JP2014131010A - ボンディングワイヤ、接続部構造、並びに半導体装置およびその製造方法 - Google Patents
ボンディングワイヤ、接続部構造、並びに半導体装置およびその製造方法 Download PDFInfo
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- JP2014131010A JP2014131010A JP2013226459A JP2013226459A JP2014131010A JP 2014131010 A JP2014131010 A JP 2014131010A JP 2013226459 A JP2013226459 A JP 2013226459A JP 2013226459 A JP2013226459 A JP 2013226459A JP 2014131010 A JP2014131010 A JP 2014131010A
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- Japan
- Prior art keywords
- bonding wire
- magnesium
- aluminum alloy
- silicon
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 239000011777 magnesium Substances 0.000 claims abstract description 26
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 25
- 239000011159 matrix material Substances 0.000 claims abstract description 16
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 claims description 58
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 57
- 229910021338 magnesium silicide Inorganic materials 0.000 claims description 57
- 229910052759 nickel Inorganic materials 0.000 claims description 28
- 239000010949 copper Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 230000032683 aging Effects 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 48
- LNUFLCYMSVYYNW-ZPJMAFJPSA-N [(2r,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6r)-6-[(2r,3r,4s,5r,6r)-6-[(2r,3r,4s,5r,6r)-6-[[(3s,5s,8r,9s,10s,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-2,3,4,5,6,7,8,9,11,12,14,15,16,17-tetradecahydro-1h-cyclopenta[a]phenanthren-3-yl]oxy]-4,5-disulfo Chemical compound O([C@@H]1[C@@H](COS(O)(=O)=O)O[C@@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@@H]1[C@@H](COS(O)(=O)=O)O[C@@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@@H]1[C@@H](COS(O)(=O)=O)O[C@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@@H]1C[C@@H]2CC[C@H]3[C@@H]4CC[C@@H]([C@]4(CC[C@@H]3[C@@]2(C)CC1)C)[C@H](C)CCCC(C)C)[C@H]1O[C@H](COS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@H](OS(O)(=O)=O)[C@H]1OS(O)(=O)=O LNUFLCYMSVYYNW-ZPJMAFJPSA-N 0.000 abstract description 10
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 abstract description 8
- 230000006866 deterioration Effects 0.000 description 32
- 238000002474 experimental method Methods 0.000 description 20
- 238000001816 cooling Methods 0.000 description 17
- 238000001556 precipitation Methods 0.000 description 11
- 230000006378 damage Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 7
- 238000005728 strengthening Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 238000003483 aging Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000015654 memory Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- IWZSHWBGHQBIML-ZGGLMWTQSA-N (3S,8S,10R,13S,14S,17S)-17-isoquinolin-7-yl-N,N,10,13-tetramethyl-2,3,4,7,8,9,11,12,14,15,16,17-dodecahydro-1H-cyclopenta[a]phenanthren-3-amine Chemical compound CN(C)[C@H]1CC[C@]2(C)C3CC[C@@]4(C)[C@@H](CC[C@@H]4c4ccc5ccncc5c4)[C@@H]3CC=C2C1 IWZSHWBGHQBIML-ZGGLMWTQSA-N 0.000 description 1
