JP6109750B2 - 下層コーティング組成物および微細電子デバイスを製造するための方法 - Google Patents

下層コーティング組成物および微細電子デバイスを製造するための方法 Download PDF

Info

Publication number
JP6109750B2
JP6109750B2 JP2013553041A JP2013553041A JP6109750B2 JP 6109750 B2 JP6109750 B2 JP 6109750B2 JP 2013553041 A JP2013553041 A JP 2013553041A JP 2013553041 A JP2013553041 A JP 2013553041A JP 6109750 B2 JP6109750 B2 JP 6109750B2
Authority
JP
Japan
Prior art keywords
polymer
alkyl
composition
fluoro
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013553041A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014513312A5 (enExample
JP2014513312A (ja
Inventor
ヤオ・フェイロン
ボグスズ・ザチェリー
リン・ガンヤン
ナイセル・マーク・オー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of JP2014513312A publication Critical patent/JP2014513312A/ja
Publication of JP2014513312A5 publication Critical patent/JP2014513312A5/ja
Application granted granted Critical
Publication of JP6109750B2 publication Critical patent/JP6109750B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L67/00Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/20Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C09D161/22Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds
    • C09D161/24Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds with urea or thiourea
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
JP2013553041A 2011-02-08 2012-02-07 下層コーティング組成物および微細電子デバイスを製造するための方法 Active JP6109750B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/023,291 2011-02-08
US13/023,291 US8465902B2 (en) 2011-02-08 2011-02-08 Underlayer coating composition and processes thereof
PCT/IB2012/000213 WO2012107823A1 (en) 2011-02-08 2012-02-07 Underlayer coating composition and process for manufacturing a microelectronic device

Publications (3)

Publication Number Publication Date
JP2014513312A JP2014513312A (ja) 2014-05-29
JP2014513312A5 JP2014513312A5 (enExample) 2016-11-04
JP6109750B2 true JP6109750B2 (ja) 2017-04-05

Family

ID=45815912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013553041A Active JP6109750B2 (ja) 2011-02-08 2012-02-07 下層コーティング組成物および微細電子デバイスを製造するための方法

Country Status (8)

Country Link
US (1) US8465902B2 (enExample)
EP (1) EP2673675B1 (enExample)
JP (1) JP6109750B2 (enExample)
KR (1) KR101824759B1 (enExample)
CN (1) CN103370653B (enExample)
SG (1) SG190992A1 (enExample)
TW (1) TWI545161B (enExample)
WO (1) WO2012107823A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8906590B2 (en) * 2011-03-30 2014-12-09 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8906592B2 (en) 2012-08-01 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
US9152051B2 (en) 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
KR102364126B1 (ko) * 2014-03-24 2022-02-18 제이에스알 가부시끼가이샤 패턴 형성 방법, 수지 및 레지스트 하층막 형성 조성물
TWI659991B (zh) * 2015-08-31 2019-05-21 Rohm And Haas Electronic Materials Llc 與外塗佈光致抗蝕劑一起使用的塗料組合物
TWI646397B (zh) * 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
US10684546B2 (en) * 2016-04-28 2020-06-16 Nissan Chemical Corporation Composition for forming resist underlayer film
JP6531723B2 (ja) * 2016-06-29 2019-06-19 信越化学工業株式会社 レジスト材料及びパターン形成方法
US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
EP3605228B1 (en) * 2017-03-30 2022-02-09 JSR Corporation Radiation sensitive composition and resist pattern forming method
CN112166379B (zh) * 2018-05-25 2025-04-01 日产化学株式会社 使用了环式羰基化合物的抗蚀剂下层膜形成用组合物
KR102288386B1 (ko) 2018-09-06 2021-08-10 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
CN109638156B (zh) * 2018-12-10 2020-09-01 武汉华星光电半导体显示技术有限公司 柔性显示面板及其制作方法
KR102260811B1 (ko) 2018-12-26 2021-06-03 삼성에스디아이 주식회사 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법
WO2020255984A1 (ja) * 2019-06-17 2020-12-24 日産化学株式会社 ジシアノスチリル基を有する複素環化合物を含むウェットエッチング可能なレジスト下層膜形成組成物
TWI837443B (zh) * 2019-12-31 2024-04-01 南韓商羅門哈斯電子材料韓國公司 塗料組成物、經塗覆的基底及形成電子裝置的方法
WO2024070786A1 (ja) * 2022-09-30 2024-04-04 Jsr株式会社 レジスト下層膜形成用組成物及び半導体基板の製造方法
EP4657158A1 (en) * 2023-02-27 2025-12-03 Nissan Chemical Corporation Resist underlayer film formation composition
WO2024204232A1 (ja) * 2023-03-27 2024-10-03 日産化学株式会社 レジスト下層膜形成組成物

