CN103890917B - 半导体处理中的边缘环的热管理 - Google Patents

半导体处理中的边缘环的热管理 Download PDF

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Publication number
CN103890917B
CN103890917B CN201280052545.6A CN201280052545A CN103890917B CN 103890917 B CN103890917 B CN 103890917B CN 201280052545 A CN201280052545 A CN 201280052545A CN 103890917 B CN103890917 B CN 103890917B
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China
Prior art keywords
ring
substrate support
heat
equipment
processing
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English (en)
Chinese (zh)
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CN103890917A (zh
Inventor
A·帕尔
M·J·萨里纳斯
D·卢博米尔斯基
I·优素福
A·恩盖耶
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
CN201280052545.6A 2011-10-28 2012-10-15 半导体处理中的边缘环的热管理 Active CN103890917B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161552749P 2011-10-28 2011-10-28
US61/552,749 2011-10-28
US13/646,069 2012-10-05
US13/646,069 US9947559B2 (en) 2011-10-28 2012-10-05 Thermal management of edge ring in semiconductor processing
PCT/US2012/060313 WO2013062804A1 (en) 2011-10-28 2012-10-15 Thermal management of edge ring in semiconductor processing

Publications (2)

Publication Number Publication Date
CN103890917A CN103890917A (zh) 2014-06-25
CN103890917B true CN103890917B (zh) 2017-05-17

Family

ID=48168334

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280052545.6A Active CN103890917B (zh) 2011-10-28 2012-10-15 半导体处理中的边缘环的热管理

Country Status (6)

Country Link
US (1) US9947559B2 (enExample)
JP (1) JP6268095B2 (enExample)
KR (1) KR102042612B1 (enExample)
CN (1) CN103890917B (enExample)
TW (1) TWI618138B (enExample)
WO (1) WO2013062804A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9947559B2 (en) 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
ES2931905T3 (es) 2015-03-31 2023-01-04 Koki Holdings Co Ltd Herramienta eléctrica
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
CN110468377B (zh) * 2018-05-11 2022-04-22 北京北方华创微电子装备有限公司 腔室及半导体加工设备
JP2021027152A (ja) * 2019-08-05 2021-02-22 キオクシア株式会社 プラズマ処理装置およびプラズマ処理方法
CN115440558A (zh) 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
KR20230122477A (ko) * 2022-02-14 2023-08-22 주성엔지니어링(주) 기판 처리 장치

Citations (3)

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CN1540738A (zh) * 2003-04-24 2004-10-27 ���������ƴ���ʽ���� 等离子体处理装置、聚焦环和基座
CN102150243A (zh) * 2008-08-15 2011-08-10 朗姆研究公司 温控热边缘环组合件
CN102270561A (zh) * 2010-06-07 2011-12-07 朗姆研究公司 具有适配热导体的等离子体处理室部件

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US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
JP3908678B2 (ja) 2003-02-28 2007-04-25 株式会社日立ハイテクノロジーズ ウエハ処理方法
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US20050133165A1 (en) * 2003-12-23 2005-06-23 Taiwan Semiconductor Manufacturing Co. Apparatus for the prevention of arcing in a CVD-TiN chamber
US7713431B2 (en) * 2004-06-10 2010-05-11 Tokyo Electron Limited Plasma processing method
KR20070018404A (ko) 2005-08-10 2007-02-14 삼성전자주식회사 플라즈마 식각 장치
JP2007258500A (ja) 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
US8941037B2 (en) * 2006-12-25 2015-01-27 Tokyo Electron Limited Substrate processing apparatus, focus ring heating method, and substrate processing method
WO2009107718A1 (ja) * 2008-02-27 2009-09-03 東京エレクトロン株式会社 プラズマエッチング処理装置およびプラズマエッチング処理方法
JP5325457B2 (ja) 2008-05-22 2013-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20110240598A1 (en) 2008-11-18 2011-10-06 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5657262B2 (ja) 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5357639B2 (ja) * 2009-06-24 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
KR101559913B1 (ko) * 2009-06-25 2015-10-27 삼성전자주식회사 플라즈마 건식 식각 장치
US9947559B2 (en) 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
US10825708B2 (en) 2011-12-15 2020-11-03 Applied Materials, Inc. Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1540738A (zh) * 2003-04-24 2004-10-27 ���������ƴ���ʽ���� 等离子体处理装置、聚焦环和基座
CN102150243A (zh) * 2008-08-15 2011-08-10 朗姆研究公司 温控热边缘环组合件
CN102270561A (zh) * 2010-06-07 2011-12-07 朗姆研究公司 具有适配热导体的等离子体处理室部件

Also Published As

Publication number Publication date
US20130105088A1 (en) 2013-05-02
KR102042612B1 (ko) 2019-11-08
US9947559B2 (en) 2018-04-17
WO2013062804A1 (en) 2013-05-02
TW201322333A (zh) 2013-06-01
CN103890917A (zh) 2014-06-25
JP6268095B2 (ja) 2018-01-24
JP2014532987A (ja) 2014-12-08
TWI618138B (zh) 2018-03-11
KR20140085568A (ko) 2014-07-07

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