JP2014110270A - Cleaning device - Google Patents

Cleaning device Download PDF

Info

Publication number
JP2014110270A
JP2014110270A JP2012262734A JP2012262734A JP2014110270A JP 2014110270 A JP2014110270 A JP 2014110270A JP 2012262734 A JP2012262734 A JP 2012262734A JP 2012262734 A JP2012262734 A JP 2012262734A JP 2014110270 A JP2014110270 A JP 2014110270A
Authority
JP
Japan
Prior art keywords
wafer
liquid
spinner table
cleaning
cleaned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012262734A
Other languages
Japanese (ja)
Inventor
Yasutaka Mizomoto
康隆 溝本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2012262734A priority Critical patent/JP2014110270A/en
Priority to KR1020130133392A priority patent/KR20140070371A/en
Priority to CN201310601770.7A priority patent/CN103855059A/en
Publication of JP2014110270A publication Critical patent/JP2014110270A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67023Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To enable scrub cleaning to be performed on a cleaned surface of a wafer in a spinner table and prevent rear surface contamination caused by contaminants coming around to a rear surface of the wafer.SOLUTION: An outer periphery holding means 20 comprises: a liquid reservoir part 21 which stores a liquid on an upper surface 21a and forms a liquid layer 6; a liquid supply port 22 which supplies the liquid to the upper surface 21a of the liquid reservoir part 21; and a lifting part 23 which selectively positions the liquid reservoir part 21 between an action position P1 and a non action position P2. Thus, when the wafer W is cleaned, the liquid reservoir part 21 is positioned at the action position P1, and an upper surface 7 of the liquid layer 6 formed at the liquid reservoir part 21 is located at a level equivalent to an upper surface 3 of the spinner table 2. Then, the liquid layer 6 holds an outer peripheral part Wc of the wafer W, and a surface Wa of the wafer W is cleaned by cleaning means 10. Further, a rear surface Wb of the wafer W is sealed by the liquid layer 6. The structure prevents contaminants from coming around to the rear surface Wb and reduces rear surface contamination of the wafer W.

Description

本発明は、ウェーハの面を洗浄する洗浄装置に関する。   The present invention relates to a cleaning apparatus for cleaning a surface of a wafer.

インゴットから切り出され両面にうねりのあるウェーハの両面や、ストリートによって区画されて複数のデバイスが表面に形成されたウェーハの裏面を、研削装置を用いて研削すると、ウェーハには研削屑(コンタミ)が付着するため、研削後にウェーハを洗浄することが必要となる。また、デバイスが形成されたウェーハの裏面研削後に、レーザー加工装置やダイシング装置によってストリートを分離させることによりウェーハを個々のデバイスに分割する際にも、ウェーハには切削屑等(コンタミ)が付着するため、分割後にウェーハを洗浄する必要がある。   Grinding debris (contamination) on the wafer when grinding both sides of the wafer cut from the ingot and the wafer with waviness on both sides and the back side of the wafer that is partitioned by the street and formed with multiple devices on the surface. Because of adhesion, it is necessary to clean the wafer after grinding. In addition, even when the wafer is divided into individual devices by separating the streets with a laser processing device or a dicing device after the back surface of the wafer on which the device is formed, cutting waste or the like (contamination) adheres to the wafer. Therefore, it is necessary to clean the wafer after dividing.

一般的な研削装置やダイシング装置には、チャックテーブルに保持されたウェーハを研削または切削するための加工手段と、研削または切削によって汚染されたウェーハを回転させながら洗浄水によって洗浄するスピン式の洗浄装置と、ウェーハを搬送する搬送装置とを少なくとも備えている。かかる洗浄装置には、ウェーハを保持して回転するスピンナーテーブルを有している。   In general grinding equipment and dicing equipment, a processing means for grinding or cutting a wafer held on a chuck table and a spin-type cleaning in which a wafer contaminated by grinding or cutting is cleaned with cleaning water while rotating. At least an apparatus and a transfer apparatus for transferring a wafer are provided. Such a cleaning apparatus has a spinner table that holds and rotates a wafer.

上記洗浄装置によって研削後や分割後のウェーハを洗浄する際には、搬送装置によってウェーハをスピンナーテーブルに搬送し作業位置に位置づけた状態において、洗浄装置は、スピンナーテーブルを回転させつつ洗浄水をウェーハの表面(被洗浄面)に供給することにより、研削屑や切削屑等を除去している(例えば、下記の特許文献1を参照)。   When cleaning the ground or divided wafer by the cleaning device, the cleaning device transports the cleaning water to the wafer while rotating the spinner table in a state where the wafer is transferred to the spinner table by the transfer device and positioned at the work position. Grinding debris, cutting debris, and the like are removed by supplying to the surface (surface to be cleaned) (see, for example, Patent Document 1 below).

また、スピンナーテーブルに保持された裏面側から搬送パッドによってウェーハを保持するために、スピンナーテーブルはウェーハの外径よりも小さく形成されていることが多い。このようなスピンナーテーブルにおいては、ウェーハの中心部のみがスピンナーテーブルに保持されるため、例えば、下記の特許文献2には、中心部がスピンナーテーブルに保持され外周部が保持されていないウェーハの保持されていない外周部を支持するブラシ手段を備えた洗浄装置が提案されている。この洗浄装置では、ウェーハの裏面全面を支持した状態でウェーハの表面を洗浄することができる。   Further, in order to hold the wafer by the transfer pad from the back side held by the spinner table, the spinner table is often formed smaller than the outer diameter of the wafer. In such a spinner table, since only the center portion of the wafer is held on the spinner table, for example, in Patent Document 2 below, holding of a wafer in which the center portion is held on the spinner table and the outer peripheral portion is not held. There has been proposed a cleaning apparatus provided with brush means for supporting an outer peripheral portion which is not formed. In this cleaning apparatus, the surface of the wafer can be cleaned in a state where the entire back surface of the wafer is supported.

