JP2014506012A - ガスフラックス媒体を用いるレーザ半田付けにより２つの基板の端子面を電気的に接触させるための方法および装置 - Google Patents

ガスフラックス媒体を用いるレーザ半田付けにより２つの基板の端子面を電気的に接触させるための方法および装置 Download PDF

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JP2014506012A
JP2014506012A JP2013552102A JP2013552102A JP2014506012A JP 2014506012 A JP2014506012 A JP 2014506012A JP 2013552102 A JP2013552102 A JP 2013552102A JP 2013552102 A JP2013552102 A JP 2013552102A JP 2014506012 A JP2014506012 A JP 2014506012A
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アズダシト，ガッセム
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パック テック−パッケージング テクノロジーズ ゲーエムベーハー
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Abstract

本発明は、２つの基板（６，７）の端子面、具体的にはチップ（６）とキャリア基板（７）の端子面を電気的に接触させるための方法に関する。さらに、本発明は、本発明に係る方法の第２段階を行うための装置に関する。本発明に係る方法は、連続する二段階で行われる。第１段階では、チップ（６）を、その端子面が基板（７）の端子面と対向するように配置し、レーザエネルギ（５）を裏側からチップ（６）に照射する。次の第２段階では、フラックス媒体をハウジング（３）内に与えると同時に、裏側からチップ（６）に照射されたレーザエネルギ（５）によってリフローを行い、その後、ハウジング内部を洗浄する処理を行う。上記方法の第２段階を行うための本発明の装置は、キャリアテーブル（１）と、キャリアテーブル（１）の上面とともに、部品配置が位置するハウジング内部を形成するハウジング（３）と、レーザ照射が裏側から第１基板（６）に作用するように方向を合わせたレーザ光源（５）とを含む。

Description

本発明は、２つの基板の端子面を電気的に接触させるための方法に関する。この方法において、第２基板に面する端子面を有する第１基板が、第２基板の端子面と電気的かつ機械的に直接接続され、第１基板の端子面には、半田付け剤塗膜が塗布されている。特にチップモジュールを形成するためには、第１基板はチップであって、第２基板はキャリア基板であってもよく、上記チップは下向きにされ、そのチップ端子面が基板の端子面と対向するように接続される。
さらに、本発明は、本発明に係る方法の第２段階を行うための装置に関する。
従来技術では、キャリア基板の上に半導体チップを直接実装する方法が知られている。たとえば、パッケージされていないのチップを、その端子面がキャリア基板に面するようにキャリア基板またはプリント回路基板の上に直接固定し、チップの端子面には半田付け剤（半田ボール）を予め塗布する方法がある。
直接実装するという目的のために、リフロー半田付け中に、半田付け剤塗膜が半田付け炉で再溶融され、キャリア基板の端子面との接続を形成する。このような方法は、処理の流れおよび必要な機器に関する観点から非常に複雑である。
したがって、本発明の目的は、２つの基板の端子面、特に半導体部品をキャリア基板に電気的に接触させる処理を技術的に簡略化する方法およびこの方法を実施するための装置を提案し、それによって、経済効率を向上させることである。
本発明に係る方法は、連続する二段階で行われる。段階Ｉにおいて、チップをその端子面が基板の端子面と対向するように配置し、半田付け剤塗膜をチップの端子面および/または基板の端子面に塗布する。段階Ｉにおいて、少なくとも基板上におけるチップの固定を可能にする程度まで、半田付け剤を溶融させるまたは部分的に溶融させるように、レーザエネルギを裏側からチップに照射すると同時に、チップと基板とのすべての端子面の間に接触を形成するように、チップの端子面または基板の端子面に塗布された半田付け剤塗膜をレベリングまたは均一に平坦化する。
段階Ｉに続いて、チップおよび基板からなる部品配置をハウジング内に配置する。このハウジングは、半田材料塗膜のリフローをする間に、フラックス媒体をその部品配置に与えるように設計されている。前述のフラックス媒体は、具体的には気体であって、好ましくは窒素とギ酸との混合物からなる。特に有利なのは、このハウジングが、ハウジング内部で前述の媒体が流通するように構成され、前述した段階Ｉと同様に、媒体が与えられると同時に、裏側からチップに照射されるレーザエネルギによるリフローが行われることである。
特に段階Ｉにおいて半田付け剤塗膜の上に形成される可能性のある酸化物層を破壊することを可能にするフラックス媒体の適用に続いて、ハウジング内部を洗浄する処理が行われる。この処理には、もっぱら保護ガスを利用することが好ましい。
さらなる有利な実施特徴は、実例を用いて本発明の好ましい実施形態を示す以下の説明および図面によりもたらされる。
本発明に係る装置を示す概略図である。
図１は、段階Ｉにおいて基板にチップを前述のように固定した後の段階ＩＩにおける方法を実施するための装置を示している。段階Ｉは、図示されていない。段階Ｉが終了すると、部品配置を図１に示された位置に搬送し、ハウジング３の下方に配置してから、図１に示されるように、ハウジング３を部品配置の上に向かって下降させる。
段階ＩＩにおいて、チップ６および基板７により形成された部品配置はハウジング３の内側に配置される。このハウジング３は、キャリアテーブル１と密接するシール２によって外部から密閉される。ハウジング３は、さもなければ環境に対して実質的に気密状態の壁において、それぞれ気体媒体の流入およびハウジング内部の洗浄またはフラッディングを可能にするための流入開口８および流出開口９を有している。チップ６の裏面と実質的に平行するように配置されたハウジングの壁は、裏側からチップにレーザエネルギ５を照射できるにするガラス板または透明板から形成される。基板７に熱またはエネルギが直接導入されないようにするために、レーザ照射は、チップ６の裏面の寸法に合わせて合焦される。裏側からチップ６に照射されたレーザエネルギ５は、フラックス媒体がハウジング内部に流通している間に、チップの端子面と基板の端子面との間に塗布された半田付け剤塗膜１０のリフローを引起す。本実施形態において、フラックス媒体は、窒素とギ酸との混合物からなる。前述の気体混合物を形成するために、ハウジング３の中に導入される前に、たとえばハウジング３の外側に配置されたギ酸槽の表面上に窒素フローを流通させ、それによって運ばれたギ酸蒸気が窒素と混合されるようにしてもよい。リフローが行われた後、具体的にはチップの裏側にレーザエネルギを照射した後に、フラックス媒体の堆積、具体的には部品配置６／７の上にギ酸の沈着を避けるために、好ましくは純粋な保護ガスをハウジング３の内側に流通させるまたはハウジング３の内側を洗浄させる。ここでは、窒素フローを使用することが好ましい。
ここで、例として記載されたギ酸の代わりに、基本的には、同等効果を有する任意のガス状フラックス媒体を用いることができる。
図１に例示された、チップ６と基板７との組合わせとしての部品配置の他に、ウェハレベル、すなわち２つのウェハを接続する時に、本発明に係る方法を実施することも可能である。
さらに、選択された例示の他に、チップと基板とを接続するまたはリフロー処理において基板の端子面とチップの端子面との間に配置された半田付け剤塗膜または堆積物を溶融させるだけではなく、各々上下に配置された複数のチップを含む積層配置を基板に接続することも可能である。

