JP2014500614A - 高周波用圧電性結晶複合体、装置、及びそれらの製造方法 - Google Patents
高周波用圧電性結晶複合体、装置、及びそれらの製造方法 Download PDFInfo
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- JP2014500614A JP2014500614A JP2013534959A JP2013534959A JP2014500614A JP 2014500614 A JP2014500614 A JP 2014500614A JP 2013534959 A JP2013534959 A JP 2013534959A JP 2013534959 A JP2013534959 A JP 2013534959A JP 2014500614 A JP2014500614 A JP 2014500614A
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Abstract
【選択図】図3
Description
本出願は、その開示内容が本出願に全体的に含まれる、2010年10月13日に出願された米国予備特許出願(No,61/344,801)に基づく優先権を主張するものであり、その全内容が本出願に包含される。
技術分野
本発明は、高周波(>20MHz)の下で作動する圧電結晶や圧電性結晶複合体の技術分野に関する。本発明は、特に、工業や医療における超音波応用分野に良好に用いられる高解像度の画像処理のための高周波用圧電性結晶複合体、及び、同材料を製造する方法に関する。
従来、PMN−PT系の圧電単結晶は、伝統的なPZT系セラミックと比較して優れた誘電率や圧電特性を有する。この単結晶の優れた特性を十分に活用するため、結晶複合体が製造され、電気機械的結合係数やトランデューサ性能特性の向上が図られている。
1.P.Han,W.Yan,J.Tian,X,Huang,H.Pan,“Cut directions for the optimization of piezoelectric coefficients of PMN−PT ferroelectric crystals”,Applied Physics Letters,volume86,Number5(2005).
2.S.Wang,et al.,“Deep Reactive Ion Etching of Lead Zirconate Titanate Using Sulfur hexafluoride Gas”,J.Am.Ceram.Soc.,82(5)1339−1341,1999.
2.A.M.Efremov,et al.,“Etching Mechanism of Pb(Zr,Ti)O3 Thin Films in Cl2/Ar Plasma”,Plasma Chemistry and Plasma Processing2(1),pp.13−29,Mar.2004.
4.S.Subasinghe,A.Goyal,S.Tadigadapa,“High aspect ratio plasma etching of bulk Lead Zirconate Titanate”,in Proc.SPIE−Int.Soc.Opt.Engr,edited by Mary−Ann Maher,Harold D.Stewart,and Jung−Chih Chiao(San Jose,CA,2006),pp.61090D1−9.
x*Pb(B’1/2B”1/2)O3−y*PbTiO3−(1−x−y)*Pb(Mg1/3Nb2/3)O3(I)
上記式において、
xは、0.00から0.50モル%であり、yは、0.00から0.50モル%であり、B’は、インジウム(In)、イッテルビウム(Yb)、スカンジウム(Sc)、鉄(Fe)のいずれかであり、B”は、ニオブ(Nb)又はタンタル(Ta)のいずれかである。式(I)における結晶組成は、全バッチ量で、5%(wt%)以下のマンガン(Mn)及び/又は10%(wt%)以下のセリウム(Ce)をさらに含んでもよい。
x*ABO3−y*PbTiO3−(1−x−y)*Pb(Mg1/3Nb2/3)O3 (II)
上記式において、
xは、0.00から0.50モル%であり、
yは、0.00から0.50モル%であり、
Aは、鉛(Pb)またはビスマス(Bi)であり、
Bは、インジウム(In)、イッテルビウム(Yb)、鉄(Fe)、ジルコニウム(Zr)、スカンジウム(Sc)、ニオブ(Nb)、タンタル(Ta)又はこれらの組合せからなる群から選択した1つである。式(II)における結晶組成は、全バッチ量で、5%(wt%)以下のマンガン(Mn)及び/又は10%(wt%)以下のセリウム(Ce)をさらに含んでもよい。
るようにしている。
るようにしている。
上記式(I)において、xは0.00から0.50モル%であり、yは0.00から0.50モル%であり、B’はインジウム(In)、イッテルビウム(Yb)、スカンジウム(Sc)または鉄(Fe)を表し、B”はニオブ(Nb)またはタンタル(Ta)を表す。式(I)における結晶組成は、全バッチ量で、5%(wt%)以下のマンガン(Mn)及び/又は10%(wt%)以下のセリウム(Ce)を添加物としてさらに含んでもよい。
上記式(II)において、xは0.00から0.50モル%であり、yは0.00から0.50モル%であり、Aは鉛(Pb)又はビスマス(Bi)またはバリウム(Ba)を表し、Bはインジウム(In)、イッテルビウム(Yb)、鉄(Fe)、ジルコニウム(Zr)スカンジウム(Sc)、ニオブ(Nb)、タンタル(Ta)または上記の元素の組み合わせを表す。式(II)における結晶組成は、全バッチ量で、5%(wt%)以下のマンガン(Mn)及び/又は10%(wt%)以下のセリウム(Ce)をさらに含んでもよい。
が用いられることによって、切り溝へのエポキシの充填がなされる場合には、切り溝内のエポキシによる横クランプ効果を完全に回避できることにある。
d’31=d31*Cos(θ)*Cos(θ)+d32*Sin(θ)*Sin(θ)
例では、少なくとも一つの切り溝にはいかなるクランプ効果も生じないことが保証される一方、故障方向は非直線であるため、圧電結晶複合体の信頼性が大幅に向上する。