特開2004−322168号公報JP 2004-322168 A 特開2000−260740号公報JP 2000-260740 A

しかしながら、ウェーハの外周部をブラシによって支持する構成とした洗浄装置では、ウェーハの表面にあるコンタミがウェーハの裏面側に回りこんでしまい、裏面に接触しているブラシによる力も加わってコンタミがウェーハの裏面外周に付着し除去できなくなることがある。そのため、コンタミが除去されないままウェーハの加工を続けてしまい、別の洗浄工程においてもウェーハの裏面外周に付着したコンタミを除去することができないため、デバイスの品質に悪影響をもたらすという問題が生じている。   However, in a cleaning device configured to support the outer periphery of the wafer with a brush, contamination on the wafer surface wraps around the back side of the wafer, and the force applied by the brush in contact with the back surface also adds contamination to the wafer. It may adhere to the outer periphery of the back surface and cannot be removed. Therefore, processing of the wafer is continued without removing the contamination, and the contamination adhered to the outer periphery of the back surface of the wafer cannot be removed even in another cleaning process, resulting in a problem that adversely affects the quality of the device. .

本発明は、上記の事情に鑑みてなされたものであり、ウェーハのサイズよりも小さい外径を有するスピンナーテーブルであっても、ウェーハの表面を接触(スクラブ)洗浄することができ、かつ、ウェーハの裏面にコンタミが回り込むことによる裏面汚染を防ぐことに発明の解決すべき課題がある。   The present invention has been made in view of the above circumstances, and even with a spinner table having an outer diameter smaller than the size of the wafer, the surface of the wafer can be contacted (scrubbed) and cleaned. There is a problem to be solved by the present invention to prevent back surface contamination caused by contamination around the back surface.

本発明は、ウェーハの外径よりも小径に形成され、ウェーハを上面に保持して高速回転可能なスピンナーテーブルと、該スピンナーテーブルの上面に保持されたウェーハの被洗浄面に洗浄水を供給し該ウェーハの被洗浄面を洗浄する洗浄手段と、該スピンナーテーブルを囲繞して形成されウェーハの外周部を液体層によって支持する外周保持手段と、を備え、該外周保持手段は、液体を上面に貯留し液体層を形成する液体貯留部と、該液体貯留部の上面に液体を供給する液体供給口と、該液体貯留部を作用位置と非作用位置とに選択的に位置づける昇降部と、を備え、該作用位置では、該液体貯留部に形成された該液体層の上面が該スピンナーテーブルの上面と同等の高さ位置に位置づけられ、該非作用位置では、該液体貯留部の上面が該スピンナーテーブルの上面よりも下方に位置づけられ、ウェーハ洗浄の際には、該液体貯留部は該作用位置に位置づけられ、該液体供給口から液体が該液体貯留部の上面に供給され、該スピンナーテーブルの上面に保持されたウェーハの外周部が該液体貯留部に形成された液体層により保持されるとともに、該スピンナーテーブルの回転によってウェーハが回転し該洗浄手段によりウェーハの被洗浄面の洗浄が行われ、ウェーハ乾燥の際には、該液体貯留部は該非作用位置に位置づけられ、該スピンナーテーブルが高速回転することによってウェーハの被洗浄面の乾燥が行われること、を特徴とする洗浄装置である。   The present invention provides a spinner table that is formed with a diameter smaller than the outer diameter of the wafer and that can rotate at a high speed while holding the wafer on the upper surface, and supplying cleaning water to the surface to be cleaned held on the upper surface of the spinner table. Cleaning means for cleaning the surface to be cleaned of the wafer, and outer periphery holding means formed by surrounding the spinner table and supporting the outer peripheral portion of the wafer by a liquid layer. A liquid storage section that stores and forms a liquid layer, a liquid supply port that supplies liquid to the upper surface of the liquid storage section, and an elevating section that selectively positions the liquid storage section at an operating position and a non-operating position. The upper surface of the liquid layer formed in the liquid storage portion is positioned at a height position equivalent to the upper surface of the spinner table, and the upper surface of the liquid storage portion is the upper surface of the spinner table in the non-operation position. The liquid storage unit is positioned below the upper surface of the inner table, and at the time of wafer cleaning, the liquid storage unit is positioned at the working position, and liquid is supplied from the liquid supply port to the upper surface of the liquid storage unit. The outer peripheral portion of the wafer held on the upper surface of the wafer is held by the liquid layer formed in the liquid storage portion, and the wafer is rotated by the rotation of the spinner table, and the cleaning surface of the wafer is cleaned by the cleaning means. In the cleaning of the wafer, the liquid storage portion is positioned at the non-operating position, and the surface to be cleaned of the wafer is dried by rotating the spinner table at a high speed. .

