KR102077618B1 - 금속-패시베이션화 ｃｍｐ 조성물 및 방법 - Google Patents

금속-패시베이션화 ｃｍｐ 조성물 및 방법 Download PDF

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KR102077618B1
KR102077618B1 KR1020137021062A KR20137021062A KR102077618B1 KR 102077618 B1 KR102077618 B1 KR 102077618B1 KR 1020137021062 A KR1020137021062 A KR 1020137021062A KR 20137021062 A KR20137021062 A KR 20137021062A KR 102077618 B1 KR102077618 B1 KR 102077618B1
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composition
film
delete delete
polishing
metal
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Korean (ko)
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KR20140047015A (ko
Inventor
제이슨 켈러
판카지 싱
블라스타 브루식
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캐보트 마이크로일렉트로닉스 코포레이션
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Priority claimed from US13/004,113 external-priority patent/US8435421B2/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K8/00—Compositions for drilling of boreholes or wells; Compositions for treating boreholes or wells, e.g. for completion or for remedial operations
    • C09K8/52—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning
    • C09K8/528—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning inorganic depositions, e.g. sulfates or carbonates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020137021062A 2011-01-11 2012-01-10 금속-패시베이션화 ｃｍｐ 조성물 및 방법 Active KR102077618B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/004,113 US8435421B2 (en) 2007-11-27 2011-01-11 Metal-passivating CMP compositions and methods
US13/004,113 2011-01-11
PCT/US2012/020737 WO2012096931A2 (en) 2011-01-11 2012-01-10 Metal-passivating cmp compositions and methods

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187031790A Division KR102017133B1 (ko) 2011-01-11 2012-01-10 금속-패시베이션화 ｃｍｐ 조성물 및 방법

Publications (2)

Publication Number Publication Date
KR20140047015A KR20140047015A (ko) 2014-04-21
KR102077618B1 true KR102077618B1 (ko) 2020-02-14

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KR1020187031790A Active KR102017133B1 (ko) 2011-01-11 2012-01-10 금속-패시베이션화 ｃｍｐ 조성물 및 방법
KR1020137021062A Active KR102077618B1 (ko) 2011-01-11 2012-01-10 금속-패시베이션화 ｃｍｐ 조성물 및 방법

Family Applications Before (1)

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Country Status (9)

Country Link
EP (1) EP2663604B1 (enExample)
JP (1) JP5992925B2 (enExample)
KR (2) KR102017133B1 (enExample)
CN (1) CN103298903B (enExample)
IL (1) IL227384A (enExample)
MY (1) MY163010A (enExample)
SG (1) SG191909A1 (enExample)
TW (1) TWI462981B (enExample)
WO (1) WO2012096931A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017011451A1 (en) 2015-07-13 2017-01-19 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate
EP3344716A4 (en) * 2015-09-03 2019-04-10 Cabot Microelectronics Corporation METHODS AND COMPOSITIONS FOR TREATING DIELECTRIC SUBSTRATE
JP6901297B2 (ja) 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005167231A (ja) * 2003-11-14 2005-06-23 Showa Denko Kk 研磨組成物および研磨方法

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US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6866792B2 (en) * 2001-12-12 2005-03-15 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
GB2393447B (en) * 2002-08-07 2006-04-19 Kao Corp Polishing composition
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7485162B2 (en) * 2003-09-30 2009-02-03 Fujimi Incorporated Polishing composition
US20060063687A1 (en) * 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
EP1929512A2 (en) * 2005-08-05 2008-06-11 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
US20070037491A1 (en) * 2005-08-12 2007-02-15 Yuzhuo Li Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing
JP2008192930A (ja) * 2007-02-06 2008-08-21 Fujifilm Corp 金属研磨用組成物及びそれを用いた化学的機械的研磨方法
US7931714B2 (en) * 2007-10-08 2011-04-26 Uwiz Technology Co., Ltd. Composition useful to chemical mechanical planarization of metal
JP5277640B2 (ja) * 2007-10-17 2013-08-28 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US8337716B2 (en) * 2008-01-23 2012-12-25 Uwiz Technology Co., Ltd. Sarcosine compound used as corrosion inhibitor
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
CN101747841A (zh) * 2008-12-05 2010-06-23 安集微电子（上海）有限公司 一种化学机械抛光液
TWI454561B (zh) * 2008-12-30 2014-10-01 Uwiz Technology Co Ltd A polishing composition for planarizing the metal layer
CN101928520B (zh) * 2009-06-19 2014-03-12 盟智科技股份有限公司 用于平坦化金属层的研磨组成物
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法

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JP2005167231A (ja) * 2003-11-14 2005-06-23 Showa Denko Kk 研磨組成物および研磨方法

Also Published As

Publication number Publication date
EP2663604A4 (en) 2016-04-27
EP2663604B1 (en) 2020-07-01
EP2663604A2 (en) 2013-11-20
JP5992925B2 (ja) 2016-09-14
JP2014507799A (ja) 2014-03-27
IL227384A (en) 2017-05-29
CN103298903B (zh) 2015-11-25
KR102017133B1 (ko) 2019-09-02
TWI462981B (zh) 2014-12-01
IL227384A0 (en) 2013-09-30
WO2012096931A3 (en) 2012-11-01
KR20140047015A (ko) 2014-04-21
KR20180123167A (ko) 2018-11-14
CN103298903A (zh) 2013-09-11
TW201235428A (en) 2012-09-01
WO2012096931A2 (en) 2012-07-19
MY163010A (en) 2017-07-31
SG191909A1 (en) 2013-08-30

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