JP2014135884A - 蓄電システム、蓄電装置 - Google Patents

蓄電システム、蓄電装置 Download PDF

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Publication number
JP2014135884A
JP2014135884A JP2013257618A JP2013257618A JP2014135884A JP 2014135884 A JP2014135884 A JP 2014135884A JP 2013257618 A JP2013257618 A JP 2013257618A JP 2013257618 A JP2013257618 A JP 2013257618A JP 2014135884 A JP2014135884 A JP 2014135884A
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Japan
Prior art keywords
power storage
circuit
storage device
power
transistor
Prior art date
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JP2013257618A
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English (en)
Japanese (ja)
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JP2014135884A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013257618A priority Critical patent/JP2014135884A/ja
Publication of JP2014135884A publication Critical patent/JP2014135884A/ja
Publication of JP2014135884A5 publication Critical patent/JP2014135884A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/00047—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with provisions for charging different types of batteries
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/00032—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries characterised by data exchange
    • H02J7/00036—Charger exchanging data with battery
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0031—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H01M10/4257—Smart batteries, e.g. electronic circuits inside the housing of the cells or batteries
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00302—Overcharge protection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Secondary Cells (AREA)
  • Thin Film Transistor (AREA)
  • Theoretical Computer Science (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
JP2013257618A 2012-12-13 2013-12-13 蓄電システム、蓄電装置 Withdrawn JP2014135884A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013257618A JP2014135884A (ja) 2012-12-13 2013-12-13 蓄電システム、蓄電装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012272121 2012-12-13
JP2012272121 2012-12-13
JP2013257618A JP2014135884A (ja) 2012-12-13 2013-12-13 蓄電システム、蓄電装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018121490A Division JP6715885B2 (ja) 2012-12-13 2018-06-27 電気機器

Publications (2)

Publication Number Publication Date
JP2014135884A true JP2014135884A (ja) 2014-07-24
JP2014135884A5 JP2014135884A5 (enExample) 2017-01-12

Family

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Family Applications (6)

Application Number Title Priority Date Filing Date
JP2013257618A Withdrawn JP2014135884A (ja) 2012-12-13 2013-12-13 蓄電システム、蓄電装置
JP2018121490A Expired - Fee Related JP6715885B2 (ja) 2012-12-13 2018-06-27 電気機器
JP2020100312A Withdrawn JP2020156315A (ja) 2012-12-13 2020-06-09 電気機器
JP2022079923A Active JP7403578B2 (ja) 2012-12-13 2022-05-16 電気機器
JP2023209258A Active JP7645348B2 (ja) 2012-12-13 2023-12-12 蓄電装置
JP2025032572A Pending JP2025087778A (ja) 2012-12-13 2025-03-03 電気機器

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2018121490A Expired - Fee Related JP6715885B2 (ja) 2012-12-13 2018-06-27 電気機器
JP2020100312A Withdrawn JP2020156315A (ja) 2012-12-13 2020-06-09 電気機器
JP2022079923A Active JP7403578B2 (ja) 2012-12-13 2022-05-16 電気機器
JP2023209258A Active JP7645348B2 (ja) 2012-12-13 2023-12-12 蓄電装置
JP2025032572A Pending JP2025087778A (ja) 2012-12-13 2025-03-03 電気機器

Country Status (2)

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US (5) US9577446B2 (enExample)
JP (6) JP2014135884A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020104892A1 (ja) * 2018-11-22 2020-05-28 株式会社半導体エネルギー研究所 半導体装置及び充電制御システム
JP2020087540A (ja) * 2018-11-16 2020-06-04 株式会社半導体エネルギー研究所 半導体装置及び充電制御システム
JP2022140531A (ja) * 2017-11-02 2022-09-26 株式会社半導体エネルギー研究所 給電装置
US11480621B2 (en) 2017-11-02 2022-10-25 Semiconductor Energy Laboratory Co., Ltd. Capacity estimation method and capacity estimation system for power storage device
KR102895664B1 (ko) 2018-11-22 2025-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 충전 제어 시스템