本発明にかかる洗浄装置には、スピンナーテーブルを囲繞する外周保持手段を備え、外周保持手段は、液体を上面に貯留し液体層を形成する液体貯留部と、液体貯留部の上面に液体を供給する液体供給口と、液体貯留部を作用位置と非作用位置とに選択的に位置づける昇降部と、を備えており、ウェーハの洗浄の際には、液体貯留部が作用位置に位置づけられることで液体貯留部に形成された液体層の上面がスピンナーテーブルの上面と同等の高さとなってウェーハの外周部を保持することができるため、その状態において洗浄手段によってウェーハの表面を洗浄することができる。
また、液体層がウェーハの外周部を保持することでウェーハの外周部側の裏面が液体層によって封止されるため、ウェーハの表面にあるコンタミが裏面に回り込むことを防ぐことができる。したがって、ウェーハの裏面汚染を低減することができ、デバイスの品質に悪影響を及ぼすことを抑制することができる。
The cleaning device according to the present invention includes an outer periphery holding unit that surrounds the spinner table, and the outer periphery holding unit supplies a liquid to the upper surface of the liquid storing unit that stores the liquid on the upper surface and forms a liquid layer. A liquid supply port and an elevating part that selectively positions the liquid storage part at the action position and the non-action position, and when the wafer is cleaned, the liquid storage part is positioned at the action position. Since the upper surface of the liquid layer formed in the liquid storage portion is at the same height as the upper surface of the spinner table and can hold the outer periphery of the wafer, the surface of the wafer can be cleaned by the cleaning means in that state. .
Further, since the liquid layer holds the outer peripheral portion of the wafer, the back surface on the outer peripheral portion side of the wafer is sealed by the liquid layer, so that contamination on the front surface of the wafer can be prevented from entering the back surface. Therefore, the backside contamination of the wafer can be reduced, and adverse effects on device quality can be suppressed.

洗浄装置の構成を示す斜視図である。It is a perspective view which shows the structure of a washing | cleaning apparatus. スピンナーテーブル及び外周保持手段の構成を示す断面図である。It is sectional drawing which shows the structure of a spinner table and an outer periphery holding means. 洗浄装置を搭載した研削装置の一例を示す斜視図である。It is a perspective view which shows an example of the grinding device carrying a washing | cleaning apparatus. 洗浄工程を示す断面図である。It is sectional drawing which shows a washing | cleaning process. 乾燥工程を示す断面図である。It is sectional drawing which shows a drying process.

図1及び図2を参照しながら、被加工物であるウェーハWを洗浄する洗浄装置1の構成について説明する。洗浄装置1は、被加工物を保持して高速回転可能なスピンナーテーブル2と、被加工物を洗浄する洗浄手段10と、スピンナーテーブル2を囲繞して形成され被加工物の外周部を支持する外周保持手段20と、を備え、収容器8の中央部に形成されたスペースに収容された構成となっている。   With reference to FIGS. 1 and 2, the configuration of the cleaning apparatus 1 for cleaning the wafer W, which is a workpiece, will be described. The cleaning apparatus 1 holds a workpiece and can rotate at a high speed, a cleaning means 10 for cleaning the workpiece, and a peripheral portion of the workpiece formed around the spinner table 2. Outer peripheral holding means 20 and is configured to be accommodated in a space formed in the central portion of the container 8.

図1及び図2に示すように、スピンナーテーブル2は、被加工物の外径よりも小径に形成されている。スピンナーテーブル2は、多孔質部材4を有しており、その表面側が被加工物を吸引保持する上面3となっている。スピンナーテーブル2の下端には、スピンナーテーブル2を高速回転させる回転軸5が連結されている。なお、スピンナーテーブル2は、Z軸方向に昇降可能な構成となっており、被加工物の搬送エリア9aと洗浄エリア9bとの間を移動可能となっている   As shown in FIGS. 1 and 2, the spinner table 2 is formed with a smaller diameter than the outer diameter of the workpiece. The spinner table 2 has a porous member 4, and the surface side thereof is an upper surface 3 for sucking and holding a workpiece. A rotating shaft 5 that rotates the spinner table 2 at a high speed is connected to the lower end of the spinner table 2. The spinner table 2 is configured to be movable up and down in the Z-axis direction, and is movable between the workpiece conveyance area 9a and the cleaning area 9b.

洗浄手段10は、被加工物を接触(スクラブ)洗浄するスクラブ洗浄部材11(図4参照)を備えている。スクラブ洗浄部材11は、スピンナーテーブル2の上方において、支持柱12によって、水平方向の回転軸を中心として回転可能に支持されている。なお、スクラブ洗浄部材11としては、例えばスポンジを使用することができるが、特に限定されるものではない。   The cleaning means 10 includes a scrub cleaning member 11 (see FIG. 4) for cleaning (scrubbing) the workpiece. The scrub cleaning member 11 is supported above the spinner table 2 by a support column 12 so as to be rotatable about a horizontal rotation axis. As the scrub cleaning member 11, for example, a sponge can be used, but it is not particularly limited.

洗浄手段10には、ウェーハ洗浄の際にスピンナーテーブル2に保持された被加工物に洗浄水を供給する洗浄水供給ノズル13と、ウェーハ乾燥の際にスピンナーテーブル2に保持された被加工物に圧縮エアーを供給する圧縮エアー供給ノズル15とを備えている。洗浄水供給ノズル13及び圧縮エアー供給ノズル15は、スピンナーテーブル2の上方を半径方向に旋回させる支持部17に連結されている。洗浄水供給ノズル13は、洗浄水供給源14に接続され、圧縮エアー供給ノズル15は、エアー供給源16に接続されている。   The cleaning means 10 includes a cleaning water supply nozzle 13 for supplying cleaning water to the workpiece held on the spinner table 2 during wafer cleaning, and a workpiece held on the spinner table 2 during wafer drying. And a compressed air supply nozzle 15 for supplying compressed air. The cleaning water supply nozzle 13 and the compressed air supply nozzle 15 are connected to a support portion 17 that rotates the upper portion of the spinner table 2 in the radial direction. The cleaning water supply nozzle 13 is connected to a cleaning water supply source 14, and the compressed air supply nozzle 15 is connected to an air supply source 16.