- 229910019018 Mg 2 Si Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/06—Alloys based on aluminium with magnesium as the next major constituent
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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Abstract
【解決手段】半導体装置10は、少なくともマグネシウムおよびシリコンを含有し、且つマグネシウムおよびシリコンの含有量の合計が0.03wt%以上0.3wt%以下であるアルミニウム合金からなるボンディングワイヤ17と、このボンディングワイヤ17が接続されるシリコンチップ16と、の接続部構造15を備える。シリコンチップ16の表面には、アルミニウム−シリコンフィルム16aが形成されている。接続部構造15は、ボンディングワイヤ17を構成するマトリクス層17a内と、このマトリクス層17aおよびアルミニウム−シリコンフィルム16aの間に形成されるアルミニウム合金の微細粒層17b内と、マトリクス層17aおよび微細粒層17bの界面とに、マグネシウムおよびシリコンを含む化合物18を備えている。
【選択図】図3
Description
11 銅板(Cuプレート)
12 筐体
13 回路層(被接続部材)
15 接続部構造
16 シリコンチップ(Siチップ、被接続部材)
16a アルミニウム−シリコンフィルム(アルミニウム材料、アルミ電極パット)
17 ボンディングワイヤ(アルミニウム合金)
17a マトリクス層
17b 微細粒層
18 化合物
19 セラミックス基板
Claims (7)
- 少なくともマグネシウムおよびシリコンを含有し、且つ前記マグネシウムおよび前記シリコンの含有量の合計が0.03wt%以上0.3wt%以下であるアルミニウム合金からなることを特徴とする、
ボンディングワイヤ。 - 前記アルミニウム合金は、0.03wt%以上0.3wt%以下の銅、および0.001wt%以上0.02wt%以下のニッケルの少なくとも一方を含有することを特徴とする、
請求項1に記載のボンディングワイヤ。 - 前記マグネシウムおよび前記シリコンの全部又は一部は、マグネシウムシリサイドとして析出しており、
前記マグネシウムシリサイドは、径方向断面における面積比率で0.1%以上10%以下の割合で析出していることを特徴とする、
請求項1又は2に記載のボンディングワイヤ。 - 請求項1〜3のいずれかに記載のボンディングワイヤと、前記ボンディングワイヤが接続され、アルミニウム材料からなる被接続部材と、の接続部構造であって、
前記ボンディングワイヤを構成するマトリクス層内と、前記マトリクス層および前記被接続部材の間に形成される前記アルミニウム合金の微細粒層内と、前記マトリクス層および前記微細粒層の界面とに、マグネシウムと、シリコンと、を含む化合物が析出していることを特徴とする、
接続部構造。 - 前記化合物は、アルミニウムを含むことを特徴とする、
請求項4に記載の接続部構造。 - 請求項4又は5に記載の接続部構造を備えることを特徴とする、
半導体装置。 - 請求項6に記載の半導体装置を製造する方法であって、
前記被接続部材に前記ボンディングワイヤを接続した後に、前記ボンディングワイヤに時効処理を施すことを特徴とする、
半導体装置の製造方法。
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JPS61166939A (ja) * | 1985-01-16 | 1986-07-28 | Furukawa Electric Co Ltd:The | 半導体素子ボンデイング用アルミニウム線材 |
JP2010040763A (ja) * | 2008-08-05 | 2010-02-18 | Tanaka Electronics Ind Co Ltd | 超音波ボンディング用アルミニウムリボン |
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FR2286886A1 (fr) * | 1974-10-04 | 1976-04-30 | Pechiney Aluminium | Conducteurs electriques en alliages d'aluminium et procedes d'obtention |
JP2008311383A (ja) | 2007-06-14 | 2008-12-25 | Ibaraki Univ | ボンディングワイヤ、それを使用したボンディング方法及び半導体装置並びに接続部構造 |
DE102009045184B4 (de) * | 2009-09-30 | 2019-03-14 | Infineon Technologies Ag | Bondverbindung zwischen einem Bonddraht und einem Leistungshalbleiterchip |
EP2597169A4 (en) * | 2010-07-20 | 2015-02-25 | Furukawa Electric Co Ltd | ALUMINUM ALLOY AND MANUFACTURING METHOD THEREFOR |
JP2013012728A (ja) * | 2011-06-03 | 2013-01-17 | Nippon Piston Ring Co Ltd | ボンディングワイヤ、接続部構造、並びに半導体装置およびその製造方法 |
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JPS61166939A (ja) * | 1985-01-16 | 1986-07-28 | Furukawa Electric Co Ltd:The | 半導体素子ボンデイング用アルミニウム線材 |
JP2010040763A (ja) * | 2008-08-05 | 2010-02-18 | Tanaka Electronics Ind Co Ltd | 超音波ボンディング用アルミニウムリボン |
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