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015121771A1 (en) * 2014-02-14 2015-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9742047B2 (en) 2014-08-11 2017-08-22 Milwaukee Electric Tool Corporation Battery pack with phase change material
JP5888387B1 (ja) * 2014-10-22 2016-03-22 ミツミ電機株式会社 電池保護回路及び電池保護装置、並びに電池パック
US20160129407A1 (en) * 2014-11-08 2016-05-12 Matthew Brett Wrosch Acceleration of alcohol aging and/or liquid mixing/maturation using remotely powered electromechanical agitation
WO2016160703A1 (en) 2015-03-27 2016-10-06 Harrup Mason K All-inorganic solvents for electrolytes
US10371129B2 (en) * 2016-02-26 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and sensor system
US10707531B1 (en) 2016-09-27 2020-07-07 New Dominion Enterprises Inc. All-inorganic solvents for electrolytes
US10790703B2 (en) * 2016-12-19 2020-09-29 Koji Yoden Smart wireless power transfer between devices
KR101871365B1 (ko) 2017-01-11 2018-06-26 삼성전자주식회사 모바일 엑스선 장치
JP6797042B2 (ja) * 2017-02-02 2020-12-09 株式会社ジャパンディスプレイ 表示装置
US10811993B2 (en) * 2017-12-15 2020-10-20 Ess Tech, Inc. Power conversion system and method
EP3706299A4 (en) * 2018-02-21 2021-06-23 Tae Jun Yoon STRAIGHTENING DEVICE WITH A PHANTOM ENERGY REDUCTION FUNCTION
JP2020137390A (ja) * 2019-02-26 2020-08-31 本田技研工業株式会社 バッテリ装置
US11772504B2 (en) * 2019-08-22 2023-10-03 Ioan Sasu Fast rechargeable battery assembly and recharging equipment
DE102019006065A1 (de) * 2019-08-28 2021-03-04 Kostal Automobil Elektrik Gmbh & Co. Kg Ladesystem zum Gleichstromladen der Traktionsbatterie eines elektrisch angetriebenen Kraftfahrzeugs
US12166219B2 (en) 2019-10-07 2024-12-10 Carrier Corporation Enclosure for an electronic device and associated manufacturing method
CN114005422A (zh) * 2020-12-24 2022-02-01 中国人民解放军军事科学院国防工程研究院工程防护研究所 一种便携式电致变色器件驱动控制器及方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184660B1 (en) * 1998-03-26 2001-02-06 Micro International, Ltd. High-side current-sensing smart battery charger
JP2006034032A (ja) * 2004-07-20 2006-02-02 Ricoh Co Ltd 二次電池を有する電池パック及びその電池パックを使用した充電システム装置
US20060181244A1 (en) * 2005-02-16 2006-08-17 Shiguo Luo Systems and methods for integration of charger regulation within a battery system
JP2006279844A (ja) * 2005-03-30 2006-10-12 Matsushita Electric Ind Co Ltd 携帯端末装置、充電器、および充電システム
JP2011109810A (ja) * 2009-11-17 2011-06-02 Panasonic Electric Works Co Ltd 非接触給電装置
JP2012134961A (ja) * 2010-12-03 2012-07-12 Semiconductor Energy Lab Co Ltd 回路、回路の駆動方法、及び半導体装置
US20120306433A1 (en) * 2011-05-31 2012-12-06 Nam Yun Kim Wireless power transmission and charging system, and power control method of wireless power transmission and charging system

