JP2014225317A - マイクロアクチュエータおよびディスクドライブ - Google Patents
マイクロアクチュエータおよびディスクドライブ Download PDFInfo
- Publication number
- JP2014225317A JP2014225317A JP2014095193A JP2014095193A JP2014225317A JP 2014225317 A JP2014225317 A JP 2014225317A JP 2014095193 A JP2014095193 A JP 2014095193A JP 2014095193 A JP2014095193 A JP 2014095193A JP 2014225317 A JP2014225317 A JP 2014225317A
- Authority
- JP
- Japan
- Prior art keywords
- microactuator
- layer
- adhesive layer
- electrode
- passivation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002161 passivation Methods 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 113
- 239000012790 adhesive layer Substances 0.000 claims description 98
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 9
- 239000010948 rhodium Substances 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052703 rhodium Inorganic materials 0.000 claims description 7
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000000725 suspension Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 25
- 239000000463 material Substances 0.000 description 22
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- 230000008569 process Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000013500 data storage Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 230000036316 preload Effects 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- REHONNLQRWTIFF-UHFFFAOYSA-N 3,3',4,4',5-pentachlorobiphenyl Chemical compound C1=C(Cl)C(Cl)=CC=C1C1=CC(Cl)=C(Cl)C(Cl)=C1 REHONNLQRWTIFF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/4806—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed specially adapted for disk drive assemblies, e.g. assembly prior to operation, hard or flexible disk drives
- G11B5/4873—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed specially adapted for disk drive assemblies, e.g. assembly prior to operation, hard or flexible disk drives the arm comprising piezoelectric or other actuators for adjustment of the arm
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/4806—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed specially adapted for disk drive assemblies, e.g. assembly prior to operation, hard or flexible disk drives
- G11B5/4826—Mounting, aligning or attachment of the transducer head relative to the arm assembly, e.g. slider holding members, gimbals, adhesive
- G11B5/483—Piezoelectric devices between head and arm, e.g. for fine adjustment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/081—Shaping or machining of piezoelectric or electrostrictive bodies by coating or depositing using masks, e.g. lift-off
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
- H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
- Y10S977/837—Piezoelectric property of nanomaterial
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Supporting Of Heads In Record-Carrier Devices (AREA)
- Micromachines (AREA)
- Moving Of The Head To Find And Align With The Track (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/886,780 US8854772B1 (en) | 2013-05-03 | 2013-05-03 | Adhesion enhancement of thin film PZT structure |
| US13/886,780 | 2013-05-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014225317A true JP2014225317A (ja) | 2014-12-04 |
| JP2014225317A5 JP2014225317A5 (enExample) | 2015-04-23 |
Family
ID=50630658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014095193A Pending JP2014225317A (ja) | 2013-05-03 | 2014-05-02 | マイクロアクチュエータおよびディスクドライブ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8854772B1 (enExample) |
| EP (1) | EP2800095A1 (enExample) |
| JP (1) | JP2014225317A (enExample) |
| KR (1) | KR101552279B1 (enExample) |
| CN (1) | CN104218146A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2022118575A1 (enExample) * | 2020-12-01 | 2022-06-09 | ||
| US12501221B2 (en) | 2020-12-01 | 2025-12-16 | Rohm Co., Ltd. | Transducer |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9786308B1 (en) | 2016-06-07 | 2017-10-10 | Seagate Technology Llc | Interconnect interposer attachable to a trailing edge of a slider |
| CN112201280B (zh) * | 2019-07-08 | 2024-07-09 | 马格内康普公司 | 用于谐振改善的多层执行器电极构型 |
