JP2014507799A5 - - Google Patents

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Publication number
JP2014507799A5
JP2014507799A5 JP2013549488A JP2013549488A JP2014507799A5 JP 2014507799 A5 JP2014507799 A5 JP 2014507799A5 JP 2013549488 A JP2013549488 A JP 2013549488A JP 2013549488 A JP2013549488 A JP 2013549488A JP 2014507799 A5 JP2014507799 A5 JP 2014507799A5
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JP
Japan
Prior art keywords
composition
film
forming metal
oxyethylene
independently
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013549488A
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English (en)
Japanese (ja)
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JP2014507799A (ja
JP5992925B2 (ja
Filing date
Publication date
Priority claimed from US13/004,113 external-priority patent/US8435421B2/en
Application filed filed Critical
Priority claimed from PCT/US2012/020737 external-priority patent/WO2012096931A2/en
Publication of JP2014507799A publication Critical patent/JP2014507799A/ja
Publication of JP2014507799A5 publication Critical patent/JP2014507799A5/ja
Application granted granted Critical
Publication of JP5992925B2 publication Critical patent/JP5992925B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013549488A 2011-01-11 2012-01-10 金属を不動態化する化学機械研磨用組成物及び方法 Active JP5992925B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/004,113 US8435421B2 (en) 2007-11-27 2011-01-11 Metal-passivating CMP compositions and methods
US13/004,113 2011-01-11
PCT/US2012/020737 WO2012096931A2 (en) 2011-01-11 2012-01-10 Metal-passivating cmp compositions and methods

Publications (3)

Publication Number Publication Date
JP2014507799A JP2014507799A (ja) 2014-03-27
JP2014507799A5 true JP2014507799A5 (enExample) 2015-03-05
JP5992925B2 JP5992925B2 (ja) 2016-09-14

Family

ID=46507631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013549488A Active JP5992925B2 (ja) 2011-01-11 2012-01-10 金属を不動態化する化学機械研磨用組成物及び方法

Country Status (9)

Country Link
EP (1) EP2663604B1 (enExample)
JP (1) JP5992925B2 (enExample)
KR (2) KR102077618B1 (enExample)
CN (1) CN103298903B (enExample)
IL (1) IL227384A (enExample)
MY (1) MY163010A (enExample)
SG (1) SG191909A1 (enExample)
TW (1) TWI462981B (enExample)
WO (1) WO2012096931A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3323142B1 (en) * 2015-07-13 2024-08-28 CMC Materials LLC Methods and compositions for processing dielectric substrate
EP3344716A4 (en) * 2015-09-03 2019-04-10 Cabot Microelectronics Corporation METHODS AND COMPOSITIONS FOR TREATING DIELECTRIC SUBSTRATE
JP6901297B2 (ja) 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6866792B2 (en) * 2001-12-12 2005-03-15 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
GB2393447B (en) * 2002-08-07 2006-04-19 Kao Corp Polishing composition
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
JP4667013B2 (ja) * 2003-11-14 2011-04-06 昭和電工株式会社 研磨組成物および研磨方法
US20060063687A1 (en) * 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
WO2007019342A2 (en) * 2005-08-05 2007-02-15 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
US20070037491A1 (en) * 2005-08-12 2007-02-15 Yuzhuo Li Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing
JP2008192930A (ja) * 2007-02-06 2008-08-21 Fujifilm Corp 金属研磨用組成物及びそれを用いた化学的機械的研磨方法
US7931714B2 (en) * 2007-10-08 2011-04-26 Uwiz Technology Co., Ltd. Composition useful to chemical mechanical planarization of metal
JP5277640B2 (ja) * 2007-10-17 2013-08-28 日立化成株式会社 Cmp用研磨液及び研磨方法
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US8337716B2 (en) * 2008-01-23 2012-12-25 Uwiz Technology Co., Ltd. Sarcosine compound used as corrosion inhibitor
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
CN101747841A (zh) * 2008-12-05 2010-06-23 安集微电子(上海)有限公司 一种化学机械抛光液
TWI454561B (zh) * 2008-12-30 2014-10-01 Uwiz Technology Co Ltd A polishing composition for planarizing the metal layer
CN101928520B (zh) * 2009-06-19 2014-03-12 盟智科技股份有限公司 用于平坦化金属层的研磨组成物
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法

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