図1に示すように、外周保持手段20は、液体を貯留することができる上面21aを有する液体貯留部21を備えている。また、外周保持手段20は、液体貯留部21の上面21aにむけて液体を供給するリング状の液体供給口22を備えており、図2に示すように、液体供給口22は、液体貯留部21の内部に配設された供給管24に連通している。供給管24は、開閉バルブ25を介して供給源26に接続されており、開閉バルブ25を開くと、液体供給口22から液体貯留部21の上面21aにむけて液体を供給することができる。   As shown in FIG. 1, the outer periphery holding | maintenance means 20 is provided with the liquid storage part 21 which has the upper surface 21a which can store a liquid. Further, the outer periphery holding means 20 includes a ring-shaped liquid supply port 22 that supplies a liquid toward the upper surface 21a of the liquid storage unit 21, and as shown in FIG. 21 communicates with a supply pipe 24 disposed in the interior. The supply pipe 24 is connected to a supply source 26 via an opening / closing valve 25. When the opening / closing valve 25 is opened, the liquid can be supplied from the liquid supply port 22 toward the upper surface 21a of the liquid storage unit 21.

さらに、外周保持手段20には、液体貯留部21を昇降させる昇降部23を備えている。昇降部23は、ピストン23aを昇降させることによって液体貯留部21をZ軸方向に昇降させ、図2に示すように、液体貯留部21を作用位置P1と非作用位置P2とに選択的に位置づけることができる。   Furthermore, the outer periphery holding means 20 includes an elevating unit 23 that elevates and lowers the liquid storage unit 21. The elevating part 23 raises and lowers the liquid storage part 21 in the Z-axis direction by raising and lowering the piston 23a, and selectively positions the liquid storage part 21 at the action position P1 and the non-action position P2, as shown in FIG. be able to.

図2に示すように、作用位置P1とは、液体貯留部21の上面21aに貯留した液体層6の上面がスピンナーテーブル2の上面3と同等の高さとなる場合における液体貯留部21の高さ位置を指し、被加工物の外周部を液体層6により保持することが可能な液体貯留部21の高さ位置を意味する。したがって、液体層6によって被加工物を保持することができれば、液体層6の上面の高さとスピンナーテーブル2の上面3の高さとが完全に一致する必要はない。また、液体層6の厚みに応じて作用位置も変動する。一方、非作用位置P2とは、液体貯留部21の上面21aがスピンナーテーブル2の上面3よりも下方にあるときの位置を指し、液体層6による被加工物の保持が作用しない場合における液体貯留部21の高さ位置を意味する。   As shown in FIG. 2, the action position P <b> 1 is the height of the liquid reservoir 21 when the upper surface of the liquid layer 6 stored on the upper surface 21 a of the liquid reservoir 21 is equivalent to the upper surface 3 of the spinner table 2. It refers to the position, and means the height position of the liquid reservoir 21 that can hold the outer periphery of the workpiece by the liquid layer 6. Therefore, if the workpiece can be held by the liquid layer 6, it is not necessary that the height of the upper surface of the liquid layer 6 and the height of the upper surface 3 of the spinner table 2 coincide completely. Further, the operation position varies depending on the thickness of the liquid layer 6. On the other hand, the non-operation position P2 refers to a position when the upper surface 21a of the liquid storage unit 21 is below the upper surface 3 of the spinner table 2, and the liquid storage in the case where the workpiece is not retained by the liquid layer 6. This means the height position of the part 21.

洗浄装置1は、例えば、図3に示す研削装置30に適用することができる。研削装置30は、Y軸方向にのびる基台31と、基台31の後部側に立設されたコラム32とを備えている。   The cleaning apparatus 1 can be applied to, for example, the grinding apparatus 30 shown in FIG. The grinding device 30 includes a base 31 extending in the Y-axis direction and a column 32 erected on the rear side of the base 31.

基台31のY軸方向前部には、ステージ33a及びステージ33bが形成されている。ステージ33aには、研削前の被加工物を収容するカセット34aが載置され、ステージ33bには、研削後の被加工物を収容するカセット34bが載置されている。カセット34a及びカセット34bの近傍には、研削前の被加工物をカセット34aから搬出するとともに研削後の被加工物をカセット34bへ搬入する搬送手段35が配設されている。搬送手段35の可動領域には、被加工物が仮置きされる仮置き手段36と、研削後の被加工物を洗浄する洗浄装置1とが配設されている。   A stage 33 a and a stage 33 b are formed at the front portion of the base 31 in the Y-axis direction. A cassette 34a that accommodates the workpiece before grinding is placed on the stage 33a, and a cassette 34b that accommodates the workpiece after grinding is placed on the stage 33b. In the vicinity of the cassette 34a and the cassette 34b, there is disposed a conveying means 35 for carrying out the workpiece before grinding from the cassette 34a and carrying the workpiece after grinding into the cassette 34b. In the movable region of the conveying means 35, a temporary placement means 36 for temporarily placing the work piece and a cleaning device 1 for cleaning the work piece after grinding are disposed.

