CN103477424A - 用于通过利用气态熔剂介质激光焊接对两个衬底的连接面进行电接触的方法和设备 - Google Patents

用于通过利用气态熔剂介质激光焊接对两个衬底的连接面进行电接触的方法和设备 Download PDF

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CN103477424A
CN103477424A CN2012800073425A CN201280007342A CN103477424A CN 103477424 A CN103477424 A CN 103477424A CN 2012800073425 A CN2012800073425 A CN 2012800073425A CN 201280007342 A CN201280007342 A CN 201280007342A CN 103477424 A CN103477424 A CN 103477424A
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substrate
joint face
housing
chip
flux
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CN103477424B (zh
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加西姆·阿兹达什
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Pac Tech Packaging Technologies GmbH
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Abstract

本发明涉及一种用于使两个衬底（6，7）的连接面进行电接触的方法，其中所述两个衬底尤其是芯片（6）和载体衬底（7）、两个晶片或多个重叠设置的芯片以及衬底。根据本发明的方法以两个连续的阶段实现，其中在第一阶段中，将芯片（6）借助于其连接面相对于衬底（7）的连接面定位，以及实现用激光能（5）从背面加载芯片（6）；并且在后续的第二阶段中，实现在壳体（3）中用熔剂介质（例如氮气-甲酸混合物）加载，并且同时实现通过用激光能（5）从背面加载芯片（6）而引起的回流以及随后实现壳体内腔的吹扫过程。此外，本发明还涉及一种用于实现根据本发明的方法的第二阶段的设备。用于实现方法的第二阶段的根据本发明的设备包括：载体台（1）和壳体（3），所述壳体与载体台（1）的上侧共同形成壳体内腔，器件装置定位在所述壳体内腔中；以及激光光源（5），所述激光光源定向为，使得激光束从背侧射到第一衬底（6）上。

Description

用于通过利用气态熔剂介质激光焊接对两个衬底的连接面进行电接触的方法和设备
技术领域
本发明涉及一种用于电接触两个衬底的连接面的方法，其中第一衬底借助于其朝向第二衬底的连接面直接与第二衬底的连接面电连接和机械连接，并且第一衬底的连接面设有焊剂涂层。尤其为了构成芯片模块，第一衬底能够是芯片并且第二衬底能够是载体衬底，其中将芯片倒装（Face-Down）以其芯片连接面相对于衬底连接面接触。 
此外，本发明涉及一种用于实现根据本发明的方法的第二阶段的设备。 
背景技术
从常规的现有技术中已知用于将半导体芯片直接安装到载体衬底上的方法。因此，存在下述方法，其中将未封装的芯片借助于其朝向载体衬底的连接面和预先涂覆到芯片的连接面上的焊剂（焊接珠）直接固定在载体衬底或电路板上。在此，在焊接炉中进行回流焊时焊剂涂层被再次熔融并且与载体衬底的连接面连接。这种方法在其过程方面也和为此所需的设备方面都构成为极其复杂的。 
发明内容
因此，本发明基于的目的是，提出一种方法过程和一种用于实施所述方法过程的设备，所述设备在技术方面简化进而更经济地构成两个衬底的连接面的、尤其是具有载体衬底的半导体器件的电接触的工艺。 
根据本发明的方法以两个连续的阶段实现，其中在阶段I中将芯片借助于其连接面相对于衬底的连接面定位并且芯片连接面和/或衬底连接面设有焊剂涂层。在阶段I中，实现用激光能从背面加载芯片，使得焊剂至少熔融或熔焊至能够实现芯片在衬底上的固定，其中同时实现设置在芯片连接面或衬底连接面上的焊剂涂层的整平或均匀的展平，以至于在整个芯片连接面和衬底连接面之间形成接触。 
紧接着阶段I，将由芯片和衬底构成的器件装置设置在壳体中，所述壳体构成为，使得在焊料涂层回流期间用尤其是气态地构成的熔剂介质加载所述器件装置，所述熔剂介质优选由氮气/甲酸混合物构成。在此特别有 利的是，壳体构成为，使得实现用介质穿流过壳体内腔，其中在加载的同时，与之前说明的阶段I类似地实现通过用激光能从背面加载芯片而引起的回流。 
紧接着，在用尤其能够实现可能在阶段I中在焊剂涂层上构成的氧化层的裂开的所述熔剂介质进行加载之后，进行壳体内腔的吹扫过程，其中优选使用仅一种保护气体。 
其他优选的设计方案特征从下面的说明和附图中得出，所述说明和附图借助于示例阐述本发明的一个优选的实施形式。 
附图说明
附图示出： 
图1示出根据本发明的设备的示意图。 
具体实施方式
在图1中示出用于在阶段II期间实现所述方法的设备，在预先在此未详细示出的阶段I之后将芯片以前面所说明的方式固定在衬底上。在实施阶段I之后，器件装置被转入在图1中所示出的位置上，在所述位置上所述器件装置位于壳体3之下并且随后壳体3在器件装置之上下沉，如在图1中所示出的。 
在阶段II中，由芯片6和衬底7构成的器件装置存在于通过密封件2向外相对于载体台1密封的壳体3的内腔中。壳体3在否则朝向周围环境基本上气密的围壁中具有能够实现将壳体内腔用气态介质穿流或吹扫或流动涂布的入流口8以及出流口9。基本上平行于芯片6的背侧设置的壳体壁通过玻璃板或能够实现用激光能5从背面加载芯片的透明板构成，其中，激光束相应于芯片6的背侧的尺寸聚焦，以便避免热量或能量直接输入到衬底7中。用激光束5从背面加载芯片6的结果是，在将壳体内腔用熔剂气体穿流期间实现设置在芯片连接面和衬底连接面之间的焊剂涂层10的回流，在此情况下，所述熔剂气体由氮气和甲酸的混合物构成。为了构成所述气体混合物，例如能够使氮气流在壳体3之外在甲酸池的表面之上引导，以至于在流入壳体3中之前将所夹带的甲酸蒸汽与氮气混合。在实现回流之后，即尤其是在用激光能加载芯片的背侧之后，实现将壳体3的内腔用优选纯的保护气体流流过或吹扫，其中在此优选使用氮气流，以 便避免熔剂、即在此尤其是甲酸沉积在器件装置6、7上。 
代替在此示例地提到的甲酸原则上也能够使用产生类似的效果的任意的气态熔剂。 
与图1中的器件装置不同，还可能的是示例地示出作为由芯片6与衬底7构成的组合的器件装置，以晶片级实施根据本发明的方法，即两个晶片可相互连接。 
此外还可能的是，与所选定的视图不同，不仅将芯片与衬底连接或者将设置在衬底连接面和芯片连接面之间的焊料涂层或焊料沉积以回流法熔融，而且也将芯片的具有多个重叠设置的芯片的堆叠式布置构造与衬底连接。 