ることを示す概略例示的配向図である。また、指定方向から30°に関する同じ解釈が、
の30°に適用される。
を示している。この構造によって、平行四辺形体の形態の結晶柱間の切り溝に充填されるエポキシによる横クランプ効果を最小限にすることができる。このハイブリッド1−3形態に基づき、複合体結晶は高い結合係数を有し、エポキシ切り溝には横歪みが生じない。ここで、「ハイブリッド」という用語が、M−N形態に使用されている。その理由は、はじめて平行四辺形体パターンで連続切り溝線が用いられ、切り溝線は各面に対して115°離れているためである。この配置によって、横クランプ効果を完全に無くすことができる。
±2.5°である。この非連続ハイブリッド2−2/1−3形態を採用することによって、クランプ方向(図示)は、結晶体の性能に負の影響を与えないことになる。図7A及び7Cに示す白い空間と図7Bに示す黒い空間はエポキシ又はポリマー材料を表し、バーは圧電材料を表すことを留意すべきである。横方向に伸延する歪みは、<011>方向に平行して負の値をとり、<011>方向に平行して正の値をとることに留意すべきである。
Claims (14)
- 以下の式で表される結晶組成を有する圧電PMN−PT系結晶複合体。
x*Pb(B’1/2B”1/2)O3−y*PbTiO3−(1−x−y)*Pb(Mg1/3Nb2/3)O3
上記式において、
xは、0.00から0.50モル%であり、
yは、0.00から0.50モル%であり、
B’は、インジウム(In)、イッテルビウム(Yb)、スカンジウム(Sc)、ジルコニウム(Zr)、鉄(Fe)のいずれかであり、
B”は、ニオブ(Nb)又はタンタル(Ta)のいずれかである。 - 前記結晶組成は、全バッチ量で、5%(wt%)以下のマンガン(Mn)と10%(wt%)以下のセリウム(Ce)とからなる群から選択した添加物を含むことを特徴とする請求項1記載の圧電結晶複合体。
- 前記結晶複合体の厚み電気機械的結合係数ktは約0.65〜0.90であることを特徴とする請求項1記載の圧電結晶複合体。
- 前記結晶複合体は、少なくとも20MHzの周波数で動作することを特徴とする請求項1記載の圧電結晶複合体。
- 前記結晶複合体は、少なくとも80MHzの周波数で動作することを特徴とする請求項1記載の圧電結晶複合体。
- 前記結晶複合体は、超音波撮像を行うために用いられる医療用撮像装置と組み合わせて用いられることを特徴とする請求項1記載の圧電結晶複合体。
- 前記結晶複合体は、(011)で切断され、<011>で分極反転され、以下の座標回転d31式に従って<011>方向から±32.5°(±2.5°)の方向のひずみをゼロにすることを特徴とする請求項1記載の圧電結晶複合体。
d’31=d31*Cos(θ)*Cos(θ)+d32*Sin(θ)*Sin(θ) - 以下の式で表され1つの無鉛成分を含む結晶組成を有する圧電PMN−PT系結晶複合体。
x*ABO3−y*PbTiO3−(1−x−y)*Pb(Mg1/3Nb2/3)O3
上記式において、
xは、0.00から0.50モル%であり、
yは、0.00から0.50モル%であり、
Aは、ビスマス(Bi)またはバリウム(Ba)であり、
Bは、インジウム(In)、イッテルビウム(Yb)、鉄(Fe)、ジルコニウム(Zr)、スカンジウム(Sc)、ニオブ(Nb)、タンタル(Ta)及びこれらの組合せからなる群から選択した1つである。 - 前記結晶組成は、全バッチ量で、5%(wt%)以下のマンガン(Mn)と10%(wt%)以下のセリウム(Ce)とからなる群から選択した添加物を含むことを特徴とする請求項8記載の圧電結晶複合体。
- 前記結晶複合体の厚み電気機械的結合係数ktは約0.65〜0.90であることを特徴とする請求項9記載の圧電結晶複合体。
- 前記結晶複合体は、少なくとも20MHzの周波数で動作することを特徴とする請求項8記載の圧電結晶複合体。
- 前記結晶複合体は、少なくとも80MHzの周波数で動作することを特徴とする請求項8記載の圧電結晶複合体。
- 前記結晶複合体は、超音波撮像を行うために用いられる医療用撮像装置と組み合わせて用いられることを特徴とする請求項8記載の圧電結晶複合体。
- 前記結晶複合体は、(011)で切断され、<011>で分極反転され、以下の座標回転d31式に従って<011>方向から±32.5°(±2.5°)の方向のひずみをゼロにすることを特徴とする請求項8記載の圧電結晶複合体。
d’31=d31*Cos(θ)*Cos(θ)+d32*Sin(θ)*Sin(θ)
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WO2012051465A2 (en) | 2012-04-19 |
JP2014501058A (ja) | 2014-01-16 |
US8559273B2 (en) | 2013-10-15 |
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US9525124B2 (en) | 2016-12-20 |
JP6354058B2 (ja) | 2018-08-22 |
US20170092839A1 (en) | 2017-03-30 |
WO2012051465A3 (en) | 2012-07-26 |
US10230040B2 (en) | 2019-03-12 |
US20130223185A1 (en) | 2013-08-29 |
CN103430341A (zh) | 2013-12-04 |
KR101323212B1 (ko) | 2013-10-30 |
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JP5599950B2 (ja) | 2014-10-01 |
JP6167264B2 (ja) | 2017-08-02 |
WO2012051464A3 (en) | 2012-07-26 |
CN103262274A (zh) | 2013-08-21 |
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US20150071029A1 (en) | 2015-03-12 |
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