermal management of edge ring in semiconductor processing

Publications (2)

Publication Number Publication Date
KR20140085568A KR20140085568A (ko) 2014-07-07
KR102042612B1 true KR102042612B1 (ko) 2019-11-08

Family

ID=48168334

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147014248A Active KR102042612B1 (ko) 2011-10-28 2012-10-15 반도체 프로세싱에서 엣지 링의 열 관리

Country Status (6)

Country Link
US (1) US9947559B2 (enExample)
JP (1) JP6268095B2 (enExample)
KR (1) KR102042612B1 (enExample)
CN (1) CN103890917B (enExample)
TW (1) TWI618138B (enExample)
WO (1) WO2013062804A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9947559B2 (en) 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
JP6241694B2 (ja) 2015-03-31 2017-12-06 日立工機株式会社 電動工具
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
CN110468377B (zh) * 2018-05-11 2022-04-22 北京北方华创微电子装备有限公司 腔室及半导体加工设备
JP2021027152A (ja) * 2019-08-05 2021-02-22 キオクシア株式会社 プラズマ処理装置およびプラズマ処理方法
CN115440558A (zh) * 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
KR20230122477A (ko) * 2022-02-14 2023-08-22 주성엔지니어링(주) 기판 처리 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004088063A (ja) * 2003-02-28 2004-03-18 Hitachi High-Technologies Corp ウエハ処理装置、ウエハステージおよびウエハ処理方法
JP2007258500A (ja) * 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
JP2009283700A (ja) * 2008-05-22 2009-12-03 Hitachi High-Technologies Corp プラズマ処理装置
KR101066974B1 (ko) * 2009-06-24 2011-09-22 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법

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US6887340B2 (en) 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US20050133165A1 (en) * 2003-12-23 2005-06-23 Taiwan Semiconductor Manufacturing Co. Apparatus for the prevention of arcing in a CVD-TiN chamber
US7713431B2 (en) * 2004-06-10 2010-05-11 Tokyo Electron Limited Plasma processing method
KR20070018404A (ko) 2005-08-10 2007-02-14 삼성전자주식회사 플라즈마 식각 장치
US8941037B2 (en) * 2006-12-25 2015-01-27 Tokyo Electron Limited Substrate processing apparatus, focus ring heating method, and substrate processing method
JP5454467B2 (ja) * 2008-02-27 2014-03-26 東京エレクトロン株式会社 プラズマエッチング処理装置およびプラズマエッチング処理方法
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
WO2010058642A1 (ja) 2008-11-18 2010-05-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5657262B2 (ja) 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
KR101559913B1 (ko) * 2009-06-25 2015-10-27 삼성전자주식회사 플라즈마 건식 식각 장치
US8529729B2 (en) * 2010-06-07 2013-09-10 Lam Research Corporation Plasma processing chamber component having adaptive thermal conductor
US9947559B2 (en) 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004088063A (ja) * 2003-02-28 2004-03-18 Hitachi High-Technologies Corp ウエハ処理装置、ウエハステージおよびウエハ処理方法
JP2007258500A (ja) * 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
JP2009283700A (ja) * 2008-05-22 2009-12-03 Hitachi High-Technologies Corp プラズマ処理装置
KR101066974B1 (ko) * 2009-06-24 2011-09-22 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법

Also Published As

Publication number Publication date
US9947559B2 (en) 2018-04-17
TWI618138B (zh) 2018-03-11
WO2013062804A1 (en) 2013-05-02
CN103890917B (zh) 2017-05-17
JP2014532987A (ja) 2014-12-08
US20130105088A1 (en) 2013-05-02
KR20140085568A (ko) 2014-07-07
CN103890917A (zh) 2014-06-25
JP6268095B2 (ja) 2018-01-24
TW201322333A (zh) 2013-06-01

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