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474054A (en) 1966-09-13 1969-10-21 Permalac Corp The Surface coating compositions containing pyridine salts or aromatic sulfonic acids
US4200729A (en) 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4251665A (en) 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0440374B1 (en) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
US5187019A (en) 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
JP4425405B2 (ja) * 2000-02-04 2010-03-03 Jsr株式会社 ポジ型感放射線性樹脂組成物
WO2001098834A1 (en) 2000-06-21 2001-12-27 Asahi Glass Company, Limited Resist composition
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
CN1221861C (zh) 2001-02-09 2005-10-05 旭硝子株式会社 光致抗蚀剂组合物
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
JP4084597B2 (ja) * 2002-05-07 2008-04-30 群栄化学工業株式会社 アミノ基含有フェノール誘導体
EP1560070B1 (en) * 2002-10-09 2009-12-30 Nissan Chemical Industries, Ltd. Composition for forming antireflection film for lithography
US7264913B2 (en) 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
JP4105036B2 (ja) * 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP4069025B2 (ja) * 2003-06-18 2008-03-26 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP2005321752A (ja) * 2004-04-09 2005-11-17 Nissan Chem Ind Ltd イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
JP4575220B2 (ja) * 2005-04-14 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
KR101226050B1 (ko) * 2005-09-27 2013-01-24 닛산 가가쿠 고교 가부시키 가이샤 이소시아눌산 화합물과 안식향산 화합물의 반응 생성물을 포함하는 반사방지막 형성 조성물
US7736822B2 (en) * 2006-02-13 2010-06-15 Hoya Corporation Resist underlayer coating forming composition for mask blank, mask blank and mask
US7638262B2 (en) 2006-08-10 2009-12-29 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US20080286689A1 (en) 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US20090042133A1 (en) 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
US8329387B2 (en) * 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US8551686B2 (en) 2009-10-30 2013-10-08 Az Electronic Materials Usa Corp. Antireflective composition for photoresists

Also Published As

Publication number Publication date
CN103370653A (zh) 2013-10-23
EP2673675A1 (en) 2013-12-18
EP2673675B1 (en) 2020-07-15
US20120202155A1 (en) 2012-08-09
SG190992A1 (en) 2013-07-31
KR20140032972A (ko) 2014-03-17
KR101824759B1 (ko) 2018-02-01
US8465902B2 (en) 2013-06-18
CN103370653B (zh) 2016-06-08
WO2012107823A1 (en) 2012-08-16
JP2014513312A (ja) 2014-05-29
TWI545161B (zh) 2016-08-11
TW201239047A (en) 2012-10-01

Similar Documents

Publication Publication Date Title
JP6109750B2 (ja) 下層コーティング組成物および微細電子デバイスを製造するための方法
JP5765854B2 (ja) 反射防止コーティング組成物
JP5568791B2 (ja) 反射防止コーティング組成物
JP5332046B2 (ja) 架橋可能なポリマーに基づく下層膜用組成物
CN102630246B (zh) 抗反射涂料组合物及其工艺方法
JP5815565B2 (ja) 反射防止組成物及びそれを用いた方法
JP4465528B2 (ja) フォトレジスト用の反射防止膜組成物
US20100092894A1 (en) Bottom Antireflective Coating Compositions
JP2011520148A (ja) 反射防止コーティング組成物
CN101501572A (zh) 用于光刻胶的抗反射组合物
WO2010143054A1 (en) Spin on organic antireflective coating composition comprising polymer with fused aromatic rings
JP2010535883A (ja) 反射防止コーティング組成物
TWI509037B (zh) 抗反射塗料組合物及其方法
US9170494B2 (en) Antireflective compositions and methods of using same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150109

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20150318

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150925

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151007

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20151225

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160128

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20160128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160615

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20160909

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160912

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170301

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170308

R150 Certificate of patent or registration of utility model

Ref document number: 6109750

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250