基台31の上面には、回転可能なターンテーブル37が配設されており、このターンテーブル37によって、被加工物を保持し自転可能なチャックテーブル38が支持されている。コラム32の側部においては、被加工物に研削を施す研削手段39が研削送り手段40によって昇降可能に支持されている。研削手段39は昇降可能であり、研削手段39には、円環状に配設され回転可能な研削砥石390を備えている。   A rotatable turntable 37 is disposed on the upper surface of the base 31, and the turntable 37 supports a chuck table 38 that holds a workpiece and can rotate. On the side of the column 32, a grinding means 39 for grinding the workpiece is supported by the grinding feed means 40 so as to be movable up and down. The grinding means 39 can be moved up and down, and the grinding means 39 is provided with a grinding wheel 390 that is disposed in an annular shape and is rotatable.

仮置き手段36の近傍には、研削前の被加工物を仮置き手段36からチャックテーブル38に搬送する第1の搬送アーム41が配設され、第1の搬送アーム41に隣接して研削後の被加工物を洗浄装置1に搬送する第2の搬送アーム42が配設されている。   In the vicinity of the temporary placement means 36, a first transfer arm 41 for transferring the workpiece before grinding from the temporary placement means 36 to the chuck table 38 is disposed, and after the grinding, adjacent to the first transfer arm 41. A second transfer arm 42 for transferring the workpiece to the cleaning apparatus 1 is provided.

このように構成される研削装置30において、図1及び図2に示したウェーハWを研削する際の研削装置30の動作について説明する。なお、ウェーハWは、表面Waが被研削面であり、表面Waと反対側にある面がスピンナーテーブル2の上面3に載置する裏面Wbとなっている。さらに、ウェーハWをスピンナーテーブル2の上面3に載置したときに、上面3からはみ出すウェーハWの外周部分が外周部Wcとなっている。   The operation of the grinding device 30 when grinding the wafer W shown in FIGS. 1 and 2 in the grinding device 30 configured as described above will be described. The wafer W has a surface Wa to be ground, and a surface opposite to the surface Wa is a back surface Wb to be placed on the upper surface 3 of the spinner table 2. Furthermore, when the wafer W is placed on the upper surface 3 of the spinner table 2, the outer peripheral portion of the wafer W that protrudes from the upper surface 3 is the outer peripheral portion Wc.

研削前のウェーハWは、カセット34aに収容され、搬送手段35によってチャックテーブル38に搬送される。そして、ターンテーブル37の回転によってウェーハWが研削手段39の下方に移動した後、チャックテーブル38が回転するとともに、研削砥石390が回転しながら研削手段39が降下し、研削砥石390がウェーハWの表面Waに接触して研削が行われる。   The wafer W before grinding is accommodated in the cassette 34 a and is transferred to the chuck table 38 by the transfer means 35. Then, after the wafer W is moved below the grinding means 39 by the rotation of the turntable 37, the chuck table 38 is rotated, the grinding means 39 is lowered while the grinding wheel 390 is rotated, and the grinding wheel 390 is moved to the wafer W. Grinding is performed in contact with the surface Wa.

表面Waの研削終了後は、ターンテーブル37が回転してウェーハWが洗浄装置1の近傍に位置づけされる。このとき、ウェーハWの表面Waには、研削屑等のコンタミが付着している。   After the grinding of the surface Wa, the turntable 37 rotates and the wafer W is positioned in the vicinity of the cleaning apparatus 1. At this time, contaminants such as grinding dust adhere to the surface Wa of the wafer W.

研削後のウェーハWは、図3に示す第2の搬送アーム42によって表面Wa側が保持され、チャックテーブル38から収容器8の搬送エリア9aで待機するスピンナーテーブル2に搬送され、表面Waが露出した状態で保持される。そして、スピンナーテーブル2は、ウェーハWを保持しながらZ軸方向に下降して、図1に示した収容器8の洗浄エリア9bに移動する。   The wafer Wa after grinding is held on the surface Wa side by the second transfer arm 42 shown in FIG. 3, and transferred from the chuck table 38 to the spinner table 2 waiting in the transfer area 9a of the container 8, and the surface Wa is exposed. Held in a state. Then, the spinner table 2 descends in the Z-axis direction while holding the wafer W, and moves to the cleaning area 9b of the container 8 shown in FIG.

図4に示すように、スピンナーテーブル2からはみ出したウェーハWの外周部Wcを外周保持手段20によって保持する。具体的には、昇降部23がピストン23aを上昇させ、液体貯留部21を作用位置P1に位置づける。   As shown in FIG. 4, the outer peripheral portion Wc of the wafer W protruding from the spinner table 2 is held by the outer peripheral holding means 20. Specifically, the raising / lowering part 23 raises the piston 23a, and positions the liquid storage part 21 in the action position P1.

液体貯留部21が作用位置P1に位置づけられた後、開閉バルブ25を開き供給管24に液体を供給する。そして、図4に示すように、供給管24を通じて液体供給口22から液体貯留部21の上面21aに向けて液体が供給されると、上面21aの上に液体層6が形成される。なお、液体としては、例えば純水を使用することができる。   After the liquid storage unit 21 is positioned at the operation position P <b> 1, the opening / closing valve 25 is opened to supply liquid to the supply pipe 24. As shown in FIG. 4, when the liquid is supplied from the liquid supply port 22 toward the upper surface 21a of the liquid storage unit 21 through the supply pipe 24, the liquid layer 6 is formed on the upper surface 21a. For example, pure water can be used as the liquid.

