JP2014150160A - プラズマ処理装置および試料台 - Google Patents
プラズマ処理装置および試料台 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
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- H—ELECTRICITY
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- H01J2237/32—Processing objects by plasma generation
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- H01J2237/334—Etching
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Abstract
【解決手段】真空容器内部の処理室内に配置された試料台上にウエハを載置して前記処理室内に形成したプラズマを用いて前記ウエハを処理するプラズマ処理装置であって、前記試料台の内部に径方向と周方向に分けられた各々複数の領域に対応したヒータ部分を有し、少なくとも径方向外周側の領域のヒータは直列に接続され各々で発熱量調節された複数の周方向部分を備えた。
【選択図】図3
Description
101…真空容器
102…真空排気装置
103…処理室
104…電波源
105…導波管
106…拡大導波管部
107…試料台
108…バイアス電源
109…ヒータ用直流電源
110…静電吸着用直流電源
111…温調器
112…コントローラ
113…磁場発生コイル
114…誘電体窓
115…シャワープレート
116…ウエハ
117…マッチング回路
118…フィルター
201…静電吸着用電極
202…内側ヒータ
203…中間ヒータ
204…外側ヒータ
205…内側ヒータケーブル
206…中間ヒータケーブル
207…外側ヒータケーブル
208…電流制御素子
209…電流制御素子ケーブル
210…基材
211…誘電体膜
301…制御装置
Claims (5)
- 真空容器内部の処理室内に配置された試料台上にウエハを載置して前記処理室内に形成したプラズマを用いて前記ウエハを処理するプラズマ処理装置であって、
円筒形上を有する前記試料台の内部に配置されその中心から外周側へ向かう径方向および前記中心周りの周方向について分けられた複数の領域内に配置された複数のヒータと、これらの複数のヒータの発熱量を調節する制御部とを備え、 前記中心から同じ半径上の前記周方向の複数の領域内に配置された複数のヒータが直流電源に対して直列に配置されて回路を構成し前記制御部により各々の発熱量が調節されるプラズマ処理装置。 - 請求項1のプラズマ処理装置であって、
前記直列に配置された複数のヒータの各々が並列に接続されて前記回路を構成し各々のヒータに流れる電流の量を調節する調節器を備えたプラズマ処理装置。 - 請求項1または2に記載のプラズマ処理装置であって、
前記調節器は前記試料台の内部またはその直下方に配置され、前記回路を構成して前記ヒータの各々および前記調節器と前記直流電源との間であって前記真空容器の外部に配置されフィルターをを備えたプラズマ処理装置。 - 請求項3に記載のプラズマ処理装置であって、
前記試料台内部に配置された導体製の電極とこの電極に高周波電力を供給して前記ウエハの上方にバイアス電位を形成する高周波電源とを備え、
前記調節器の前記高周波電力に対するインピーダンスが前記回路の前記ヒータと前記直流電源との間のインピーダンスより著しく小さいプラズマ処理装置。 - 請求項1乃至4の何れかに記載のプラズマ処理装置であって、
前記径方向について分けられた複数の領域に配置された前記複数のヒータ各々が各々に対応した直流電源と電気的に接続され供給される電力が前記制御部により調節されるプラズマ処理装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2013018017A JP6276919B2 (ja) | 2013-02-01 | 2013-02-01 | プラズマ処理装置および試料台 |
CN201310057014.2A CN103972130B (zh) | 2013-02-01 | 2013-02-22 | 等离子处理装置以及试料台 |
CN201810597169.8A CN108511313B (zh) | 2013-02-01 | 2013-02-22 | 等离子处理装置以及试料台 |
KR20130020147A KR101486433B1 (ko) | 2013-02-01 | 2013-02-25 | 플라즈마 처리 장치 및 시료대 |
US13/798,270 US20140216657A1 (en) | 2013-02-01 | 2013-03-13 | Plasma processing apparatus and sample stage thereof |
US15/016,438 US10141165B2 (en) | 2013-02-01 | 2016-02-05 | Plasma processing apparatus and sample stage thereof |
US16/169,085 US10796890B2 (en) | 2013-02-01 | 2018-10-24 | Plasma processing apparatus and sample stage thereof |
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JP2013018017A JP6276919B2 (ja) | 2013-02-01 | 2013-02-01 | プラズマ処理装置および試料台 |
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JP2018002310A Division JP6483296B2 (ja) | 2018-01-11 | 2018-01-11 | プラズマ処理方法 |
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US (3) | US20140216657A1 (ja) |
JP (1) | JP6276919B2 (ja) |