Family Cites Families (129)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP2716374B2 (ja) * 1994-09-28 1998-02-18 インターナショナル・ビジネス・マシーンズ・コーポレイション 情報処理機器、情報処理機器のための給電装置及び給電方法
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
US5596567A (en) 1995-03-31 1997-01-21 Motorola, Inc. Wireless battery charging system
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
US5713939A (en) * 1996-09-16 1998-02-03 Sulzer Intermedics Inc. Data communication system for control of transcutaneous energy transmission to an implantable medical device
US5963012A (en) 1998-07-13 1999-10-05 Motorola, Inc. Wireless battery charging system having adaptive parameter sensing
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
KR100516693B1 (ko) * 2003-04-02 2005-09-22 주식회사 하이닉스반도체 불휘발성 프로그래머블 로직 회로
US6665802B1 (en) * 2000-02-29 2003-12-16 Infineon Technologies North America Corp. Power management and control for a microcontroller
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
US20060179973A1 (en) 2003-03-10 2006-08-17 Yanmar Co., Ltd. Baffle plate and transmission
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
KR101019337B1 (ko) 2004-03-12 2011-03-07 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
CN101057338B (zh) 2004-11-10 2011-03-16 佳能株式会社 采用无定形氧化物的场效应晶体管
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
CN101057333B (zh) 2004-11-10 2011-11-16 佳能株式会社 发光器件
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US7920519B2 (en) 2005-04-13 2011-04-05 Cisco Technology, Inc. Transferring context information to facilitate node mobility
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
GB0516401D0 (en) * 2005-08-09 2005-09-14 Univ Cambridge Tech Nanorod field-effect transistors
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101358954B1 (ko) 2005-11-15 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
WO2007067825A1 (en) 2005-12-07 2007-06-14 Advanced Bionics Corporation Battery protection and zero-volt battery recovery system for an implantable medical device
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
EP1936541B1 (fr) 2006-12-22 2017-08-30 EM Microelectronic-Marin SA Chargeur de batterie fonctionnant par "tout ou rien" avec circuit de protection d'alimentation pour circuits intégrés monolithiques utilisant l'énergie de l'antenne
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
WO2008133345A1 (en) 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP5116409B2 (ja) * 2007-09-07 2013-01-09 キヤノン株式会社 画像形成装置、画像形成方法、及び、画像形成プログラム
JP5262034B2 (ja) * 2007-09-14 2013-08-14 株式会社リコー 充放電保護回路および該充放電保護回路を組み込んだバッテリーパック、該バッテリーパックを用いた電子機器
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
RU2010138844A (ru) * 2008-02-22 2012-03-27 Эксесс Бизнес Груп Интернейшнл Ллс (Us) Индуктивная система энергоснабжения с регистрацией типа аккумуляторной батареи
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP2010109778A (ja) 2008-10-30 2010-05-13 Kyocera Corp 携帯端末充電装置、携帯端末および充電ヘッド
CN102282739B (zh) 2009-01-14 2014-05-07 三美电机株式会社 保护监视电路、电池组、二次电池监视电路以及保护电路
JP2010200485A (ja) 2009-02-25 2010-09-09 Sanyo Electric Co Ltd パック電池の保護システム
US9203248B2 (en) * 2009-09-28 2015-12-01 Hitachi, Ltd. Battery management system using non-volatile memory
KR101830195B1 (ko) 2009-12-18 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그것의 제작 방법
JP5544922B2 (ja) 2010-02-24 2014-07-09 セイコーエプソン株式会社 保護回路及び電子機器
KR101540039B1 (ko) 2010-04-23 2015-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5804698B2 (ja) 2010-12-10 2015-11-04 キヤノン株式会社 給電装置及び方法
US20120194124A1 (en) * 2011-01-31 2012-08-02 Nokia Corporation Wireless Battery Charging System
WO2012111069A1 (ja) * 2011-02-14 2012-08-23 三菱電機株式会社 プログラマブルコントローラ
US9444247B2 (en) * 2011-05-17 2016-09-13 Samsung Electronics Co., Ltd. Apparatus and method of protecting power receiver of wireless power transmission system
TWI616873B (zh) * 2011-05-20 2018-03-01 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
JP2013059212A (ja) * 2011-09-08 2013-03-28 Mitsumi Electric Co Ltd 電池保護回路及び電池保護装置、並びに電池パック
US8962386B2 (en) * 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6169376B2 (ja) * 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 電池管理ユニット、保護回路、蓄電装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184660B1 (en) * 1998-03-26 2001-02-06 Micro International, Ltd. High-side current-sensing smart battery charger
JP2002152988A (ja) * 1998-03-26 2002-05-24 O2 Micro Internatl Ltd ハイサイド電流感知スマートバッテリーチャージャー
JP2006034032A (ja) * 2004-07-20 2006-02-02 Ricoh Co Ltd 二次電池を有する電池パック及びその電池パックを使用した充電システム装置
US20060181244A1 (en) * 2005-02-16 2006-08-17 Shiguo Luo Systems and methods for integration of charger regulation within a battery system
JP2006279844A (ja) * 2005-03-30 2006-10-12 Matsushita Electric Ind Co Ltd 携帯端末装置、充電器、および充電システム
JP2011109810A (ja) * 2009-11-17 2011-06-02 Panasonic Electric Works Co Ltd 非接触給電装置
JP2012134961A (ja) * 2010-12-03 2012-07-12 Semiconductor Energy Lab Co Ltd 回路、回路の駆動方法、及び半導体装置
US20120306433A1 (en) * 2011-05-31 2012-12-06 Nam Yun Kim Wireless power transmission and charging system, and power control method of wireless power transmission and charging system

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022140531A (ja) * 2017-11-02 2022-09-26 株式会社半導体エネルギー研究所 給電装置
US11480621B2 (en) 2017-11-02 2022-10-25 Semiconductor Energy Laboratory Co., Ltd. Capacity estimation method and capacity estimation system for power storage device
JP7371177B2 (ja) 2017-11-02 2023-10-30 株式会社半導体エネルギー研究所 給電装置
US11817726B2 (en) 2017-11-02 2023-11-14 Semiconductor Energy Laboratory Co., Ltd. Power feeding device, electronic device, and operation method of power feeding device
JP2020087540A (ja) * 2018-11-16 2020-06-04 株式会社半導体エネルギー研究所 半導体装置及び充電制御システム
JP7327927B2 (ja) 2018-11-16 2023-08-16 株式会社半導体エネルギー研究所 半導体装置
WO2020104892A1 (ja) * 2018-11-22 2020-05-28 株式会社半導体エネルギー研究所 半導体装置及び充電制御システム
JPWO2020104892A1 (ja) * 2018-11-22 2021-12-16 株式会社半導体エネルギー研究所 半導体装置及び充電制御システム
JP7463290B2 (ja) 2018-11-22 2024-04-08 株式会社半導体エネルギー研究所 半導体装置
JP2024083378A (ja) * 2018-11-22 2024-06-21 株式会社半導体エネルギー研究所 電池パック及び電子機器
US12051924B2 (en) 2018-11-22 2024-07-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and charge control system
KR102895664B1 (ko) 2018-11-22 2025-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 충전 제어 시스템

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