このとき、液体貯留部21は作用位置P1に位置づけられているため、液体層6の上面7は、スピンナーテーブル2の上面3とほぼ同じ高さ位置に位置づけられ、液体層6によってウェーハWの外周部Wcが保持される。   At this time, since the liquid reservoir 21 is positioned at the action position P1, the upper surface 7 of the liquid layer 6 is positioned at substantially the same height as the upper surface 3 of the spinner table 2, and the outer periphery of the wafer W is surrounded by the liquid layer 6. The part Wc is held.

次に、液体層6によりウェーハWの外周部Wcを保持しながら、回転軸5は、スピンナーテーブル2を、例えば矢印B方向に回転させてウェーハWの表面Waを洗浄する。具体的には、スポンジ11をウェーハWの表面Waに接触させるとともに、例えば矢印A方向に回転させてスクラブ洗浄を行う。ウェーハWの洗浄中は、洗浄水供給ノズル13からウェーハWの表面Waに洗浄水を供給し続ける。このようにして液体層6がウェーハWの外周部Wcを保持して洗浄を行うことにより、スピンナーテーブル2がウェーハWより小径である場合も、ウェーハWの表面全面を洗浄することができる。また、ウェーハWの外周部Wc側の裏面Wbが液体層6によって封止されるため、ウェーハWの表面Waにあるコンタミが裏面Wbに回り込むことがない。   Next, while the outer peripheral portion Wc of the wafer W is held by the liquid layer 6, the rotating shaft 5 rotates the spinner table 2 in the direction of arrow B, for example, to clean the surface Wa of the wafer W. Specifically, the sponge 11 is brought into contact with the front surface Wa of the wafer W and, for example, rotated in the direction of arrow A to perform scrub cleaning. During the cleaning of the wafer W, the cleaning water is continuously supplied from the cleaning water supply nozzle 13 to the surface Wa of the wafer W. In this way, the liquid layer 6 performs cleaning while holding the outer peripheral portion Wc of the wafer W, so that the entire surface of the wafer W can be cleaned even when the spinner table 2 has a smaller diameter than the wafer W. Moreover, since the back surface Wb on the outer peripheral portion Wc side of the wafer W is sealed by the liquid layer 6, the contamination on the front surface Wa of the wafer W does not go around the back surface Wb.

このようにしてウェーハWの表面Waを洗浄した後、図5に示すように、ウェーハWの表面Waの乾燥工程を実施する。まず、ピストン23aを下降させ、液体貯留部21を非作用位置P2に位置づける。   After cleaning the surface Wa of the wafer W in this way, a drying step of the surface Wa of the wafer W is performed as shown in FIG. First, the piston 23a is lowered to position the liquid reservoir 21 at the non-operation position P2.

次いで、回転軸5が回転し、スピンナーテーブル2を例えば3000rpm以上の速度で高速回転させる。このとき、スピンナーテーブル2が高速回転することによりウェーハWの表面Waに発生する遠心力を利用して表面Waに付着した液体を飛散させる。これと同時に圧縮エアー供給ノズル15から高速回転するウェーハWの表面Waに向けて圧縮エアーを供給する。これらの動作をウェーハWの表面Waが乾燥するまで継続する。ウェーハWを乾燥させる際には、スピンナーテーブル2が高速回転することによりウェーハWに遠心力がはたらくため、液体層6を形成しなくても、外周部Wcが垂れ下がることはない。   Next, the rotating shaft 5 rotates, and the spinner table 2 is rotated at a high speed, for example, at a speed of 3000 rpm or more. At this time, the liquid adhering to the surface Wa is scattered using the centrifugal force generated on the surface Wa of the wafer W as the spinner table 2 rotates at a high speed. At the same time, compressed air is supplied from the compressed air supply nozzle 15 toward the surface Wa of the wafer W rotating at high speed. These operations are continued until the surface Wa of the wafer W is dried. When the wafer W is dried, the spinner table 2 rotates at a high speed, so that a centrifugal force is applied to the wafer W. Therefore, even if the liquid layer 6 is not formed, the outer peripheral portion Wc does not hang down.

以上のように、洗浄装置1には、スピンナーテーブル2を囲繞する外周保持手段20を備え、外周保持手段20は、液体を上面21aに貯留し液体層6を形成する液体貯留部21と、液体貯留部21の上面21aに液体を供給する液体供給口22と、液体貯留部21を作用位置P1と非作用位置P2とに選択的に位置づける昇降部23と、を備えているため、ウェーハの洗浄の際には、液体貯留部21が作用位置P1に位置づけられることで液体貯留部21に形成された液体層6の上面7がスピンナーテーブル2の上面3と同等の高さとなってウェーハWの外周部Wcを保持することができ、ウェーハWの表面Waをスポンジ11でスクラブ洗浄することができる。
また、液体層6がウェーハWの外周部Wcを保持することでウェーハWの外周部Wc側の裏面Wbが液体層6によって封止されるため、ウェーハWの表面Waにあるコンタミが裏面に回り込むことを防ぐことができる。これにより、ウェーハの裏面汚染を低減することができる。
As described above, the cleaning apparatus 1 includes the outer peripheral holding means 20 surrounding the spinner table 2, and the outer peripheral holding means 20 stores the liquid on the upper surface 21 a and forms the liquid layer 6, and the liquid Since the liquid supply port 22 for supplying the liquid to the upper surface 21a of the storage unit 21 and the elevating unit 23 for selectively positioning the liquid storage unit 21 at the operation position P1 and the non-operation position P2, the wafer cleaning is performed. In this case, the upper surface 7 of the liquid layer 6 formed in the liquid storage portion 21 becomes the same height as the upper surface 3 of the spinner table 2 by positioning the liquid storage portion 21 at the operation position P1. The portion Wc can be held, and the surface Wa of the wafer W can be scrubbed with the sponge 11.
Further, since the liquid layer 6 holds the outer peripheral portion Wc of the wafer W, the back surface Wb on the outer peripheral portion Wc side of the wafer W is sealed by the liquid layer 6, so that contamination on the front surface Wa of the wafer W wraps around the back surface. Can be prevented. Thereby, the back surface contamination of a wafer can be reduced.