| US11152024B1 (en) | 2020-03-30 | 2021-10-19 | Western Digital Technologies, Inc. | Piezoelectric-based microactuator arrangement for mitigating out-of-plane force and phase variation of flexure vibration |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1027446A (ja) * | 1996-07-08 | 1998-01-27 | Nec Corp | キャリッジ機構及び該キャリッジ機構を備えた磁気ディスク装置 |
| JP2002219804A (ja) * | 2001-01-26 | 2002-08-06 | Seiko Epson Corp | インクジェット式記録ヘッド |
| JP2008173924A (ja) * | 2007-01-22 | 2008-07-31 | Fuji Xerox Co Ltd | 液滴吐出ヘッド |
| JP2010103194A (ja) * | 2008-10-21 | 2010-05-06 | Tdk Corp | 薄膜圧電体素子及びその製造方法並びにそれを用いたヘッドジンバルアセンブリ、及びそのヘッドジンバルアセンブリを用いたハードディスクドライブ |
| JP2011066321A (ja) * | 2009-09-18 | 2011-03-31 | Tdk Corp | 薄膜素子の製造方法及び薄膜素子並びにその薄膜素子を用いたヘッドジンバルアセンブリ、及び、ハードディスクドライブ |
| JP2012178195A (ja) * | 2011-02-25 | 2012-09-13 | Tdk Corp | 圧電素子及びその製造方法並びにその圧電素子を搭載したヘッドジンバルアセンブリ |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2324882B (en) | 1997-04-29 | 2001-05-23 | Daewoo Electronics Co Ltd | Array of thin film actuated mirrors and method for the manufacture thereof |
| JP4501170B2 (ja) * | 1999-03-18 | 2010-07-14 | ソニー株式会社 | 半導体装置およびその製造方法 |
| US7383727B2 (en) * | 1999-05-20 | 2008-06-10 | Seiko Epson Corporation | Liquid cotainer having a liquid consumption detecting device therein |
| CA2438360C (en) * | 2001-12-18 | 2010-02-09 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, manufacturing method thereof, and ink jet printing apparatus |
| JP4146811B2 (ja) * | 2004-03-03 | 2008-09-10 | Ｔｄｋ株式会社 | サスペンション、及びハードディスク装置 |
| JP2007200534A (ja) * | 2006-01-26 | 2007-08-09 | Shinka Jitsugyo Kk | 高密度磁気記録用スライダ |
| WO2007093921A2 (en) * | 2006-02-14 | 2007-08-23 | Delphi Technologies, Inc. | Barrier coatings for a piezoelectric device |
| GB0602955D0 (en) * | 2006-02-14 | 2006-03-29 | Delphi Tech Inc | Piezoelectric actuator |
| JP5844026B2 (ja) * | 2008-03-21 | 2016-01-13 | 富士フイルム株式会社 | 圧電素子の製造方法 |
| JP5541450B2 (ja) * | 2010-03-16 | 2014-07-09 | セイコーエプソン株式会社 | 圧電素子の製造方法 |
| US8422172B1 (en) * | 2010-10-01 | 2013-04-16 | Western Digital Technologies, Inc. | Actuator trace through a die |
| US8289652B2 (en) | 2010-10-22 | 2012-10-16 | Seagate Technology Llc | Compact microactuator head assembly |
| JP2012174955A (ja) * | 2011-02-23 | 2012-09-10 | Stanley Electric Co Ltd | 圧電アクチュエータ及びその製造方法 |
| JP5360129B2 (ja) * | 2011-05-11 | 2013-12-04 | Ｔｄｋ株式会社 | ヘッド支持機構 |
| US8310790B1 (en) * | 2011-06-11 | 2012-11-13 | Nhk Spring Co., Ltd | Remote drive rotary head dual stage actuator |
| US8716858B2 (en) | 2011-06-24 | 2014-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump structure with barrier layer on post-passivation interconnect |
| US9553195B2 (en) | 2011-06-30 | 2017-01-24 | Applied Materials, Inc. | Method of IGZO and ZNO TFT fabrication with PECVD SiO2 passivation |
-
2013
- 2013-05-03 US US13/886,780 patent/US8854772B1/en active Active
-
2014
- 2014-05-01 EP EP14166801.2A patent/EP2800095A1/en not_active Withdrawn
- 2014-05-02 JP JP2014095193A patent/JP2014225317A/ja active Pending
- 2014-05-04 CN CN201410354090.4A patent/CN104218146A/zh active Pending
- 2014-05-07 KR KR1020140054371A patent/KR101552279B1/ko not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1027446A (ja) * | 1996-07-08 | 1998-01-27 | Nec Corp | キャリッジ機構及び該キャリッジ機構を備えた磁気ディスク装置 |
| JP2002219804A (ja) * | 2001-01-26 | 2002-08-06 | Seiko Epson Corp | インクジェット式記録ヘッド |
| JP2008173924A (ja) * | 2007-01-22 | 2008-07-31 | Fuji Xerox Co Ltd | 液滴吐出ヘッド |
| JP2010103194A (ja) * | 2008-10-21 | 2010-05-06 | Tdk Corp | 薄膜圧電体素子及びその製造方法並びにそれを用いたヘッドジンバルアセンブリ、及びそのヘッドジンバルアセンブリを用いたハードディスクドライブ |
| JP2011066321A (ja) * | 2009-09-18 | 2011-03-31 | Tdk Corp | 薄膜素子の製造方法及び薄膜素子並びにその薄膜素子を用いたヘッドジンバルアセンブリ、及び、ハードディスクドライブ |
| JP2012178195A (ja) * | 2011-02-25 | 2012-09-13 | Tdk Corp | 圧電素子及びその製造方法並びにその圧電素子を搭載したヘッドジンバルアセンブリ |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2022118575A1 (enExample) * | 2020-12-01 | 2022-06-09 | ||
| US12501221B2 (en) | 2020-12-01 | 2025-12-16 | Rohm Co., Ltd. | Transducer |
Also Published As
| Publication number | Publication date |
|---|---|
| US8854772B1 (en) | 2014-10-07 |
| KR101552279B1 (ko) | 2015-09-10 |
| EP2800095A1 (en) | 2014-11-05 |
| CN104218146A (zh) | 2014-12-17 |
| KR20140131289A (ko) | 2014-11-12 |
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