JP2014528895A - シリコン層を含む基板表面にグラフェン層を形成する方法 - Google Patents
シリコン層を含む基板表面にグラフェン層を形成する方法 Download PDFInfo
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- JP2014528895A JP2014528895A JP2014532411A JP2014532411A JP2014528895A JP 2014528895 A JP2014528895 A JP 2014528895A JP 2014532411 A JP2014532411 A JP 2014532411A JP 2014532411 A JP2014532411 A JP 2014532411A JP 2014528895 A JP2014528895 A JP 2014528895A
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- 239000000758 substrate Substances 0.000 title claims abstract description 60
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 52
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 51
- 239000010703 silicon Substances 0.000 title claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 50
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 69
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000000859 sublimation Methods 0.000 claims description 11
- 230000008022 sublimation Effects 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 60
- 239000013078 crystal Substances 0.000 description 21
- 230000001105 regulatory effect Effects 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/188—Preparation by epitaxial growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
−シリコン層の自由表面に炭化ケイ素基膜を形成すること;および
−炭化ケイ素膜の原子の少なくとも第1の格子配列におけるケイ素の昇華まで基板を徐々に加熱し、炭化ケイ素膜上にグラフェン層を形成させること、
を含む。
−シリコン層の自由表面に炭化ケイ素基膜を形成すること;および
−炭化ケイ素膜の原子の少なくとも第1の格子配列におけるケイ素の昇華まで基板を徐々に加熱し、炭化ケイ素膜上にグラフェン層を形成させること、
を含む。
Claims (8)
- シリコン層(101)を含む基板(100)の表面にグラフェン層(105)を形成する方法であり、その方法は、連続して、次の段階:
−シリコン層の自由表面に炭化ケイ素膜(103)を形成すること;および
−炭化ケイ素膜の原子の少なくとも第1の格子配列におけるケイ素の昇華まで基板を徐々に加熱し、炭化ケイ素膜上にグラフェン層を形成させること、
を含み、
その方法は、段差のある自由表面を有するシリコン層が使用されることを特徴とする。 - 段差のある表面は、実質的に同一の立ち上がり(rises)hを有するライザー(104)により分離される段(102)を含み、一方、その段は実質的に同一の長さgを有する請求項1に記載の方法。
- 段差のある自由表面は、2つの隣り合う段(102)に実質的に垂直に延びるライザー(104)により分離される段(102)を含む請求項1に記載の方法。
- 段差のある自由表面は、ライザー(104)により分離される段(102)を含み、各段は基板がその上に置かれるホルダー(S)に実質的に平行に延びている請求項1に記載の方法。
- 段差のある自由表面は、2〜3Åの立ち上がり(h)を有するライザー(104)により分離される段(102)を含み、段(102)は35〜40Åの長さを有する請求項1に記載の方法。
- 基板(100)は、調節された不活性ガス流下に加熱される請求項1に記載の方法。
- 不活性ガスが窒素である請求項1に記載の方法。
- 基板(100)が炭化ケイ素膜(103)の少なくとも第1の格子配列の原子の昇華まで加熱される前に、調節されたガス状ケイ素流下に基板(100)を予熱する先行段階を含む、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1158818 | 2011-09-30 | ||
FR1158818A FR2980786B1 (fr) | 2011-09-30 | 2011-09-30 | Procede de formation d'une couche de graphene a la surface d'un substrat comprenant une couche de silicium |
PCT/EP2012/069232 WO2013045641A1 (fr) | 2011-09-30 | 2012-09-28 | Procédé de formation d'une couche de graphène à la surface d'un substrat comprenant une couche de silicium |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014528895A true JP2014528895A (ja) | 2014-10-30 |
JP5844909B2 JP5844909B2 (ja) | 2016-01-20 |
Family
ID=46924485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014532411A Expired - Fee Related JP5844909B2 (ja) | 2011-09-30 | 2012-09-28 | シリコン層を含む基板表面にグラフェン層を形成する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9053933B2 (ja) |
EP (1) | EP2760786B1 (ja) |
JP (1) | JP5844909B2 (ja) |
KR (1) | KR101585194B1 (ja) |
CN (1) | CN103842291B (ja) |
FR (1) | FR2980786B1 (ja) |
WO (1) | WO2013045641A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101967790B1 (ko) * | 2017-09-21 | 2019-04-10 | 코리아바큠테크(주) | 박막 형성 장치 |
FR3116151A1 (fr) * | 2020-11-10 | 2022-05-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation d’une structure de piegeage d’un substrat utile |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0982643A (ja) * | 1995-09-14 | 1997-03-28 | Matsushita Electric Ind Co Ltd | 炭化珪素薄膜の製造方法 |
JPH1081599A (ja) * | 1996-09-04 | 1998-03-31 | Matsushita Electric Ind Co Ltd | 炭化珪素の成長法 |
JP2005223215A (ja) * | 2004-02-06 | 2005-08-18 | Japan Science & Technology Agency | Si基板上への炭化珪素単結晶膜の製造方法及びそれを用いて製造される炭化珪素半導体装置 |
JP2007284311A (ja) * | 2006-04-19 | 2007-11-01 | Matsushita Electric Ind Co Ltd | カーボンナノ材料の製造方法 |
