CN104183647B - 薄膜晶体管、显示单元、以及电子设备 - Google Patents

薄膜晶体管、显示单元、以及电子设备 Download PDF

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Publication number
CN104183647B
CN104183647B CN201410209127.4A CN201410209127A CN104183647B CN 104183647 B CN104183647 B CN 104183647B CN 201410209127 A CN201410209127 A CN 201410209127A CN 104183647 B CN104183647 B CN 104183647B
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China
Prior art keywords
isolation film
semiconductor layer
oxide semiconductor
film
tft
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CN201410209127.4A
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English (en)
Chinese (zh)
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CN104183647A (zh
Inventor
加藤祐
加藤祐一
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Magno Bolan Co ltd
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Joled Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN201410209127.4A 2013-05-24 2014-05-16 薄膜晶体管、显示单元、以及电子设备 Active CN104183647B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-109773 2013-05-24
JP2013109773A JP2014229814A (ja) 2013-05-24 2013-05-24 薄膜トランジスタ、表示装置および電子機器

Publications (2)

Publication Number Publication Date
CN104183647A CN104183647A (zh) 2014-12-03
CN104183647B true CN104183647B (zh) 2018-06-08

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US (1) US9053984B2 (enExample)
JP (1) JP2014229814A (enExample)
CN (1) CN104183647B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111081734B (zh) * 2014-03-17 2025-10-03 三星显示有限公司 薄膜晶体管元件基板及其制造方法、和有机el显示装置
US9812587B2 (en) * 2015-01-26 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9745645B2 (en) 2015-02-26 2017-08-29 King Fahd University Of Petroleum And Minerals Method of preparing silver nanoparticles and silver nanorings
CN106920754A (zh) * 2017-02-17 2017-07-04 深圳市华星光电技术有限公司 一种薄膜晶体管及其制备方法
CN106935659B (zh) 2017-05-11 2021-01-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、阵列基板以及显示装置
US10593693B2 (en) 2017-06-16 2020-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2019123109A1 (ja) * 2017-12-22 2019-06-27 株式会社半導体エネルギー研究所 半導体装置
CN112289813B (zh) * 2020-10-29 2022-10-14 湖北长江新型显示产业创新中心有限公司 阵列基板、显示面板及显示装置
CN113097289A (zh) * 2021-03-30 2021-07-09 合肥维信诺科技有限公司 薄膜晶体管及其制备方法、阵列基板
CN114678426A (zh) * 2022-03-10 2022-06-28 绵阳惠科光电科技有限公司 薄膜晶体管和显示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1873748A (zh) * 2005-05-20 2006-12-06 株式会社半导体能源研究所 显示装置和电子设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258857B (zh) * 2007-12-13 2016-05-11 出光兴产株式会社 使用了氧化物半导体的场效应晶体管及其制造方法
JP5704790B2 (ja) * 2008-05-07 2015-04-22 キヤノン株式会社 薄膜トランジスタ、および、表示装置
KR101056250B1 (ko) * 2009-10-21 2011-08-11 삼성모바일디스플레이주식회사 평판 표시 장치 및 그의 제조 방법
JP2012015436A (ja) * 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置
JP5917035B2 (ja) * 2010-07-26 2016-05-11 株式会社半導体エネルギー研究所 半導体装置
JP2012160679A (ja) * 2011-02-03 2012-08-23 Sony Corp 薄膜トランジスタ、表示装置および電子機器
JP5636304B2 (ja) 2011-02-08 2014-12-03 株式会社ジャパンディスプレイ 薄膜トランジスタ回路基板及びその製造方法
JP5404963B2 (ja) * 2011-03-01 2014-02-05 シャープ株式会社 薄膜トランジスタおよび表示装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1873748A (zh) * 2005-05-20 2006-12-06 株式会社半导体能源研究所 显示装置和电子设备

Also Published As

Publication number Publication date
CN104183647A (zh) 2014-12-03
US9053984B2 (en) 2015-06-09
JP2014229814A (ja) 2014-12-08
US20140346499A1 (en) 2014-11-27

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Effective date: 20150717

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Effective date of registration: 20231128

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Patentee after: Japan Display Design and Development Contract Society

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Patentee before: JOLED Inc.

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Effective date of registration: 20250730

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Patentee after: Magno Bolan Co.,Ltd.

Country or region after: Japan

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Patentee before: Japan Display Design and Development Contract Society

Country or region before: Japan