1:洗浄装置 2:スピンナーテーブル 3:上面
4:多孔質部材 5:回転軸 6:液体層 7:上面
8:収容器 9a:搬送エリア 9b:洗浄エリア
10:洗浄手段 11:スクラブ洗浄部材 12:支持柱 13:洗浄水供給ノズル
14:洗浄水供給源 15:圧縮エアー供給ノズル 16:エアー供給源 17:支持部
20:外周保持手段 21:液体貯留部 21a:上面
22:液体供給口 23:昇降部 23a:ピストン
24:供給管 25:開閉バルブ 26:供給源
30:研削装置
31:基台 32:コラム 33a,33b:ステージ
34a,34b:カセット 35:搬送手段
36:仮置き手段 37:ターンテーブル 38:チャックテーブル
39:研削手段
40:研削送り手段 41:第1の搬送アーム 42:第2の搬送アーム
P1:作用位置 P2:非作用位置
W:ウェーハ Wa:表面(被洗浄面) Wb:裏面 Wc:外周部
1: Cleaning device 2: Spinner table 3: Upper surface 4: Porous member 5: Rotating shaft 6: Liquid layer 7: Upper surface 8: Container 9a: Transport area 9b: Cleaning area 10: Cleaning means 11: Scrub cleaning member 12: Support column 13: Wash water supply nozzle 14: Wash water supply source 15: Compressed air supply nozzle 16: Air supply source 17: Support unit 20: Peripheral holding means 21: Liquid storage unit 21a: Upper surface 22: Liquid supply port 23: Elevation Part 23a: Piston 24: Supply pipe 25: Open / close valve 26: Supply source 30: Grinding device 31: Base 32: Column 33a, 33b: Stages 34a, 34b: Cassette 35: Transfer means 36: Temporary placement means 37: Turntable 38: Chuck table 39: Grinding means
40: grinding feed means 41: first transfer arm 42: second transfer arm P1: working position P2: non-working position W: wafer Wa: front surface (surface to be cleaned) Wb: back surface Wc: outer periphery

Claims (1)

ウェーハの外径よりも小径に形成され、ウェーハを上面に保持して回転可能なスピンナーテーブルと、
該スピンナーテーブルの上面に保持されたウェーハの被洗浄面に洗浄水を供給し該ウェーハの被洗浄面を洗浄する洗浄手段と、
該スピンナーテーブルを囲繞して形成されウェーハの外周部を液体層によって支持する外周保持手段と、を備え、
該外周保持手段は、液体を上面に貯留し液体層を形成する液体貯留部と、
該液体貯留部の上面に液体を供給する液体供給口と、
該液体貯留部を作用位置と非作用位置とに選択的に位置づける昇降部と、を備え、
該作用位置では、該液体貯留部に形成された該液体層の上面が該スピンナーテーブルの上面と同等の高さ位置に位置づけられ、
該非作用位置では、該液体貯留部の上面が該スピンナーテーブルの上面よりも下方に位置づけられ、
ウェーハ洗浄の際には、該液体貯留部は該作用位置に位置づけられ該液体供給口から液体が該液体貯留部の上面に供給され、該スピンナーテーブルの上面に保持されたウェーハの外周部が該液体貯留部に形成された液体層により保持されるとともに該スピンナーテーブルの回転によってウェーハが回転し該洗浄手段によりウェーハの被洗浄面の洗浄が行われ、
ウェーハ乾燥の際には、該液体貯留部は該非作用位置に位置づけられ、該スピンナーテーブルが高速回転することによってウェーハの被洗浄面の乾燥が行われること、を特徴とする洗浄装置。
A spinner table that is formed smaller than the outer diameter of the wafer and that can rotate while holding the wafer on the upper surface,
Cleaning means for supplying cleaning water to the surface to be cleaned held on the upper surface of the spinner table to clean the surface to be cleaned;
An outer periphery holding means formed around the spinner table and supporting the outer periphery of the wafer with a liquid layer;
The outer periphery holding means stores a liquid on the upper surface and forms a liquid layer;
A liquid supply port for supplying liquid to the upper surface of the liquid storage section;
An elevating part that selectively positions the liquid storage part at the action position and the non-action position, and
In the working position, the upper surface of the liquid layer formed in the liquid reservoir is positioned at a height position equivalent to the upper surface of the spinner table,
In the non-operating position, the upper surface of the liquid reservoir is positioned below the upper surface of the spinner table,
During wafer cleaning, the liquid reservoir is positioned at the working position, liquid is supplied from the liquid supply port to the upper surface of the liquid reservoir, and the outer periphery of the wafer held on the upper surface of the spinner table is The wafer is rotated by the rotation of the spinner table and held by the liquid layer formed in the liquid reservoir, and the cleaning surface of the wafer is cleaned by the cleaning means,
A cleaning apparatus characterized in that when the wafer is dried, the liquid storage portion is positioned at the non-operation position, and the surface to be cleaned of the wafer is dried by rotating the spinner table at a high speed.
JP2012262734A 2012-11-30 2012-11-30 Cleaning device Pending JP2014110270A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012262734A JP2014110270A (en) 2012-11-30 2012-11-30 Cleaning device
KR1020130133392A KR20140070371A (en) 2012-11-30 2013-11-05 Cleaning apparatus
CN201310601770.7A CN103855059A (en) 2012-11-30 2013-11-25 Cleaning apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012262734A JP2014110270A (en) 2012-11-30 2012-11-30 Cleaning device