Claims (10)

1.一种用于使两个衬底（6、7）的连接面进行电接触的方法，其中第一衬底（6）借助于其朝向第二衬底（7）的所述连接面直接与所述第二衬底（7）的所述连接面电连接和机械连接，并且所述第一衬底（6）的所述连接面设有焊剂涂层（10），并且其中，方法过程以两个连续的阶段进行，所述方法过程具有第一阶段，其中，
-将所述第一衬底（6）借助于其连接面相对于所述第二衬底（7）的所述连接面定位，并且
-用激光能（5）从背面加载所述第一衬底（6），使得焊剂（10）至少熔融到能够将所述第一衬底（6）机械地固定在所述第二衬底（7）上，以及实现彼此相向的所述连接面的电接触；
并且具有第二阶段，其中
-在壳体内腔中实现用熔剂介质加载由所述衬底（6、7）构成的器件装置，
-同时通过用激光能（5）从背面加载所述第一衬底（6）来实现所述焊料（10）的再次熔融，并且
-紧接着实施所述壳体内腔的吹扫过程。
2.根据权利要求1所述的方法，
其特征在于，
所述熔剂介质具有气态状态。
3.根据权利要求2所述的方法，
其特征在于，
所述气态的熔剂介质由氮气-甲酸混合物构成。
4.根据权利要求3所述的方法，
其特征在于，
为了在所述壳体内腔之外形成气态的所述熔剂介质，将氮气流在甲酸池的表面之上引导，以至于在加载所述器件装置之前，所夹带的甲酸蒸汽与所述氮气混合。
5.根据权利要求1至4之一所述的方法，
其特征在于，
借助于纯的保护气体流实施所述吹扫过程。
6.根据权利要求5所述的方法，
其特征在于，
所述纯的保护气体流是氮气流。
7.一种用于实施根据权利要求1所述的方法的第二阶段的设备，所述设备具有：用于支承由所述衬底（6、7）构成的器件装置的载体台（1）；包围所述器件装置并且与所述载体台（1）的上侧共同形成壳体内腔的壳体（3），所述器件装置定位在所述壳体内腔中；以及激光光源（5），所述激光光源定向为，使得激光束从背侧射到所述第一衬底（6）上。
8.根据权利要求7所述的设备，
其特征在于，
所述壳体（3）相对于所述载体台（1）的所述上侧设有环形的密封件（2）。
9.根据权利要求7或8所述的设备，
其特征在于，
所述壳体（3）具有能够实现使所述壳体内腔被熔剂介质或吹扫介质穿流的入流口（8）和出流口（9）。
10.根据权利要求7至9之一所述的设备，
其特征在于，
所述壳体（3）的基本上平行于所述第一衬底（6）的背侧设置的壳体壁（4）构成为透明的板（4），以便能够实现用激光能（5）从背面加载所述第一衬底（6）。
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