CN103370653B - 底层涂料组合物及制造微电子器件的方法 - Google Patents

底层涂料组合物及制造微电子器件的方法 Download PDF

Info

Publication number
CN103370653B
CN103370653B CN201280005810.5A CN201280005810A CN103370653B CN 103370653 B CN103370653 B CN 103370653B CN 201280005810 A CN201280005810 A CN 201280005810A CN 103370653 B CN103370653 B CN 103370653B
Authority
CN
China
Prior art keywords
polymer
alkyl
composition
fluorine
moiety
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280005810.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN103370653A (zh
Inventor
姚晖蓉
Z·博格斯
林观阳
M·O·奈瑟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
AZ Electronic Materials USA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH, AZ Electronic Materials USA Corp filed Critical Merck Patent GmbH
Publication of CN103370653A publication Critical patent/CN103370653A/zh
Application granted granted Critical
Publication of CN103370653B publication Critical patent/CN103370653B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L67/00—Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/20—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C09D161/22—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds
    • C09D161/24—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds with urea or thiourea
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201280005810.5A 2011-02-08 2012-02-07 底层涂料组合物及制造微电子器件的方法 Active CN103370653B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/023,291 US8465902B2 (en) 2011-02-08 2011-02-08 Underlayer coating composition and processes thereof
US13/023,291 2011-02-08
PCT/IB2012/000213 WO2012107823A1 (en) 2011-02-08 2012-02-07 Underlayer coating composition and process for manufacturing a microelectronic device

Publications (2)

Publication Number Publication Date
CN103370653A CN103370653A (zh) 2013-10-23
CN103370653B true CN103370653B (zh) 2016-06-08

Family

ID=45815912

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280005810.5A Active CN103370653B (zh) 2011-02-08 2012-02-07 底层涂料组合物及制造微电子器件的方法

Country Status (8)

Country Link
US (1) US8465902B2 (enExample)
EP (1) EP2673675B1 (enExample)
JP (1) JP6109750B2 (enExample)
KR (1) KR101824759B1 (enExample)
CN (1) CN103370653B (enExample)
SG (1) SG190992A1 (enExample)
TW (1) TWI545161B (enExample)
WO (1) WO2012107823A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8906590B2 (en) * 2011-03-30 2014-12-09 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8906592B2 (en) 2012-08-01 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
US9152051B2 (en) 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
JP6458799B2 (ja) * 2014-03-24 2019-01-30 Jsr株式会社 パターン形成方法
JP6525376B2 (ja) * 2015-08-31 2019-06-05 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ オーバーコートされたフォトレジストと共に使用するためのコーティング組成物
TWI646397B (zh) * 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
JP7011226B2 (ja) * 2016-04-28 2022-01-26 日産化学株式会社 レジスト下層膜形成組成物
JP6531723B2 (ja) * 2016-06-29 2019-06-19 信越化学工業株式会社 レジスト材料及びパターン形成方法
US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
EP3605228B1 (en) * 2017-03-30 2022-02-09 JSR Corporation Radiation sensitive composition and resist pattern forming method
WO2019225614A1 (ja) * 2018-05-25 2019-11-28 日産化学株式会社 環式カルボニル化合物を用いたレジスト下層膜形成組成物
KR102288386B1 (ko) 2018-09-06 2021-08-10 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
CN109638156B (zh) * 2018-12-10 2020-09-01 武汉华星光电半导体显示技术有限公司 柔性显示面板及其制作方法
KR102260811B1 (ko) 2018-12-26 2021-06-03 삼성에스디아이 주식회사 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법
US12366804B2 (en) * 2019-06-17 2025-07-22 Nissan Chemical Corporation Composition containing a heterocyclic compound having a dicyanostyryl group, for forming a resist underlayer film capable of being wet etched
TWI837443B (zh) * 2019-12-31 2024-04-01 南韓商羅門哈斯電子材料韓國公司 塗料組成物、經塗覆的基底及形成電子裝置的方法
KR20250067822A (ko) * 2022-09-13 2025-05-15 제이에스알 가부시키가이샤 감방사선성 조성물, 레지스트 패턴 형성 방법, 감방사선성 산 발생체 및 중합체
KR20250085723A (ko) * 2022-09-30 2025-06-12 제이에스알 가부시키가이샤 레지스트 하층막 형성용 조성물 및 반도체 기판의 제조 방법
EP4657158A4 (en) * 2023-02-27 2026-04-29 Nissan Chemical Corp PHOTOSENSITIVE RESIN UNDERCOAT FILM FORMING COMPOSITION
EP4692943A1 (en) * 2023-03-27 2026-02-11 Nissan Chemical Corporation Resist underlayer film forming composition