Publications (1)

Publication Number Publication Date
JP2014110270A true JP2014110270A (en) 2014-06-12

Family

ID=50862546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012262734A Pending JP2014110270A (en) 2012-11-30 2012-11-30 Cleaning device

Country Status (3)

Country Link
JP (1) JP2014110270A (en)
KR (1) KR20140070371A (en)
CN (1) CN103855059A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2014087761A1 (en) * 2012-12-04 2017-01-05 リソテック ジャパン株式会社 Substrate processing mechanism and small manufacturing apparatus using the same
KR20170120024A (en) 2016-04-20 2017-10-30 가부시기가이샤 디스코 Cleaning apparatus

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105180986B (en) * 2015-09-25 2017-11-28 西安立芯光电科技有限公司 A kind of sample test/processing unit
CN113035743B (en) * 2021-02-25 2022-01-25 无锡亚电智能装备有限公司 Wafer cleaning method for gradually lifting wafer
CN113035744B (en) * 2021-02-25 2021-12-03 无锡亚电智能装备有限公司 Semiconductor wafer cleaning device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02193815A (en) * 1989-01-18 1990-07-31 Shibayama Kikai Kk Method and mechanism for transferring semiconductor wafer
JP2000049135A (en) * 1998-07-27 2000-02-18 Toho Kasei Kk Wafer processing apparatus and method of processing the wafer
JP2000260740A (en) * 1999-03-12 2000-09-22 Disco Abrasive Syst Ltd Spin cleaner
JP2003197718A (en) * 2001-12-26 2003-07-11 Tokyo Electron Ltd Unit and method for treatment substrate
JP2003273055A (en) * 2002-03-13 2003-09-26 Disco Abrasive Syst Ltd Spinner-cleaning unit
JP2010109209A (en) * 2008-10-31 2010-05-13 Disco Abrasive Syst Ltd Grinder

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5669461B2 (en) * 2010-07-01 2015-02-12 株式会社ディスコ Spinner cleaning device
JP5669518B2 (en) * 2010-10-18 2015-02-12 株式会社ディスコ Wafer transfer mechanism
JP2012094659A (en) * 2010-10-26 2012-05-17 Disco Abrasive Syst Ltd Spinner cleaning device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02193815A (en) * 1989-01-18 1990-07-31 Shibayama Kikai Kk Method and mechanism for transferring semiconductor wafer
JP2000049135A (en) * 1998-07-27 2000-02-18 Toho Kasei Kk Wafer processing apparatus and method of processing the wafer
JP2000260740A (en) * 1999-03-12 2000-09-22 Disco Abrasive Syst Ltd Spin cleaner
JP2003197718A (en) * 2001-12-26 2003-07-11 Tokyo Electron Ltd Unit and method for treatment substrate
JP2003273055A (en) * 2002-03-13 2003-09-26 Disco Abrasive Syst Ltd Spinner-cleaning unit
JP2010109209A (en) * 2008-10-31 2010-05-13 Disco Abrasive Syst Ltd Grinder

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2014087761A1 (en) * 2012-12-04 2017-01-05 リソテック ジャパン株式会社 Substrate processing mechanism and small manufacturing apparatus using the same
KR20170120024A (en) 2016-04-20 2017-10-30 가부시기가이샤 디스코 Cleaning apparatus

Also Published As

Publication number Publication date
CN103855059A (en) 2014-06-11
KR20140070371A (en) 2014-06-10

Similar Documents

Publication Publication Date Title
JP5009254B2 (en) Resin coating equipment
CN107887313B (en) Processing device
JP2014110270A (en) Cleaning device
JP5669518B2 (en) Wafer transfer mechanism
JP4502260B2 (en) Spinner cleaning device and dicing device
JP2018086692A (en) Grinder
JP6329813B2 (en) Transfer robot
JP2010056327A (en) Work holding mechanism
JP6162568B2 (en) Grinding apparatus and wafer unloading method
JP2008036744A (en) Polishing device
JP2000260740A (en) Spin cleaner
JP5345457B2 (en) Grinding equipment
TWI824755B (en) A device for carrying and cleaning silicon wafers
KR20210056898A (en) Holding surface cleaning apparatus
JP6037685B2 (en) Grinding equipment
JP2011066198A (en) Grinding processing device
JP7358096B2 (en) Wafer transport mechanism and grinding equipment
JP4824883B2 (en) Substrate polishing apparatus and substrate polishing / cleaning / drying method
JP2009188296A (en) Wafer cleaning device
JP2019093474A (en) Substrate processing system
JP5241317B2 (en) Cleaning device
JP6952579B2 (en) Substrate processing equipment and substrate processing method
JP2003273055A (en) Spinner-cleaning unit
JP2008270425A (en) Conveyor
JP2015037137A (en) Chuck table

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20150428

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151019

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160510

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160708

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20161108