JP2014229814A5 - - Google Patents
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- Publication number
- JP2014229814A5 JP2014229814A5 JP2013109773A JP2013109773A JP2014229814A5 JP 2014229814 A5 JP2014229814 A5 JP 2014229814A5 JP 2013109773 A JP2013109773 A JP 2013109773A JP 2013109773 A JP2013109773 A JP 2013109773A JP 2014229814 A5 JP2014229814 A5 JP 2014229814A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- semiconductor layer
- barrier film
- barrier
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 claims description 33
- 239000010410 layer Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 24
- 239000010409 thin film Substances 0.000 claims 11
- 230000001603 reducing effect Effects 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 238000005401 electroluminescence Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013109773A JP2014229814A (ja) | 2013-05-24 | 2013-05-24 | 薄膜トランジスタ、表示装置および電子機器 |
| US14/273,847 US9053984B2 (en) | 2013-05-24 | 2014-05-09 | Thin-film transistor, display unit, and electronic apparatus |
| CN201410209127.4A CN104183647B (zh) | 2013-05-24 | 2014-05-16 | 薄膜晶体管、显示单元、以及电子设备 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013109773A JP2014229814A (ja) | 2013-05-24 | 2013-05-24 | 薄膜トランジスタ、表示装置および電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014229814A JP2014229814A (ja) | 2014-12-08 |
| JP2014229814A5 true JP2014229814A5 (enExample) | 2015-08-06 |
Family
ID=51934793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013109773A Pending JP2014229814A (ja) | 2013-05-24 | 2013-05-24 | 薄膜トランジスタ、表示装置および電子機器 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9053984B2 (enExample) |
| JP (1) | JP2014229814A (enExample) |
| CN (1) | CN104183647B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934437B (zh) | 2014-03-17 | 2019-12-13 | 松下电器产业株式会社 | 薄膜晶体管元件基板及其制造方法、和有机el显示装置 |
| US9812587B2 (en) * | 2015-01-26 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9745645B2 (en) | 2015-02-26 | 2017-08-29 | King Fahd University Of Petroleum And Minerals | Method of preparing silver nanoparticles and silver nanorings |
| CN106920754A (zh) * | 2017-02-17 | 2017-07-04 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管及其制备方法 |
| CN106935659B (zh) | 2017-05-11 | 2021-01-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、阵列基板以及显示装置 |
| US10593693B2 (en) | 2017-06-16 | 2020-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP7183184B2 (ja) * | 2017-12-22 | 2022-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN112289813B (zh) * | 2020-10-29 | 2022-10-14 | 湖北长江新型显示产业创新中心有限公司 | 阵列基板、显示面板及显示装置 |
| CN113097289A (zh) * | 2021-03-30 | 2021-07-09 | 合肥维信诺科技有限公司 | 薄膜晶体管及其制备方法、阵列基板 |
| CN114678426A (zh) * | 2022-03-10 | 2022-06-28 | 绵阳惠科光电科技有限公司 | 薄膜晶体管和显示装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8059109B2 (en) * | 2005-05-20 | 2011-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus |
| JPWO2009075281A1 (ja) * | 2007-12-13 | 2011-04-28 | 出光興産株式会社 | 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法 |
| JP5704790B2 (ja) * | 2008-05-07 | 2015-04-22 | キヤノン株式会社 | 薄膜トランジスタ、および、表示装置 |
| KR101056250B1 (ko) * | 2009-10-21 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 평판 표시 장치 및 그의 제조 방법 |
| JP2012015436A (ja) * | 2010-07-05 | 2012-01-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
| JP5917035B2 (ja) * | 2010-07-26 | 2016-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2012160679A (ja) * | 2011-02-03 | 2012-08-23 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
| JP5636304B2 (ja) | 2011-02-08 | 2014-12-03 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ回路基板及びその製造方法 |
| US9093541B2 (en) * | 2011-03-01 | 2015-07-28 | Sharp Kabushiki Kaisha | Thin film transistor and display device |
-
2013
- 2013-05-24 JP JP2013109773A patent/JP2014229814A/ja active Pending
-
2014
- 2014-05-09 US US14/273,847 patent/US9053984B2/en active Active
- 2014-05-16 CN CN201410209127.4A patent/CN104183647B/zh active Active
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