JP2014183195A5 - - Google Patents

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Publication number
JP2014183195A5
JP2014183195A5 JP2013056803A JP2013056803A JP2014183195A5 JP 2014183195 A5 JP2014183195 A5 JP 2014183195A5 JP 2013056803 A JP2013056803 A JP 2013056803A JP 2013056803 A JP2013056803 A JP 2013056803A JP 2014183195 A5 JP2014183195 A5 JP 2014183195A5
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JP
Japan
Prior art keywords
semiconductor layer
semiconductor
substrate
insulating film
groove
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JP2013056803A
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English (en)
Japanese (ja)
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JP6091273B2 (ja
JP2014183195A (ja
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Publication of JP2014183195A5 publication Critical patent/JP2014183195A5/ja
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JP2013056803A 2013-03-19 2013-03-19 半導体装置とその製造方法 Expired - Fee Related JP6091273B2 (ja)

Priority Applications (1)

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JP2013056803A JP6091273B2 (ja) 2013-03-19 2013-03-19 半導体装置とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013056803A JP6091273B2 (ja) 2013-03-19 2013-03-19 半導体装置とその製造方法

Publications (3)

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JP2014183195A JP2014183195A (ja) 2014-09-29
JP2014183195A5 true JP2014183195A5 (enrdf_load_stackoverflow) 2016-03-31
JP6091273B2 JP6091273B2 (ja) 2017-03-08

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JP2013056803A Expired - Fee Related JP6091273B2 (ja) 2013-03-19 2013-03-19 半導体装置とその製造方法

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JP (1) JP6091273B2 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6514904B2 (ja) * 2015-02-05 2019-05-15 富士通株式会社 光半導体素子
JP6184539B2 (ja) * 2016-02-18 2017-08-23 沖電気工業株式会社 半導体受光素子、光電融合モジュール、半導体受光素子の製造方法
JP2018049856A (ja) * 2016-09-20 2018-03-29 ルネサスエレクトロニクス株式会社 半導体装置
JP2019117855A (ja) 2017-12-27 2019-07-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11393939B2 (en) * 2019-09-20 2022-07-19 Taiwan Semiconductor Manufacturing Company Ltd. Photo sensing device and method of fabricating the photo sensing device
US11404590B2 (en) * 2019-09-20 2022-08-02 Taiwan Semiconductor Manufacturing Company Ltd. Photo sensing device and method of fabricating the photo sensing device
US11393940B2 (en) 2019-09-20 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Photodetector and method for forming the same
US20230037960A1 (en) * 2020-01-15 2023-02-09 Tokyo Electron Limited Film forming method, film forming device, and method for manufacturing semiconductor device
JP7668093B2 (ja) * 2020-01-15 2025-04-24 東京エレクトロン株式会社 成膜方法、成膜装置、および半導体装置の製造方法
JP7639592B2 (ja) * 2021-07-19 2025-03-05 富士通オプティカルコンポーネンツ株式会社 半導体受光器、受信機及び光集積素子
JP7679743B6 (ja) * 2021-09-16 2025-06-19 古河ファイテルオプティカルコンポーネンツ株式会社 光検出器、及び光集積素子
JP7468791B1 (ja) * 2022-12-01 2024-04-16 三菱電機株式会社 導波路型受光素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107768A (ja) * 1975-02-17 1976-09-24 Siemens Ag Heimendonotakaishirikonkubominoseizohoho
JPS57180147A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Semiconductor device
EP0227523A3 (en) * 1985-12-19 1989-05-31 SILICONIX Incorporated Method for obtaining regions of dielectrically isolated single crystal silicon
JP2988353B2 (ja) * 1995-03-13 1999-12-13 日本電気株式会社 光検出用の半導体装置及びその製造方法
CN101836295A (zh) * 2007-08-08 2010-09-15 新加坡科技研究局 半导体装置及其制备方法

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