JP6268095B2 - 半導体処理におけるエッジリングの熱管理 - Google Patents

半導体処理におけるエッジリングの熱管理 Download PDF

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Publication number
JP6268095B2
JP6268095B2 JP2014538831A JP2014538831A JP6268095B2 JP 6268095 B2 JP6268095 B2 JP 6268095B2 JP 2014538831 A JP2014538831 A JP 2014538831A JP 2014538831 A JP2014538831 A JP 2014538831A JP 6268095 B2 JP6268095 B2 JP 6268095B2
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Japan
Prior art keywords
ring
heat transfer
substrate support
substrate
disposed
Prior art date
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JP2014538831A
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English (en)
Japanese (ja)
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JP2014532987A5 (enExample
JP2014532987A (ja
Inventor
アニルダハ パル
アニルダハ パル
マーティン ジェフリー サリナス
マーティン ジェフリー サリナス
ディミトリー ルボミルスキー
ディミトリー ルボミルスキー
イマド ユシフ
イマド ユシフ
アンドリュー ヌグエン
アンドリュー ヌグエン
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2014532987A5 publication Critical patent/JP2014532987A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014538831A 2011-10-28 2012-10-15 半導体処理におけるエッジリングの熱管理 Active JP6268095B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161552749P 2011-10-28 2011-10-28
US61/552,749 2011-10-28
US13/646,069 2012-10-05
US13/646,069 US9947559B2 (en) 2011-10-28 2012-10-05 Thermal management of edge ring in semiconductor processing
PCT/US2012/060313 WO2013062804A1 (en) 2011-10-28 2012-10-15 Thermal management of edge ring in semiconductor processing

Publications (3)

Publication Number Publication Date
JP2014532987A JP2014532987A (ja) 2014-12-08
JP2014532987A5 JP2014532987A5 (enExample) 2015-11-19
JP6268095B2 true JP6268095B2 (ja) 2018-01-24

Family

ID=48168334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014538831A Active JP6268095B2 (ja) 2011-10-28 2012-10-15 半導体処理におけるエッジリングの熱管理

Country Status (6)

Country Link
US (1) US9947559B2 (enExample)
JP (1) JP6268095B2 (enExample)
KR (1) KR102042612B1 (enExample)
CN (1) CN103890917B (enExample)
TW (1) TWI618138B (enExample)
WO (1) WO2013062804A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10717138B2 (en) 2015-03-31 2020-07-21 Koki Holdings Co., Ltd. Power tool

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9947559B2 (en) 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
CN110468377B (zh) * 2018-05-11 2022-04-22 北京北方华创微电子装备有限公司 腔室及半导体加工设备
JP2021027152A (ja) * 2019-08-05 2021-02-22 キオクシア株式会社 プラズマ処理装置およびプラズマ処理方法
CN115440558A (zh) 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
KR20230122477A (ko) * 2022-02-14 2023-08-22 주성엔지니어링(주) 기판 처리 장치

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US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
JP3908678B2 (ja) 2003-02-28 2007-04-25 株式会社日立ハイテクノロジーズ ウエハ処理方法
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US20050133165A1 (en) * 2003-12-23 2005-06-23 Taiwan Semiconductor Manufacturing Co. Apparatus for the prevention of arcing in a CVD-TiN chamber
US7713431B2 (en) * 2004-06-10 2010-05-11 Tokyo Electron Limited Plasma processing method
KR20070018404A (ko) 2005-08-10 2007-02-14 삼성전자주식회사 플라즈마 식각 장치
JP2007258500A (ja) 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
US8941037B2 (en) * 2006-12-25 2015-01-27 Tokyo Electron Limited Substrate processing apparatus, focus ring heating method, and substrate processing method
WO2009107718A1 (ja) * 2008-02-27 2009-09-03 東京エレクトロン株式会社 プラズマエッチング処理装置およびプラズマエッチング処理方法
JP5325457B2 (ja) 2008-05-22 2013-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US20110240598A1 (en) 2008-11-18 2011-10-06 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5657262B2 (ja) 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5357639B2 (ja) * 2009-06-24 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
KR101559913B1 (ko) * 2009-06-25 2015-10-27 삼성전자주식회사 플라즈마 건식 식각 장치
US8529729B2 (en) * 2010-06-07 2013-09-10 Lam Research Corporation Plasma processing chamber component having adaptive thermal conductor
US9947559B2 (en) 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
US10825708B2 (en) 2011-12-15 2020-11-03 Applied Materials, Inc. Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10717138B2 (en) 2015-03-31 2020-07-21 Koki Holdings Co., Ltd. Power tool

Also Published As

Publication number Publication date
US20130105088A1 (en) 2013-05-02
KR102042612B1 (ko) 2019-11-08
US9947559B2 (en) 2018-04-17
WO2013062804A1 (en) 2013-05-02
TW201322333A (zh) 2013-06-01
CN103890917B (zh) 2017-05-17
CN103890917A (zh) 2014-06-25
JP2014532987A (ja) 2014-12-08
TWI618138B (zh) 2018-03-11
KR20140085568A (ko) 2014-07-07

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