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Cited By (6)
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JP2015142050A (ja) * | 2014-01-29 | 2015-08-03 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
KR20170007130A (ko) | 2015-07-09 | 2017-01-18 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라스마 처리 장치 |
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CN107910280A (zh) * | 2017-11-20 | 2018-04-13 | 上海华力微电子有限公司 | 一种建立全局调节模型进行优化快速热退火的方法 |
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JP6688763B2 (ja) * | 2017-05-30 | 2020-04-28 | 東京エレクトロン株式会社 | プラズマ処理方法 |
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KR20200033912A (ko) * | 2017-09-15 | 2020-03-30 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치 |
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JP6935598B1 (ja) * | 2019-12-20 | 2021-09-15 | 株式会社日立ハイテク | プラズマ処理装置およびウエハ処理方法 |
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2013
- 2013-02-01 JP JP2013018017A patent/JP6276919B2/ja active Active
- 2013-02-22 CN CN201310057014.2A patent/CN103972130B/zh active Active
- 2013-02-22 CN CN201810597169.8A patent/CN108511313B/zh active Active
- 2013-02-25 KR KR20130020147A patent/KR101486433B1/ko active IP Right Grant
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JP2015142050A (ja) * | 2014-01-29 | 2015-08-03 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
KR20170007130A (ko) | 2015-07-09 | 2017-01-18 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라스마 처리 장치 |
KR101840231B1 (ko) | 2015-07-09 | 2018-03-20 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라스마 처리 장치 |
US10930476B2 (en) | 2015-07-09 | 2021-02-23 | Hitachi High-Tech Corporation | Plasma processing device |
US11682542B2 (en) | 2015-07-09 | 2023-06-20 | Hitachi High-Tech Corporation | Plasma processing device |
JP2017076691A (ja) * | 2015-10-14 | 2017-04-20 | 日本特殊陶業株式会社 | セラミックヒータ及び静電チャック |
CN107910280A (zh) * | 2017-11-20 | 2018-04-13 | 上海华力微电子有限公司 | 一种建立全局调节模型进行优化快速热退火的方法 |
CN107910280B (zh) * | 2017-11-20 | 2020-01-21 | 上海华力微电子有限公司 | 一种建立全局调节模型进行优化快速热退火的方法 |
WO2021158450A1 (en) * | 2020-02-04 | 2021-08-12 | Lam Research Corporation | Optimization of radiofrequency signal ground return in plasma processing system |
WO2023175690A1 (ja) * | 2022-03-14 | 2023-09-21 | 株式会社日立ハイテク | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
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US20190057846A1 (en) | 2019-02-21 |
CN108511313B (zh) | 2021-03-05 |
US10141165B2 (en) | 2018-11-27 |
CN103972130A (zh) | 2014-08-06 |
CN108511313A (zh) | 2018-09-07 |
KR101486433B1 (ko) | 2015-01-26 |
CN103972130B (zh) | 2018-06-05 |
KR20140099158A (ko) | 2014-08-11 |
US20160155617A1 (en) | 2016-06-02 |
US20140216657A1 (en) | 2014-08-07 |
JP6276919B2 (ja) | 2018-02-07 |
US10796890B2 (en) | 2020-10-06 |
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