JP2009062247A (ja) * | 2007-09-10 | 2009-03-26 | Univ Of Fukui | グラフェンシートの製造方法 |
US20110042687A1 (en) * | 2009-08-24 | 2011-02-24 | International Business Machines Corporation | Graphene growth on a carbon-containing semiconductor layer |
JP2011178630A (ja) * | 2010-03-02 | 2011-09-15 | Japan Atomic Energy Agency | グラフェンの形成方法及びグラフェンの形成装置 |
JP2012121751A (ja) * | 2010-12-07 | 2012-06-28 | Kanazawa Univ | グラフェン・ダイヤモンド積層体 |
JP2013510071A (ja) * | 2009-11-09 | 2013-03-21 | コミサリア ア レネルジィ アトミーク エ オ ゼネ ルジイ アルテアナティーフ | 開いたバンドギャップと、ゼロバンドギャップを有する標準的なグラフェンに匹敵する移動度とを有するSiC上にエピタキシャル成長したグラフェン |
JP2013537164A (ja) * | 2010-09-16 | 2013-09-30 | グラフェンシック・エービー | グラフェンの成長のための方法 |
Family Cites Families (5)
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US7732859B2 (en) * | 2007-07-16 | 2010-06-08 | International Business Machines Corporation | Graphene-based transistor |
US8465799B2 (en) * | 2008-09-18 | 2013-06-18 | International Business Machines Corporation | Method for preparation of flat step-free silicon carbide surfaces |
CN101602503B (zh) * | 2009-07-20 | 2011-04-27 | 西安电子科技大学 | 4H-SiC硅面外延生长石墨烯的方法 |
US7947581B2 (en) * | 2009-08-10 | 2011-05-24 | Linde Aktiengesellschaft | Formation of graphene wafers on silicon substrates |
US8242030B2 (en) * | 2009-09-25 | 2012-08-14 | International Business Machines Corporation | Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation |
-
2011
- 2011-09-30 FR FR1158818A patent/FR2980786B1/fr not_active Expired - Fee Related
-
2012
- 2012-09-28 JP JP2014532411A patent/JP5844909B2/ja not_active Expired - Fee Related
- 2012-09-28 WO PCT/EP2012/069232 patent/WO2013045641A1/fr active Application Filing
- 2012-09-28 KR KR1020147009903A patent/KR101585194B1/ko active IP Right Grant
- 2012-09-28 EP EP12762648.9A patent/EP2760786B1/fr not_active Not-in-force
- 2012-09-28 CN CN201280047617.8A patent/CN103842291B/zh not_active Expired - Fee Related
- 2012-09-28 US US14/348,653 patent/US9053933B2/en not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0982643A (ja) * | 1995-09-14 | 1997-03-28 | Matsushita Electric Ind Co Ltd | 炭化珪素薄膜の製造方法 |
JPH1081599A (ja) * | 1996-09-04 | 1998-03-31 | Matsushita Electric Ind Co Ltd | 炭化珪素の成長法 |
JP2005223215A (ja) * | 2004-02-06 | 2005-08-18 | Japan Science & Technology Agency | Si基板上への炭化珪素単結晶膜の製造方法及びそれを用いて製造される炭化珪素半導体装置 |
JP2007284311A (ja) * | 2006-04-19 | 2007-11-01 | Matsushita Electric Ind Co Ltd | カーボンナノ材料の製造方法 |
JP2009062247A (ja) * | 2007-09-10 | 2009-03-26 | Univ Of Fukui | グラフェンシートの製造方法 |
US20110042687A1 (en) * | 2009-08-24 | 2011-02-24 | International Business Machines Corporation | Graphene growth on a carbon-containing semiconductor layer |
JP2013510071A (ja) * | 2009-11-09 | 2013-03-21 | コミサリア ア レネルジィ アトミーク エ オ ゼネ ルジイ アルテアナティーフ | 開いたバンドギャップと、ゼロバンドギャップを有する標準的なグラフェンに匹敵する移動度とを有するSiC上にエピタキシャル成長したグラフェン |
JP2011178630A (ja) * | 2010-03-02 | 2011-09-15 | Japan Atomic Energy Agency | グラフェンの形成方法及びグラフェンの形成装置 |
JP2013537164A (ja) * | 2010-09-16 | 2013-09-30 | グラフェンシック・エービー | グラフェンの成長のための方法 |
JP2012121751A (ja) * | 2010-12-07 | 2012-06-28 | Kanazawa Univ | グラフェン・ダイヤモンド積層体 |
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Title |
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JPN6014002739; 服部梓他: '300nm以上のドメインサイズをもつ4H-SiC(0001)上の高品質モノグラフェン' 応用物理学関係連合講演会講演予稿集 Vol.57th, 20100303, P.17-023 * |
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Also Published As
Publication number | Publication date |
---|---|
KR101585194B1 (ko) | 2016-01-13 |
JP5844909B2 (ja) | 2016-01-20 |
CN103842291B (zh) | 2015-12-09 |
KR20140069156A (ko) | 2014-06-09 |
EP2760786A1 (fr) | 2014-08-06 |
US9053933B2 (en) | 2015-06-09 |
CN103842291A (zh) | 2014-06-04 |
WO2013045641A1 (fr) | 2013-04-04 |
FR2980786B1 (fr) | 2013-10-25 |
FR2980786A1 (fr) | 2013-04-05 |
EP2760786B1 (fr) | 2018-05-02 |
US20140242784A1 (en) | 2014-08-28 |
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