JP2014229814A - 薄膜トランジスタ、表示装置および電子機器 - Google Patents

薄膜トランジスタ、表示装置および電子機器 Download PDF

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Publication number
JP2014229814A
JP2014229814A JP2013109773A JP2013109773A JP2014229814A JP 2014229814 A JP2014229814 A JP 2014229814A JP 2013109773 A JP2013109773 A JP 2013109773A JP 2013109773 A JP2013109773 A JP 2013109773A JP 2014229814 A JP2014229814 A JP 2014229814A
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Japan
Prior art keywords
oxide semiconductor
semiconductor layer
barrier film
barrier
film
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Pending
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JP2013109773A
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English (en)
Japanese (ja)
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JP2014229814A5 (enExample
Inventor
加藤　祐一
Yuichi Kato
祐一 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2013109773A priority Critical patent/JP2014229814A/ja
Priority to US14/273,847 priority patent/US9053984B2/en
Priority to CN201410209127.4A priority patent/CN104183647B/zh
Publication of JP2014229814A publication Critical patent/JP2014229814A/ja
Publication of JP2014229814A5 publication Critical patent/JP2014229814A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2013109773A 2013-05-24 2013-05-24 薄膜トランジスタ、表示装置および電子機器 Pending JP2014229814A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013109773A JP2014229814A (ja) 2013-05-24 2013-05-24 薄膜トランジスタ、表示装置および電子機器
US14/273,847 US9053984B2 (en) 2013-05-24 2014-05-09 Thin-film transistor, display unit, and electronic apparatus
CN201410209127.4A CN104183647B (zh) 2013-05-24 2014-05-16 薄膜晶体管、显示单元、以及电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013109773A JP2014229814A (ja) 2013-05-24 2013-05-24 薄膜トランジスタ、表示装置および電子機器

Publications (2)

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JP2014229814A true JP2014229814A (ja) 2014-12-08
JP2014229814A5 JP2014229814A5 (enExample) 2015-08-06

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JP2013109773A Pending JP2014229814A (ja) 2013-05-24 2013-05-24 薄膜トランジスタ、表示装置および電子機器

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US (1) US9053984B2 (enExample)
JP (1) JP2014229814A (enExample)
CN (1) CN104183647B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019012822A (ja) * 2017-06-16 2019-01-24 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP2021073716A (ja) * 2015-01-26 2021-05-13 株式会社半導体エネルギー研究所 半導体装置
JP2023178328A (ja) * 2017-12-22 2023-12-14 株式会社半導体エネルギー研究所 トランジスタ

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111081734B (zh) * 2014-03-17 2025-10-03 三星显示有限公司 薄膜晶体管元件基板及其制造方法、和有机el显示装置
US9745645B2 (en) 2015-02-26 2017-08-29 King Fahd University Of Petroleum And Minerals Method of preparing silver nanoparticles and silver nanorings
CN106920754A (zh) * 2017-02-17 2017-07-04 深圳市华星光电技术有限公司 一种薄膜晶体管及其制备方法
CN106935659B (zh) 2017-05-11 2021-01-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、阵列基板以及显示装置
CN112289813B (zh) * 2020-10-29 2022-10-14 湖北长江新型显示产业创新中心有限公司 阵列基板、显示面板及显示装置
CN113097289A (zh) * 2021-03-30 2021-07-09 合肥维信诺科技有限公司 薄膜晶体管及其制备方法、阵列基板
CN114678426A (zh) * 2022-03-10 2022-06-28 绵阳惠科光电科技有限公司 薄膜晶体管和显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009075281A1 (ja) * 2007-12-13 2009-06-18 Idemitsu Kosan Co., Ltd. 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法
JP2009272427A (ja) * 2008-05-07 2009-11-19 Canon Inc 薄膜トランジスタ及びその製造方法
JP2012049513A (ja) * 2010-07-26 2012-03-08 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2012160679A (ja) * 2011-02-03 2012-08-23 Sony Corp 薄膜トランジスタ、表示装置および電子機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8059109B2 (en) * 2005-05-20 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus
KR101056250B1 (ko) * 2009-10-21 2011-08-11 삼성모바일디스플레이주식회사 평판 표시 장치 및 그의 제조 방법
JP2012015436A (ja) * 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置
JP5636304B2 (ja) 2011-02-08 2014-12-03 株式会社ジャパンディスプレイ 薄膜トランジスタ回路基板及びその製造方法
JP5404963B2 (ja) * 2011-03-01 2014-02-05 シャープ株式会社 薄膜トランジスタおよび表示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009075281A1 (ja) * 2007-12-13 2009-06-18 Idemitsu Kosan Co., Ltd. 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法
JP2009272427A (ja) * 2008-05-07 2009-11-19 Canon Inc 薄膜トランジスタ及びその製造方法
JP2012049513A (ja) * 2010-07-26 2012-03-08 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2012160679A (ja) * 2011-02-03 2012-08-23 Sony Corp 薄膜トランジスタ、表示装置および電子機器

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021073716A (ja) * 2015-01-26 2021-05-13 株式会社半導体エネルギー研究所 半導体装置
JP7112539B2 (ja) 2015-01-26 2022-08-03 株式会社半導体エネルギー研究所 半導体装置
JP2019012822A (ja) * 2017-06-16 2019-01-24 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7094786B2 (ja) 2017-06-16 2022-07-04 株式会社半導体エネルギー研究所 半導体装置
US11626422B2 (en) 2017-06-16 2023-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US11943929B2 (en) 2017-06-16 2024-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2023178328A (ja) * 2017-12-22 2023-12-14 株式会社半導体エネルギー研究所 トランジスタ

Also Published As

Publication number Publication date
CN104183647B (zh) 2018-06-08
CN104183647A (zh) 2014-12-03
US9053984B2 (en) 2015-06-09
US20140346499A1 (en) 2014-11-27

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