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101268419A (zh) * 2005-09-27 2008-09-17 日产化学工业株式会社 含有异氰脲酸化合物与苯甲酸化合物的反应生成物的形成防反射膜的组合物
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
CN101959980A (zh) * 2007-05-14 2011-01-26 Az电子材料美国公司 抗反射涂料组合物

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474054A (en) 1966-09-13 1969-10-21 Permalac Corp The Surface coating compositions containing pyridine salts or aromatic sulfonic acids
US4251665A (en) 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US4200729A (en) 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0440374B1 (en) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
US5187019A (en) 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
JP4425405B2 (ja) * 2000-02-04 2010-03-03 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
AU2001274579A1 (en) 2000-06-21 2002-01-02 Asahi Glass Company, Limited Resist composition
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
EP1365290B1 (en) 2001-02-09 2007-11-21 Asahi Glass Company Ltd. Resist composition
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
JP4084597B2 (ja) * 2002-05-07 2008-04-30 群栄化学工業株式会社 アミノ基含有フェノール誘導体
JP4171920B2 (ja) * 2002-10-09 2008-10-29 日産化学工業株式会社 リソグラフィー用反射防止膜形成組成物
US7264913B2 (en) 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
JP4105036B2 (ja) * 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP4069025B2 (ja) * 2003-06-18 2008-03-26 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP2005321752A (ja) * 2004-04-09 2005-11-17 Nissan Chem Ind Ltd イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
JP4575220B2 (ja) * 2005-04-14 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
US7736822B2 (en) * 2006-02-13 2010-06-15 Hoya Corporation Resist underlayer coating forming composition for mask blank, mask blank and mask
US7638262B2 (en) 2006-08-10 2009-12-29 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US8329387B2 (en) 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US8551686B2 (en) 2009-10-30 2013-10-08 Az Electronic Materials Usa Corp. Antireflective composition for photoresists

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101268419A (zh) * 2005-09-27 2008-09-17 日产化学工业株式会社 含有异氰脲酸化合物与苯甲酸化合物的反应生成物的形成防反射膜的组合物
CN101959980A (zh) * 2007-05-14 2011-01-26 Az电子材料美国公司 抗反射涂料组合物
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
CN101778876A (zh) * 2007-08-10 2010-07-14 Az电子材料美国公司 抗反射涂料组合物

Also Published As

Publication number Publication date
TW201239047A (en) 2012-10-01
TWI545161B (zh) 2016-08-11
SG190992A1 (en) 2013-07-31
CN103370653A (zh) 2013-10-23
KR101824759B1 (ko) 2018-02-01
US20120202155A1 (en) 2012-08-09
JP2014513312A (ja) 2014-05-29
JP6109750B2 (ja) 2017-04-05
US8465902B2 (en) 2013-06-18
WO2012107823A1 (en) 2012-08-16
EP2673675A1 (en) 2013-12-18
KR20140032972A (ko) 2014-03-17
EP2673675B1 (en) 2020-07-15

Similar Documents

Publication Publication Date Title
JP6109750B2 (ja) 下層コーティング組成物および微細電子デバイスを製造するための方法
JP5765854B2 (ja) 反射防止コーティング組成物
US7932018B2 (en) Antireflective coating composition
JP5568791B2 (ja) 反射防止コーティング組成物
CN102630246B (zh) 抗反射涂料组合物及其工艺方法
US9274426B2 (en) Antireflective coating compositions and processes thereof
US8906590B2 (en) Antireflective coating composition and process thereof
US20100092894A1 (en) Bottom Antireflective Coating Compositions
US20100316949A1 (en) Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
WO2008038131A1 (en) Antireflective coating compositions
CN102197087A (zh) 包含稠合芳族环的抗反射涂料组合物
CN110361931A (zh) 抗反射硬掩膜组合物
US7405029B2 (en) Antireflective hardmask composition and methods for using same
CN102939549B (zh) 抗反射涂料组合物和制造微电子器件的方法
US9170494B2 (en) Antireflective compositions and methods of using same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: MERCK PATENT GMBH

Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS USA CO.

Effective date: 20150423

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20150423

Address after: Darmstadt

Applicant after: Merck Patent GmbH

Address before: American New Jersey

Applicant before: AZ Electronic Materials USA

C14 Grant of patent or utility model
GR01 Patent grant