CN103298903B - 金属钝化的化学机械抛光组合物及方法 - Google Patents
金属钝化的化学机械抛光组合物及方法 Download PDFInfo
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- CN103298903B CN103298903B CN201280005131.8A CN201280005131A CN103298903B CN 103298903 B CN103298903 B CN 103298903B CN 201280005131 A CN201280005131 A CN 201280005131A CN 103298903 B CN103298903 B CN 103298903B
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K8/00—Compositions for drilling of boreholes or wells; Compositions for treating boreholes or wells, e.g. for completion or for remedial operations
- C09K8/52—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning
- C09K8/528—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning inorganic depositions, e.g. sulfates or carbonates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/004,113 US8435421B2 (en) | 2007-11-27 | 2011-01-11 | Metal-passivating CMP compositions and methods |
| US13/004,113 | 2011-01-11 | ||
| PCT/US2012/020737 WO2012096931A2 (en) | 2011-01-11 | 2012-01-10 | Metal-passivating cmp compositions and methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103298903A CN103298903A (zh) | 2013-09-11 |
| CN103298903B true CN103298903B (zh) | 2015-11-25 |
Family
ID=46507631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280005131.8A Active CN103298903B (zh) | 2011-01-11 | 2012-01-10 | 金属钝化的化学机械抛光组合物及方法 |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP2663604B1 (enExample) |
| JP (1) | JP5992925B2 (enExample) |
| KR (2) | KR102077618B1 (enExample) |
| CN (1) | CN103298903B (enExample) |
| IL (1) | IL227384A (enExample) |
| MY (1) | MY163010A (enExample) |
| SG (1) | SG191909A1 (enExample) |
| TW (1) | TWI462981B (enExample) |
| WO (1) | WO2012096931A2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3323142B1 (en) * | 2015-07-13 | 2024-08-28 | CMC Materials LLC | Methods and compositions for processing dielectric substrate |
| EP3344716A4 (en) * | 2015-09-03 | 2019-04-10 | Cabot Microelectronics Corporation | METHODS AND COMPOSITIONS FOR TREATING DIELECTRIC SUBSTRATE |
| JP6901297B2 (ja) | 2017-03-22 | 2021-07-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007019342A2 (en) * | 2005-08-05 | 2007-02-15 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
| WO2010014180A2 (en) * | 2008-07-30 | 2010-02-04 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
| CN101747841A (zh) * | 2008-12-05 | 2010-06-23 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6623355B2 (en) * | 2000-11-07 | 2003-09-23 | Micell Technologies, Inc. | Methods, apparatus and slurries for chemical mechanical planarization |
| US6866792B2 (en) * | 2001-12-12 | 2005-03-15 | Ekc Technology, Inc. | Compositions for chemical mechanical planarization of copper |
| GB2393447B (en) * | 2002-08-07 | 2006-04-19 | Kao Corp | Polishing composition |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| TWI347969B (en) * | 2003-09-30 | 2011-09-01 | Fujimi Inc | Polishing composition |
| JP4667013B2 (ja) * | 2003-11-14 | 2011-04-06 | 昭和電工株式会社 | 研磨組成物および研磨方法 |
| US20060063687A1 (en) * | 2004-09-17 | 2006-03-23 | Minsek David W | Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate |
| US20070037491A1 (en) * | 2005-08-12 | 2007-02-15 | Yuzhuo Li | Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing |
| JP2008192930A (ja) * | 2007-02-06 | 2008-08-21 | Fujifilm Corp | 金属研磨用組成物及びそれを用いた化学的機械的研磨方法 |
| US7931714B2 (en) * | 2007-10-08 | 2011-04-26 | Uwiz Technology Co., Ltd. | Composition useful to chemical mechanical planarization of metal |
| JP5277640B2 (ja) * | 2007-10-17 | 2013-08-28 | 日立化成株式会社 | Ｃｍｐ用研磨液及び研磨方法 |
| US7955520B2 (en) * | 2007-11-27 | 2011-06-07 | Cabot Microelectronics Corporation | Copper-passivating CMP compositions and methods |
| US8337716B2 (en) * | 2008-01-23 | 2012-12-25 | Uwiz Technology Co., Ltd. | Sarcosine compound used as corrosion inhibitor |
| TWI454561B (zh) * | 2008-12-30 | 2014-10-01 | Uwiz Technology Co Ltd | A polishing composition for planarizing the metal layer |
| CN101928520B (zh) * | 2009-06-19 | 2014-03-12 | 盟智科技股份有限公司 | 用于平坦化金属层的研磨组成物 |
| JP2012069785A (ja) * | 2010-09-24 | 2012-04-05 | Fujimi Inc | 研磨用組成物および研磨方法 |
-
2012
- 2012-01-10 KR KR1020137021062A patent/KR102077618B1/ko active Active
- 2012-01-10 KR KR1020187031790A patent/KR102017133B1/ko active Active
- 2012-01-10 EP EP12734493.5A patent/EP2663604B1/en active Active
- 2012-01-10 SG SG2013052816A patent/SG191909A1/en unknown
- 2012-01-10 CN CN201280005131.8A patent/CN103298903B/zh active Active
- 2012-01-10 MY MYPI2013002601A patent/MY163010A/en unknown
- 2012-01-10 WO PCT/US2012/020737 patent/WO2012096931A2/en not_active Ceased
- 2012-01-10 JP JP2013549488A patent/JP5992925B2/ja active Active
- 2012-01-11 TW TW101101131A patent/TWI462981B/zh active
-
2013
- 2013-07-08 IL IL227384A patent/IL227384A/en active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007019342A2 (en) * | 2005-08-05 | 2007-02-15 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
| WO2010014180A2 (en) * | 2008-07-30 | 2010-02-04 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
| CN101747841A (zh) * | 2008-12-05 | 2010-06-23 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
Also Published As
| Publication number | Publication date |
|---|---|
| IL227384A0 (en) | 2013-09-30 |
| KR102017133B1 (ko) | 2019-09-02 |
| EP2663604A2 (en) | 2013-11-20 |
| EP2663604B1 (en) | 2020-07-01 |
| WO2012096931A2 (en) | 2012-07-19 |
| JP2014507799A (ja) | 2014-03-27 |
| CN103298903A (zh) | 2013-09-11 |
| TW201235428A (en) | 2012-09-01 |
| KR20140047015A (ko) | 2014-04-21 |
| KR102077618B1 (ko) | 2020-02-14 |
| MY163010A (en) | 2017-07-31 |
| IL227384A (en) | 2017-05-29 |
| JP5992925B2 (ja) | 2016-09-14 |
| SG191909A1 (en) | 2013-08-30 |
| EP2663604A4 (en) | 2016-04-27 |
| TWI462981B (zh) | 2014-12-01 |
| WO2012096931A3 (en) | 2012-11-01 |
| KR20180123167A (ko) | 2018-11-14 |
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