JP2014232805A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2014232805A JP2014232805A JP2013113163A JP2013113163A JP2014232805A JP 2014232805 A JP2014232805 A JP 2014232805A JP 2013113163 A JP2013113163 A JP 2013113163A JP 2013113163 A JP2013113163 A JP 2013113163A JP 2014232805 A JP2014232805 A JP 2014232805A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000011084 recovery Methods 0.000 claims abstract description 29
- 229910052742 iron Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 11
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 27
- 239000000969 carrier Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- Power Engineering (AREA)
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
図1は、本発明の実施の形態に係る半導体装置の断面図である。この半導体装置は、例えばサファイア、SiC、Si、又はGaNで形成された基板10を備えている。基板10の上にバッファ層12が形成されている。バッファ層12はGaNに遷移金属元素であるFe又はCを添加して形成されている。Fe又はCの添加量は、1×1016cm−3以上1×1018cm−3以下である。バッファ層12の層厚は例えば1〜1.5μmである。
Claims (6)
- 基板と、
前記基板の上に、GaNにFe又はCを添加して形成されたバッファ層と、
前記バッファ層の上にGaNで形成された、電子が走行するチャネル層と、
前記チャネル層の上に形成された、前記チャネル層に2次元電子ガスを形成するための電子供給層と、
前記電子供給層の上に形成されたゲート電極と、
前記電子供給層の上に形成されたドレイン電極と、
前記電子供給層の上に形成されたソース電極と、を備え、
高周波出力を遮断してからt秒経過するまでのドレイン電流の変化量をΔIds(t)、高周波出力を遮断してから10秒経過するまでのドレイン電流の変化量をΔIds(10)として、ΔIds(t)がΔIds(10)の95%に達するときのtをリカバリ時間とすると、前記リカバリ時間は5秒以下であることを特徴とする半導体装置。 - 前記リカバリ時間が0.5秒以下であることを特徴とする請求項1に記載の半導体装置。
- 前記リカバリ時間がゼロであることを特徴とする請求項1に記載の半導体装置。
- 前記Fe又はCの添加量は1×1016cm−3以上1×1018cm−3以下であることを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。
- 前記チャネル層の層厚は0.5μm以上であり、
前記バッファ層の層厚は1〜1.5μmであることを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置。 - 前記バッファ層はp型の導電型となっていることを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。
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JP2013113163A JP6419418B2 (ja) | 2013-05-29 | 2013-05-29 | 半導体装置 |
US14/174,928 US9117742B2 (en) | 2013-05-29 | 2014-02-07 | High electron mobility transistor with shortened recovery time |
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JP2013113163A JP6419418B2 (ja) | 2013-05-29 | 2013-05-29 | 半導体装置 |
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JP2014232805A true JP2014232805A (ja) | 2014-12-11 |
JP6419418B2 JP6419418B2 (ja) | 2018-11-07 |
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JP2013113163A Active JP6419418B2 (ja) | 2013-05-29 | 2013-05-29 | 半導体装置 |
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JP (1) | JP6419418B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019021704A (ja) * | 2017-07-13 | 2019-02-07 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP2019532500A (ja) * | 2016-09-02 | 2019-11-07 | アイキューイー ピーエルシーIQE plc | Iii族窒化物構造の成長のための核生成層 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11201217B2 (en) | 2019-07-24 | 2021-12-14 | Coorstek Kk | Nitride semiconductor substrate |
CN117413345A (zh) * | 2021-06-08 | 2024-01-16 | 信越半导体株式会社 | 氮化物半导体基板及其制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008251966A (ja) * | 2007-03-30 | 2008-10-16 | Fujitsu Ltd | 半導体エピタキシャル基板、化合物半導体装置、およびそれらの製造方法 |
JP2008288474A (ja) * | 2007-05-21 | 2008-11-27 | Sharp Corp | ヘテロ接合電界効果トランジスタ |
JP2011199222A (ja) * | 2010-03-24 | 2011-10-06 | Hitachi Cable Ltd | 窒化物半導体エピタキシャルウェハおよびその製造方法ならびに電界効果型トランジスタ素子 |
JP2012033646A (ja) * | 2010-07-29 | 2012-02-16 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP2013074211A (ja) * | 2011-09-28 | 2013-04-22 | Fujitsu Ltd | 半導体装置 |
Family Cites Families (8)
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JP4592938B2 (ja) | 1999-12-08 | 2010-12-08 | パナソニック株式会社 | 半導体装置 |
US6639255B2 (en) | 1999-12-08 | 2003-10-28 | Matsushita Electric Industrial Co., Ltd. | GaN-based HFET having a surface-leakage reducing cap layer |
JP4514584B2 (ja) * | 2004-11-16 | 2010-07-28 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP4584293B2 (ja) | 2007-08-31 | 2010-11-17 | 富士通株式会社 | 窒化物半導体装置、ドハティ増幅器、ドレイン電圧制御増幅器 |
JP5578873B2 (ja) | 2010-02-08 | 2014-08-27 | 古河電気工業株式会社 | 窒化ガリウム半導体装置及びその製造方法 |
JP5343910B2 (ja) | 2010-04-09 | 2013-11-13 | 富士通株式会社 | 化合物半導体装置の製造方法 |
JP5711001B2 (ja) | 2011-02-17 | 2015-04-30 | 新日本無線株式会社 | 窒化物半導体装置の製造方法 |
JP2014027253A (ja) * | 2012-06-22 | 2014-02-06 | Toshiba Corp | 整流回路 |
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- 2013-05-29 JP JP2013113163A patent/JP6419418B2/ja active Active
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- 2014-02-07 US US14/174,928 patent/US9117742B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008251966A (ja) * | 2007-03-30 | 2008-10-16 | Fujitsu Ltd | 半導体エピタキシャル基板、化合物半導体装置、およびそれらの製造方法 |
JP2008288474A (ja) * | 2007-05-21 | 2008-11-27 | Sharp Corp | ヘテロ接合電界効果トランジスタ |
JP2011199222A (ja) * | 2010-03-24 | 2011-10-06 | Hitachi Cable Ltd | 窒化物半導体エピタキシャルウェハおよびその製造方法ならびに電界効果型トランジスタ素子 |
JP2012033646A (ja) * | 2010-07-29 | 2012-02-16 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP2013074211A (ja) * | 2011-09-28 | 2013-04-22 | Fujitsu Ltd | 半導体装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019532500A (ja) * | 2016-09-02 | 2019-11-07 | アイキューイー ピーエルシーIQE plc | Iii族窒化物構造の成長のための核生成層 |
JP7137557B2 (ja) | 2016-09-02 | 2022-09-14 | アイキューイー ピーエルシー | Iii族窒化物構造の成長のための核生成層 |
JP2019021704A (ja) * | 2017-07-13 | 2019-02-07 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US10992269B2 (en) | 2017-07-13 | 2021-04-27 | Fujitsu Limited | Compound semiconductor device with high power and reduced off-leakage and method for manufacturing the same |
JP6993562B2 (ja) | 2017-07-13 | 2022-02-03 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
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US20140353674A1 (en) | 2014-12-04 |
US9117742B2 (en) | 2015-08-25 |
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