Claims (10)

  1. ２つの基板（６，７）の端子面を電気的に接触させるための方法であって、
    第２基板（７）に面する端子面を有する第１基板（６）は、前記第２基板（７）の端子面と電気的かつ機械的に直接接続され、前記第１基板（６）の前記端子面には、半田付け剤塗膜（１０）が塗布され、前記方法は、第１段階と第２段階とを含む連続する二段階で行われ、
    前記第１段階において、
    前記第１基板（６）を、その端子面が前記第２基板（７）の前記端子面と対向するように配置し、
    少なくとも前記第２基板（７）上における前記第１基板（６）の機械的固定、および、互いに面している前記端子面の電気的接触を可能にする程度まで、前記半田付け剤（１０）を溶融させるように、レーザエネルギ（５）を裏側から前記第１基板（６）に照射し、
    前記第２段階において、
    ハウジング内部に配置されている、前記基板（６，７）により形成された部品配置に、フラックス媒体を与え、
    同時に裏側から前記第１基板（６）に照射されたレーザエネルギ（５）により、前記半田付け剤（１０）が再溶融され、
    その後、前記ハウジング内部を洗浄する処理が行われる、方法。
  2. 前記フラックス媒体は、気体状態である、請求項１に記載の方法。
  3. 前記気体状態のフラックス媒体は、窒素とギ酸との混合物からなる、請求項２に記載の方法。
  4. 前記気体状態のフラックス媒体を形成するために、前記部品配置に与えられる前に、前記ハウジング内部の外側でギ酸槽の表面上に窒素フローを流通させ、それによって運ばれたギ酸蒸気が前記窒素と混合される、請求項３に記載の方法。
  5. 前記洗浄処理は、純粋な保護ガスフローを用いて行われる、請求項１から４のいずれか１項に記載の方法。
  6. 前記純粋な保護ガスフローは、窒素フローである、請求項５に記載の方法。
  7. 請求項１に記載の方法の第２段階を行うための装置であって、
    前記基板（６，７）により形成された前記部品配置を支持するためのキャリアテーブル（１）と、
    前記部品配置を囲むとともに、前記キャリアテーブル（１）の上面と前記部品配置が配置されるハウジング内部を形成するハウジング（３）と、
    裏側からレーザ照射が前記第１基板（６）に与えるように方向を合わせたレーザ光源（５）とを含む、装置。
  8. 前記ハウジング（３）には、前記キャリアテーブル（１）の前記上面と密接する周方向シール（２）が設けられる、請求項７に記載の装置。
  9. 前記ハウジング（３）は、前記ハウジング内部にフラックス媒体または洗浄媒体を流通させることを可能にするための流入開口（８）と流出開口（９）とを有する、請求項７または８に記載の装置。
  10. 前記第１基板（６）の裏面と実質的に平行に配置された前記ハウジング（３）のハウジング壁（４）が、裏側から前記第１基板（６）にレーザエネルギ（５）を照射できるようにするために、透明板（４）として形成される、請求項７から９のいずれか１項に記載の装置。
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