JP2014513312A5 - - Google Patents
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- Publication number
- JP2014513312A5 JP2014513312A5 JP2013553041A JP2013553041A JP2014513312A5 JP 2014513312 A5 JP2014513312 A5 JP 2014513312A5 JP 2013553041 A JP2013553041 A JP 2013553041A JP 2013553041 A JP2013553041 A JP 2013553041A JP 2014513312 A5 JP2014513312 A5 JP 2014513312A5
- Authority
- JP
- Japan
- Prior art keywords
- alkyl
- moiety
- iodo
- fluoro
- fluoroalkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000002346 iodo group Chemical group I* 0.000 claims description 10
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 9
- 125000001153 fluoro group Chemical group F* 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 229910052740 iodine Inorganic materials 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 125000003709 fluoroalkyl group Chemical group 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- MUVQKFGNPGZBII-UHFFFAOYSA-N 1-anthrol Chemical group C1=CC=C2C=C3C(O)=CC=CC3=CC2=C1 MUVQKFGNPGZBII-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical group C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- HFHFGHLXUCOHLN-UHFFFAOYSA-N 2-fluorophenol Chemical compound OC1=CC=CC=C1F HFHFGHLXUCOHLN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/023,291 | 2011-02-08 | ||
| US13/023,291 US8465902B2 (en) | 2011-02-08 | 2011-02-08 | Underlayer coating composition and processes thereof |
| PCT/IB2012/000213 WO2012107823A1 (en) | 2011-02-08 | 2012-02-07 | Underlayer coating composition and process for manufacturing a microelectronic device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014513312A JP2014513312A (ja) | 2014-05-29 |
| JP2014513312A5 true JP2014513312A5 (enExample) | 2016-11-04 |
| JP6109750B2 JP6109750B2 (ja) | 2017-04-05 |
Family
ID=45815912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013553041A Active JP6109750B2 (ja) | 2011-02-08 | 2012-02-07 | 下層コーティング組成物および微細電子デバイスを製造するための方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8465902B2 (enExample) |
| EP (1) | EP2673675B1 (enExample) |
| JP (1) | JP6109750B2 (enExample) |
| KR (1) | KR101824759B1 (enExample) |
| CN (1) | CN103370653B (enExample) |
| SG (1) | SG190992A1 (enExample) |
| TW (1) | TWI545161B (enExample) |
| WO (1) | WO2012107823A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8906590B2 (en) * | 2011-03-30 | 2014-12-09 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
| US8906592B2 (en) | 2012-08-01 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
| US9152051B2 (en) | 2013-06-13 | 2015-10-06 | Az Electronics Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
| KR102364126B1 (ko) * | 2014-03-24 | 2022-02-18 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법, 수지 및 레지스트 하층막 형성 조성물 |
| TWI659991B (zh) * | 2015-08-31 | 2019-05-21 | Rohm And Haas Electronic Materials Llc | 與外塗佈光致抗蝕劑一起使用的塗料組合物 |
| TWI646397B (zh) * | 2015-10-31 | 2019-01-01 | 南韓商羅門哈斯電子材料韓國公司 | 與外塗佈光致抗蝕劑一起使用的塗料組合物 |
| US10684546B2 (en) * | 2016-04-28 | 2020-06-16 | Nissan Chemical Corporation | Composition for forming resist underlayer film |
| JP6531723B2 (ja) * | 2016-06-29 | 2019-06-19 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| US10203602B2 (en) * | 2016-09-30 | 2019-02-12 | Rohm And Haas Electronic Materials Korea Ltd. | Coating compositions for use with an overcoated photoresist |
| EP3605228B1 (en) * | 2017-03-30 | 2022-02-09 | JSR Corporation | Radiation sensitive composition and resist pattern forming method |
| CN112166379B (zh) * | 2018-05-25 | 2025-04-01 | 日产化学株式会社 | 使用了环式羰基化合物的抗蚀剂下层膜形成用组合物 |
| KR102288386B1 (ko) | 2018-09-06 | 2021-08-10 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법 |
| CN109638156B (zh) * | 2018-12-10 | 2020-09-01 | 武汉华星光电半导体显示技术有限公司 | 柔性显示面板及其制作方法 |
| KR102260811B1 (ko) | 2018-12-26 | 2021-06-03 | 삼성에스디아이 주식회사 | 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법 |
| WO2020255984A1 (ja) * | 2019-06-17 | 2020-12-24 | 日産化学株式会社 | ジシアノスチリル基を有する複素環化合物を含むウェットエッチング可能なレジスト下層膜形成組成物 |
| TWI837443B (zh) * | 2019-12-31 | 2024-04-01 | 南韓商羅門哈斯電子材料韓國公司 | 塗料組成物、經塗覆的基底及形成電子裝置的方法 |
| WO2024070786A1 (ja) * | 2022-09-30 | 2024-04-04 | Jsr株式会社 | レジスト下層膜形成用組成物及び半導体基板の製造方法 |
| EP4657158A1 (en) * | 2023-02-27 | 2025-12-03 | Nissan Chemical Corporation | Resist underlayer film formation composition |
| WO2024204232A1 (ja) * | 2023-03-27 | 2024-10-03 | 日産化学株式会社 | レジスト下層膜形成組成物 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3474054A (en) | 1966-09-13 | 1969-10-21 | Permalac Corp The | Surface coating compositions containing pyridine salts or aromatic sulfonic acids |
| US4200729A (en) | 1978-05-22 | 1980-04-29 | King Industries, Inc | Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts |
| US4251665A (en) | 1978-05-22 | 1981-02-17 | King Industries, Inc. | Aromatic sulfonic acid oxa-azacyclopentane adducts |
| US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| EP0440374B1 (en) | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
| US5187019A (en) | 1991-09-06 | 1993-02-16 | King Industries, Inc. | Latent catalysts |
| US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| US6808859B1 (en) | 1996-12-31 | 2004-10-26 | Hyundai Electronics Industries Co., Ltd. | ArF photoresist copolymers |
| US6849377B2 (en) | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| US6790587B1 (en) | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
| JP4425405B2 (ja) * | 2000-02-04 | 2010-03-03 | Ｊｓｒ株式会社 | ポジ型感放射線性樹脂組成物 |
| WO2001098834A1 (en) | 2000-06-21 | 2001-12-27 | Asahi Glass Company, Limited | Resist composition |
| US6447980B1 (en) | 2000-07-19 | 2002-09-10 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV and process thereof |
| CN1221861C (zh) | 2001-02-09 | 2005-10-05 | 旭硝子株式会社 | 光致抗蚀剂组合物 |
| US6723488B2 (en) | 2001-11-07 | 2004-04-20 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep UV radiation containing an additive |
| JP4084597B2 (ja) * | 2002-05-07 | 2008-04-30 | 群栄化学工業株式会社 | アミノ基含有フェノール誘導体 |
| EP1560070B1 (en) * | 2002-10-09 | 2009-12-30 | Nissan Chemical Industries, Ltd. | Composition for forming antireflection film for lithography |
| US7264913B2 (en) | 2002-11-21 | 2007-09-04 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
| JP4105036B2 (ja) * | 2003-05-28 | 2008-06-18 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
| JP4069025B2 (ja) * | 2003-06-18 | 2008-03-26 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
| JP2005321752A (ja) * | 2004-04-09 | 2005-11-17 | Nissan Chem Ind Ltd | イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物 |
| US7691556B2 (en) * | 2004-09-15 | 2010-04-06 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
| JP4575220B2 (ja) * | 2005-04-14 | 2010-11-04 | 信越化学工業株式会社 | レジスト下層膜材料およびパターン形成方法 |
| US7875556B2 (en) | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
| KR101226050B1 (ko) * | 2005-09-27 | 2013-01-24 | 닛산 가가쿠 고교 가부시키 가이샤 | 이소시아눌산 화합물과 안식향산 화합물의 반응 생성물을 포함하는 반사방지막 형성 조성물 |
| US7736822B2 (en) * | 2006-02-13 | 2010-06-15 | Hoya Corporation | Resist underlayer coating forming composition for mask blank, mask blank and mask |
| US7638262B2 (en) | 2006-08-10 | 2009-12-29 | Az Electronic Materials Usa Corp. | Antireflective composition for photoresists |
| US20080286689A1 (en) | 2007-05-14 | 2008-11-20 | Hong Zhuang | Antireflective Coating Compositions |
| US20090035704A1 (en) * | 2007-08-03 | 2009-02-05 | Hong Zhuang | Underlayer Coating Composition Based on a Crosslinkable Polymer |
| US20090042133A1 (en) | 2007-08-10 | 2009-02-12 | Zhong Xiang | Antireflective Coating Composition |
| US8329387B2 (en) * | 2008-07-08 | 2012-12-11 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
| US20100119980A1 (en) * | 2008-11-13 | 2010-05-13 | Rahman M Dalil | Antireflective Coating Composition Comprising Fused Aromatic Rings |
| US8551686B2 (en) | 2009-10-30 | 2013-10-08 | Az Electronic Materials Usa Corp. | Antireflective composition for photoresists |
-
2011
- 2011-02-08 US US13/023,291 patent/US8465902B2/en not_active Expired - Fee Related
-
2012
- 2012-02-07 EP EP12708387.1A patent/EP2673675B1/en active Active
- 2012-02-07 SG SG2013043054A patent/SG190992A1/en unknown
- 2012-02-07 CN CN201280005810.5A patent/CN103370653B/zh active Active
- 2012-02-07 KR KR1020137018121A patent/KR101824759B1/ko active Active
- 2012-02-07 JP JP2013553041A patent/JP6109750B2/ja active Active
- 2012-02-07 WO PCT/IB2012/000213 patent/WO2012107823A1/en not_active Ceased
- 2012-02-08 TW TW101104081A patent/TWI545161B/zh active
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